TW201332037A - Bonding method and computer strage medium and bonding system - Google Patents

Abstract

To properly join a substrate to be processed and a support substrate by suitably performing heat treatment of the substrate to be processed and the support substrate. An adhesive is applied onto a wafer to be processed (step A1). Then, in heat treatment of the waver to be processed, the inside of a heat treatment chamber is exhausted, inert gas is supplied to the inside of the heat treatment chamber and the inside of the heat treatment chamber is made to have an oxygen-free atmosphere by being replaced with an inert gas atmosphere (step A2). Then, exhaustion of the inside of the heat treatment chamber and the supply of inert gas to the inside of the heat treatment chamber are stopped, and the surface of the adhesive on the wafer to be processed is heated and dried by using a heating plate (step A3). Then, the inside of the heat treatment chamber is exhausted, the inert gas is supplied to the inside of the heat treatment chamber, and the adhesive on the wafer to be processed is heated to a predetermined temperature by the heating plate (step A4). Then, the wafer to be processed and a support wafer are pressed to be joined via the adhesive (step A13).

Description

Bonding method, computer memory medium and bonding system

The present invention relates to a bonding method for bonding a substrate to be processed and a supporting substrate, a computer memory medium, and a bonding system for performing the bonding method described above.

In recent years, for example, in the manufacturing process of a semiconductor device, the diameter of the semiconductor wafer (hereinafter referred to as "wafer") has been increased to a large extent. Furthermore, in a specific project such as mounting, the wafer is required to be thinned. For example, when a large-diameter and thin wafer is handled as it is or polished, the wafer may be warped or broken. Therefore, for example, in order to reinforce the wafer, a wafer is bonded to a wafer or a glass substrate such as a support substrate.

Such a bonding of the wafer and the supporting substrate, for example, using a bonding apparatus, is performed by interposing an adhesive between the wafer and the supporting substrate. The bonding apparatus includes, for example, a first holding member that holds the wafer, a second holding member that holds the supporting substrate, a heating mechanism that heats an adhesive disposed between the wafer and the supporting substrate, and at least the first holding member or the first The moving mechanism that moves the holding member in the up and down direction. Then, in the bonding apparatus, an adhesive is supplied between the wafer and the support substrate, and after heating the adhesive, the wafer and the support substrate are pressed and bonded (Patent Document 1).

[Previous Technical Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-182016

However, when the bonding apparatus described in Patent Document 1 is used, since the adhesive is heated in an atmosphere containing atmospheric pressure after supplying the adhesive between the wafer and the supporting substrate, the adhesive is oxidized. As a result, the adhesive does not function as a specific function, and the wafer and the support substrate cannot be properly bonded.

Further, since the oxidation is suppressed, it is also conceivable to exhaust the atmosphere in the apparatus, and the exhaust gas may generate a gas flow by itself, and the adhesive may not have a uniform film thickness in the wafer surface. In this case, the wafer and the support substrate cannot be properly bonded.

The present invention has been made in view of such circumstances, and an object thereof is to appropriately perform heat treatment of a substrate to be processed and a support substrate, and to appropriately bond the substrate to be processed and the support substrate.

In order to achieve the above object, the present invention is a bonding method for bonding a substrate to be processed and a supporting substrate, characterized in that it has a coating process in which an adhesive is applied to a substrate to be processed or a supporting substrate, and a heat treatment process is performed. The substrate to be processed or the support substrate coated with the adhesive in the coating process described above is subjected to heat treatment to a specific temperature; and a bonding process, which is then pressed to be heat treated to a specific temperature in the heat treatment process. Bonding the substrate and the support substrate to which the adhesive is not applied, or bonding the support substrate which is heat-treated to a specific temperature in the heat treatment process and the substrate to be processed which is not coated with the adhesive, and the heat treatment is performed work The first process is a state in which a substrate to be processed or a support substrate is housed in a heat treatment chamber provided with a heat treatment plate to seal the inside of the heat treatment chamber, and the substrate to be processed or the support substrate is not in contact with the heat treatment plate. Next, the inside of the heat treatment chamber is an oxygen-free atmosphere; and in the second step, after the airflow is not generated inside the heat treatment chamber, the substrate to be processed or the support substrate is placed on the heat treatment plate, at least The surface of the adhesive on the substrate or support substrate is heat treated to a specific temperature. Further, the anaerobic atmosphere includes an atmosphere in a state of being completely anaerobic, and includes an atmosphere in which some oxygen is present but the influence thereof can be ignored.

In the heat treatment process of the present invention, first, in the first project, the inside of the heat treatment chamber is made into an oxygen-free atmosphere. The anaerobic atmosphere may be, for example, an inert gas atmosphere, even in a vacuum atmosphere. Further, at this time, the substrate to be processed or the support substrate is not in contact with the heat treatment plate, and is not subjected to heat treatment. Therefore, oxidation of the adhesive on the substrate to be processed or the support substrate can be suppressed. After that, in the second project, when the substrate to be processed or the support substrate is placed on the heat-treated plate and heat-treated, no heat is generated inside the heat treatment chamber, so the surface of the adhesive on the substrate to be processed or the support substrate is not It can be scattered, and the adhesive can be formed into a uniform film thickness in the surface of the substrate. As described above, according to the present invention, heat treatment of the substrate to be processed and the support substrate can be appropriately performed. Therefore, the bonding between the substrate to be processed and the support substrate can be appropriately performed.

In the first project, the inside of the heat treatment chamber is evacuated, and an inert gas is supplied to the inside of the heat treatment chamber, and the inside of the heat treatment chamber is replaced with an inert gas atmosphere. In the second project, the second process is stopped. Stopping the supply of the exhaust gas and the inert gas inside the heat treatment chamber, placing the substrate to be processed or the support substrate on the heat treatment plate, and heat-treating the surface of the adhesive on the substrate to be processed or the support substrate to a specific temperature. After the second work, the supply of the exhaust gas and the inert gas inside the heat treatment chamber is performed, and the adhesive placed on the substrate to be processed or the support substrate on the heat treatment plate is heat-treated to a specific temperature.

In this case, in the heat treatment process, the exhaust gas inside the heat treatment chamber may be performed from above the heat treatment plate and at the center portion of the ceiling surface of the heat treatment chamber.

Furthermore, in the first project, the inside of the heat treatment chamber is evacuated to a vacuum atmosphere, and in the second project, the inside of the heat treatment chamber is maintained in a vacuum atmosphere, and the heat treatment plate is placed on the heat treatment plate. The substrate to be processed or the support substrate, and the adhesive on the substrate to be processed or the support substrate is heat-treated to a specific temperature, and after the second process, an inert gas is supplied to the inside of the heat treatment chamber to support the substrate or the substrate to be processed. The substrate may be retracted from the heat treatment plate.

According to another aspect of the present invention, a computer readable memory medium is provided. The computer readable memory medium is stored in a control unit for controlling the bonding system in order to perform the bonding method by a bonding system. The program of action on the computer.

Still another aspect of the invention is a bonding system for bonding a substrate to be processed and a supporting substrate, characterized by comprising: a coating device for applying an adhesive to a substrate to be processed or a supporting substrate; and a heat treatment device having a substrate or a support substrate that is accommodated in the above coating device to which an adhesive is applied a heat treatment chamber to which a heat treatment is applied, and a heat treatment plate to which the substrate to be processed or the support substrate is subjected to heat treatment to a specific temperature; and a bonding device which is pressed and heat-treated to a specific temperature in the heat treatment device Bonding the substrate to be processed and the support substrate to which the adhesive is not applied, or bonding the support substrate to which the heat treatment device is heat-treated to a specific temperature and the substrate to be processed without applying the adhesive; And a control unit that controls the heat treatment device to store the substrate to be processed or the support substrate in the heat treatment chamber to seal the inside of the heat treatment chamber, and in a state where the substrate to be processed or the support substrate is not in contact with the heat treatment plate, a first process in which the inside of the heat treatment chamber is an oxygen-free atmosphere; and then, in a state where airflow is not generated inside the heat treatment chamber, a substrate to be processed or a support substrate is placed on the heat treatment plate, and at least the substrate to be processed or The surface of the adhesive on the support substrate is subjected to a second process of heat treatment to a specific temperature.

The heat treatment apparatus includes an exhaust unit that exhausts the inside of the heat treatment chamber, and an inert gas supply unit that supplies an inert gas to the inside of the heat treatment chamber, and the control unit controls the heat treatment device to be in the first project. The inside of the heat treatment chamber is exhausted by the exhaust portion, and an inert gas is supplied to the inside of the heat treatment chamber by the inert gas supply portion, and the inside of the heat treatment chamber is replaced with an inert gas atmosphere. In the second process, the supply of the exhaust gas and the inert gas inside the heat treatment chamber is stopped, and the substrate to be processed or the support substrate is placed on the heat treatment plate, and the surface of the adhesive on the substrate to be processed or the support substrate is heat-treated to Specific temperature, after the second project mentioned above, the above The supply of the exhaust gas and the inert gas inside the heat treatment chamber is heat-treated to a specific temperature by an adhesive placed on the substrate to be processed or the support substrate on the heat treatment plate.

In this case, the exhaust portion may be disposed above the heat treatment plate and at the center portion of the ceiling surface of the heat treatment chamber.

