JP2020164927A - Film deposition apparatus - Google Patents

Abstract

To provide a film deposition apparatus capable of inexpensively depositing a dense aluminum nitride film with a uniform thickness with a high production efficiency.SOLUTION: A film deposition apparatus 100 comprises a film deposition processing unit 40, a nitriding processing unit 50, and a transportation unit 30. The transportation unit 30 has a turn table circularly transporting a work 10 and transports the work 10 in such a way that the work 10 is transported to pass through the film deposition processing unit 40 and the nitriding processing unit 50 alternatively. The film deposition processing unit 40 has a target 42 composed of an aluminum material, a plasma generator converting gas introduced between the target 42 and the turn table into plasma, the film deposition apparatus 100 deposits an aluminum film on the work 10. The nitriding processing unit 50 has a process gas introduction unit introducing process gas including nitrogen gas, and a plasma generator converting the process gas into the plasma, and nitrides the aluminum film deposited on the work 10.SELECTED DRAWING: Figure 1

Description

The present invention relates to a film forming apparatus.

In recent years, electronic components in which a substrate having an aluminum nitride film formed on the surface of a ceramic substrate are arranged, and electronic components having an aluminum nitride film formed on the surface of a package have become widespread. Aluminum nitride has high thermal conductivity, low thermal expansion, and good electrical insulation, and the aluminum nitride film formed on the electronic components as described above is mainly used for heat dissipation. Examples of the method for forming the aluminum nitride film include a cofire method (Co-fire method), which is also called a co-fired method, a postfire method (Post-fire method), which is also called a sequential firing method, and reactive sputtering.

The cofire method is a method in which a metallized ceramic substrate precursor is produced by forming a metal paste layer on an unfired ceramic substrate precursor called a green sheet, and the metal paste layer is fired. In this method, the green sheet and the metal paste layer are fired at the same time. The post-fire method is a method in which a metallized ceramic substrate precursor is produced by forming a metal paste layer on a ceramic substrate obtained by firing a green sheet, and the metal paste layer is fired. In this method, the green sheet and the metal paste layer are fired sequentially. In reactive sputtering, a sputter gas containing nitrogen gas is introduced to sputter an aluminum material, and nitrogen ions generated by plasma are reacted with aluminum particles ejected from the aluminum material on a ceramic substrate. An aluminum nitride film is deposited.

Japanese Unexamined Patent Publication No. 2011-181736

The aluminum nitride film applied to the electronic component is required to be dense, to be a thick film such as 20 μm, and to have a uniform film thickness. Forming an aluminum nitride film according to this requirement by the cofire method, the postfire method and the reactive sputtering results in high cost and extremely low production rate. If an attempt is made to reduce the cost, the density of the aluminum nitride film is reduced, and when used in a high temperature environment, damage such as cracks is likely to occur. In particular, reactive sputter has these problems. Further, the cofire method and the postfire method are limited in the dimensional accuracy and size that can form a film.

The present invention has been proposed to solve the above-mentioned problems, and an object of the present invention is to provide a film forming apparatus capable of forming a dense and uniform thick aluminum nitride film at low cost and with high production efficiency. And.

In order to achieve the above object, the film forming apparatus according to the present invention is a film forming apparatus for forming an aluminum nitride film on a work by sputtering, and includes a transport unit having a rotary table for circulating and transporting the work. A film forming processing unit having a target made of an aluminum material and a plasma generator for converting sputter gas introduced between the target and the rotary table into plasma, and forming an aluminum film on the work. A process gas introduction unit for introducing a process gas containing a nitride gas, and a nitriding treatment unit having a plasma generator for converting the process gas into plasma and nitriding the aluminum film formed on the work. The transporting unit is characterized in that the work is conveyed so as to alternately pass through the film forming processing portion and the nitriding processing portion.

According to the present invention, a dense and uniform thick aluminum nitride film can be formed at low cost and with high production efficiency.

It is a perspective plan view which shows typically the structure of the film forming apparatus which concerns on this embodiment. FIG. 1 is a cross-sectional view taken along the line AA in FIG. 1, which is a detailed view of the internal configuration seen from the side surface of the film forming apparatus according to the embodiment of FIG. It is a flowchart of the process by the film forming apparatus which concerns on this embodiment. It is a schematic diagram which shows the processing process of the work by the film forming apparatus which concerns on this embodiment.

