JP5905407B2 - Sheet peeling apparatus, bonding system, peeling system, sheet peeling method, program, and computer storage medium - Google Patents

Description

  The present invention includes a sheet peeling device that peels a sheet-like object to be peeled temporarily provided on one substrate when bonding or peeling the substrates, and a bonding device that bonds the substrates to each other. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a system, a peeling system that includes the sheet peeling device and peels substrates, a sheet peeling method using the sheet peeling device, a program, and a computer storage medium.

  In recent years, for example, in semiconductor device manufacturing processes, semiconductor wafers (hereinafter referred to as “wafers”) have become larger in diameter. Further, in a specific process such as mounting, it is required to make the wafer thinner. For example, if a thin wafer with a large diameter is transported or polished as it is, the wafer may be warped or cracked. For this reason, for example, in order to reinforce the wafer, the wafer is attached to, for example, a wafer that is a support substrate or a glass substrate.

  The bonding of the wafer and the support substrate is performed by interposing an adhesive between the wafer and the support substrate using, for example, a bonding system. The bonding system includes, for example, a coating device that applies an adhesive to a wafer or a support substrate, a heat treatment device that heats the wafer or the support substrate to which the adhesive is applied, and presses the wafer and the support substrate through the adhesive. And a joining device for joining. And in this joining system, after apply | coating an adhesive agent to a wafer or a support substrate with a coating device and a heat processing apparatus and heating to predetermined temperature, the wafer and a support substrate are pressed and joined with a joining device (patent) Reference 1).

JP 2012-69900 A

  In recent years, various adhesives have been developed. And depending on the kind of adhesive agent, the adhesive tape which the adhesive agent adhered to both the surface and the back surface may be affixed on the wafer conveyed to the joining system described in the patent document 1 mentioned above. In this adhesive tape, a protective sheet is provided on the surface opposite to the adhesive surface of the wafer. In such a case, when bonding the wafer and the support substrate, it is necessary to peel the protective sheet from the wafer and the adhesive tape. However, in the joining system described in Patent Document 1, such peeling of the protective sheet is not considered at all, and there is room for improvement in the throughput of the joining process.

  Further, the wafer and the support substrate bonded through the adhesive are peeled off after a predetermined process such as a polishing process of the wafer is performed. Thus, when peeling a wafer and a support substrate, depending on the kind of adhesive agent, an adhesive agent may remain firmly on the wafer or support substrate after peeling. In such a case, it takes a long time to clean the wafer and the support substrate after peeling, and there is room for improvement in the throughput of the peeling process.

  The present invention has been made in view of such points, and in joining or peeling the substrates, a sheet-like object to be peeled temporarily provided on one substrate, such as a protective sheet or an adhesive, is provided. It is an object to efficiently peel and improve the throughput of the bonding process or the peeling process.

In order to achieve the above object, the present invention provides a sheet peeling apparatus for peeling a sheet-like object to be peeled temporarily provided on one substrate when bonding or peeling the substrates together. A substrate holding unit that holds the substrate, a sheet holding unit that holds an outer peripheral part of the object to be peeled, and an outer peripheral part of the object to be peeled that is held by the sheet holding part. so as to peel off from a substrate, have a, a moving mechanism for relatively moving the sheet holding part and the substrate holder, and the peeling area for peeling the object to be peeled body from said one substrate, It is divided into a disposal area for discarding the object to be peeled off in the peeling area, the substrate holding part and the moving mechanism are provided in the peeling area, and the sheet holding part is provided with the peeling area and the Can be moved between waste areas Is, the waste region and the peeled area is sealably configured respective internal atmosphere of the peeling area is characterized by being maintained at a positive pressure relative to the atmosphere in the waste area.

  Here, when the substrates are bonded to each other, for example, when the substrates are bonded to each other via an adhesive, a protective sheet that protects the adhesive provided on the surface of one substrate is used as the object to be peeled. . However, this adhesive includes, in addition to the adhesive itself, an adhesive tape having an adhesive attached to both the front surface and the back surface. And the protective sheet in this invention may be provided in the surface on the opposite side to the adhesive surface of one board | substrate in an adhesive tape, or after apply | coating an adhesive agent on one board | substrate, the said adhesive agent It may be provided so as to cover.

  In joining the substrates as described above, according to the present invention, in the sheet peeling apparatus, the outer peripheral portion of the protective sheet held by the sheet holding portion by relatively moving the substrate holding portion and the sheet holding portion by the moving mechanism. As a starting point, the protective sheet can be peeled from one substrate. Moreover, since the sheet holding portion holds the outer peripheral portion of the protective sheet, it is possible to suppress damage to a device formed on, for example, one substrate (substrate to be processed). Thus, since the peeling process of a protective sheet can be performed smoothly, the throughput of the whole joining process can be improved.

  On the other hand, when the bonded substrates are peeled off, as the object to be peeled, for example, the adhesive provided on the surface of one substrate is used for peeling the polymerized substrate in which the substrates are bonded with an adhesive. It is done. However, this adhesive is solidified in a sheet form on one substrate.

  In such a case, the adhesive that has been solidified in a sheet form after peeling off the polymerized substrate remains on one substrate and does not adhere to another substrate. Then, as in the case of bonding the substrates described above, the sheet-like adhesive can be smoothly peeled from the one substrate in the sheet peeling apparatus. Then, no adhesive remains on the one substrate and the other substrate after peeling, and cleaning of the one substrate and the other substrate is hardly necessary. Therefore, the throughput of the entire peeling process can be improved.

  The sheet holding portion may hold a plurality of locations on the outer peripheral portion of the object to be peeled.

  The substrate holding unit and the sheet holding unit may be arranged to face each other in the vertical direction, and the moving mechanism may include an elevating mechanism that raises and lowers the substrate holding unit in the vertical direction.

  The sheet holding portion includes a holding member that holds an outer peripheral portion of the object to be peeled, and a horizontal movement member that supports the holding member and moves the holding member in a horizontal direction. You may be comprised so that rotation is possible centering | focusing on the location supported by the said horizontal movement member.

  The sheet holding part may suck and hold an outer peripheral part of the peeled body.

  The sheet holding unit may mechanically hold an outer peripheral part of the object to be peeled.

  The sheet holding unit may include an adsorbing sheet that adsorbs the outer peripheral portion of the object to be peeled, and the adsorbing sheet may adsorb the outer peripheral portion of the object to be peeled with an adhesive.

  The sheet holding unit may include an adsorbing sheet that adsorbs the outer periphery of the object to be peeled, and the adsorbing sheet may adsorb the outer periphery of the object to be peeled by being applied with heat.

  The sheet holding unit may include an adsorbing sheet that adsorbs an outer peripheral portion of the object to be peeled, and the adsorbing sheet may be adsorbed with an ultrasonic wave to adsorb the outer peripheral part of the object to be peeled.

  When the object to be peeled is the protective sheet, the present invention according to another aspect is a joining system including the sheet peeling device, and the protective sheet is peeled by the sheet peeling device and the sheet peeling device. In addition, a substrate or substrate for the heat treatment apparatus that heats the one substrate to a predetermined temperature, a bonding apparatus that bonds the substrates together via the adhesive, the sheet peeling apparatus, the heat treatment apparatus, and the bonding apparatus. A transport station for transporting the superposed substrates bonded together, and a loading / unloading station for loading / unloading the substrate or the superposed substrate to / from the processing station. It is said.

  When the object to be peeled is the adhesive, the present invention according to another aspect is a peeling system including the sheet peeling device, which is peeled by a substrate peeling device for peeling a polymerization substrate and the substrate peeling device. A processing station provided with the sheet peeling device for peeling the adhesive on the one substrate, a loading / unloading station for loading / unloading a substrate or a superposed substrate with respect to the processing station, the processing station, and the And a transfer area for transferring a substrate or a superposed substrate between the loading / unloading station.

Another aspect of the present invention is a sheet peeling method for peeling a sheet-like object to be peeled temporarily provided on one substrate using a sheet peeling device when bonding or peeling the substrates together. The sheet peeling apparatus is divided into a peeling area for peeling the object to be peeled from the one substrate and a disposal area for discarding the peeled object peeled in the peeling area, and the peeling The region and the waste region are configured to be able to seal the inside, and the atmosphere in the separation region is maintained at a positive pressure with respect to the atmosphere in the waste region. A substrate holding portion, an outer peripheral portion of the object to be peeled on the one substrate held by the substrate holding portion is held by a sheet holding portion, and the substrate holding portion and the sheet holding portion are relatively moved by a moving mechanism. Move to As a base point to the outer peripheral portion of the object to be peeled body held by serial sheet holding portion, and peeled off the object to be peeled body from said one substrate, then, the sheet holding portion while maintaining the peeled the peeled body Is moved to the disposal area, and the object to be peeled is discarded in the disposal area .

  The sheet holding portion may hold a plurality of locations on the outer peripheral portion of the object to be peeled.

  The substrate holding part and the sheet holding part are arranged to face each other in the vertical direction, and the moving mechanism has an elevating mechanism for raising and lowering the substrate holding part in the vertical direction, and the substrate to be peeled is the one substrate. When peeling from the sheet holding portion, the substrate holding portion may be moved in the vertical direction so as to be separated from the sheet holding portion by the lifting mechanism.

  The sheet holding portion includes a holding member that holds an outer peripheral portion of the object to be peeled, and a horizontal movement member that supports the holding member and moves the holding member in a horizontal direction. When the substrate holding portion is moved in the vertical direction, the holding member is moved in the horizontal direction by the horizontal moving member, and the holding member is rotated around a place supported by the horizontal moving member to You may peel a peeling body from the outer peripheral part of said one board | substrate.

  The substrate to be peeled may be a protective sheet that protects the adhesive provided on the surface of the one substrate when the substrates are bonded together via an adhesive.

  The peeling target may be the adhesive provided on the surface of the one substrate when peeling the superposed substrate in which the substrates are bonded with an adhesive.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the sheet peeling apparatus in order to cause the sheet peeling apparatus to execute the sheet peeling method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  According to the present invention, when bonding or peeling substrates, a sheet-like object to be peeled temporarily provided on one substrate, such as a protective sheet or an adhesive, is efficiently peeled, and bonding treatment or peeling is performed. Processing throughput can be improved.