The heat treatment apparatus includes a pressure reducing unit that decompresses the inside of the heat treatment chamber and an inert gas supply unit that supplies an inert gas to the inside of the heat treatment chamber, and the control unit controls the heat treatment apparatus so that In the first step, the inside of the heat treatment chamber is evacuated to a vacuum atmosphere by the pressure reducing portion, and in the second project, the inside of the heat treatment chamber is maintained in a vacuum atmosphere, and the heat treatment plate is placed on the heat treatment plate. The substrate to be processed or the support substrate, and the adhesive on the substrate to be processed or the support substrate is heat-treated to a specific temperature, and after the second process, the inert gas supply unit supplies an inert gas to the inside of the heat treatment chamber. The substrate to be processed or the support substrate may be retracted from the heat treatment plate.

According to the present invention, heat treatment of the substrate to be processed and the support substrate can be appropriately performed, and bonding between the substrate to be processed and the support substrate can be appropriately performed.

Hereinafter, embodiments of the present invention will be described. Figure 1 is A plan view showing a schematic configuration of the joining system 1 according to the present embodiment. Fig. 2 is a side view showing the outline of the internal structure of the joining system 1.

In the bonding system 1, as shown in FIG. 3, a processed wafer W as a substrate to be processed and a supporting wafer S serving as a supporting substrate are bonded via, for example, an adhesive G. Hereinafter, in the wafer W to be processed, the surface to be bonded to the support wafer S via the adhesive G is referred to as a "joining surface W _J " as a surface, and the surface opposite to the bonding surface W _J is referred to as a surface. It is referred to as the "non-joining surface W _N " on the back side. Similarly, in the support wafer S, the surface joined to the wafer W to be processed via the adhesive G is referred to as a "joining surface S _J " as a surface, and the surface opposite to the bonding surface S _J is called It is used as the "non-joining surface S _N " on the back side. Then, in the bonding system 1, the wafer W to be processed and the supporting wafer S are bonded to form a superposed wafer T as a superposed substrate. Further, the wafer W to be processed is a wafer to be a product, and for example, a plurality of electronic circuits are formed on the bonding surface W _J , and the non-joining surface W _N is polished. Furthermore, the support wafer S has the same diameter as the diameter of the wafer W to be processed, and is a wafer supporting the wafer W to be processed. Further, in the present embodiment, the case where the wafer is used as the supporting substrate will be described, but other substrates such as a glass substrate may be used.

As shown in FIG. 1, the joining system 1 has an integral connection, for example, a cassette that can accommodate a plurality of processed wafers W, a plurality of supporting wafers S, and a plurality of overlapping wafers T, which are carried in and out between the outside and the outside. The loading/unloading station 2 of C _W , C _S , and C _T and the processing station 3 of various processing devices that perform various specific processes on the processed wafer W, the supporting wafer S, and the superposed wafer T.

A cassette mounting table 10 is provided at the loading/unloading station 2. A plurality of, for example, four cassette mounting plates 11 are provided on the cassette mounting table 10. The cassette mounting plates 11 are arranged in a line in the X direction (upward and downward directions in FIG. 1). In the plurality of cassette mounting plate 11, engage in external loading and unloading system of a cassette C _W, C _S, C _T time, the cassette may be placed _{C W, C S, C T} . In this manner, the loading/unloading station 2 is configured to be capable of retaining a plurality of processed wafers W, a plurality of supporting wafers S, and a plurality of superposed wafers T. Further, the number of the cassette mounting plates 11 is not limited to this embodiment, and can be arbitrarily determined. Furthermore, even one of the cassettes can be used as an abnormal wafer for recycling. That is, it is a cassette which can separate the wafer in which the bonding of the processed wafer W and the supporting wafer S is abnormal, and the other normal overlapping wafer T, for various reasons. In the present embodiment, a plurality of the cassette in the C _T C _T as a cassette wafer with exception recovered using the other as the cassette accommodating normal C _T of the superposed wafer by use of T.

The wafer transport unit 20 is provided adjacent to the cassette mounting table 10 at the loading/unloading station 2. The wafer transfer unit 20 is provided with a wafer transfer device 22 that is movable on the transport path 21 extending in the X direction. The wafer transfer device 22 is also movable in the vertical direction and around the vertical axis (θ direction), and can be used for the cassettes C _W , C _S , and C _T on the respective cassette mounting plates 11 and the third of the processing stations 3 described later. The processed wafer W, the supporting wafer S, and the superposed wafer T are transported between the transfer devices 50 and 51 of the processing block G3.

The processing station 3 is provided with a plurality of processing blocks G1, G2, and G3 including various processing devices. For example, the first processing block G1 is provided on the front side of the processing station 3 (the negative side in the X direction of FIG. 1), at the processing station. The second processing block G2 is provided on the back side of the third side (the positive side in the X direction of Fig. 1). In addition, the third processing block G3 is provided on the loading/unloading station 2 side of the processing station 3 (the negative side in the Y direction of the first drawing).

For example, in the first processing block G1, the joining devices 30 to 33 that press the processed wafer W and the supporting wafer S via the adhesive G in the Y direction are arranged in the Y direction from the loading/unloading station 2 side.

For example, as shown in FIG. 2, the second processing block G2 is disposed in the direction toward the loading/unloading station 2 (negative direction in the Y direction in FIG. 1) in accordance with the order in which the wafer W to be processed is applied. The coating device 40 of the agent G and the heat treatment devices 41 to 43 for heating the wafer W to be coated with the adhesive G to a specific temperature, and the same heat treatment devices 44 to 46. The heat treatment apparatuses 41 to 43 and the heat treatment apparatuses 44 to 46 are each provided in three layers from the bottom in this order. Further, the number of devices of the heat treatment apparatuses 41 to 46, or the arrangement of the vertical direction and the horizontal direction can be arbitrarily set.

For example, in the third processing block G3, the processed wafer W, the supporting wafer S, and the transfer devices 50 and 51 of the superposed wafer T are disposed in two layers from the bottom.

As shown in FIG. 1, the wafer transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3. For example, the wafer transfer device 61 is disposed in the wafer transfer region 60. Further, the pressure in the wafer transfer region 60 is equal to or higher than atmospheric pressure, and in the wafer transfer region 60, so-called atmospheric transport of the processed wafer W, the support wafer S, and the superposed wafer T is performed.

The wafer transfer device 61 has, for example, a vertical direction and a horizontal direction (Y Direction, X direction) and the arm that moves freely around the vertical axis. The wafer transfer device 61 moves in the wafer transfer region 60, and can transport the processed wafer W, the support wafer S, and the superposed wafer T to the surrounding first processing block G1 and the second processing block G2. The specific device in the third processing block G3.

Next, the configuration of the above-described joining devices 30 to 33 will be described. The joining device 30 has a processing container 100 capable of sealing the inside as shown in Fig. 4 . On the side of the wafer transfer area 60 side of the processing container 100, the processed wafer W, the supporting wafer S, and the loading/unloading port 101 of the superposed wafer T are formed, and a switch shutter (not shown) is provided at the loading/unloading port. .

The interior of the processing vessel 100 is zoned by the inner wall 102 into a pre-treatment zone D1 and a junction zone D2. The loading/unloading port 101 is formed on the side surface of the processing container 100 in the pretreatment area D1. Further, the inner wall 102 is also formed with a processed wafer W, a supporting wafer S, and a loading/unloading port 103 for the superposed wafer T.

A pre-processing area D1 is provided with a receiving unit 110 for transferring the processed wafer W, the supporting wafer S, and the superposed wafer T between the outside of the bonding apparatus 30. The receiving unit 110 is disposed adjacent to the loading/unloading port 101. Further, the receiving unit 110 may arrange two or more layers in the vertical direction as described later, and may simultaneously receive any two of the processed wafer W, the supporting wafer S, and the superposed wafer T. For example, the wafer W to be processed or the wafer S to be processed may be received by one of the receiving units 110, and the wafer 104 after bonding may be received by the other receiving unit 110. Alternatively, the wafer W to be processed before bonding is received by one receiving unit 110, and the wafer W before the bonding is received by another receiving unit 110. Supporting the wafer S is also possible.

In the negative direction side of the Y direction of the pretreatment region D1, that is, the loading/unloading port 103 side, an inversion portion 111 for reversing, for example, the front and back surfaces of the supporting wafer S is provided vertically above the receiving portion 110. Further, the inversion portion 111 can adjust the orientation of the support wafer S in the horizontal direction as will be described later, and the orientation of the wafer W to be processed in the horizontal direction can be adjusted.

In the positive direction side of the Y direction of the joining region D2, the conveying portion 112 for conveying the processed wafer W, the supporting wafer S, and the superposed wafer T is provided to the receiving portion 110, the inverting portion 111, and the joining portion 113 which will be described later. . The conveyance unit 112 is attached to the loading/unloading port 103.

On the negative side in the Y direction of the bonding region D2, a bonding portion 113 that presses the wafer W to be processed and the supporting wafer S via the adhesive G is provided.

Next, the configuration of the receiving unit 110 will be described. As shown in FIG. 5, the receiving unit 110 has a receiving arm 120 and a wafer support pin 121. The receiving arm 120 can receive the processed wafer W, the supporting wafer S, and the superposed wafer T outside the bonding device 30, that is, between the wafer transfer device 61 and the wafer support pin 121. The wafer support pins 121 are disposed at a plurality of places, for example, three places, and can support the processed wafer W, the support wafer S, and the coincident wafer T.