An embodiment of the film forming apparatus according to the present invention will be described in detail with reference to the drawings. The film forming apparatus 100 shown in FIG. 1 forms an aluminum nitride film on the work 10. The work 10 is, for example, a packaged electronic component or a ceramic substrate arranged on the electronic component. In the case of a packaged electronic component, an aluminum nitride film is formed on the package surface, and in the case of a ceramic substrate. , An aluminum film is formed on the surface of the ceramic substrate. The film forming apparatus 100 includes a chamber 20, a conveying section 30, a film forming processing section 40, a nitriding process section 50, a load lock section 60, and a control device 70, and alternately repeats film formation of an aluminum film and nitriding of an aluminum film. It grows into an aluminum nitride film having a desired thickness.

The chamber 20 is a cylindrical container whose inside can be evacuated. The inside of the chamber 20 is partitioned by a partition portion 22, and is divided into a plurality of compartments in a fan shape. The film forming processing section 40 is arranged in one of the sections, the nitriding processing section 50 is arranged in the other section, and the load lock section 60 is arranged in the other section. The same number of film forming processing units 40 and nitriding processing units 50 are arranged. For example, the film forming processing unit 40 and the nitriding processing unit 50 are arranged one by one. That is, the work 10 orbits in the chamber 20 many times along the circumferential direction, so that the work 10 alternately circulates through the film forming processing section 40 and the nitriding processing section 50, and the work 10 passes through the aluminum on the work 10. Film formation of the film and nitriding of the aluminum film are alternately repeated to grow an aluminum nitride film having a desired thickness.

If the film formation processing section 40 and the nitriding treatment section 50 can be alternately patrolled, the film formation treatment section 40 and the nitriding treatment section 50 may be arranged in equal numbers of two or more sections. A plurality of film forming processing units 40 may be continuously arranged, and the same number of nitriding processing units 50 as the film forming processing unit 40 may be continuously arranged, or the film forming processing unit 40 and the nitriding processing unit 50 may be arranged as one. A plurality of sections may be arranged alternately.

As shown in FIG. 2, the chamber 20 is formed by being surrounded by a disk-shaped ceiling 20a, a disk-shaped inner bottom surface 20b, and an annular inner peripheral surface 20c. The partition portion 22 is a square wall plate radially arranged from the center of the cylindrical shape, extends from the ceiling 20a toward the inner bottom surface 20b, and does not reach the inner bottom surface 20b. That is, a columnar space is secured on the inner bottom surface 20b side. A rotary table 31 for transporting the work 10 is arranged in this columnar space. The lower end of the partition portion 22 faces the mounting surface of the work 10 on the rotary table 31 with a gap through which the work 10 mounted on the transport portion 30 passes. The partitioning portion 22 partitions the processing space in which the work 10 is processed in the film forming processing section 40 and the nitriding processing section 50. As a result, it is possible to prevent the sputtering gas G1 of the film forming section 40 and the process gas G2 of the nitriding section 50 from diffusing into the chamber 20. Further, as will be described later, plasma is generated in the processing space in the film forming processing unit 40 and the nitriding processing unit 50, but the pressure in the processing space partitioned into a space smaller than the chamber 20 may be adjusted. The pressure can be easily adjusted and the plasma discharge can be stabilized. Therefore, if the above-mentioned effect can be obtained, at least two dividing portions 22 sandwiching the film forming processing portion 40 and two dividing portions 22 sandwiching the nitriding processing portion 50 are sufficient in a plan view. The chamber 20 is provided with an exhaust port 21. An exhaust unit 80 is connected to the exhaust port 21. The exhaust unit 80 includes piping, a pump, a valve and the like (not shown). The inside of the chamber 20 can be depressurized to create a vacuum by exhausting from the exhaust unit 80 through the exhaust port 21.

The transport unit 30 has a rotary table 31, a motor 32, and a holding unit 33, and circulates and transports the work 10 along a transport path L which is a circumferential locus. The rotary table 31 has a disk shape and is greatly expanded so as not to come into contact with the inner peripheral surface 20c. The motor 32 continuously rotates at a predetermined rotation speed about the center of the circle of the rotary table 31 as a rotation axis. The holding portion 33 is a groove, a hole, a protrusion, a jig, a holder, or the like arranged on the upper surface of the rotary table 31 at a circumferentially equal distribution position, and holds the tray 34 on which the work 10 is placed by a mechanical chuck or an adhesive chuck. To do. The works 10 are arranged in a matrix on the tray 34, for example, and six holding portions 33 are arranged on the rotary table 31 at intervals of 60 °.