It is a top view which shows the outline of a structure of the joining system concerning this Embodiment. It is a side view which shows the outline of the internal structure of the joining system concerning this Embodiment. It is a side view of a to-be-processed wafer and a support substrate. It is explanatory drawing which shows a mode that the adhesive agent and the protection sheet were provided on the to-be-processed wafer. It is a cross-sectional view which shows the outline of a structure of a joining apparatus. It is a top view which shows the outline of a structure of a delivery part. It is a top view which shows the outline of a structure of a delivery arm. It is a side view which shows the outline of a structure of a delivery arm. It is a top view which shows the outline of a structure of an inversion part. It is a side view which shows the outline of a structure of an inversion part. It is a side view which shows the outline of a structure of an inversion part. It is a side view which shows the outline of a structure of a holding | maintenance arm and a holding member. It is explanatory drawing which shows the positional relationship of a delivery part and an inversion part. It is a side view which shows the outline of a structure of a conveyance part. It is explanatory drawing which shows a mode that the conveyance part was arrange | positioned in the joining apparatus. It is a top view which shows the outline of a structure of a 1st conveyance arm. It is a side view which shows the outline of a structure of a 1st conveyance arm. It is a top view which shows the outline of a structure of a 2nd conveyance arm. It is a side view which shows the outline of a structure of a 2nd conveyance arm. It is explanatory drawing which shows a mode that the notch was formed in the 2nd holding | maintenance part. It is a longitudinal cross-sectional view which shows the outline of a structure of a junction part. It is a longitudinal cross-sectional view which shows the outline of a structure of a junction part. It is a longitudinal cross-sectional view which shows the outline of a structure of a sheet peeling apparatus. It is a side view which shows the outline of a structure of a sheet | seat holding | maintenance part. It is a side view which shows the outline of a structure of a sheet | seat holding | maintenance part. It is a top view which shows the outline of a structure of a sheet | seat holding | maintenance part. It is a longitudinal cross-sectional view which shows the outline of a structure of the heat processing apparatus. It is a cross-sectional view which shows the outline of a structure of the heat processing apparatus. It is a flowchart which shows the main processes of a joining process. It is explanatory drawing which shows a mode that a wafer holding part is raised. It is explanatory drawing which shows a mode that the protection sheet on a to-be-processed wafer contact | abutted to the pad of the holding member. It is explanatory drawing which shows a mode that a protection sheet is peeled from a to-be-processed wafer and an adhesive agent. It is explanatory drawing which shows a mode that a protection sheet is peeled from a to-be-processed wafer and an adhesive agent. It is explanatory drawing which shows a mode that the protection sheet was peeled from the to-be-processed wafer and the adhesive agent. It is explanatory drawing which shows a mode that a protection sheet is hold | maintained horizontally with a holding member. It is explanatory drawing which shows a mode that a protection sheet is hold | maintained horizontally with a holding member and a chuck | zipper. It is explanatory drawing which shows a mode that a discard member is raised. It is explanatory drawing which shows a mode that a protection sheet is delivered to a discard member from a sheet | seat holding part. It is explanatory drawing which shows a mode that a discard member is lowered | hung. It is explanatory drawing which shows a mode that the some protective sheet was laminated | stacked on the discard member. It is a side view which shows the outline of a structure of the sheet | seat holding | maintenance part concerning other embodiment. It is a side view which shows the outline of a structure of the sheet | seat holding | maintenance part concerning other embodiment. It is a top view which shows the outline of a structure of the peeling system concerning this Embodiment. It is a flowchart which shows the main processes of peeling processing.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing the outline of the configuration of the joining system 1 according to the present embodiment. FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system 1.

In the bonding system 1, as shown in FIG. 3, a processing target wafer W as a processing target substrate (one substrate) and a support substrate S are bonded via an adhesive G, for example. Hereinafter, in the processing target wafer W, a surface bonded to the support substrate S via the adhesive G is referred to as a “bonding surface W _J ” as a surface, and a surface opposite to the bonding surface W _J is defined as a “back surface”. It is referred to as “non-bonding surface W _N ”. Similarly, in the support substrate S, a surface bonded to the processing target wafer W via the adhesive G is referred to as a “bonding surface S _J ” as a surface, and a surface opposite to the bonding surface S _J is defined as a “back surface”. It is referred to as “non-joint surface S _N ”. And in the joining system 1, the to-be-processed wafer W and the support substrate S are joined, and the superposition | polymerization wafer T as a superposition | polymerization substrate is formed. Note that wafer W is a wafer as a product, for example, joint surface W device is formed with a plurality of electronic circuits to _J, the non-bonding surface W _N is polished. The support substrate S is a glass substrate that has the same diameter as the wafer W to be processed and supports the wafer W to be processed. In the present embodiment, a case where a glass substrate is used as the support substrate will be described, but another substrate such as a wafer may be used.

In addition, the bonding surface W _J of wafer W that is transported to the bonding system 1, the protective sheet F as an object to be peeled member is provided to protect the pre-adhesive G and the adhesive G as shown in FIG. 4 ing. In the bonding system 1, the protective sheet F is peeled from the processing target wafer W and the adhesive G, and the processing target wafer W and the support substrate S are bonded. In the present embodiment, the adhesive G is an adhesive tape in which an adhesive is attached to both the front and back surfaces. And the protection sheet F is provided in the surface on the opposite side to the adhesion surface of the to-be-processed wafer W in an adhesive tape. Incidentally, in advance of the adhesive G is applied to the bonding surface W _J of wafer W that is transported to the bonding system 1 may be provided with a protective sheet F that protects to further cover the adhesive G.

As shown in FIG. 1, the bonding system 1 includes cassettes C _W , C _S , and C _T that can accommodate, for example, a plurality of wafers W to be processed, a plurality of support substrates S, and a plurality of superposed wafers T, respectively. The loading / unloading station 2 for loading / unloading and the processing station 3 including various processing apparatuses for performing predetermined processing on the processing target wafer W, the support substrate S, and the superposed wafer T are integrally connected. .

The loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the X direction (vertical direction in FIG. 1). These cassette mounting plates 11, cassettes _C W to the outside of the interface system _1, C S, when loading and unloading the _{C T,} a cassette _{C W,} C S, can be placed on _{C T} . As described above, the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support substrates S, and a plurality of superposed wafers T. The number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined. One of the cassettes may be used for collecting defective wafers. That is, it is a cassette that can separate from a normal superposed wafer T a wafer in which a defect occurs in the bonding between the processing target wafer W and the support substrate S due to various factors. In the present embodiment, among the plurality of cassettes C _T, using a one cassette C _T for the recovery of the fault wafer, and using the other cassette C _T for the accommodation of a normal bonded wafer T.

In the loading / unloading station 2, a wafer transfer unit 20 is provided adjacent to the cassette mounting table 10. The wafer transfer unit 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the X direction. The wafer transfer device 22 is also movable in the vertical direction and around the vertical axis (θ direction), and includes cassettes C _W , C _S , and C _T on each cassette mounting plate 11 and a third of the processing station 3 to be described later. The to-be-processed wafer W, the support substrate S, and the superposed wafer T can be transferred to and from the transition devices 50 and 51 of the processing block G3.

  The processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2, and G3 including various processing apparatuses. For example, a first processing block G1 is provided on the front side of the processing station 3 (X direction negative direction side in FIG. 1), and on the back side of the processing station 3 (X direction positive direction side in FIG. 1). A second processing block G2 is provided. Further, a third processing block G3 is provided on the processing station 3 on the side of the loading / unloading station 2 (the Y direction negative direction side in FIG. 1).

  For example, in the first processing block G1, bonding apparatuses 30 to 33 that press and bond the wafer W to be processed and the support substrate S through the adhesive G in the Y direction in this order from the loading / unloading station 2 side. They are arranged side by side.

  For example, in the second processing block G2, as shown in FIG. 2, a sheet peeling apparatus 40 for peeling the protective sheet F from the wafer to be processed W and the adhesive G and a wafer to be processed W from which the protective sheet F has been peeled are predetermined. Heat treatment apparatuses 41 to 43 for heating to the above temperature, and similar heat treatment apparatuses 44 to 46 are arranged in this order in the direction toward the loading / unloading station 2 side (Y direction negative direction in FIG. 1). The heat treatment apparatuses 41 to 43 and the heat treatment apparatuses 44 to 46 are provided in three stages in this order from the bottom. The number of heat treatment apparatuses 41 to 46 and the arrangement in the vertical direction and the horizontal direction can be arbitrarily set.

  For example, in the third processing block G3, transition devices 50 and 51 for the processing target wafer W, the supporting substrate S, and the overlapped wafer T are provided in two stages in this order from the bottom.

  As shown in FIG. 1, a wafer transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3. For example, a wafer transfer device 61 is disposed in the wafer transfer region 60. Note that the pressure in the wafer transfer region 60 is equal to or higher than atmospheric pressure, and the wafer W, the support substrate S, and the superposed wafer T are transferred in a so-called atmospheric system in the wafer transfer region 60.

  The wafer transfer device 61 has, for example, a transfer arm that can move around the vertical direction, horizontal direction (Y direction, X direction), and vertical axis. The wafer transfer device 61 moves in the wafer transfer region 60 and moves the wafer W to be processed and the support substrate to predetermined devices in the surrounding first processing block G1, second processing block G2, and third processing block G3. S and superposed wafer T can be conveyed.

  Next, the structure of the joining apparatuses 30 to 33 described above will be described. As shown in FIG. 5, the bonding apparatus 30 includes a processing container 100 that can seal the inside. A loading / unloading port 101 for the processing target wafer W, the support substrate S, and the overlapped wafer T is formed on the side surface of the processing container 100 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port. Yes.

  The inside of the processing container 100 is partitioned by the inner wall 102 into a preprocessing region D1 and a joining region D2. The loading / unloading port 101 described above is formed on the side surface of the processing container 100 in the preprocessing region D1. In addition, a carry-in / out port 103 for the processing target wafer W, the support substrate S, and the overlapped wafer T is also formed on the inner wall 102.

  In the pretreatment region D <b> 1, a delivery unit 110 for delivering the processing target wafer W, the support substrate S, and the overlapped wafer T to and from the outside of the bonding apparatus 30 is provided. The delivery unit 110 is disposed adjacent to the loading / unloading port 101. As will be described later, a plurality of, for example, two stages of delivery units 110 are arranged in the vertical direction, and any two of the processing target wafer W, the support substrate S, and the superposed wafer T can be delivered at the same time. For example, the processing target wafer W or the support substrate S before bonding may be delivered by one delivery unit 110, and the superposed wafer T after joining may be delivered by another delivery unit 110. Alternatively, the wafer W to be processed before bonding may be delivered by one delivery unit 110 and the support substrate S before joining may be delivered by another delivery unit 110.

  On the Y direction negative direction side of the pretreatment region D1, that is, on the loading / unloading port 103 side, a reversing unit 111 that reverses the front and back surfaces of the support substrate S, for example, is provided vertically above the delivery unit 110. Note that the reversing unit 111 can adjust the horizontal direction of the support substrate S as described later, and can also adjust the horizontal direction of the wafer W to be processed.

  On the Y direction positive direction side of the bonding region D2, a transfer unit 112 that transfers the wafer W, the support substrate S, and the overlapped wafer T to the delivery unit 110, the reversing unit 111, and the bonding unit 113 described later is provided. ing. The transport unit 112 is attached to the loading / unloading port 103.

  On the Y direction negative direction side of the bonding region D2, a bonding portion 113 that presses and bonds the wafer W to be processed and the support substrate S via the adhesive G is provided.