The receiving arm 120 has a robot arm portion 130 that holds the wafer W to be processed, the supporting wafer S, and the superposed wafer T, and a robot arm driving portion 131 that includes, for example, a motor. The mechanical arm portion 130 has a substantially circular plate shape. The arm driving portion 131 can make the arm portion 130 in the X direction (above and below in FIG. 5) Move to). Further, the arm driving unit 131 is attached to the rail 132 extending in the Y direction (the horizontal direction in FIG. 5), and is configured to be movable on the rail 132. With such a configuration, the receiving arm 120 is movable in the horizontal direction (X direction and Y direction), and the processed wafer W and the supporting crystal are smoothly conveyed between the wafer transfer device 61 and the wafer support pin 121. Round S, coincident wafer T.

As shown in FIGS. 6 and 7 on the robot arm portion 130, the wafer support pins 140 supporting the wafer W to be processed, the support wafer S, and the superposed wafer T are disposed at a plurality of places, for example, four places. Further, the robot arm portion 130 is provided with a guide 141 for positioning the wafer W to be supported, the support wafer S, and the superposed wafer T supported by the wafer support pin 140. The guide 141 is provided at a plurality of places, for example, four, in such a manner as to guide the side of the processed wafer W, the supporting wafer S, and the superposed wafer T.

On the outer circumference of the mechanical arm portion 130, as shown in Figs. 5 and 6, the notch 142 is formed at, for example, four places. The notch 142 can prevent the wafer carrier W from being transferred from the transfer arm of the wafer transfer device 61 to the receiving arm 120 when the wafer W to be processed, the support wafer S, and the overlap wafer T are received. The carrying arm of 61 interferes with the arm portion 130.

Two slits 143 along the X direction are formed in the robot arm portion 130. The slit 143 is formed from the end surface of the robot arm portion 130 on the wafer support pin 121 side to the vicinity of the central portion of the robot arm portion 130. The gap between the robot arm portion 130 and the wafer support pin 121 can be prevented by the slit 143.

Next, the configuration of the above-described inverting device 111 will be described. The inverting portion 111 has a sustain supporting wafer as shown in FIGS. 8 to 10 S. The holding arm 150 of the processed wafer W. The holding arm 150 extends in the horizontal direction (the X direction in FIGS. 8 and 9). Further, the holding arm 150 is provided with a holding member 151 that holds the supporting wafer S and the processed wafer W, for example, at four places. The holding member 151 is configured to move the holding arm 150 in the horizontal direction as shown in Fig. 11 . Further, a notch 152 for holding the support wafer S and the outer peripheral portion of the wafer W to be processed is formed on the side surface of the holding member 151. Then, the holding members 151 can be held by sandwiching the support wafer S and the processed wafer W.

The holding arm 150 is supported by the first driving unit 153 including, for example, a motor, as shown in FIGS. 8 to 10 . By the first driving unit 153, the holding arm 150 is rotatable about the horizontal axis, and is movable in the horizontal direction (the X direction in FIGS. 8 and 9 and the Y direction in FIGS. 8 and 10). Further, even if the first driving unit 153 rotates the holding arm 150 about the vertical axis, the holding arm 150 may be moved in the horizontal direction. A second driving unit 154 including, for example, a motor or the like is provided below the first driving unit 153. By the second driving unit 154, the first driving unit 153 can move in the vertical direction along the support post 155 extending in the vertical direction. As a result, the first driving unit 153 and the second driving unit 154 are held by the supporting wafer S of the holding member 151, and the processed wafer W can be rotated about the horizontal axis and can be moved in the vertical direction and the horizontal direction. .

The support column 155 is supported by the support post 155 via the support plate 161 with the position adjustment mechanism 160 held by the support wafer S of the holding member 151 and adjusting the horizontal direction of the wafer W to be processed. The position adjustment mechanism 160 is disposed adjacent to the retaining arm 150.

The position adjustment mechanism 160 has a detection unit 163 that detects the position of the base 162, the support wafer S, and the groove portion of the wafer W to be processed. Then, in the position adjusting mechanism 160, the support wafer S held by the holding member 151 and the processed wafer W are moved in the horizontal direction, and the detecting unit 163 detects the supporting wafer S and the processed wafer W. The position of the groove portion adjusts the position of the groove portion to adjust the orientation of the support wafer S and the processed wafer W in the horizontal direction.

Further, as shown in FIG. 12, the above-described receiving portion 110 is disposed in two layers in the vertical direction, and the inverting portion 111 is disposed vertically above the receiving portions 110. That is, the receiving arm 120 of the receiving unit 110 is moved in the horizontal direction below the holding arm 150 and the position adjusting mechanism 160 of the reversing unit 111. Further, the wafer support pin 121 of the receiving unit 110 is disposed below the holding arm 150 of the inverting portion 111.

Next, the configuration of the transport unit 112 will be described. The transport unit 112 has a plurality of, for example, two transport arms 170 and 171 as shown in FIG. The first transfer arm 170 and the second transfer arm 171 are arranged in two layers in this order from the bottom in the vertical direction. Further, the first transfer arm 170 and the second transfer arm 171 have different shapes as will be described later.

A mechanical arm driving unit 172 including a motor or the like is provided at a proximal end portion of the transport arms 170 and 171. By the robot arm driving unit 172, each of the transport arms 170 and 171 can be independently moved in the horizontal direction. The transfer arms 170 and 171 and the robot arm drive unit 172 are supported by the base 173.

The conveyance unit 112 is provided in the loading/unloading port 103 formed in the inner wall 102 of the processing container 100 as shown in FIGS. 4 and 14 . then The transport unit 112 is movable in the vertical direction along the loading/unloading port 103 by a driving unit (not shown) including, for example, a motor.

The first transfer arm 170 holds the back surface of the wafer W to be processed, the support wafer S, and the superposed wafer T (the wafer W to be processed and the support wafer S are non-joining surfaces W _N and S _N ). As shown in Fig. 15, the first transfer arm 170 has a mechanical arm portion 180 whose front end is divided into two distal end portions 180a and 180a, and a support portion integrally formed with the mechanical arm portion 180 and supporting the mechanical arm portion 180. 181.

As shown in Fig. 15 and Fig. 16, the robot arm portion 180 is provided with a plurality of resin O-rings 182, for example, four. The O-ring 182 is in contact with the back surface of the processed wafer W, the supporting wafer S, and the coincident wafer T, and the back surface of the O-ring 182 and the processed wafer W, the supporting wafer S, and the coincident wafer T The friction between the O-rings 182 holds the back surface of the wafer W being processed, the wafer S being supported, and the wafer T being superposed. Then, the first transfer arm 170 can horizontally hold the processed wafer W, the support wafer S, and the superposed wafer T on the O-ring 182.

Further, the mechanical arm portion 180 is provided with guiding members 183, 184 which are disposed on the processed wafer W held by the O-ring 182, the supporting wafer S, and the coincident wafer T. On the outside. The first guiding member 183 is provided at the front end of the front end portion 180a of the robot arm portion 180. The second guiding member 184 is formed in an arc shape along the outer circumference of the wafer W to be processed, the supporting wafer S, and the superposed wafer T, and is provided on the side of the support portion 181. By the guide members 183 and 184, the wafer W to be processed, the support wafer S, and the superposed wafer T can be prevented from flying out of the first transfer arm 170, and slipping drop. Further, when the processed wafer W, the supporting wafer S, and the coincident wafer T are held at the appropriate positions on the O-ring 182, the processed wafer W, the supporting wafer S, and the coincident wafer T are not guided. The members 183, 184 are in contact.

The second transfer arm 171 holds, for example, the surface of the support wafer S, that is, the outer peripheral portion of the joint surface S _J and is transported. In other words, the second transfer arm 171 is held by the outer peripheral portion of the joint surface S _J of the support wafer S whose front and back surfaces of the reversing portion 111 are reversed. As shown in Fig. 17, the second transfer arm 171 has a mechanical arm portion 190 whose distal end is divided into two distal end portions 190a and 190a, and a support portion that is integrally formed with the mechanical arm portion 190 and supports the mechanical arm portion 190. 191.

As shown in FIGS. 17 and 18, the robot arm portion 190 is provided with a plurality of second holding members 192, for example, four. The second holding member 192 has a mounting portion 193 on which the outer peripheral portion of the bonding surface S _J of the supporting wafer S is placed, and extends from the mounting portion 193 to the upper side, and the inner side surface is enlarged to a tapered shape from the lower side toward the upper side. Tapered portion 194. The placing portion 193 holds a peripheral portion of, for example, 1 mm or less from the periphery of the supporting wafer S. Further, since the inner surface of the tapered portion 194 is enlarged in a tapered shape from the lower side toward the upper side, the supporting wafer S is transferred from the specific position to the horizontal direction, for example, if the supporting wafer S is transferred from the specific position to the horizontal direction. The circle S is also smoothly positioned to the tapered portion 194 and held by the placing portion 193. Then, the second transfer arm 171 can horizontally hold the support wafer S on the second holding member 192.

Further, as shown in FIG. 19, for example, four notches 201a are formed in the second holding portion 201 of the joint portion 113 to be described later. The support wafer S is transferred from the second transfer arm 171 to the second holding portion by the notch 201a At the time of 201, the second holding member 192 of the second transport arm 171 can be prevented from interfering with the second holding portion 201.