The film forming processing unit 40 generates plasma and exposes the target 42 made of an aluminum material to the plasma. As a result, the film forming processing unit 40 deposits the aluminum particles knocked out by colliding the ions contained in the plasma with the aluminum material and deposits the film on the work 10. As shown in FIG. 2, the film forming processing unit 40 includes a sputtering source composed of a target 42, a backing plate 43 and an electrode 44, and a plasma generator composed of a power supply unit 46 and a sputtering gas introduction unit 49. ..

The target 42 is a plate-shaped member made of a film-forming material that is deposited on the work 10 to form a film. The film-forming material of this embodiment is an aluminum material, and the target 42 serves as a source of aluminum particles to be deposited on the work 10. That is, the target 42 is made of an aluminum material. The "target composed of an aluminum material" is a sputtering target capable of supplying aluminum particles, and it is permissible to include a target other than aluminum such as an aluminum alloy target. The target 42 is provided at a distance from the transport path L of the work 10 placed on the rotary table 31. The surface of the target 42 is held on the ceiling 20a of the chamber 20 so as to face the work 10 placed on the rotary table 31. For example, three targets 42 are installed. The three targets 42 are provided at positions arranged on the vertices of the triangle in a plan view.

The backing plate 43 is a support member that holds the target 42. The backing plate 43 holds each target 42 individually. The electrode 44 is a conductive member for individually applying electric power to each target 42 from the outside of the chamber 20, and is electrically connected to the target 42. The power applied to each target 42 can be changed individually. In addition, the sputtering source is appropriately provided with a magnet, a cooling mechanism, and the like, if necessary.

The power supply unit 46 is, for example, a DC power supply that applies a high voltage, and is electrically connected to the electrode 44. The power supply unit 46 applies electric power to the target 42 through the electrode 44. The rotary table 31 has the same potential as the grounded chamber 20, and a potential difference is generated by applying a high voltage to the target 42 side. The power supply unit 46 may be an RF power supply for performing high frequency sputtering.

As shown in FIG. 2, the sputter gas introduction unit 49 introduces the sputter gas G1 into the chamber 20. The sputter gas introduction unit 49 includes a supply source of sputter gas G1 such as a cylinder (not shown), a pipe 48, and a gas introduction port 47.

The pipe 48 is connected to the supply source of the sputter gas G1 and airtightly penetrates the chamber 20 to extend into the inside of the chamber 20, and the end portion thereof is opened as a gas introduction port 47.

The gas introduction port 47 opens between the rotary table 31 and the target 42, and introduces the sputter gas G1 for film formation into the processing space 41 formed between the rotary table 31 and the target 42. An inert gas can be adopted as the sputter gas G1, and argon gas or the like is preferable.

In such a film forming processing unit 40, when the sputtering gas G1 is introduced from the sputtering gas introducing unit 49 and the power supply unit 46 applies a high voltage to the target 42 through the electrode 44, it is formed between the rotary table 31 and the target 42. The sputter gas G1 introduced into the processing space 41 is turned into plasma, and active species such as ions are generated. The ions in the plasma collide with the target 42 made of the aluminum material and knock out the aluminum particles. Further, the work 10 circulated and conveyed by the rotary table 31 passes through the processing space 41. The knocked-out aluminum particles are deposited on the work 10 when the work 10 passes through the processing space 41, and a thin aluminum film is formed on the work 10. The work 10 is circulated and conveyed by the rotary table 31, and the film forming process is performed by repeatedly passing through the processing space 41. The film thickness of this aluminum film depends on the amount of nitriding of the nitriding unit 50 within a certain period of time, that is, the nitriding rate, but is preferably about 1 atom, for example.

The nitriding unit 50 generates inductively coupled plasma in the processing space 59 in which the process gas containing nitrogen gas is introduced. That is, the nitriding unit 50 turns nitrogen gas into plasma to generate nitrogen ions. The generated nitrogen ions collide with the aluminum film formed on the work 10 by the film forming processing unit 40 and bond with aluminum to form a nitride film which is a compound film. In this way, the nitriding unit 50 nitrides the aluminum film on the work 10. As shown in FIG. 2, the nitriding unit 50 has a plasma generator composed of a tubular body 51, a window member 52, an antenna 53, an RF power supply 54, a matching box 55, and a process gas introduction unit 58.