  Next, the configuration of the delivery unit 110 described above will be described. As shown in FIG. 6, the delivery unit 110 includes a delivery arm 120 and wafer support pins 121. The delivery arm 120 can deliver the wafer W to be processed, the support substrate S, and the overlapped wafer T to the outside of the bonding apparatus 30, that is, between the wafer transfer device 61 and the wafer support pins 121. The wafer support pins 121 are provided in a plurality of, for example, three locations, and can support the processing target wafer W, the supporting substrate S, and the superposed wafer T.

  The delivery arm 120 includes an arm unit 130 that holds the processing target wafer W, the support substrate S, and the overlapped wafer T, and an arm driving unit 131 that includes, for example, a motor. The arm part 130 has a substantially disk shape. The arm driving unit 131 can move the arm unit 130 in the X direction (vertical direction in FIG. 6). Moreover, the arm drive part 131 is attached to the rail 132 extended | stretched to a Y direction (left-right direction in FIG. 6), and is comprised so that the movement on the said rail 132 is possible. With this configuration, the delivery arm 120 can move in the horizontal direction (X direction and Y direction), and the wafer W to be processed, the support substrate S, and the overlap between the wafer transfer device 61 and the wafer support pins 121. The wafer T can be delivered smoothly.

  On the arm part 130, as shown in FIGS. 7 and 8, a plurality of, for example, four wafer support pins 140 for supporting the processing target wafer W, the supporting substrate S, and the superposed wafer T are provided. A guide 141 for positioning the processing target wafer W, the support substrate S, and the overlapped wafer T supported by the wafer support pins 140 is provided on the arm unit 130. A plurality of guides 141 are provided, for example, at four locations so as to guide the side surfaces of the processing target wafer W, the support substrate S, and the overlapped wafer T.

  On the outer periphery of the arm part 130, as shown in FIGS. 6 and 7, notches 142 are formed at, for example, four locations. The notch 142 causes the transfer arm of the wafer transfer device 61 to interfere with the arm unit 130 when the wafer W to be processed, the support substrate S, and the overlapped wafer T are transferred from the transfer arm of the wafer transfer device 61 to the transfer arm 120. Can be prevented.

  The arm part 130 is formed with two slits 143 along the X direction. The slit 143 is formed from the end surface of the arm portion 130 on the wafer support pin 121 side to the vicinity of the center portion of the arm portion 130. The slit 143 can prevent the arm unit 130 from interfering with the wafer support pins 121.

  Next, the configuration of the reversing unit 111 described above will be described. As shown in FIGS. 9 to 11, the reversing unit 111 has a holding arm 150 that holds the support substrate S and the wafer W to be processed. The holding arm 150 extends in the horizontal direction (X direction in FIGS. 9 and 10). The holding arm 150 is provided with holding members 151 for holding the support substrate S and the wafer W to be processed, for example, at four locations. As shown in FIG. 12, the holding member 151 is configured to be movable in the horizontal direction with respect to the holding arm 150. Further, on the side surface of the holding member 151, a notch 152 for holding the outer periphery of the support substrate S and the wafer W to be processed is formed. These holding members 151 can sandwich and hold the support substrate S and the wafer W to be processed.

  As shown in FIGS. 9 to 11, the holding arm 150 is supported by a first drive unit 153 provided with, for example, a motor. By this first drive unit 153, the holding arm 150 is rotatable about the horizontal axis and can move in the horizontal direction (the X direction in FIGS. 9 and 10 and the Y direction in FIGS. 9 and 11). The first drive unit 153 may rotate the holding arm 150 about the vertical axis to move the holding arm 150 in the horizontal direction. Below the first drive unit 153, for example, a second drive unit 154 including a motor or the like is provided. By this second driving unit 154, the first driving unit 153 can move in the vertical direction along the support pillar 155 extending in the vertical direction. Thus, the support substrate S and the wafer W to be processed held by the holding member 151 can be rotated around the horizontal axis and moved in the vertical direction and the horizontal direction by the first drive unit 153 and the second drive unit 154. it can.

  A position adjusting mechanism 160 that adjusts the horizontal direction of the support substrate S and the wafer W to be processed held by the holding member 151 is supported by the support pillar 155 via the support plate 161. The position adjustment mechanism 160 is provided adjacent to the holding arm 150.

  The position adjustment mechanism 160 includes a base 162 and a detection unit 163 that detects the position of the notch portion of the support substrate S and the wafer W to be processed. The position adjusting mechanism 160 detects the positions of the notch portions of the support substrate S and the wafer W to be processed by the detection unit 163 while moving the support substrate S and the wafer W to be processed held in the holding member 151 in the horizontal direction. Thus, the horizontal orientation of the support substrate S and the wafer W to be processed is adjusted by adjusting the position of the notch portion.

  As shown in FIG. 13, the delivery unit 110 configured as described above is arranged in two stages in the vertical direction, and the reversing unit 111 is arranged vertically above these delivery units 110. That is, the delivery arm 120 of the delivery unit 110 moves in the horizontal direction below the holding arm 150 and the position adjustment mechanism 160 of the reversing unit 111. Further, the wafer support pins 121 of the delivery unit 110 are disposed below the holding arm 150 of the reversing unit 111.

  Next, the configuration of the transport unit 112 described above will be described. As shown in FIG. 14, the transport unit 112 has a plurality of, for example, two transport arms 170 and 171. The first transfer arm 170 and the second transfer arm 171 are arranged in two stages in this order from the bottom in the vertical direction. The first transfer arm 170 and the second transfer arm 171 have different shapes as will be described later.

  At the base end portions of the transfer arms 170 and 171, for example, an arm driving unit 172 provided with a motor or the like is provided. Each arm 170, 171 can be independently moved in the horizontal direction by the arm driving unit 172. The transfer arms 170 and 171 and the arm driving unit 172 are supported by the base 173.

  The conveyance part 112 is provided in the loading / unloading port 103 formed in the inner wall 102 of the processing container 100 as shown in FIG.5 and FIG.15. The transport unit 112 can be moved in the vertical direction along the loading / unloading port 103 by, for example, a driving unit (not shown) provided with a motor or the like.

The first transfer arm 170 holds and transfers the back surface of the wafer to be processed W, the support substrate S, and the overlapped wafer T (non-bonded surfaces W _N and S _{N in the} wafer to be processed W and the support substrate S). As shown in FIG. 16, the first transfer arm 170 has an arm portion 180 whose tip is branched into two tip portions 180 a and 180 a, and a support that is formed integrally with the arm portion 180 and supports the arm portion 180. Part 181.

  As shown in FIGS. 16 and 17, a plurality of resin O-rings 182 are provided on the arm portion 180, for example, at four locations. The O-ring 182 comes into contact with the back surface of the processing target wafer W, the supporting substrate S, and the superposed wafer T, and the frictional force between the O ring 182 and the processing target wafer W, the supporting substrate S, and the back surface of the superposing wafer T The O-ring 182 holds the back surface of the processing target wafer W, the supporting substrate S, and the superposed wafer T. The first transfer arm 170 can horizontally hold the processing target wafer W, the support substrate S, and the overlapped wafer T on the O-ring 182.

  On the arm portion 180, guide members 183 and 184 provided outside the wafer W to be processed, the support substrate S, and the overlapped wafer T held by the O-ring 182 are provided. The first guide member 183 is provided at the distal end of the distal end portion 180 a of the arm portion 180. The second guide member 184 is formed in an arc shape along the outer periphery of the processing target wafer W, the supporting substrate S, and the overlapped wafer T, and is provided on the supporting portion 181 side. The guide members 183 and 184 can prevent the processing target wafer W, the support substrate S, and the overlapped wafer T from jumping out or sliding down from the first transfer arm 170. In addition, when the to-be-processed wafer W, the support substrate S, and the overlapped wafer T are held at appropriate positions on the O-ring 182, the to-be-processed wafer W, the support substrate S, and the overlapped wafer T are in contact with the guide members 183 and 184. do not do.

Second transfer arm 171 carries for example the surface of the supporting substrate S, that is, holding the outer periphery of the joint surface S _J. That is, the second transfer arm 171 holds and conveys the outer periphery of the joint surface S _J of the support substrate S front and back surfaces by the reversing unit 111 has been reversed. As shown in FIG. 18, the second transfer arm 171 has an arm portion 190 whose front end branches into two front end portions 190 a and 190 a, and a support that is formed integrally with the arm portion 190 and supports the arm portion 190. Part 191.

On the arm part 190, as shown in FIG.18 and FIG.19, the 2nd holding member 192 is provided in multiple, for example, four places. The second holding member 192 includes a mounting portion 193 for mounting the outer peripheral portion of the joint surface S _J of the support substrate S, extends from the mounting portion 193 upwards, the inner surface from the lower side to the upper side And a taper portion 194 expanding in a taper shape. The mounting portion 193 holds an outer peripheral portion within 1 mm from the peripheral edge of the support substrate S, for example. Further, since the inner side surface of the tapered portion 194 is enlarged in a tapered shape from the lower side to the upper side, for example, the support substrate S delivered to the second holding member 192 is displaced from a predetermined position in the horizontal direction. Also, the support substrate S is smoothly guided and positioned by the tapered portion 194 and is held by the mounting portion 193. The second transfer arm 171 can hold the support substrate S horizontally on the second holding member 192.

  In addition, as shown in FIG. 20, the notch 201a is formed in the 2nd holding | maintenance part 201 of the junction part 113 mentioned later, for example in four places. The second holding member 192 of the second transfer arm 171 is moved to the second holding unit 201 when the support substrate S is transferred from the second transfer arm 171 to the second holding unit 201 by the notch 201a. Interference can be prevented.

  Next, the structure of the junction part 113 mentioned above is demonstrated. As shown in FIG. 21, the bonding unit 113 includes a first holding unit 200 that holds and holds the processing target wafer W on the upper surface, and a second holding unit 201 that holds the supporting substrate S on the lower surface by suction. doing. The first holding unit 200 is provided below the second holding unit 201 and is disposed so as to face the second holding unit 201. That is, the wafer W to be processed held by the first holding unit 200 and the support substrate S held by the second holding unit 201 are arranged to face each other.

  Inside the first holding unit 200, a suction tube 210 for sucking and holding the processing target wafer W is provided. The suction pipe 210 is connected to a negative pressure generator (not shown) such as a vacuum pump. The first holding unit 200 is made of a material having a strength that does not deform even when a load is applied by a pressurizing mechanism 260 described later, for example, a ceramic such as silicon carbide ceramic or aluminum nitride ceramic.

  A heating mechanism 211 that heats the wafer W to be processed is provided inside the first holding unit 200. For the heating mechanism 211, for example, a heater is used.

  Below the first holding unit 200, a moving mechanism 220 that moves the first holding unit 200 and the wafer W to be processed in the vertical direction and the horizontal direction is provided. The moving mechanism 220 can move the first holding unit 200 three-dimensionally with an accuracy of, for example, ± 1 μm. The moving mechanism 220 includes a vertical moving unit 221 that moves the first holding unit 200 in the vertical direction and a horizontal moving unit 222 that moves the first holding unit 200 in the horizontal direction. The vertical moving unit 221 and the horizontal moving unit 222 each have, for example, a ball screw and a motor that rotates the ball screw.