Next, the configuration of the joint portion 113 will be described. As shown in FIG. 20, the joint portion 113 has a first holding portion 200 on which the wafer W to be processed is placed and held thereon, and a second holding portion 201 that adsorbs and holds the supporting wafer S on the lower surface. The first holding unit 200 is disposed below the second holding unit 201 and is disposed to face the second holding unit 201 . In other words, the processed wafer W held by the first holding unit 200 and the supporting wafer S held by the second holding unit 201 are arranged to face each other.

A suction pipe 210 for adsorbing and holding the wafer W to be processed is provided inside the first holding portion 200. The suction pipe 210 is connected to a negative pressure generating device (not shown) such as a vacuum pump. Further, the first holding portion 200 is made of a material having a strength that does not deform even when a load is applied by a pressurizing mechanism 260 to be described later, for example, a ceramic such as tantalum carbide ceramic or aluminum nitride ceramic.

Further, a heating mechanism 211 for heating the wafer W to be processed is provided inside the first holding portion 200. The heating mechanism 211 uses, for example, a heater.

Below the first holding portion 200, a moving mechanism 220 that moves the first holding portion 200 and the wafer W to be processed in the vertical direction and the horizontal direction is provided. The moving mechanism 220 can move the first holding portion 200 three-dimensionally with an accuracy of, for example, ±1 μm. The moving mechanism 220 has a vertical moving portion 221 that moves the first holding portion 200 in the vertical direction, and a horizontal moving portion 222 that moves the first holding portion 200 in the horizontal direction. Each of the vertical moving portion 221 and the horizontal moving portion 222 has, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw.

The horizontal moving portion 222 is provided with a support member 223 that is expandable and contractible in the vertical direction. The support member 223 is provided, for example, at three places on the outer side of the first holding portion 200. Then, as shown in FIG. 21, the support member 223 can support the protruding portion 230 which is provided to protrude from the outer circumferential lower surface of the second holding portion 201 to the lower side.

In the above-described moving mechanism 220, the horizontal direction of the wafer W to be processed on the first holding portion 200 can be positioned, and as shown in FIG. 21, the first holding portion 200 can be raised to form a The bonding space R of the processed wafer W and the supporting wafer S is bonded. The joint space R is a space surrounded by the first holding portion 200, the second holding portion 201, and the protruding portion 230. Further, when the bonding space R is formed, by adjusting the height of the supporting member 223, the distance between the processed wafer W and the supporting wafer S in the bonding space R in the vertical direction can be adjusted.

Further, below the first holding portion 200, a lift pin (not shown) for supporting the wafer W to be processed or the wafer W to be superposed and raised and lowered is provided. The lift pins are inserted into the through holes (not shown) of the first holding portion 200, and are protruded from the upper surface of the first holding portion 200.

Further, the second holding portion 201 is made of, for example, aluminum of an elastic body. Then, when the second holding portion 201 is configured to apply a specific pressure to the entire surface of the second holding portion 201 as described later, for example, 0.7 atmosphere (=0.07 MPa), one of the portions is curved, for example, at the center portion.

On the outer circumference of the second holding portion 201, as shown in Fig. 20, the protruding portion 230 that protrudes from the lower surface of the outer circumference to the lower side is formed. The protruding portion 230 is formed along the outer circumference of the second holding portion 201. And bursting The outlet portion 230 may be formed integrally with the second holding portion 201.

A sealing member 231 for maintaining the airtightness of the joint space R is provided under the protruding portion 230. The sealing material 231 is provided in a ring shape formed in a groove below the protruding portion 230, for example, an O-ring is used. Furthermore, the sealing material 231 has elasticity. Further, the sealing member 231 is not limited to the embodiment as long as it has a sealing function.

A suction pipe 240 for adsorbing and holding the supporting wafer S is provided inside the second holding portion 201. The suction pipe 240 is connected to a negative pressure generating device (not shown) such as a vacuum pump.

Further, an intake pipe 241 having an atmosphere for inhaling the joint space R is provided inside the second holding portion 201. One end of the intake pipe 241 is opened at a position below the second holding portion 201 without holding the support wafer S. Further, the other end of the intake pipe 241 is connected to a negative pressure generating device (not shown) such as a vacuum pump.

Further, a heating mechanism 242 for heating and supporting the wafer S is provided inside the second holding portion 201. The heating mechanism 242 uses, for example, a heater.

A pressurizing mechanism 260 that presses the support member 250 and the second holding portion 201 that support the second holding portion 201 vertically downward is provided on the upper surface of the second holding portion 201. The pressurizing mechanism 260 has a pressure vessel 261 disposed to cover the wafer W to be processed and the support wafer S, and a fluid supply pipe 262 that supplies a fluid such as compressed air to the inside of the pressure vessel 261. Further, the support member 250 is configured to be expandable and contractible in the vertical direction, and is provided, for example, at three places on the outer side of the pressure vessel 261.

The pressure vessel 261 is freely expandable by, for example, in the vertical direction. It is made of stainless steel telescopic tube. The pressure vessel 261 abuts against the upper surface of the second holding portion 201, and the upper surface abuts against the lower surface of the support plate 263 provided above the second holding portion 201. The fluid supply pipe 262 has one end connected to the pressure vessel 261 and the other end connected to a fluid supply source (not shown). Then, the pressure vessel 261 is elongated by supplying the fluid to the pressure vessel 261 from the fluid supply pipe 262. At this time, since the upper surface of the pressure vessel 261 abuts against the lower surface of the support plate 263, the pressure vessel 261 is elongated only in the downward direction, and the second holding portion 201 provided below the pressure vessel 261 can be pressed downward. Further, since the inside of the pressure vessel 261 is pressurized by the fluid, the pressure vessel 261 can uniformly press the second holding portion 201 in the plane. The adjustment of the load when the second holding portion 201 is pressed is performed by adjusting the pressure of the compressed air supplied to the pressure vessel 261. Further, the support plate 263 is preferably constituted by a member having a strength that does not deform even if it receives a reaction force applied to the second holding portion 201 by the pressurizing mechanism 260. Further, even if the support plate 263 of the present embodiment is omitted, the upper surface of the pressure vessel 261 may be brought into contact with the ceiling surface of the processing container 100.

Further, since the configurations of the joining devices 31 to 33 are the same as those of the above-described joining device 30, description thereof will be omitted.

Next, the configuration of the above coating apparatus 40 will be described. The coating device 40 has a processing container 270 capable of sealing the inside as shown in Fig. 22 . A loading/unloading port (not shown) of the processed wafer W is formed on the side surface of the processing container 270 on the wafer transfer region 60 side, and a switch shutter (not shown) is provided at the loading/unloading port.

A rotating chuck 280 that holds the wafer W to be processed and rotates is provided at a central portion of the processing container 270. The spin chuck 280 has a horizontal upper surface on which a suction port (not shown) for sucking the wafer W to be processed is provided. By the suction of the suction port, the wafer W to be processed can be adsorbed and held on the spin chuck 280.

Below the spin chuck 280, a chuck drive unit 281 including a motor or the like is provided. The spin chuck 280 can be rotated by the chuck drive unit 281 at a predetermined speed. Further, the suction cup drive unit 281 is provided with a lifting drive source such as a cylinder, and the rotary suction cup 280 is movable up and down.

A cup 282 for picking up and collecting the liquid scattered or dripped from the wafer W to be processed is provided around the spin chuck 280. A discharge pipe 283 for discharging the recovered liquid and an exhaust pipe 284 for evacuating the atmosphere in the cup 282 are connected to the lower surface of the cup 282.

As shown in Fig. 23, a rail 290 extending in the Y direction (the left-right direction in Fig. 23) is formed on the side of the cup body 282 in the negative direction of the X direction (the lower direction in Fig. 23). The rail 290 is formed, for example, from the outside of the Y direction of the cup body 282 in the negative direction (the left direction in FIG. 23) to the outside in the Y direction positive direction (the right direction in FIG. 23). A robot arm 291 is attached to the rail 290.

As shown in FIGS. 22 and 23, the robot arm 291 supports an adhesive nozzle 293 that supplies, for example, a liquid-like adhesive G to the wafer W to be processed. The robot arm 291 is movable on the rail 290 by the nozzle driving portion 294 shown in Fig. 23. According to this, the adhesive nozzle 293 can be moved from the standby portion 295 provided outside the positive direction side of the cup body 282 in the Y direction to the cup. Above the central portion of the processed wafer W in the body 282, the wafer W can be moved on the processed wafer W in the diameter direction of the processed wafer W. Further, the robot arm 291 is lifted and lowered by the nozzle driving portion 294, and the height of the adhesive nozzle 293 can be adjusted.

As shown in Fig. 22, the subsequent nozzle 293 is connected to a supply pipe 296 for supplying the adhesive G to the adhesive nozzle 293. The supply pipe 296 is in communication with an adhesive supply source 297 that internally stores the adhesive G. Further, the supply pipe 296 is provided with a supply device group 298 including a valve for controlling the flow of the adhesive G, a flow rate adjusting portion, and the like.

Further, even below the spin chuck 280, a back surface flushing nozzle (not shown) that faces the back surface of the wafer W to be processed, that is, the non-joining surface W _{N is} sprayed with the cleaning liquid may be provided. The non-joining surface W _{N of the} processed wafer W and the outer peripheral portion of the processed wafer W are cleaned by the cleaning liquid sprayed from the backside rinsing nozzle.