As shown in FIGS. 1 and 2, the tubular body 51 is a rectangular cylinder having a rounded horizontal cross section and has an opening. The tubular body 51 is fitted into the ceiling 20a of the chamber 20 so that its opening is separated from the rotary table 31 side, and protrudes into the internal space of the chamber 20. The tubular body 51 is made of the same material as the rotary table 31. The window member 52 is a flat plate of a dielectric material such as quartz having a shape substantially similar to the horizontal cross section of the tubular body 51. The window member 52 is provided so as to close the opening of the tubular body 51, and partitions the processing space 59 in the chamber 20 into which the process gas G2 containing nitrogen gas is introduced and the inside of the tubular body 51. The processing space 59 is a space formed between the rotary table 31 and the inside of the tubular body 51 in the nitriding processing unit 50. The nitride treatment is performed by repeatedly passing the work 10 circulated and conveyed by the rotary table 31 through the processing space 59. The window member 52 may be a dielectric material such as alumina or a semiconductor such as silicon.

The antenna 53 is a conductor wound in a coil shape, is arranged in the internal space of the tubular body 51 separated from the processing space 59 in the chamber 20 by the window member 52, and an electric field is generated by passing an alternating current. To generate. It is desirable that the antenna 53 be arranged in the vicinity of the window member 52 so that the electric field generated from the antenna 53 is efficiently introduced into the processing space 59 via the window member 52. An RF power supply 54 for applying a high frequency voltage is connected to the antenna 53. A matching box 55, which is a matching circuit, is connected in series to the output side of the RF power supply 54. The matching box 55 stabilizes the plasma discharge by matching the impedances on the input side and the output side.

As shown in FIG. 2, the process gas introduction unit 58 introduces the process gas G2 containing nitrogen gas into the processing space 59. The process gas introduction unit 58 has a supply source of process gas G2 such as a cylinder (not shown), a pipe 57, and a gas introduction port 56.

The pipe 57 is connected to the supply source of the process gas G2, airtightly penetrates the chamber 20 and extends into the inside of the chamber 20, and its end is opened as a gas introduction port 56.

The gas introduction port 56 opens in the processing space 59 between the window member 52 and the rotary table 31, and introduces the process gas G2. The process gas G2 is a nitrogen gas or a mixed gas of a nitrogen gas and an inert gas. Argon gas or the like is suitable as the inert gas.

In such a nitriding unit 50, a high frequency voltage is applied from the RF power supply 54 to the antenna 53. As a result, a high-frequency current flows through the antenna 53, and an electric field due to electromagnetic induction is generated. An electric field is generated in the processing space 59 via the window member 52, and inductively coupled plasma of the process gas G2 is generated. At this time, the nitrogen gas is also ionized, and the nitrogen ions collide with the aluminum film on the work 10 and bond with the aluminum. As a result, the aluminum film on the work 10 is nitrided, and an aluminum nitride film is formed as a compound film.

The load lock unit 60 carries the tray 34 on which the unprocessed work 10 is mounted from the outside into the chamber 20 by a transport means (not shown) while maintaining the vacuum of the chamber 20, and mounts the processed work 10 on the tray 34. This is a device for carrying out the tray 34 to the outside of the chamber 20. Since a well-known structure can be applied to the load lock portion 60, the description thereof will be omitted.

The control device 70 controls various elements constituting the film forming apparatus 100, such as an exhaust unit 80, a sputtering gas introduction unit 49, a process gas introduction unit 58, a power supply unit 46, an RF power supply 54, and a transport unit 30. The control device 70 is a processing device including a PLC (Programmable Logic Controller) and a CPU (Central Processing Unit), and stores a program describing the control contents. Specifically, the contents to be controlled include the initial exhaust pressure of the film forming apparatus 100, the electric power applied to the target 42 and the antenna 53, the flow rates of the sputter gas G1 and the process gas G2, the introduction time and the exhaust time, the film forming time, and the motor. The rotation speed of 32 and the like can be mentioned. The control device 70 can support a wide variety of film formation specifications.