  A support member 223 that is extendable in the vertical direction is provided on the horizontal moving part 222. The support member 223 is provided at, for example, three locations outside the first holding unit 200. As shown in FIG. 22, the support member 223 can support the protruding portion 230 provided to protrude downward from the lower surface of the outer periphery of the second holding portion 201.

  With the above moving mechanism 220, the wafer W to be processed on the first holding unit 200 can be aligned in the horizontal direction, and the first holding unit 200 is raised as shown in FIG. A bonding space R for bonding the processing wafer W and the support substrate S can be formed. The joint space R is a space surrounded by the first holding part 200, the second holding part 201, and the protruding part 230. Further, when the bonding space R is formed, the vertical distance between the processing target wafer W and the support substrate S in the bonding space R can be adjusted by adjusting the height of the support member 223.

  In addition, below the 1st holding | maintenance part 200, the raising / lowering pin (not shown) for supporting and raising / lowering the to-be-processed wafer W or the superposition | polymerization wafer T from the downward direction is provided. The elevating pin is inserted through a through hole (not shown) formed in the first holding part 200 and can protrude from the upper surface of the first holding part 200.

  For the second holding unit 201, a material having a strength that does not deform even when a load is applied by a pressurizing mechanism 260 described later, for example, a ceramic such as silicon carbide ceramic or aluminum nitride ceramic is used.

  As shown in FIG. 21, the above-described protruding portion 230 that protrudes downward from the outer peripheral lower surface is formed on the lower outer peripheral surface of the second holding portion 201. The protruding portion 230 is formed along the outer periphery of the second holding portion 201. Note that the protruding portion 230 may be formed integrally with the second holding portion 201.

  A sealing material 231 for maintaining the airtightness of the joining space R is provided on the lower surface of the protruding portion 230. The sealing material 231 is provided in an annular shape in a groove formed on the lower surface of the protruding portion 230, and for example, an O-ring is used. Moreover, the sealing material 231 has elasticity. Note that the sealing material 231 may be any component having a sealing function, and is not limited to this embodiment.

  A suction tube 240 for sucking and holding the support substrate S is provided inside the second holding unit 201. The suction tube 240 is connected to a negative pressure generator (not shown) such as a vacuum pump.

  In addition, an intake pipe 241 for taking in the atmosphere of the joint space R is provided inside the second holding unit 201. One end of the intake pipe 241 opens at a place where the support substrate S is not held on the lower surface of the second holding unit 201. The other end of the intake pipe 241 is connected to a negative pressure generator (not shown) such as a vacuum pump.

  Furthermore, a heating mechanism 242 for heating the support substrate S is provided inside the second holding unit 201. For the heating mechanism 242, for example, a heater is used.

  A support member 250 that supports the second holding unit 201 and a pressurizing mechanism 260 that presses the second holding unit 201 vertically downward are provided on the upper surface of the second holding unit 201. The pressurizing mechanism 260 includes a pressure vessel 261 provided so as to cover the processing target wafer W and the support substrate S, and a fluid supply pipe 262 that supplies a fluid, for example, compressed air, to the inside of the pressure vessel 261. Yes. The support member 250 is configured to be extendable in the vertical direction, and is provided at, for example, three locations outside the pressure vessel 261.

  The pressure vessel 261 is configured by, for example, a stainless steel bellows that is extendable in the vertical direction. The lower surface of the pressure vessel 261 is in contact with the upper surface of the second holding unit 201, and the upper surface is in contact with the lower surface of the support plate 263 provided above the second holding unit 201. The fluid supply pipe 262 has one end connected to the pressure vessel 261 and the other end connected to a fluid supply source (not shown). Then, by supplying fluid from the fluid supply pipe 262 to the pressure vessel 261, the pressure vessel 261 extends. At this time, since the upper surface of the pressure vessel 261 and the lower surface of the support plate 263 are in contact with each other, the pressure vessel 261 extends only in the downward direction, and the second holding portion 201 provided on the lower surface of the pressure vessel 261 is moved downward. Can be pressed. At this time, since the inside of the pressure vessel 261 is pressurized by the fluid, the pressure vessel 261 can press the second holding part 201 uniformly in the surface. Adjustment of the load when pressing the second holding unit 201 is performed by adjusting the pressure of the compressed air supplied to the pressure vessel 261. Note that the support plate 263 is preferably formed of a member having a strength that does not deform even when the pressure mechanism 260 receives a reaction force of a load applied to the second holding unit 201. Note that the support plate 263 of this embodiment may be omitted, and the upper surface of the pressure vessel 261 may be in contact with the ceiling surface of the processing vessel 100.

  In addition, since the structure of the joining apparatuses 31-33 is the same as that of the structure of the joining apparatus 30 mentioned above, description is abbreviate | omitted.

  Next, the structure of the sheet peeling apparatus 40 described above will be described. The sheet peeling apparatus 40 has a processing container 270 as shown in FIG. A loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 270 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  The inside of the processing container 270 is divided into a separation region E1 and a disposal region E2 by an inner wall 271. The inner wall 271 is formed with a passage port 272 for allowing a sheet holding unit 310 to be described later to pass therethrough, and the passage port 272 is provided with an opening / closing shutter 273. By closing the passage opening 272 with the opening / closing shutter 273, the inside of the separation area E1 and the inside of the disposal area E2 can be isolated from each other.

  A fan filter unit 280 (FFU: Fan Filter Unit) is provided on the ceiling surface of the processing container 270. By this fan filter unit 280, downward airflow (down flow) is formed inside the peeling area E1 and inside the disposal area E2, respectively.

  In the separation region E1 and the disposal region E2, exhaust ports 281 for exhausting the atmosphere inside the separation region E1 and the disposal region E2 are formed on the bottom surface of the processing container 270, respectively. Each exhaust port 281 is connected to an exhaust pipe 283 that communicates with a negative pressure generator 282 such as a vacuum pump.

  Then, when the opening / closing shutter 273 is opened, an air flow from the separation region E1 toward the disposal region E2 is generated. That is, in the separation region E1 and the disposal region E2, the pressure of the atmosphere in the separation region E1 is adjusted by adjusting the balance between the downflow from the fan filter unit 280 and the exhaust from the exhaust port 281 described above. Is positive with respect to the pressure of the atmosphere in the disposal area E2. For this reason, particles or the like do not flow into the separation area E1 from the disposal area E2, and particles do not adhere to the processing target wafer W or the adhesive G.

  In the peeling region E1, a wafer holding unit 290 is provided as a substrate holding unit for mounting and holding the processing target wafer W on the upper surface. A suction tube (not shown) for sucking and holding the wafer to be processed W is provided inside the wafer holding unit 290, and the suction tube is connected to a negative pressure generator (not shown) such as a vacuum pump, for example. Has been.

  Below the wafer holding unit 290, a moving mechanism 300 for moving the wafer holding unit 290 up and down in the vertical direction is provided. The moving mechanism 300 includes a support plate 301 that sucks and supports the lower surface of the wafer holding unit 290, a lifting mechanism 302 that lifts and lowers the support plate 301, and a support member 303 that supports the lower surface of the support plate 301. A suction pipe (not shown) for sucking and holding the wafer W to be processed is provided inside the support plate 301, and the suction pipe is connected to a negative pressure generator (not shown) such as a vacuum pump. ing. The elevating mechanism 302 has, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. The support member 303 is configured to be extendable in the vertical direction, and is provided at, for example, three locations with respect to the lower surface of the support plate 301. Note that the wafer holder 290 and the support plate 301 may be integrally formed.

  The elevating mechanism 302 and the support member 303 extend in the horizontal direction (Y direction in FIG. 23) and are supported by a fixing member 304 fixed to the side wall and the inner wall 271 of the processing container 270. The fixing member 304 is provided with a guide 305 for moving the support plate 301 vertically in the vertical direction. With this moving mechanism 300, the wafer holder 290 moves up and down in the vertical direction and does not move in the horizontal direction.

  Below the support plate 301, for example, three elevating pins 306 for supporting the wafer W to be processed from below and elevating it are provided. The elevating pin 306 can be moved up and down by an elevating drive unit 307. Near the center of the wafer holding part 290 and the support plate 301, for example, three through holes 308 are formed through the wafer holding part 290 and the support plate 301 in the thickness direction. The elevating pins 306 are inserted through the through holes 308 and can protrude from the upper surface of the wafer holder 290.

  Above the wafer holding part 290, a sheet holding part 310 that holds the outer peripheral part of the protective sheet F is provided. The wafer holding unit 290 and the sheet holding unit 310 are arranged to face each other in the vertical direction. Further, the sheet holding unit 310 can be moved in the horizontal direction by a moving mechanism (not shown), and is configured to be movable between the separation area E1 and the disposal area E2 via the passage port 272.

  The sheet holding unit 310 includes a holding member 311 that holds the outer peripheral portion of the protective sheet F as shown in FIGS. The holding member 311 is provided so as to hold a plurality of places, for example, two places on the outer peripheral portion of the protective sheet F. Further, for example, three holding members 311 are provided at each holding location. In addition, the location of the outer peripheral portion of the protective sheet F held by these three holding members may be referred to as a holding location 312.

  The holding member 311 is configured to be able to switch between suction of the outer peripheral portion of the protective sheet F and blowing of gas (hereinafter referred to as “purge gas”) to the outer peripheral portion of the protective sheet F. The holding member 311 can suck and hold the outer peripheral portion of the protective sheet F, and can release the protective sheet F by blowing a purge gas. A pad 313 having an open bottom surface is provided at the tip of the holding member 311 in order to perform suction of the outer peripheral portion of the protective sheet F and blowing of purge gas.

  A pipe 314 is connected to the holding member 311. The pipe 314 is branched into two pipes 314 a and 314 b through a valve 315. The pipe 314a communicates with a negative pressure generator 316 such as a vacuum pump. The piping 314a is provided with an adjusting device group 317 for adjusting the vacuum pressure. The pipe 314b communicates with a gas supply source 318 that stores a purge gas such as nitrogen gas or the atmosphere. The pipe 314b is provided with a supply device group 319 including a valve for controlling the flow of the purge gas, a flow rate adjusting unit, and the like. The negative pressure generator 316 may perform vacuuming by connecting a plurality of holding members 311 through one line, but may vacuum the plurality of holding members 311 individually. Further, the ejector method is preferable as the vacuuming method.

  The holding member 311 is supported by a horizontal moving member 320 that moves the holding member 311 in the horizontal direction. The horizontal movement member 320 supports the three holding members 311 at the holding locations 312 on the outer peripheral portion of the protective sheet F. That is, two horizontal moving members 320 are provided. Each holding member 311 is configured to be rotatable about a support point C supported by, for example, a horizontal movement member 320.