Next, the configuration of the above-described heat treatment apparatuses 41 to 46 will be described. The heat treatment apparatus 41 has a processing container 300 capable of sealing the inside as shown in Fig. 24 . A loading/unloading port (not shown) of the processed wafer W is formed on the side surface of the processing container 300 on the wafer transfer region 60 side, and a switch shutter (not shown) is provided at the loading/unloading port.

Inside the processing container 300, a heating unit 310 that heats the wafer W to be processed and a temperature adjusting unit 311 that adjusts the temperature of the wafer W to be processed are provided. The heating unit 310 and the temperature adjustment unit 311 are arranged in the Y direction.

The heating unit 310 is provided with a hot plate 320 that accommodates a heat treatment plate. An annular holding member 321 on the outer peripheral portion of the heat retaining plate 320 and a slightly cylindrical support ring 322 surrounding the outer periphery of the holding member 321 are held. The hot plate 320 has a substantially disk shape having a thickness, and can be heated by placing the wafer W to be processed. Further, for example, a heater 323 is housed in the hot plate 320. The heating temperature of the hot plate 320 is controlled by, for example, the control unit 400, and the processed wafer W placed on the hot plate 320 is heated to a specific temperature.

A cover 330 that is movable up and down is provided above the hot plate 320. The lid body 330 is opened below, and is integrated with the hot plate 320, the holding member 321, and the support ring 322 to form a heat treatment chamber K. Then, the heat treatment chamber K is configured to be able to seal the inside thereof.

An inert gas supply pipe 331 serving as an inert gas supply portion for supplying an inert gas such as nitrogen gas to the inside of the heat treatment chamber K is connected to the side surface of the lid body 330. The inert gas supply pipe 331 communicates with an inert gas supply source 332 that stores an inert gas therein. Further, the inert gas supply pipe 331 is provided with a supply device group 333 including a valve for controlling the flow of the inert gas, a flow rate adjusting portion, and the like.

An exhaust portion 334 for discharging the inside of the heat treatment chamber K is provided at a central portion of the ceiling surface of the lid 330 above the hot plate 320. An exhaust pipe 336 that communicates with a negative pressure generating device 335 such as a vacuum pump is connected to the exhaust portion 334. Further, an air brake 337 for regulating the flow of the atmosphere inside the heat treatment chamber K exhausted by the exhaust portion 334 is provided at the end portion of the exhaust portion 334 on the heat treatment chamber K side. The air lock 337 is configured to be openable to the opening of the end portion of the exhaust portion 334 on the side of the heat treatment chamber K.

Three under the hot plate 320 are provided for being supported from below. Wafer W and lifting lift pin 340. The lift pin 340 is movable up and down by the lift drive unit 341. Three through holes 342 that penetrate the hot plate 320 in the thickness direction are formed in the vicinity of the central portion of the hot plate 320. Then, the lift pins 340 are inserted through the through holes 342 and can protrude from the upper surface of the hot plate 320.

The temperature adjustment unit 311 has a temperature adjustment plate 350. The temperature adjustment plate 350 has a substantially square flat plate shape as shown in Fig. 25, and the end surface on the hot plate 320 side is curved in an arc shape. Two slits 351 along the Y direction are formed in the temperature adjustment plate 350. The slit 351 is formed from the end surface on the hot plate 320 side of the temperature adjustment plate 350 to the vicinity of the central portion of the temperature adjustment plate 350. The slit 351 prevents the temperature adjusting plate 350 from interfering with the lift pin 340 of the heating portion 310 and the lift pin 360 of the temperature adjusting portion 311 which will be described later. Further, a temperature adjustment member (not shown) such as a Peltier element is housed in the temperature adjustment plate 350. The cooling temperature of the temperature adjustment plate 350 is controlled by, for example, the control unit 400, and the processed wafer W placed on the temperature adjustment plate 350 is cooled to a specific temperature.

The over-adjustment plate 350 is supported by the support arm 352 as shown in Fig. 24. A drive portion 353 is attached to the support arm 352. The drive unit 353 is attached to the rail 354 that extends in the Y direction. The rail 354 extends from the temperature adjustment portion 311 to the heating portion 310. The temperature adjusting plate 350 is movable between the heating unit 310 and the temperature adjusting unit 311 along the rail 354 by the driving unit 353.

Below the temperature adjustment plate 350, for example, three lift pins 360 for supporting the wafer W to be processed from below and elevating and lowering are provided. Lifting pin 360 series The lifting drive unit 361 can be moved up and down. Then, the lift pins 360 are inserted through the slits 351 and can protrude from the upper surface of the temperature adjustment plate 350.

Further, since the configurations of the heat treatment apparatuses 42 to 46 are the same as those of the above-described heat treatment apparatus 41, description thereof will be omitted.

Further, in the heat treatment apparatuses 41 to 46, the temperature adjustment of the superposed wafer T may be performed. Further, in order to adjust the temperature of the superposed wafer T, a temperature adjustment device (not shown) may be provided. The temperature adjustment device has the same configuration as the above-described heat treatment device 41, and a temperature adjustment plate is used instead of the hot plate 340. A cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature.

The above joint system 1 is provided with a control unit 400 as shown in Fig. 1 . The control unit 400 is, for example, a computer, and has a program storage unit (not shown). A program for controlling the processing of the processed wafer W, the supporting wafer S, and the superposed wafer T in the bonding system 1 is stored in the program storage unit. Further, the program storage unit also stores a program for controlling the bonding system described later in the bonding system 1 by controlling the operation of the drive system such as the various processing devices or the transfer device described above. Further, the program is a computer readable memory medium recorded on, for example, a computer readable hard disk (HD), a floppy disk (FD), a compact disk (CD), a magnetic disk (MO), a memory card, or the like. The H may be attached to the control unit 400 from the memory medium H.

Next, a bonding processing method of the processed wafer W and the supporting wafer S which are performed using the bonding system 1 configured as described above will be described. Fig. 26 is a flow chart showing an example of the main construction of such joining processing.

First, a cassette C _{W in} which a plurality of processed wafers W are accommodated, a cassette C _{S in} which a plurality of supporting wafers S are accommodated, and an empty cassette C _T are placed on the loading/unloading station 2 The cassette is placed on the board 11. Thereafter, the wafer _W to be processed in the cassette C _W is taken out by the wafer transfer device 22 and transported to the transfer device 50 of the third processing block G3 of the processing station 3. At this time, the wafer W to be processed is conveyed while the non-joining surface W _N faces downward.

Next, the processed wafer W is transported to the coating device 40 by the wafer transfer device 61. The processed wafer W carried into the coating device 40 is received from the wafer transfer device 61 and adsorbed and held by the spin chuck 280. At this time, the non-joining surface W _{N of the} wafer W to be processed is adsorbed and held.

Next, the robot nozzle 291 moves the adhesive nozzle 293 of the standby portion 295 above the center portion of the wafer W to be processed. Thereafter, while the wafer W to be processed is rotated by the spin chuck 280, the adhesive G is supplied from the adhesive nozzle 293 to the bonding surface W _{J of the} wafer W to be processed. The supplied adhesive G is diffused to the entire surface of the bonded surface W _J of the processed wafer W by centrifugal force, and the adhesive G is applied to the joint surface W _{J of the} processed wafer W (the work of Fig. 26) A1).

Next, the processed wafer W is transported to the heat treatment apparatus 41 by the wafer transfer device 61. When the processed wafer W is carried into the heat treatment apparatus 41, the superposed wafer T is taken up from the wafer transfer apparatus 61 to the lift pins 360 that stand up in advance and stand by. Next, the lift pins 360 are lowered, and the wafer W to be processed is placed on the temperature adjustment plate 350.

Thereafter, the temperature adjustment plate 350 is moved along the rail 354 to the upper side of the hot plate 320 by the driving portion 353, and the processed wafer W is received in advance. The lift pin 340 that is raised and stands by.

Thereafter, as shown in Fig. 27, the lift pins 340 are raised, and in a state where the processed wafer W is not in contact with the hot plate 320, the heat treatment chamber K in which the lid body 330 is closed and the inside is sealed is formed. Next, the air lock 337 is opened to exhaust the inside of the heat treatment chamber K from the exhaust portion 334, and an inert gas is supplied from the inert gas supply pipe 331 to the inside of the heat treatment chamber K. Then, the inside of the heat treatment chamber K is replaced with an atmosphere of an inert gas to be an oxygen-free atmosphere (Project A2 in Fig. 26). As a result, in the project A2, the oxygen-free atmosphere is maintained in the heat treatment chamber K, and thereafter, even if the wafer W to be processed is heated, the oxidation of the adhesive G on the wafer W to be processed can be suppressed. Further, in addition to the atmosphere in a state of complete anaerobic state, the anaerobic atmosphere also includes an atmosphere in which some oxygen is present but the influence thereof can be ignored.

Thereafter, as shown in Fig. 28, the lift pins 340 are lowered, and the processed wafer W is placed on the hot plate 320. At this time, the air brake 337 is closed to stop the exhaust gas from the inside of the heat treatment chamber K of the exhaust portion 334, and the supply of the inert gas to the inside of the heat treatment chamber K from the inert gas supply pipe 331 is stopped. Then, when a certain time elapses, the surface of the adhesive G on the processed wafer W is heated by the hot plate 320 heated to a specific temperature, for example, 100 ° C to 300 ° C, to become dry hardened (the work of Fig. 26) A3). As a result, in the work A3, since the supply of the exhaust gas and the inert gas inside the heat treatment chamber K is stopped, the gas flow is not generated inside the heat treatment chamber K, and the surface of the adhesive agent G is not disturbed. Therefore, the adhesive G on the wafer W to be processed can form a uniform film thickness in the wafer surface.