Next, the overall operation of the film forming apparatus 100 controlled by the control apparatus 70 will be described. FIG. 3 is a flowchart of processing by the film forming apparatus 100 according to the present embodiment. First, the tray 34 on which the work 10 is mounted is sequentially carried into the chamber 20 from the load lock portion 60 by the transport means (step S01). In step S01, the rotary table 31 sequentially moves the empty holding portion 33 to the loading location from the load lock portion 60. The holding unit 33 individually holds the trays 34 carried in by the conveying means. In this way, all the trays 34 on which the work 10 on which the aluminum nitride film is formed are placed are placed on the rotary table 31.

The inside of the chamber 20 is exhausted from the exhaust port 21 by the exhaust unit 80 and is constantly depressurized. The inside of the chamber 20 is depressurized to a predetermined pressure (step S02). Then, the rotary table 31 on which the work 10 is placed rotates and reaches a predetermined rotation speed (step S03).

When the predetermined rotation speed is reached, the film forming processing section 40 first forms an aluminum film on the work 10 (step S04). That is, the sputter gas introduction unit 49 supplies the sputter gas G1 through the gas introduction port 47. The sputter gas G1 is supplied around the target 42 made of an aluminum material. The power supply unit 46 applies a voltage to the target 42. As a result, the sputtering gas G1 is turned into plasma. The ions generated by the plasma collide with the target 42 and knock out aluminum particles. Aluminum particles are deposited on the surface of the work 10 that passes through the film forming processing unit 40 each time the work 10 is passed, and an aluminum film is formed.

The work 10 that has passed through the film forming processing section 40 by the rotation of the rotary table 31 and has the aluminum film formed is directed to the nitriding processing section 50, and the aluminum film is nitrided by the nitriding section 50 (step S05). That is, the process gas introduction unit 58 supplies the process gas G2 containing nitrogen gas through the gas introduction port 56. The process gas G2 containing nitrogen gas is supplied to the processing space 59 sandwiched between the window member 52 and the rotary table 31. The RF power supply 54 applies a high frequency voltage to the antenna 53. The electric field generated by the antenna 53 through which the high-frequency current flows due to the application of the high-frequency voltage is generated in the processing space 59 via the window member 52, and excites the process gas G2 containing the nitrogen gas supplied to this space. Generate plasma. Further, the nitrogen ions generated by the plasma collide with the aluminum film formed on the work 10 and are combined with the aluminum, and the aluminum film on the work 10 is converted into the aluminum nitride film.

As described above, in steps S04 and S05, the film forming process is performed by the work 10 passing through the processing space 41 of the film forming processing section 40 in operation, and the processing space of the nitriding processing section 50 in operation is performed. The nitriding process is performed when the work 10 passes through 59. Note that "operating" is synonymous with the fact that a plasma generation operation for generating plasma is performed in the processing space of each processing unit.

In the operation of the nitriding unit 50, in other words, the plasma generation operation (introduction of the process gas G2 by the process gas introduction unit 58 and voltage application to the antenna 53 by the RF power supply 54), the first film formation is performed by the film formation process unit 40. It may be started before the broken work 10 reaches the nitriding unit 50. If there is no problem even if the surface of the work 10 before the film formation is subjected to the nitriding treatment, the film formation processing unit 40 operates, in other words, the plasma generation operation of the film formation processing unit 40 (spatter gas by the spatter gas introduction unit 49). The introduction of G1 and the application of voltage to the target 42 by the power supply unit 46) and the plasma generation operation of the nitriding unit 50 may be started at the same time, or the nitriding process may be started before the plasma generation operation of the film forming unit 40 is started. The plasma generation operation of the unit 50 may be started.

The rotary table 31 continues to rotate until a predetermined thickness of aluminum nitride film is formed on the work 10, that is, until a predetermined time obtained in advance by simulation or experiment elapses (steps S06, No). To do. In other words, the work 10 continues to circulate between the film forming process section 40 and the nitriding process section 50 until an aluminum nitride film having a predetermined thickness is formed, and the aluminum particles are deposited on the work 10. The treatment (step S04) and the nitriding treatment (step S05) of nitriding the deposited aluminum particles are alternately repeated.