  The horizontal movement member 320 has a drive unit (not shown) such as a motor, for example, and is configured to be movable on a rail 321 common to the two horizontal movement members 320 and 320. The horizontal movement member 320 has a rectangular shape in plan view. An elastic member 322 such as a spring for connecting the two holding members 311 and 311 is provided between the two horizontal moving members 320 and 320. The elastic member 322 is provided, for example, so as to expand and contract in the same direction as the extending direction of the rail 321.

  A support plate 323 that supports the horizontal moving member 320, the rail 321, and the elastic member 322 on the upper surface is provided below the horizontal moving member 320. The support plate 323 has a rectangular shape in plan view.

  On the lower surface side of the support plate 323, a chuck 324 for adsorbing and holding the protective sheet F on the lower surface is provided. The chuck 324 has a circular shape in plan view. In the chuck 324, an opening 324 a for inserting the holding member 311 is formed at a position corresponding to the holding location 312 on the outer peripheral portion of the protective sheet F. A suction tube (not shown) for sucking and holding the protective sheet F is provided inside the chuck 324, and the suction tube is connected to a negative pressure generator (not shown) such as a vacuum pump. Yes.

  An elevating mechanism 325 for elevating the chuck 324 is provided on the side surface of the support plate 323. The elevating mechanism 325 is provided fixed to the support plate 323. The elevating mechanism 325 includes an elevating member 326 that supports the chuck 324 and can move up and down, and a motor (not shown) that elevates and lowers the elevating member 326.

  As shown in FIG. 23, the discard area E2 is provided with, for example, a flat discard member 330 that holds a plurality of protective sheets F in a stacked manner. In addition, since the discard member 330 is discarded together with the protective sheet F as described later, the material and the like are not particularly limited.

  The discard member 330 is provided with a moving mechanism 340 that moves the discard member 330 up and down in the vertical direction. The moving mechanism 340 includes a support plate 341 that sucks and supports the lower surface of the discard member 330 and an elevating mechanism 342 that raises and lowers the support plate 341. A suction pipe (not shown) for sucking and holding the waste member 330 is provided inside the support plate 341, and the suction pipe is connected to a negative pressure generator (not shown) such as a vacuum pump, for example. Yes. The elevating mechanism 342 includes a pair of support columns that support the support plate 341, and an elevating drive unit (not shown) such as a motor that elevates and lowers the support plate 341 along the support columns.

  Next, the structure of the heat processing apparatus 41-46 mentioned above is demonstrated. As shown in FIG. 27, the heat treatment apparatus 41 has a processing vessel 350 whose inside can be closed. A loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 350 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  A gas supply port 351 for supplying an inert gas such as nitrogen gas is formed inside the processing container 350 on the ceiling surface of the processing container 350. A gas supply pipe 353 that communicates with a gas supply source 352 is connected to the gas supply port 351. The gas supply pipe 353 is provided with a supply device group 354 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like.

  An air inlet 355 for sucking the atmosphere inside the processing container 350 is formed on the bottom surface of the processing container 350. An intake pipe 357 communicating with a negative pressure generating device 356 such as a vacuum pump is connected to the intake port 355.

  Inside the processing container 350, a heating unit 360 that heat-processes the processing target wafer W and a temperature control unit 361 that adjusts the temperature of the processing target wafer W are provided. The heating unit 360 and the temperature adjustment unit 361 are arranged side by side in the Y direction.

  The heating unit 360 includes an annular holding member 371 that houses the hot plate 370 and holds the outer peripheral portion of the hot plate 370, and a substantially cylindrical support ring 372 that surrounds the outer periphery of the holding member 371. The hot plate 370 has a thick, substantially disk shape, and can place and heat the wafer W to be processed. The hot plate 370 includes a heater 373, for example. The heating temperature of the hot plate 370 is controlled by the control unit 410, for example, and the wafer W to be processed placed on the hot plate 370 is heated to a predetermined temperature.

  Below the heat plate 370, for example, three elevating pins 380 for supporting the wafer W to be processed from below and elevating it are provided. The elevating pin 380 can be moved up and down by the elevating drive unit 381. Near the center of the hot plate 370, through holes 382 that penetrate the hot plate 370 in the thickness direction are formed, for example, at three locations. The elevating pins 380 are inserted through the through holes 382 and can protrude from the upper surface of the hot plate 370.

  The temperature adjustment unit 361 has a temperature adjustment plate 390. As shown in FIG. 28, the temperature adjustment plate 390 has a substantially rectangular flat plate shape, and the end surface on the heat plate 370 side is curved in an arc shape. In the temperature adjusting plate 390, two slits 391 are formed along the Y direction. The slit 391 is formed from the end surface of the temperature adjustment plate 390 on the hot plate 370 side to the vicinity of the center of the temperature adjustment plate 390. The slits 391 can prevent the temperature adjustment plate 390 from interfering with the elevation pins 380 of the heating unit 360 and the elevation pins 400 of the temperature adjustment unit 361 described later. The temperature adjustment plate 390 includes a temperature adjustment member (not shown) such as a Peltier element. The cooling temperature of the temperature adjustment plate 390 is controlled by the control unit 410, for example, and the wafer W to be processed placed on the temperature adjustment plate 390 is cooled to a predetermined temperature.

  The temperature adjustment plate 390 is supported by the support arm 392 as shown in FIG. A drive unit 393 is attached to the support arm 392. The drive unit 393 is attached to a rail 394 extending in the Y direction. The rail 394 extends from the temperature adjustment unit 361 to the heating unit 360. With this drive unit 393, the temperature adjustment plate 390 can move between the heating unit 360 and the temperature adjustment unit 361 along the rail 394.

  Below the temperature adjustment plate 390, for example, three elevating pins 400 for supporting and elevating the wafer W to be processed from below are provided. The elevating pin 400 can be moved up and down by the elevating drive unit 401. The elevating pin 400 is inserted through the slit 391 and can protrude from the upper surface of the temperature adjustment plate 390.

  In addition, since the structure of the heat processing apparatuses 42-46 is the same as that of the heat processing apparatus 41 mentioned above, description is abbreviate | omitted.

  Moreover, in the heat treatment apparatuses 41 to 46, the temperature of the superposed wafer T can also be adjusted. Further, in order to adjust the temperature of the superposed wafer T, a temperature adjusting device (not shown) may be provided. The temperature adjustment device has the same configuration as the heat treatment device 41 described above, and a temperature adjustment plate is used instead of the hot plate 370. A cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature.

  The above joining system 1 is provided with a control unit 410 as shown in FIG. The control unit 410 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for controlling processing of the processing target wafer W, the support substrate S, and the overlapped wafer T in the bonding system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize the below-described joining process in the joining system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 410 from the storage medium H.

  Next, a method for bonding the processing target wafer W and the support substrate S performed using the bonding system 1 configured as described above will be described. FIG. 29 is a flowchart showing an example of main steps of the joining process.

First, a cassette C _W housing a plurality of the processed the wafer _W, the cassette C _S accommodating a plurality of supporting substrates _S, and an empty cassette C _T is a predetermined cassette mounting plate 11 of the carry-out station 2 Placed. At this time, an adhesive G and a protective sheet F are provided in advance on the wafer W to be processed. Thereafter, the wafer _W to be processed in the cassette CW is taken out by the wafer transfer device 22 and transferred to the transition device 50 of the third processing block G3 of the processing station 3. At this time, the wafer W to be processed is transported with its non-bonding surface W _N facing downward.

Next, the wafer W to be processed is transferred to the sheet peeling device 40 by the wafer transfer device 61. The wafer W to be processed carried into the sheet peeling apparatus 40 is transferred from the wafer transfer apparatus 61 to the wafer holding unit 290 and held by suction. At this time, the non-bonding surface W _N of the wafer W is held by suction. The opening / closing shutter 273 is closed, and the inside of the peeling region E1 is sealed.

Thereafter, the horizontal position of the sheet holding unit 310 facing the wafer holding unit 290 is adjusted. Subsequently, as shown in FIG. 30, the wafer holding unit 290 is raised. As shown in FIG. 31, the wafer holding unit 290 moves up until the protective sheet F on the processing target wafer W comes into contact with the pad 313 of the holding member 311. Then, the negative pressure generating device 316 is operated and the outer peripheral portion of the protective sheet F is sucked and held by the holding member 311. Since the holding member 311 for holding the outer peripheral portion of the protective sheet F, devices formed on the bonding surface W _J of wafer W does not suffer damage. Further, since the central portion of the protective sheet F is not held, the film thickness of the adhesive G on the wafer to be processed W does not become nonuniform, and the subsequent processing of the wafer W to be processed and the support substrate S can be appropriately performed. it can.

  Thereafter, as shown in FIGS. 32 and 33, the wafer holding unit 290 is lowered, and the horizontal moving member 320 is moved inward, that is, in the direction in which the two horizontal moving members 320 and 320 are close to each other, thereby holding the holding member 311. Move horizontally. At this time, with the movement of the horizontal movement member 320, the holding member 311 is rotated by the elastic force of the elastic member 322 so that the pad 313 moves outward. Then, the protective sheet F is peeled from the processing target wafer W and the adhesive G with the outer peripheral portion of the protective sheet F held by the holding member 311 as a base point. That is, the protective sheet F is peeled from the outer peripheral portion toward the central portion. Then, as shown in FIG. 34, the protective sheet F is peeled from the processing target wafer W and the adhesive G (step A1 in FIG. 29).

  Thereafter, as shown in FIG. 35, the horizontal movement member 320 is moved to the outside, that is, the direction in which the two horizontal movement members 320 and 320 are separated from each other, and the holding member 311 is moved in the horizontal direction. As the horizontal moving member 320 moves, the holding member 311 rotates so that the pad 313 moves inward by the elastic force of the elastic member 322. The protective sheet F is held horizontally by the holding member 311.

  Thereafter, as shown in FIG. 36, the chuck 324 is lowered, and the chuck 324 and the protective sheet F are brought into contact with each other. Then, the central portion of the protective sheet F is sucked and held by the chuck 324. That is, the protective sheet F is held by the holding member 311 and the chuck 324. Note that the protective sheet F is held by both the holding member 311 and the chuck 324 in this way when the sheet holding unit 310 is moved from the peeling area E1 to the disposal area E2 as described later. This is to prevent this.

  Thereafter, the opening / closing shutter 273 is opened, and the sheet holding unit 310 is moved from the separation area E1 to the disposal area E2. When the movement of the sheet holding unit 310 is completed, the open / close shutter 273 is closed to seal the inside of the disposal area E2.

  Thereafter, the discard member 330 is raised as shown in FIG. As shown in FIG. 38, the discard member 330 is raised until the protective sheet F contacts the discard member 330. Subsequently, the valve 315 is operated to switch between suction of the outer peripheral portion of the protective sheet F in the holding member 311 and blowing of purge gas to the outer peripheral portion of the protective sheet F. Specifically, the negative pressure generator 316 is stopped and the purge gas is supplied from the gas supply source 318. Further, along with the supply of the purge gas from the holding member 311, the suction holding of the protective sheet F in the chuck 324 is also stopped. Thus, the protective sheet F is transferred from the sheet holding unit 310 to the discard member 330. The protective sheet F is held on the discard member 330 by the adhesive G remaining on the surface of the protective sheet F and the electrostatic force generated between the protective sheet F and the discard member 330. Thereafter, as shown in FIG. 39, the discard member 330 is lowered, and the protective sheet F is discarded (step A2 in FIG. 29).