When the surface G of the adhesive G on the processed wafer W is dried, such as As shown in Fig. 29, when the air lock 337 is opened and the inside of the heat treatment chamber K is discharged from the exhaust portion 334, an inert gas is supplied from the inert gas supply pipe 331 to the inside of the heat treatment chamber K. Then, the inside of the heat treatment chamber K is discharged from the adhesive G to the solvent of the volatilized adhesive G, and is replaced with an inert gas atmosphere. Further, at this time, the processed wafer W on the hot plate 320 is heated to a specific temperature, for example, 100 ° C to 300 ° C. Then, when a specific time elapses, the adhesive G on the wafer W to be processed is heated to the inside thereof, and the solvent of the adhesive G is volatilized and the adhesive G is hardened (the work A4 of Fig. 26). As a result, in the work A4, although the inside of the heat treatment chamber K is supplied with the exhaust gas and the inert gas, an air flow is generated inside the heat treatment chamber K, but the surface of the adhesive G is hardened in the work A3, so the surface Without confusing, the film thickness of the adhesive G can be kept uniform in the wafer surface.

Thereafter, the lift pin 340 is raised, and the temperature adjustment plate 350 is moved above the hot plate 320. Next, the processed wafer W is taken up from the lift pins 340 to the temperature adjustment plate 350, and the temperature adjustment plate 350 is moved to the wafer transfer region 60 side. During the movement of the temperature adjustment plate 350, the processed wafer W is temperature-adjusted to a specific temperature.

The processed wafer W heat-treated in the heat treatment apparatus 41 is transported to the bonding apparatus 30 by the wafer transfer apparatus 61. The processed wafer W conveyed to the bonding apparatus 30 is received from the wafer transfer device 61 to the receiving arm 120 of the receiving unit 110, and is received from the receiving arm 120 to the wafer supporting pin 121. Thereafter, the processed wafer W is transported from the wafer support pin 121 to the inverting portion 111 by the first transfer arm 170 of the transport unit 112.

The processed wafer W transported to the inversion portion 111 is held in the hold The member 151 is moved to the position adjustment mechanism 160. Then, in the position adjusting mechanism 160, the position of the groove portion of the processed wafer W is adjusted so that the orientation of the horizontal direction of the processed wafer W is adjusted (the construction A5 of Fig. 26).

Thereafter, the processed wafer W is transported from the reversing unit 111 to the joint portion 113 by the first transfer arm 170 of the transport unit 112. The processed wafer W conveyed to the bonding portion 113 is placed on the first holding portion 200 (Project A6 in Fig. 26). In the first holding portion 200, the processed wafer W is downloaded in a state where the bonding surface W _{J of} the wafer W to be processed faces upward and the adhesive G faces upward.

While the processed wafer W is being processed by the above-described processes A1 to A6, the processed wafer W is then subjected to processing for supporting the wafer S. The support wafer S is transported to the bonding device 30 by the wafer transfer device 61. Further, since the process of transporting the support wafer S to the bonding apparatus 30 is the same as that of the above embodiment, the description thereof is omitted.

The support wafer S conveyed to the bonding apparatus 30 is received from the wafer transfer device 61 to the receiving arm 120 of the receiving unit 110, and is received from the receiving arm 120 to the wafer supporting arm 121. Thereafter, the support wafer S is transported from the wafer support arm 121 to the inverting portion 111 by the first transfer arm 170 of the transport unit 112.

The support wafer S conveyed to the inverting portion 111 is held by the holding member 151 and moved to the position adjusting mechanism 160. Then, in the position adjusting mechanism 160, the position of the groove portion supporting the wafer S is adjusted so that the orientation of the horizontal direction of the supported wafer S is adjusted (the work A7 of Fig. 26). The support wafer S whose orientation in the horizontal direction is adjusted is moved from the position adjustment mechanism 160 to the horizontal direction, and after moving to the upper side in the vertical direction, the front and back surfaces thereof are reversed (the construction A8 of Fig. 26). That is, the bonding surface S _J supporting the wafer S faces upward.

After that, the support wafer S moves to the lower side in the vertical direction, and then the second transfer arm 171 of the transport unit 112 is transported from the reversing unit 111 to the joint portion 113. At this time, since the second transfer arm 171 holds only the outer peripheral portion of the joint surface S _J of the support wafer S, there is no possibility that the joint surface S _J is contaminated by adhering to particles such as the second transfer arm 171. . The support wafer S conveyed to the joint portion 113 is adsorbed and held by the second holding portion 201 (Project A9 of Fig. 26). In the second holding portion 201, the supporting wafer S is held while the bonding surface S _J of the supporting wafer S faces downward.

In the bonding apparatus 30, when the processed wafer W and the supporting wafer S are held by the first holding unit 200 and the second holding unit 201, the processed wafer W and the supporting wafer S face each other. The position of the first holding portion 200 in the horizontal direction is adjusted by the moving mechanism 220 (the work A10 of Fig. 26). Further, at this time, the pressure between the second holding portion 201 and the supporting wafer S is, for example, 0.1 air pressure (=0.01 MPa). Further, the pressure applied to the upper surface of the second holding portion 201 is 1.0 atm (0.1 MPa) of atmospheric pressure. Since the atmospheric pressure applied to the upper surface of the second holding portion 201 is maintained, even if the pressure of the pressure vessel 261 of the pressurizing mechanism 260 is at atmospheric pressure, a gap is formed between the upper surface of the second holding portion 201 and the pressure vessel 261. Also.

Next, as shown in FIG. 30, the first unit is moved by the moving mechanism 220. The holding portion 200 is raised, and the support member 223 is extended, and the second holding portion 201 is supported by the support member 223. At this time, by adjusting the height of the support member 223, the distance between the processed wafer W and the supporting wafer S in the vertical direction is adjusted to a specific distance (Project A11 of Fig. 26). Further, the specific distance-based sealing material 231 is in contact with the first holding portion 200, and when the second holding portion 201 and the center portion of the supporting wafer S are bent as will be described later, the center portion of the wafer S and the processed crystal are supported. The height of the circle W contact. In this manner, the joint space R sealed between the first holding portion 200 and the second holding portion 201 is formed.

Thereafter, the atmosphere of the joint space R is sucked from the intake pipe 241. Then, when the pressure in the joint space R is, for example, reduced to 0.3 air pressure (=0.03 MPa), the pressure applied to the upper surface of the second holding portion 201 and the pressure in the joint space R are applied to the second holding portion 201. The difference is 0.7 air pressure (=0.07 MPa). As a result, as shown in FIG. 31, the center portion of the second holding portion 201 is curved, and the center portion of the support wafer S held by the second holding portion 201 is also bent. Further, even if the pressure in the joint space R is reduced to 0.3 atm (=0.03 MPa), the pressure between the second holding portion 201 and the supporting wafer S is 0.1 atm (=0.01 MPa), so that the supporting wafer is maintained. S is held in the state of the second holding unit 201.

Thereafter, the atmosphere of the air joining space R is sucked and decompressed into the space R. Then, when the pressure in the joint space R is 0.1 or less (=0.01 MPa) or less, the second holding portion 201 cannot hold the supporting wafer S, and as shown in Fig. 32, the supporting wafer S falls to the lower side and supports The bonding surface S _{J of the} wafer S is completely in contact with the bonding surface W _{J of the} wafer W to be processed. At this time, the support wafer S is sequentially abutted from the center portion abutting on the wafer W to be processed toward the radially outer side. That is, even when there is air as a void in the joint space R, for example, air is often present outside the place where the support wafer S abuts on the wafer W to be processed, so that the air can be made from the wafer to be processed. The discharge between W and the supporting wafer S. In this manner, while the generation of the voids is suppressed, the wafer W to be processed and the supporting wafer S are subsequently carried by the adhesive G (Project A12 of Fig. 26).

Thereafter, as shown in Fig. 33, the height of the support member 223 is adjusted, and the lower surface of the second holding portion 201 is brought into contact with the non-joining surface _{SN of the} support wafer S. At this time, the sealing material 231 is elastically deformed, and the first holding portion 200 and the second holding portion 201 are in close contact with each other. Then, while the processed wafer W and the supporting wafer S are heated by the heating means 211, 242 at a specific temperature, for example, 200 ° C, the second holding portion 201 is pressed to the lower side by the pressing mechanism 260 at a specific pressure, for example, 0.5 MPa. . As a result, the processed wafer W and the supporting wafer S are strongly bonded and joined (working A13 of Fig. 26).

The superposed wafer T to which the processed wafer W and the support wafer S are bonded is transported from the joint portion 110 to the receiving portion 110 by the first transfer arm 170 of the transport portion 112. The superposed wafer T conveyed to the receiving unit 110 is taken up to the receiving arm 120 via the wafer supporting arm 121, and is taken from the receiving arm 120 to the wafer transfer device 61.