When the predetermined time has elapsed (step S06, Yes), the operation of the film forming processing unit 40 is first stopped (step S07). Specifically, the introduction of the sputtering gas G1 by the sputtering gas introduction unit 49 is stopped, and the voltage application to the target 42 by the power supply unit 46 is stopped. Next, the operation of the nitriding unit 50 is stopped (step S08). Specifically, the process gas introduction unit 58 stops the introduction of the process gas G2, and the RF power supply 54 stops the supply of high-frequency power to the antenna 53. Then, the rotation of the rotary table 31 is stopped, and the tray 34 on which the work 10 is placed is discharged from the load lock portion 60 (step S09).

In step S07 and step S08, the film forming process section 40 and the nitriding process section 50 are stopped from operation to complete a series of film forming processes of the aluminum nitride film. Each element of the film forming process section 40, the nitriding process section 50, and the transport section 30 so that the film forming process of a series of aluminum nitride films is not completed without performing the nitriding process after the film forming process is performed. Is controlled. In other words, of the film forming process and the nitriding process, each element is controlled so that the nitriding process is performed last and the series of aluminum nitride film forming processes is completed. In the present embodiment, the work 10 that has passed through the film forming section 40 operates the film forming section 40, in other words, before it passes through the nitriding section 50 and reaches the film forming section 40 again. The plasma generation operation in the film processing unit 40 (introduction of sputter gas G1 by sputter gas introduction unit 49 and voltage application to target 42 by power supply unit 46) is stopped.

In this way, in the film forming apparatus 100, the work 10 is alternately conveyed to the film forming processing section 40 and the nitriding processing section 50, and the alternating conveying is repeated a plurality of times. As a result, the film forming process and the nitriding process are alternately performed a plurality of times. As shown in FIG. 4, in the film forming process, the aluminum material is sputtered, and the aluminum thin film 12 on which the knocked out aluminum particles are deposited is formed on the work 10. In the nitriding treatment, nitrogen gas is turned into plasma to generate nitrogen ions, the aluminum thin film 12 formed on the work 10 is exposed to nitrogen ions, and the aluminum thin film 12 is nitrided to form the nitride film 11. .. By alternately performing the film forming process and the nitriding process a plurality of times, the film forming process and the nitriding process are alternately repeated, and the aluminum thin film 12 formed by depositing aluminum particles is nitrided to form a nitride film 11. Is formed, and aluminum particles are further deposited on the nitride film 11, thereby nitriding the newly formed aluminum thin film 12. By this series of aluminum nitride film forming treatments, a nitride film 11 made of aluminum nitride having a predetermined thickness is formed on the work 10.

As described above, the film forming apparatus 100 according to the present embodiment is provided with a film forming processing unit 40, a nitriding processing unit 50, and a conveying unit 30. The film forming processing unit 40 has an aluminum material and a plasma generator that exposes plasma to the aluminum material, and forms an aluminum film on the work 10. The nitriding unit 50 has a gas introduction port 56 of a process gas G2 containing nitrogen gas, and a plasma generator that generates the nitrogen gas plasma and exposes it to an aluminum film, and forms an aluminum film formed on the work 10. Nitriding. The transport section 30 transports the work 10 so as to alternately pass through the film forming process section 40 and the nitriding process section 50. As a result, a dense, thick film and an aluminum nitride film having a uniform film thickness can be formed on the work 10, and the film can be produced according to the film forming speed of the aluminum film, so that the production rate is improved.

Of the film forming process section 40 and the nitriding process section 50, the transfer section 30 finally passes the nitriding section 50 to finish the transfer of the work 10. That is, as the termination process, the film formation processing section 40 is first stopped, and then the nitriding treatment section 50 is stopped. As a result, the film surface on the work 10 can also be made of an aluminum nitride film, so that the thermal conductivity, thermal expansion property, and electrical insulation property of the work 10 are further improved.

Further, the chamber 20 is provided in which the film-forming section 40 and the nitriding section 50 are arranged in separate sections, and the chamber 20 is provided with the same number of film-forming section 40 and the nitriding section 50. As a result, the balance between the film thickness and the nitriding of the aluminum film can be adjusted by adjusting the electric power applied for the film forming process and the nitriding process, so that a high-purity aluminum nitride film can be easily formed.