  A dummy sheet may be provided on the discard member 330. Then, the protective sheet F that is discarded first is appropriately held on the dummy sheet.

  The above steps A1 and A2 are repeated, and a plurality of protective sheets are laminated on the discard member 330 as shown in FIG. Further, since the protective sheet F peeled off from the processing target wafer W and the adhesive G is held in a plurality of, for example, two holding places 312 in the sheet holding unit 310, the protective sheet F is held in step A2 by the sheet holding. The protective sheet F is appropriately held at a predetermined position of the discard member 330 also when it is transferred from the portion 310 to the discard member 330. Therefore, the plurality of protective sheets F are appropriately stacked on the discard member 330 without being displaced in the horizontal direction. Then, the discard member 330 in which the predetermined number of protective sheets F are stacked is carried out of the sheet peeling device 40 and discarded.

  The discard member 330 may be provided with a guide (not shown) for adjusting the horizontal position of the protective sheet F. The discard member 330 may be provided with a pressing plate (not shown) that applies pressure to the laminated protective sheets F so that the laminated protective sheets F are appropriately stacked. In any case, the protective sheet F is more appropriately laminated.

  Next, the processing target wafer W from which the protective sheet F has been peeled is transferred to the heat treatment apparatus 41 by the wafer transfer apparatus 61. At this time, the inside of the heat treatment apparatus 41 is maintained in an inert gas atmosphere. When the wafer W to be processed is loaded into the heat treatment apparatus 41, the superposed wafer T is transferred from the wafer transfer apparatus 61 to the lift pins 400 that have been lifted and waited in advance. Subsequently, the elevating pins 400 are lowered, and the processing target wafer W is placed on the temperature adjustment plate 390.

  Thereafter, the temperature adjustment plate 390 is moved along the rail 394 to above the heat plate 370 by the driving unit 393, and the wafer W to be processed is transferred to the lift pins 380 that have been lifted and waited in advance. Thereafter, the lift pins 380 are lowered, and the wafer W to be processed is placed on the hot plate 370. And the to-be-processed wafer W on the hot platen 370 is heated by predetermined temperature, for example, 100 to 300 degreeC (process A3 of FIG. 29). By performing the heating by the hot plate 370, the adhesive G on the wafer W to be processed is heated, and the adhesive G is cured.

  Thereafter, the elevating pins 380 are raised, and the temperature adjusting plate 390 is moved above the hot plate 370. Subsequently, the wafer W to be processed is transferred from the lift pins 380 to the temperature adjustment plate 390, and the temperature adjustment plate 390 moves to the wafer transfer region 60 side. During the movement of the temperature adjustment plate 390, the temperature of the processing target wafer W is adjusted to a predetermined temperature.

  The wafer W to be processed that has been heat-treated by the heat treatment apparatus 41 is transferred to the bonding apparatus 30 by the wafer transfer apparatus 61. The wafer W to be processed transferred to the bonding apparatus 30 is transferred from the wafer transfer apparatus 61 to the transfer arm 120 of the transfer unit 110 and then transferred from the transfer arm 120 to the wafer support pins 121. Thereafter, the wafer W to be processed is transferred from the wafer support pins 121 to the reversing unit 111 by the first transfer arm 170 of the transfer unit 112.

  The wafer to be processed W transferred to the reversing unit 111 is held by the holding member 151 and moved to the position adjusting mechanism 160. Then, the position adjusting mechanism 160 adjusts the position of the notch portion of the processing target wafer W to adjust the horizontal direction of the processing target wafer W (step A4 in FIG. 29).

Thereafter, the wafer W to be processed is transferred from the reversing unit 111 to the bonding unit 113 by the first transfer arm 170 of the transfer unit 112. The to-be-processed wafer W conveyed by the junction part 113 is mounted in the 1st holding | maintenance part 200 (process A5 of FIG. 29). On the first holding portion 200, a state where the bonding surface W _J of wafer W is facing upward, i.e. wafer W in a state where the adhesive G is facing upward is placed.

  While the processes A1 to A5 described above are performed on the wafer W to be processed, the support substrate S is processed following the wafer W to be processed. The support substrate S is transferred to the bonding apparatus 30 by the wafer transfer device 61. In addition, about the process by which the support substrate S is conveyed to the joining apparatus 30, since it is the same as that of the said embodiment, description is abbreviate | omitted.

  The support substrate S transferred to the bonding apparatus 30 is transferred from the wafer transfer apparatus 61 to the transfer arm 120 of the transfer unit 110 and then transferred from the transfer arm 120 to the wafer support pins 121. Thereafter, the support substrate S is transferred from the wafer support pins 121 to the reversing unit 111 by the first transfer arm 170 of the transfer unit 112.

The support substrate S transported to the reversing unit 111 is held by the holding member 151 and moved to the position adjustment mechanism 160. Then, the position adjusting mechanism 160 adjusts the position of the notch portion of the support substrate S to adjust the horizontal direction of the support substrate S (step A6 in FIG. 29). The support substrate S whose horizontal direction has been adjusted is moved in the horizontal direction from the position adjustment mechanism 160 and moved upward in the vertical direction, and then the front and back surfaces thereof are reversed (step A7 in FIG. 29). That is, the bonding surface S _J of the support substrate S is directed downward.

Thereafter, the support substrate S is moved downward in the vertical direction, and is then transferred from the reversing unit 111 to the bonding unit 113 by the second transfer arm 171 of the transfer unit 112. In this case, second transfer arm 171, since it holds only the outer peripheral portion of the joint surface S _J of the support substrate S, for example, that the joint surface S _J is soiled by particles or the like adhering to the second transfer arm 171 There is no. The support substrate S conveyed to the bonding part 113 is sucked and held by the second holding part 201 (step A8 in FIG. 29). In the second holding portion 201, the supporting substrate S is held in a state where the bonding surfaces S _J is directed downward of the supporting substrate S.

  In the bonding apparatus 30, when the wafer to be processed W and the support substrate S are held by the first holding unit 200 and the second holding unit 201, respectively, a moving mechanism is provided so that the wafer to be processed W faces the support substrate S. The horizontal position of the first holding unit 200 is adjusted by 220 (step A9 in FIG. 29).

  Next, the first holding unit 200 is lifted by the moving mechanism 220 and the support member 223 is extended to support the second holding unit 201 by the support member 223. At this time, by adjusting the height of the support member 223, the vertical distance between the wafer to be processed W and the support substrate S is adjusted to be a predetermined distance (step A10 in FIG. 29). In this way, a sealed joint space R is formed between the first holding part 200 and the second holding part 201.

Thereafter, the atmosphere in the joining space R is sucked from the suction pipe 241 to a predetermined degree of vacuum. Then, by adjusting the height of the support member 223, it is brought into contact with bonding surface S _J entire bonding surface W _J entire the support substrate S to be processed wafer W. Then, the processing target wafer W and the support substrate S are bonded by the adhesive G (step A11 in FIG. 29). At this time, since the bonding space R is maintained at a predetermined degree of vacuum, generation of voids between the processing target wafer W and the support substrate S can be suppressed. At this time, the sealing material 231 is elastically deformed, and the first holding unit 200 and the second holding unit 201 are in close contact with each other. Then, while heating the processing target wafer W and the support substrate S at a predetermined temperature, for example, 200 ° C. by the heating mechanisms 211 and 242, the second holding unit 201 is pressed downward at a predetermined pressure by the pressure mechanism 260. Then, the to-be-processed wafer W and the support substrate S are more firmly bonded and bonded (step A12 in FIG. 29).

  The overlapped wafer T in which the processing target wafer W and the support substrate S are bonded is transferred from the bonding unit 113 to the delivery unit 110 by the first transfer arm 170 of the transfer unit 112. The overlapped wafer T transferred to the transfer unit 110 is transferred to the transfer arm 120 via the wafer support pins 121, and further transferred from the transfer arm 120 to the wafer transfer device 61.

Next, the superposed wafer T is transferred to the heat treatment device 42 by the wafer transfer device 61. In the heat treatment apparatus 42, the temperature of the superposed wafer T is adjusted to a predetermined temperature, for example, normal temperature (23 ° C.). Thereafter, bonded wafer T is transferred to the transition unit 51 by the wafer transfer apparatus 61, as by the wafer transfer apparatus 22 of the subsequent unloading station 2 is transported to the cassette C _T of predetermined cassette mounting plate 11. In this way, a series of bonding processing of the processing target wafer W and the support substrate S is completed.

  According to the above-described embodiment, in step A1, the wafer holding unit 290 is lowered by the lifting mechanism 302 of the moving mechanism 300, and the protective sheet is used with the outer periphery of the protective sheet F held by the sheet holding unit 310 as a base point. F can be peeled from the wafer W and the adhesive G. In addition, since the sheet holding unit 310 holds the outer peripheral portion of the protective sheet F, it is possible to prevent the device formed on the processing target wafer W from being damaged. Thus, since the peeling process of the protective sheet F can be performed smoothly, the throughput of the whole joining process of the to-be-processed wafer W and the support substrate S can be improved.

  Further, when the wafer holding unit 290 is lowered in the step A1, the horizontal moving member 320 and the holding member 311 are moved in the horizontal direction and the holding member 311 is rotated, so that the protective sheet F held by the holding member 311 is attached to the protective sheet F. On the other hand, the force which peels off the protection sheet F from the to-be-processed wafer W and the adhesive agent G acts. Therefore, the peeling process of the protective sheet F can be performed more smoothly.

  Further, since the sheet holding unit 310 holds a plurality of, for example, two holding locations 312 on the outer periphery of the protective sheet F, the base point when the protective sheet F is peeled from the processing target wafer W and the adhesive G in step A1. Can be made more than one. For this reason, the peeling process of the protection sheet F can be performed more smoothly.

  The sheet peeling apparatus 40 is divided into a peeling area E1 and a disposal area E2, and after the protective sheet F is peeled from the wafer W and the adhesive G in the peeling area E1, the sheet holding unit 310 is moved to the disposal area E2. The protective sheet F is discarded in the discard area E2. Thus, since both the process A1 and the process A2 can be performed with one sheet peeling apparatus 40, the peeling process of the protective sheet F can be performed more smoothly.

  In addition, since the pressure of the atmosphere in the separation area E1 is a positive pressure with respect to the pressure of the atmosphere in the disposal area E2, when the open / close shutter 273 is opened, an air flow from the separation area E1 to the disposal area E2 is generated. . For this reason, particles or the like do not flow into the separation area E1 from the disposal area E2, and particles do not adhere to the processing target wafer W or the adhesive G. Therefore, the subsequent bonding process between the processing target wafer W and the support substrate S can be performed appropriately.