Next, the superposed wafer T is transported to the heat treatment apparatus 42 by the wafer transfer device 61. Then, in the heat treatment device 42, the coincident wafer T is temperature-adjusted to a specific temperature such as normal temperature (23 ° C). Thereafter, the superposed wafer T is transported to the transfer device 51 by the wafer transfer device 61, and then transported to the cassette of the specific cassette mounting plate 11 by the wafer transfer device 22 of the loading/unloading station 2 C _T . In this way, a series of bonding processes of the processed wafer W and the supporting wafer S are completed.

According to the above embodiment, in the project A2, the inside of the heat treatment chamber K is made into an oxygen-free atmosphere. Further, at this time, the wafer W to be processed is not in contact with the hot plate 320, and is not subjected to heat treatment. Therefore, the oxidation of the adhesive G on the wafer W to be processed can be suppressed. After that, in the process A3, when the wafer W to be processed is placed on the hot plate 320 and the surface of the adhesive G is dried and hardened, the supply of the exhaust gas and the inert gas inside the heat treatment chamber K is stopped. The inside of the heat treatment chamber K generates a gas flow, so that the surface of the adhesive G is not disturbed. Further, in the subsequent work A4, even if the supply of the exhaust gas and the inert gas inside the heat treatment chamber K is performed, an air flow is generated inside the heat treatment chamber K, and the surface of the adhesive G is not hardened, so that There is confusion. Therefore, the adhesive G on the wafer W to be processed can form a uniform film thickness in the wafer surface. As described above, according to the present embodiment, the heat treatment of the wafer W to be processed can be appropriately performed. Therefore, the bonding of the processed wafer W and the supporting wafer S can be performed more appropriately.

In the above embodiment, the inside of the heat treatment chamber K is changed to an inert gas atmosphere to form an oxygen-free atmosphere. However, even if the inside of the heat treatment chamber K is a vacuum atmosphere, it may be an oxygen-free atmosphere.

At this time, the heat treatment apparatus 41 is provided with a lid body 500 that is movable up and down as shown in Fig. 34 instead of the above-described lid body 330. The cover 500 is open under the cover and is integrated with the hot plate 320, the holding member 321 and the support ring 322. The heat treatment chamber K is formed. Then, the heat treatment chamber K is configured to be able to seal the inside thereof.

An inert gas supply pipe 510 serving as an inert gas supply portion for supplying an inert gas such as nitrogen gas to the inside of the heat treatment chamber K is connected to one side surface of the lid body 500. The inert gas supply pipe 510 is in communication with an inert gas supply source 511 that stores an inert gas therein. Further, the inert gas supply pipe 511 is provided with a supply device group 512 including a valve for controlling the flow of the inert gas, a flow rate adjusting portion, and the like.

On the other side surface of the lid body 500, an intake pipe 520 serving as a pressure reducing portion for decompressing the inside of the heat treatment chamber K is provided. The intake pipe 520 is in communication with a negative pressure generating device 521 such as a vacuum pump.

Further, since the other configuration of the heat treatment apparatus 41 is the same as that of the heat treatment apparatus 41 of the above-described embodiment, the description thereof will be omitted. Further, the configurations of the heat treatment apparatuses 42 to 46 are also the same as those of the heat treatment apparatus 41.

Then, in the project A1, after the adhesive G is applied onto the wafer W to be processed, the processed wafer W is transported to the heat treatment apparatus 41. The wafer W to be processed that has been carried into the heat treatment apparatus 41 is taken up to the lift pin 340 that has been raised in advance by the temperature adjustment plate 350. Thereafter, as shown in FIG. 35, in a state where the wafer W to be processed is not in contact with the hot plate 320, the heat treatment chamber K in which the lid 330 is closed and the inside is sealed is formed. Next, the inside of the heat treatment chamber K is evacuated from the intake pipe 520 to be depressurized. Then, the inside of the heat treatment chamber K is set to a vacuum atmosphere, that is, an oxygen-free atmosphere (Engineering A2). As a result, in the project A2, since the oxygen-free atmosphere is maintained in the heat treatment chamber K, even if the wafer W to be processed is heated, the oxidation of the adhesive G on the wafer W to be processed can be suppressed.

Further, in the project A2, since the inside of the heat treatment chamber K is depressurized to a vacuum atmosphere, the bubbles contained in the adhesive G on the wafer W to be processed flow out to the outside of the adhesive G and are removed. Therefore, the void between the bonded wafer W to be processed and the supporting wafer S can be suppressed.

Thereafter, as shown in Fig. 36, the lift pins 340 are lowered, and the processed wafer W is placed on the hot plate 320. At this time, the evacuation from the intake pipe 520 is continued, and the inside of the heat treatment chamber K is maintained in a vacuum atmosphere. That is, no airflow is generated inside the heat treatment chamber K. Then, the processed wafer W on the hot plate 320 is heated to a specific temperature, for example, 100 ° C to 300 ° C. When a certain period of time elapses, the adhesive G on the wafer W to be processed is heated to the inside thereof, and the solvent of the adhesive G is volatilized and the adhesive G is hardened (engineering A3 and engineering A4). As a result, in Project A3 and Project A4, since no gas flow is generated inside the heat treatment chamber K, the adhesive G on the processed wafer W is not disturbed, and the adhesive G can be formed in the wafer surface. Uniform film thickness.

Thereafter, the rising pin 340 rises and the processed wafer W is retracted from the hot plate 320. At this time, the evacuation from the intake pipe 520 is stopped, and the inert gas is supplied from the inert gas supply pipe 510 to the inside of the heat treatment chamber K. Then, the inside of the heat treatment chamber K is returned to the normal pressure. At this time, the wafer W to be processed may be adjusted to a normal temperature by the supplied inert gas. Further, the subsequent items A5 to A13 are the same as the items A5 to A13 in the above embodiment, and thus the description thereof is omitted.

As described above, according to the present embodiment, oxidation of the adhesive G can be suppressed in the process A2, and the processed wafer W and the supporting wafer S can be suppressed. Between the pores, and in Project A3 and Project A4, the adhesive G on the wafer W to be processed forms a uniform film thickness in the wafer surface. Therefore, the bonding of the processed wafer W and the supporting wafer S can be performed more appropriately.

In the above embodiment, the processed wafer W and the supporting wafer S are joined while the wafer W to be processed is disposed on the lower side and the supporting wafer S is disposed on the upper side, but even if The processing of the wafer W and the supporting wafer S may be reversed. At this time, the above-described processes A1 to A6 are performed on the supporting wafer S, and the adhesive G is applied to the bonding surface S _{J of} the supporting wafer S. Further, the above-described processes A7 to A9 are performed on the wafer W to be processed, and the front and back surfaces of the wafer W to be processed are reversed. Then, the above-described processes A10 to A13 are performed to bond the support wafer S and the wafer W to be processed. However, from the viewpoint of protecting an electronic circuit or the like on the wafer W to be processed, it is preferable to apply the adhesive G on the wafer W to be processed.

Furthermore, in the above embodiment, the coating device 40 applies the adhesive G to either the processed wafer W and the supporting wafer S, but even the processed wafer W and the supporting wafer S Both of them may be coated with the adhesive G.

In the above embodiment, the processed wafer W is heated to a specific temperature of 100 ° C to 300 ° C in the process A5, but the heat treatment of the processed wafer W may be performed in two stages. For example, in the heat treatment apparatus 41, after heating to the first heat treatment temperature, for example, 100 ° C to 150 ° C, the heat treatment apparatus 44 is heated to a second heat treatment temperature, for example, 150 ° C to 300 ° C. At this time, the temperature of the heating mechanism itself in the heat treatment device 41 and the heat treatment device 44 can be made constant. Therefore, there is no need to carry out the heating machine The temperature adjustment of the structure can further increase the throughput of the bonding process of the processed wafer W and the supporting wafer S.

Further, when the heat treatment of the wafer to be processed is performed in two stages, even if both the heat treatment apparatus 41 that performs the first heat treatment and the heat treatment apparatus 44 that performs the second heat treatment apply to the present invention, even if only the first The heat treatment device 44 for the secondary heat treatment may be applied to the present invention. That is, since the heat treatment temperature of the second heat treatment is higher than that of the first heat treatment, the adhesive G on the wafer W to be processed in the second heat treatment apparatus 44 is easily oxidized. In order to suppress this oxidation, the second heat treatment apparatus 44 is preferably applied to the present invention.

Although the preferred embodiment of the present invention has been described above with reference to the attached drawings, the present invention is not limited to such an example. It is a matter of course that the present invention is within the technical scope of the present invention, and it is to be understood that the modifications and the modifications may be made by those skilled in the art. The present invention is not limited to this example, and various aspects can be employed. The present invention is also applicable to a case where the substrate to be processed is an FPD (flat display) other than a wafer, or another substrate such as a grating for a photomask. Furthermore, the present invention is also applicable to a case where the support substrate is another substrate such as a glass substrate other than the wafer.

1‧‧‧ joint system

30~33‧‧‧Joining device

40‧‧‧ Coating device

41~46‧‧‧ Heat treatment unit

320‧‧‧Hot board

330‧‧‧ cover

331‧‧‧Inert gas supply pipe

334‧‧‧Exhaust Department

337‧‧‧ air lock

400‧‧‧Control Department

500‧‧‧ cover

510‧‧‧Inert gas supply pipe

520‧‧‧ suction pipe

K‧‧‧heat treatment room

G‧‧‧Binder

S‧‧‧Support wafer

T‧‧‧ coincident wafer

W‧‧‧Processed Wafer

Fig. 1 is a plan view showing the outline of a configuration of a joining system according to the present embodiment.