Further, the transport section 30 has a rotary table 31 on which the work 10 is placed and rotates at a predetermined speed, and the film forming process section 40 and the nitriding process section 50 are on the transport path L on the circumference of the rotary table 31. I was prepared for. As a result, by simply continuing to move the work 10 in one direction, it becomes possible to alternately transfer the film to the film forming processing unit 40 and the nitriding processing unit 50 arranged on the circumferential transport path L of the rotary table 31. The treatment and the nitriding treatment can be alternately repeated. Therefore, it is easy to adjust the balance between the film forming process time and the nitriding process time.

(Other embodiments)
Although the embodiment of the present invention and the modification of each part have been described, the embodiment and the modification of each part are presented as an example, and the scope of the invention is not intended to be limited. These novel embodiments described above can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the invention described in the claims.

For example, in the above-described embodiment, the operation of the film forming processing unit 40 is stopped in step S07, the operation of the nitriding processing unit 50 is stopped in step S08, and the rotation of the rotary table 31 is stopped in step S09. However, the present invention is not limited to this, and the transport unit 30 is such that, of the film forming process unit 40 and the nitriding process unit 50, the operating nitriding process unit 50 is finally passed to stop the transfer of the work 10. , The film forming processing unit 50 and the nitriding processing unit 50 may be controlled. For example, after stopping the rotation of the rotary table 31 so as to pass the nitriding section 50 last and stop the transfer of the work 10, the operation of the film forming section 40 and the operation of the nitriding section 50 are stopped. May be good. Further, for example, since the film forming process is not performed in the film forming process section 50 which is not in operation, the film forming process section is passed through the nitriding process section 50 after the operation of the film forming process section 40 is stopped. The transport of the work 10 may be stopped by passing through 40.

Further, for example, in the above-described embodiment, in order to stop the operation of the film forming processing unit 40, that is, to stop the plasma generation operation, the introduction of the sputtering gas G1 is stopped and the voltage application by the power supply unit 46 is stopped. However, the present invention is not limited to this, and at least one of the operation of introducing the sputtering gas G1 by the sputtering gas introducing unit 49 or applying the voltage by the power supply unit 46 may be stopped. Similarly, in order to stop the plasma generation operation when the operation of the nitriding unit 50 is stopped, at least one of the operation of introducing the process gas G2 or applying the voltage by the RF power supply 54 may be stopped.

10 Work 11 Nitride film 12 Thin film 20 Chamber 20a Ceiling 20b Inner bottom surface 20c Inner peripheral surface 21 Exhaust port 22 Separation part 30 Conveyance part 31 Rotating table 32 Motor 33 Holding part 34 Tray 40 Formation processing part 41 Processing space 42 Target 43 Backing plate 44 Electrode 46 Power supply unit 47 Gas introduction port 48 Piping 49 Spatter gas introduction unit 50 Nitride processing unit 51 Cylindrical body 52 Window member 53 Antenna 54 RF power supply 55 Matching box 56 Gas introduction port 57 Piping 58 Process gas introduction unit 59 Processing space 60 Load lock unit 70 Control device 80 Exhaust unit 100 Film formation device G1 Sputter gas G2 Process gas

Claims (5)

A film forming apparatus that deposits an aluminum nitride film on a work by sputtering.
A transport unit having a rotary table for circulating and transporting the work, and a transport unit.
A film forming processing unit having a target made of an aluminum material and a plasma generator for converting sputter gas introduced between the target and the rotary table into plasma, and forming an aluminum film on the work. ,
A process gas introduction unit for introducing a process gas containing a nitriding gas, and a nitriding treatment unit having a plasma generator for converting the process gas into plasma and nitriding the aluminum film formed on the work.
The transport section transports the work so that the film forming section and the nitriding process section alternately pass through.
A film forming apparatus characterized by. Of the film forming section and the nitriding section, the transport section is the last to pass through the nitriding section to finish the transfer of the work.
The film forming apparatus according to claim 1. A chamber in which the film-forming portion and the nitriding-treated portion are arranged in separate sections is provided.
The chamber is provided with the same number of film forming processing portions and nitriding processing portions.
The film forming apparatus according to claim 1 or 2. The film formation processing unit and the nitriding processing unit are provided on the circumferential transport path of the rotary table.
The film forming apparatus according to any one of claims 1 to 3. The plasma generator of the nitriding unit generates inductively coupled plasma.
The film forming apparatus according to any one of claims 1 to 4.

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