  Further, since the bonding system 1 includes the bonding devices 30 to 33, the sheet peeling device 40, and the heat treatment devices 41 to 46, the processing for the processing target wafer W and the processing for the support substrate S can be performed in parallel. . Therefore, the wafer W to be processed and the support substrate S can be bonded efficiently, and the throughput of the bonding process can be further improved.

  In the sheet peeling apparatus 40 of the above embodiment, the sheet holding unit 310 adsorbs and holds the outer peripheral portion of the protective sheet F, but the method of holding the protective sheet F is not limited to this, and various methods can be used. I can take it.

  For example, as illustrated in FIG. 41, the sheet holding unit 310 may include a holding member 500 instead of the holding member 311. The holding member 500 includes a vertical member 501 extending in the vertical direction and a horizontal member 502 extending in the horizontal direction from the lower end of the vertical member 501. The front end of the horizontal member 502 protrudes so as to hold the lower surface of the outer peripheral portion of the protective sheet F. The holding member 500 (horizontal member 502) mechanically holds the outer peripheral portion of the protective sheet F.

  Further, for example, as illustrated in FIG. 42, the sheet holding unit 310 may include a holding member 510 instead of the holding member 311. The holding member 510 includes a vertical member 511 extending in the vertical direction and an adsorption sheet 512 provided at the lower end of the vertical member 501. The adsorption sheet 512 may adsorb the outer peripheral part of the protective sheet F with an adhesive, for example. Moreover, the adsorption sheet 512 may adsorb | suck the outer peripheral part of the protection sheet F, for example with heat | fever. Furthermore, the suction sheet 512 may be provided with, for example, ultrasonic waves to suck the outer peripheral portion of the protective sheet F. The holding member 510 holds the outer peripheral portion of the protective sheet F with the suction sheet 512.

  In any case, the protective sheet F can be appropriately held by the sheet holding unit 310. Therefore, the peeling process of the protective sheet F in process A1 and A2 can be performed appropriately.

  In the sheet holding unit 310 of the above-described embodiment, the holding member 311 has a planar shape with the pad 313 adsorbing and holding the outer peripheral portion of the protective sheet F. However, the holding member 311 adsorbs the outer peripheral portion of the protective sheet F in a slit shape. The outer peripheral portion of the protective sheet F may be adsorbed and held in a dot shape. However, when the outer peripheral portion of the protective sheet F is sucked and held in a dot shape, the pressure for sucking the protective sheet F can be increased, so that the outer peripheral portion of the protective sheet F can be held more appropriately.

  In the sheet peeling apparatus 40 according to the above embodiment, the sheet holding unit 310 holds the outer peripheral portion of the protective sheet F at the two holding places 312, but may be held at three or more holding places 312. . Further, if the holding force of the holding member 311 with respect to the protective sheet F is sufficiently large, the sheet holding unit 310 may hold the outer peripheral portion of the protective sheet F at one holding place 312. Note that the number of horizontally moving members 320 is also changed in accordance with the number of holding portions 312.

  Further, for example, a spring is used as the elastic member 322 provided between the horizontal moving members 320 and 320, but the elastic member 322 is not limited to this as long as the distance between the horizontal moving members 320 and 320 can be adjusted.

  In the sheet peeling apparatus 40 of the above embodiment, the moving mechanism 300 moves the wafer holding unit 290 up and down, but the sheet holding unit 310 may move up and down, and both the wafer holding unit 290 and the sheet holding unit 310 may be moved up and down. May be raised and lowered. Further, the moving direction of the wafer holding unit 290 (or the sheet holding unit 310) is not limited to the vertical direction, and may be set in an arbitrary direction.

  Similarly, the moving mechanism 340 moves the discard member 330 up and down. However, the sheet holding unit 310 may move up and down, and both the discard member 330 and the sheet holding unit 310 may move up and down. Further, the moving direction of the discard member 330 (or the sheet holding unit 310) is not limited to the vertical direction, and may be set in an arbitrary direction.

In the above embodiment, in the bonding apparatus 31, the wafer to be processed W and the support substrate S are bonded in a state where the wafer to be processed W is disposed on the lower side and the support substrate S is disposed on the upper side. The upper and lower arrangements of the processing target wafer W and the support substrate S may be reversed. In such a case, pre-adhesive G and protective sheeting F on the bonding surface S _J is provided in the supporting substrate S, step A1~A5 described above for the supporting substrate S is performed. Further, the above-described steps A6 to A8 are performed on the processing target wafer W. And the process A9-A12 mentioned above is performed, and the support substrate S and the to-be-processed wafer W are joined.

  In the above embodiment, the wafer W to be processed is heated to a predetermined temperature of 100 ° C. to 300 ° C. in the step A3. However, the heat treatment of the wafer W to be processed may be performed in two stages. For example, in the heat treatment apparatus 41, after heating to a first heat treatment temperature, for example, 100 ° C to 150 ° C, the heat treatment apparatus 44 is heated to a second heat treatment temperature, for example, 150 ° C to 300 ° C. In such a case, the temperature of the heating mechanism itself in the heat treatment apparatus 41 and the heat treatment apparatus 44 can be made constant. Therefore, it is not necessary to adjust the temperature of the heating mechanism, and the throughput of the bonding process between the processing target wafer W and the support substrate S can be further improved.

  Although the case where the to-be-processed wafer W and the support substrate S were joined was demonstrated in the above embodiment, this invention is applicable also when peeling the superposition | polymerization wafer T to the to-be-processed wafer W and the support substrate S. FIG. FIG. 43 is a plan view schematically showing the configuration of the peeling system 600 according to the present embodiment.

In the peeling system 600, as shown in FIG. 3, the wafer W to be processed and the support substrate S are peeled off from the overlapped wafer T bonded with the adhesive G. However, the treated wafer W, for example, non-bonding surface _{W N} is polished, has been thinned (e.g., thickness 35μm~100μm). Further, the adhesive G as an object to be peeled body adhesive is used that is cured by heat, the adhesive G is solidified into a sheet on the joint surface W _J of the processing target wafer W.

As shown in FIG. 43, the peeling system 600 includes cassettes C _W , C _S , and C _T that can accommodate, for example, a plurality of wafers W to be processed, a plurality of support substrates S, and a plurality of superposed wafers T, respectively. A loading / unloading station 601 for loading / unloading, a processing station 602 including various processing apparatuses for performing predetermined processing on the processing target wafer W, the support substrate S, and the overlapped wafer T, and a post-processing station 603 adjacent to the processing station 602. And an interface station 604 that transfers the wafer W to be processed between the two.

The carry-in / out station 601 and the processing station 602 are arranged side by side in the X direction (vertical direction in FIG. 43). A wafer transfer area 605 is formed between the carry-in / out station 601 and the processing station 602. The interface station 604 is arranged on the Y direction negative direction side (left direction side in FIG. 43) of the processing station 602. An inspection device 606 for inspecting the wafer W to be processed before being transferred to the post-processing station 603 is disposed on the positive side in the X direction of the interface station 604 (upward in FIG. 43). Further, the opposite side of the inspection apparatus 606 across the interface station 604, that is, the negative direction in the X-direction side of the interface station 604 (downward side in FIG. 43), the bonding surface W _J and wafer W after inspection A post-inspection cleaning station 607 for cleaning the non-bonded surface W _N and reversing the front and back surfaces of the wafer W to be processed is disposed.

The loading / unloading station 601 is provided with a cassette mounting table 610. The cassette mounting table 610 is provided with a plurality of, for example, four cassette mounting plates 611. The cassette mounting plates 611 are arranged in a line in the Y direction (left and right direction in FIG. 43). The cassettes C _W , C _S , and C _T can be placed on these cassette mounting plates 611 when the cassettes C _W , C _S , and C _T are carried in and out of the peeling system 600. . As described above, the carry-in / out station 601 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support substrates S, and a plurality of superposed wafers T. The number of cassette mounting plates 611 is not limited to this embodiment, and can be arbitrarily determined. For example, one of the cassettes may be used for collecting defective wafers. In the present embodiment, among the plurality of cassettes C _T, using a one cassette C _T for the recovery of the fault wafer, and using the other cassette C _T for the accommodation of a normal bonded wafer T. The plurality of superposed wafers T carried into the carry-in / out station 601 are inspected in advance, and a superposed wafer T including a normal process target wafer W and a superposed wafer T including a defective process target wafer W. And have been determined.

  A first transfer device 620 is arranged in the wafer transfer region 605. The first transfer device 620 includes a transfer arm that can move around, for example, the vertical direction, the horizontal direction (Y direction, X direction), and the vertical axis. The first transfer device 620 can move in the wafer transfer region 605 and transfer the processing target wafer W, the support substrate S, and the overlapped wafer T between the transfer-in / out station 601 and the processing station 602.

  The processing station 602 has a wafer peeling device 630 as a substrate peeling device for peeling the superposed wafer T from the wafer W to be processed and the support substrate S. On the Y direction negative direction side (left direction side in FIG. 43) of the wafer peeling device 630, a sheet peeling device 40 for peeling the adhesive G solidified in a sheet form from the wafer W to be processed after the peeling is disposed. . This sheet peeling apparatus 40 has the same configuration as the sheet peeling apparatus 40 in the joining system 1 of the above embodiment. A second transfer device 631 is provided between the wafer peeling device 630 and the sheet peeling device 40. Thus, in the processing station 602, the sheet peeling device 40, the second transfer device 631, and the wafer peeling device 630 are arranged in this order from the interface station 604 side.

  The wafer peeling apparatus 630 can have any configuration as long as it peels the overlapped wafer T. For example, the wafer peeling apparatus 630 includes a first holding unit (not shown) that holds the wafer W to be processed by suction on the lower surface and a second holding unit (not shown) that holds and holds the support substrate S on the upper surface. ) And a moving mechanism for moving the first holding part or the second holding part relatively in the horizontal direction. In such a case, at least the first holding unit or the second holding unit is relatively moved in the horizontal direction by the moving mechanism, and the processing target wafer W and the support substrate S are peeled off. Note that the processing target wafer W and the support substrate S may be separated by relatively moving the first holding unit or the second holding unit in the horizontal direction and the vertical direction.

  Alternatively, the wafer peeling apparatus 630 includes a first holding unit (not shown) that holds the wafer W to be processed by suction and a second holding unit (not shown) that holds and holds the support substrate S on the upper surface. 2), a cutting mechanism (not shown) with a sharp tip inserted into the bonding surface of the wafer W to be processed and the support substrate S from the side of the superposed wafer T, and a side of the superposed wafer T. A fluid supply mechanism (not shown) for supplying fluid to the bonding surface between the wafer W to be processed and the support substrate S from the substrate. In such a case, a notch mechanism is inserted from the side of the overlapped wafer T into the bonding surface of the wafer to be processed W and the support substrate S to make a cut, and further, the bonding surface of the wafer to be processed W and the support substrate S is cut. On the other hand, a fluid is supplied from the fluid supply mechanism, and the processing target wafer W and the support substrate S are peeled off.