Fig. 2 is a view showing the internal structure of the joint system according to the embodiment; A rough side view.

Figure 3 is a side view of the wafer being processed and the wafer being supported.

Fig. 4 is a schematic cross-sectional view showing the configuration of the joining device.

Fig. 5 is a plan view showing the outline of the configuration of the receiving unit.

Fig. 6 is a plan view showing the outline of the configuration of the receiving arm.

Fig. 7 is a side view showing the outline of the configuration of the receiving arm.

Fig. 8 is a plan view showing the outline of the configuration of the inverting portion.

Fig. 9 is a side view showing the outline of the configuration of the inverting portion.

Fig. 10 is a side view showing the outline of the configuration of the inverting portion.

Fig. 11 is a side view showing the outline of the configuration of the holding arm and the holding member.

Fig. 12 is an explanatory view showing the positional relationship between the receiving portion and the inverting portion.

Fig. 13 is a side view showing the outline of the configuration of the transport unit.

Fig. 14 is an explanatory view showing a state in which a conveying portion is disposed in a joining device.

Fig. 15 is a plan view showing the outline of the configuration of the first transfer arm.

Fig. 16 is a side view showing the outline of the configuration of the first transfer arm.

Fig. 17 is a plan view showing the outline of the configuration of the second transfer arm.

Fig. 18 is a side view showing the outline of the configuration of the second transfer arm.

Fig. 19 is an explanatory view showing a state in which a notch is formed in the second holding portion.

Fig. 20 is a longitudinal cross-sectional view showing the outline of a joint portion.

Fig. 21 is a longitudinal cross-sectional view showing the outline of a joint portion.

Fig. 22 is a longitudinal sectional view showing the outline of a configuration of a coating device.

Fig. 23 is a schematic cross-sectional view showing the configuration of a coating apparatus.

Fig. 24 is a longitudinal sectional view showing the outline of a configuration of a heat treatment apparatus.

Fig. 25 is a schematic cross-sectional view showing the configuration of a heat treatment apparatus.

Fig. 26 is a flow chart showing the main construction of the joining process.

Fig. 27 is an explanatory view showing a state in which the inside of the heat treatment chamber is replaced with an inert gas atmosphere.

Fig. 28 is an explanatory view showing a state in which the surface of the adhesive on the wafer to be processed is dried.

Fig. 29 is an explanatory view showing a state in which an adhesive on a wafer to be processed is heated to a specific temperature.

Fig. 30 is an explanatory view showing a state in which the first holding portion is raised.

Fig. 31 is an explanatory view showing a state in which the center portion of the second holding portion is curved.

Fig. 32 is an explanatory view showing a state in which the joint surface of the support wafer is completely in contact with the joint surface of the wafer to be processed.

Fig. 33 is an explanatory view showing a state in which the wafer to be processed and the supporting wafer are bonded.

Fig. 34 is a longitudinal sectional view showing the outline of a configuration of a heat treatment apparatus according to another embodiment.

Fig. 35 is an explanatory view showing a state in which the inside of the heat treatment chamber is made into a vacuum atmosphere.

Fig. 36 is an explanatory view showing a state in which an adhesive on a wafer to be processed is heated to a specific temperature.

Figure 37 is a diagram showing the inside of the heat treatment chamber as a normal pressure atmosphere. An explanatory diagram of the child.

Claims (9)

A bonding method, which is a bonding method for bonding a substrate to be processed and a supporting substrate, characterized by having a coating process of applying an adhesive to a substrate to be processed or a supporting substrate; and heat treating the substrate, after which the coating is applied The cloth project is heat-treated to a specific temperature by the substrate or the support substrate coated with the adhesive; and the bonding process, which is followed by pressing the substrate to be processed which is heat-treated to a specific temperature in the heat treatment process and is not Bonding the support substrate to which the adhesive is applied, or bonding the support substrate to which the heat treatment is applied to a specific temperature in the heat treatment process, and the substrate to be processed which is not coated with the adhesive, and the heat treatment process has the following: In the first step, the substrate to be processed or the support substrate is housed in a heat treatment chamber provided with a heat treatment plate to seal the inside of the heat treatment chamber, and the substrate to be processed or the support substrate is not in contact with the heat treatment plate. The inside of the heat treatment chamber becomes an oxygen-free atmosphere; and the second project, after which the system does not generate inside the heat treatment chamber Flow state, the surface of the adhesive to be applied to a specific heat treatment temperature in the heat treatment of the substrate to be processed or placing the substrate support, the substrate to be processed or at least the support substrate. The joining method according to the first aspect of the invention, wherein in the first aspect, the inside of the heat treatment chamber is exhausted, and an inert gas is supplied to the inside of the heat treatment chamber, and the heat is supplied The inside of the chamber is replaced with an inert gas atmosphere. In the second step, the supply of the exhaust gas and the inert gas inside the heat treatment chamber is stopped, and the substrate to be processed or the support substrate is placed on the heat treatment plate, and the substrate to be processed or the substrate to be processed is placed. The surface of the adhesive on the support substrate is subjected to heat treatment to a specific temperature, and after the second process, the exhaust of the inside of the heat treatment chamber and the supply of the inert gas are performed, and the substrate to be processed placed on the heat treatment plate or The adhesive on the support substrate is subjected to heat treatment to a specific temperature. The joining method according to the second aspect of the invention, wherein in the heat treatment, the exhaust of the inside of the heat treatment chamber is performed from above the heat treatment plate and at a central portion of a ceiling surface of the heat treatment chamber. The joining method according to claim 1, wherein in the first project, the inside of the heat treatment chamber is evacuated to a vacuum atmosphere, and in the second project, the inside of the heat treatment chamber is maintained in a vacuum atmosphere. In the state where the substrate to be processed or the support substrate is placed on the heat treatment plate, the adhesive on the substrate to be processed or the support substrate is subjected to heat treatment to a specific temperature, and after the second process, the inside of the heat treatment chamber is supplied. The inert gas is such that the substrate to be processed or the support substrate is retracted from the heat treatment plate. A computer readable memory medium characterized in that, by means of a bonding system, a bonding method as described in claim 1 is stored on a computer that controls a control unit of the bonding system The program of the action. A bonding system belonging to a bonding system for bonding a substrate to be processed and a supporting substrate, comprising: a coating device for applying an adhesive to a substrate to be processed or a supporting substrate; and a heat treatment device having the coating for the coating a heat treatment chamber to which a device is coated with a substrate to be processed or a support substrate, and a heat treatment plate to which the substrate to be processed or the support substrate is placed and heat-treated to a specific temperature; and a bonding device that pushes In the above heat treatment apparatus, the substrate to be processed which is heat-treated to a specific temperature and the support substrate not coated with the adhesive are bonded, or the support substrate which is subjected to heat treatment to a specific temperature in the heat treatment apparatus is pressed and And a control unit that controls the heat treatment device to store the substrate to be processed or the support substrate in the heat treatment chamber to seal the inside of the heat treatment chamber, to be processed on the substrate to be processed or The inside of the heat treatment chamber is made into an oxygen-free atmosphere in a state where the support substrate is not in contact with the heat treatment plate. In the first step, and after the airflow is generated in the heat treatment chamber, the substrate to be processed or the support substrate is placed on the heat treatment plate, and at least the surface of the substrate on the substrate to be processed or the support substrate is subjected to heat treatment. The second project to a specific temperature. The joining system according to claim 6, wherein the heat treatment device includes exhausting the inside of the heat treatment chamber And an exhaust gas supply unit that supplies an inert gas to the inside of the heat treatment chamber, wherein the control unit controls the heat treatment device to cause the inside of the heat treatment chamber by the exhaust unit in the first project The exhaust gas is supplied to the inside of the heat treatment chamber by the inert gas supply unit, and the inside of the heat treatment chamber is replaced with an inert gas atmosphere, and in the second project, the exhaust of the heat treatment chamber is stopped. And the supply of the inert gas, the substrate to be processed or the support substrate is placed on the heat treatment plate, and the surface of the adhesive on the substrate to be processed or the support substrate is heat-treated to a specific temperature, and the heat treatment is performed after the second process. The supply of the exhaust gas and the inert gas in the interior portion is heat-treated to a specific temperature by an adhesive placed on the substrate to be processed or the support substrate on the heat treatment plate. The joining system according to claim 7, wherein the exhaust portion is disposed above the heat treatment plate and at a central portion of a ceiling surface of the heat treatment chamber. The joining system according to claim 8, wherein the heat treatment apparatus includes a pressure reducing portion that decompresses the inside of the heat treatment chamber and a pressure reducing unit, and an inert gas supply unit that supplies an inert gas to the inside of the heat treatment chamber. The control unit controls the heat treatment device such that in the first process, the inside of the heat treatment chamber is evacuated to a vacuum atmosphere by the pressure reducing portion, and the internal dimension of the heat treatment chamber is obtained in the second project. Holding the substrate to be processed or the support substrate on the heat treatment plate while holding the vacuum atmosphere, the adhesive on the substrate to be processed or the support substrate is heat-treated to a specific temperature, after the second process, The inert gas supply unit supplies an inert gas to the inside of the heat treatment chamber to evacuate the substrate to be processed or the support substrate from the heat treatment plate.