  The second transfer device 631 has, for example, a Bernoulli chuck (not shown) that holds the wafer W to be processed. The Bernoulli chuck is configured to be rotatable about a horizontal axis and a vertical axis, and to be movable in a horizontal direction and a vertical direction.

In the inspection device 606, the presence or absence of the residue of the adhesive G on the processing target wafer W peeled off by the wafer peeling device 630 is inspected. In the post-inspection cleaning station 607, the wafer W to be processed in which the residue of the adhesive G is confirmed by the inspection device 606 is cleaned. The inspection after cleaning station 607, the bonding surface cleaning apparatus 640 for cleaning the joint surface W _J of wafer W, the non-bonding surface cleaning apparatus 641 for cleaning a non-bonding surface W _N of the wafer W, the wafer W Has a reversing device 642 for reversing the front and back surfaces. The bonded surface cleaning device 640, the reversing device 642, and the non-bonded surface cleaning device 641 are arranged side by side in the Y direction from the post-processing station 603 side.

  The inspection device 606, the bonding surface cleaning device 640, the reversing device 642, and the non-bonding surface cleaning device 641 can have any configuration. For example, the bonding surface cleaning device 640 and the non-bonding surface cleaning device 641 rotate the wafer W to be processed held by a porous chuck (not shown) while cleaning liquid, for example, adhesive G, at the center of the wafer W to be processed. The organic solvent which is the solvent of is supplied. The supplied cleaning liquid diffuses on the processing target wafer W by centrifugal force, and the processing target wafer W is cleaned.

  The interface station 604 is provided with a third transport device 651 that is movable on a transport path 650 extending in the Y direction. The third transfer device 651 is also movable in the vertical direction and around the vertical axis (θ direction), and the wafer to be processed is between the processing station 602, the post-processing station 603, the inspection device 606, and the post-inspection cleaning station 607. W can be conveyed. The third transport device 651 has a configuration similar to that of the second transport device 631 described above.

  In the post-processing station 603, predetermined post-processing is performed on the wafer W to be processed peeled off at the processing station 602. As predetermined post-processing, for example, processing for mounting the processing target wafer W, processing for inspecting electrical characteristics of devices on the processing target wafer W, processing for dicing the processing target wafer W for each chip, and the like are performed.

  The above-described peeling system 600 is also provided with a control unit 410 having the same configuration as the control unit 410 in the bonding system 1 of the above embodiment. However, the control unit 410 stores a program for controlling processing of the processing target wafer W, the supporting substrate S, and the overlapped wafer T in the peeling system 600.

  Next, the peeling processing method of the to-be-processed wafer W and the support substrate S performed using the peeling system 600 configured as described above will be described. FIG. 44 is a flowchart showing an example of main steps of the peeling process.

First, a cassette C _T accommodating a plurality of bonded wafer _T, an empty cassette C _W, and an empty cassette C _S is placed on the predetermined cassette mounting plate 611 of the loading and unloading station 601. The superposed wafer _T in the cassette CT is taken out by the first transfer device 620 and transferred to the wafer peeling device 630 in the processing station 602.

  In the wafer peeling apparatus 630, as described above, the superposed wafer T is peeled off from the processing target wafer W and the support substrate S (step B1 in FIG. 44). At this time, the adhesive G is solidified in a sheet shape, remains on the processing target wafer W, and does not adhere to the support substrate S. Thus, since the adhesive G does not remain on the support substrate S, the support substrate S is transported to the loading / unloading station 601 by the first transport device 620 without cleaning. Thereafter, the support substrate S is unloaded from the loading / unloading station 601 and collected (step B2 in FIG. 44).

  On the other hand, the processing target wafer W peeled by the wafer peeling device 630 is transferred to the sheet peeling device 40 by the second transfer device 631. In the sheet peeling apparatus 40, the adhesive G is peeled from the wafer W to be processed in the peeling region E1 (step B3 in FIG. 44), and the adhesive G peeled in the discarding region E2 is discarded (step B4 in FIG. 44). ). In this step B3, since the adhesive G is solidified into a sheet shape, the adhesive G is peeled off from the wafer to be processed W as an integral part without being cut during peeling. For this reason, the adhesive G does not remain on the wafer W to be processed after peeling.

  The adhesive G has a sheet shape similar to the protective sheet F in the above embodiment, and the peeling of the adhesive G in the process B3 and the disposal of the adhesive G in the process B4 are performed in the process A1 of the above embodiment. Since it is the same as peeling of the protective sheet F and discarding of the protective sheet F in step A2, description thereof is omitted.

  Here, as described above, the plurality of superposed wafers T carried into the carry-in / out station 601 have been inspected in advance, and the superposed wafer T including the normal target wafer W and the defective target wafer W are arranged. The superposed wafer T is discriminated.

A normal processing target wafer W peeled from the normal superposed wafer T is transported to the inspection device 606 by the third transport device 651 after the adhesive G is peeled off in steps B3 and B4. In the inspection apparatus 606, the presence or absence of adhesive residue G at the joint surface W _J of wafer W is inspected (Step B5 in FIG. 44).

When the residue of the adhesive G is confirmed in the inspection device 606, the wafer W to be processed is transferred to the bonding surface cleaning device 640 of the post-inspection cleaning station 607 by the third transfer device 651, and the bonding surface is cleaned by the bonding surface cleaning device 640. W _J is cleaned (step B6 in FIG. 44). Incidentally, the adhesive G in step B3, B4 as described above is peeled off from the wafer W, on the bonding surface W _J of the wafer W should the adhesive G does not remain. For this reason, when it is confirmed in the inspection apparatus 606 that there is no residue of the adhesive G, the process B6 may be omitted.

  Thereafter, the wafer W to be processed is transferred to the reversing device 642 by the third transfer device 651, and the reversing device 642 reverses the front and back surfaces, i.e., vertically reversed (step B7 in FIG. 44).

Thereafter, the wafer W to be processed is transferred again to the inspection apparatus 606 by the third transfer apparatus 651. In the inspection apparatus 606, the inspection of the non-bonding surface _{W N} of the wafer W is carried out (step B8 in Fig. 44). When the residue of the adhesive G is confirmed in the non-bonding surface W _N, wafer W is transferred to the non-bonding surface cleaning apparatus 641 by the third transfer unit 651, the cleaning of the non-bonding surface W _N rows (Step B9 in FIG. 44). In addition, when it is confirmed in the inspection apparatus 606 that there is no residue of the adhesive G, the process B9 may be omitted.

  Thereafter, the wafer W to be processed is transferred to the post-processing station 603 by the third transfer device 651. In the post-processing station 603, predetermined post-processing is performed on the processing target wafer W (step B10 in FIG. 44). Thus, the processing target wafer W is commercialized.

  On the other hand, the wafer to be processed W having a defect peeled from the defective overlapped wafer T is transferred to the carry-in / out station 601 by the first transfer device 620 after the adhesive G is peeled off in steps B3 and B4. . Thereafter, the defective wafer W to be processed is unloaded from the loading / unloading station 601 and collected (step B11 in FIG. 44). In this way, a series of separation processing of the processing target wafer W and the support substrate S is completed.

  Also in this embodiment, the same effect as that of the above embodiment can be enjoyed. That is, in the process B3, the sheet-like adhesive G can be smoothly peeled from the processing target wafer W. Then, since the adhesive G does not remain on the wafer to be processed W after peeling, it is not necessary to clean the wafer to be processed W. Therefore, it is possible to improve the throughput of the entire peeling process between the processing target wafer W and the support substrate S.

  Further, since the peeling system 600 includes the wafer peeling device 630 and the sheet peeling device 40, the adhesive on the wafer W to be processed from the peeling of the wafer W to be processed and the support substrate S in the one peeling system 600. A series of peeling processes up to peeling of G can be performed efficiently.

  Furthermore, in this series of processes, the process from the separation of the processing target wafer W and the support substrate S to the post-processing of the processing target wafer W can be performed, so that the throughput of the wafer processing can be further improved.

  Depending on the type of the adhesive G, the adhesive G may remain on the wafer to be processed W and the support substrate S after peeling, and in such a case, a cleaning apparatus for cleaning the wafer to be processed W in the processing station 602. In addition, a cleaning device for cleaning the support substrate S may be separately provided.

  In the above embodiment, the case where the adhesive G is peeled from the wafer W to be processed in the steps B3 and B4 has been described. However, after the wafer W and the support substrate S are peeled off in the step B1, the adhesive G is peeled off. In some cases, it does not adhere to the processing wafer W and remains on the support substrate S. Even in such a case, the adhesive G may be peeled from the support substrate S in the sheet peeling apparatus 40.

  In the above embodiment, the case where the wafer to be processed W is used as the substrate to be processed has been described. However, for example, another substrate such as a glass substrate may be used. For example, a glass substrate as a substrate to be processed is also a product substrate, and a device including an electronic circuit is formed on the bonding surface. Moreover, although the above embodiment demonstrated the case where a glass substrate was used as a support substrate, as mentioned above, you may use other board | substrates, such as a wafer.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

DESCRIPTION OF SYMBOLS 1 Joining system 2 Carrying in / out station 3 Processing station 30-33 Joining apparatus 40 Sheet peeling apparatus 41-46 Heat processing apparatus 60 Wafer conveyance area 270 Processing container 290 Wafer holding part 300 Moving mechanism 302 Lifting mechanism 310 Sheet holding part 311 Holding member 312 Holding Location 320 Horizontally moving member 322 Elastic member 410 Control unit 500 Holding member 510 Holding member 512 Adsorption sheet 600 Peeling system 601 Loading / unloading station 602 Processing station 605 Wafer transfer area 630 Wafer peeling apparatus E1 Peeling area E2 Waste area F Protective sheet G Adhesive S Support substrate T Superposition wafer W Processed wafer

Claims (21)

In joining or peeling substrates, a sheet peeling device for peeling a sheet-like object to be peeled temporarily provided on one substrate,
A substrate holding unit for holding the one substrate;
A sheet holding portion for holding an outer peripheral portion of the object to be peeled;
Movement that relatively moves the substrate holding part and the sheet holding part so that the object to be peeled peels from the one substrate with the outer peripheral part of the object to be peeled held by the sheet holding part as a base point and the mechanism, the possess,
It is divided into a peeling area for peeling the object to be peeled from the one substrate, and a disposal area for discarding the peeled object peeled in the peeling area,
The substrate holding part and the moving mechanism are provided in the peeling region,
The sheet holding unit is configured to be movable between the peeling region and the discarding region,
The peeling area and the disposal area are configured to be able to seal the inside of each,
The sheet peeling apparatus according to claim 1, wherein the atmosphere in the peeling region is maintained at a positive pressure with respect to the atmosphere in the discarding region . The sheet peeling apparatus according to claim 1, wherein the sheet holding portion holds a plurality of locations on an outer peripheral portion of the object to be peeled. The substrate holding part and the sheet holding part are arranged to face each other in the vertical direction,
The sheet peeling apparatus according to claim 1, wherein the moving mechanism includes an elevating mechanism that elevates and lowers the substrate holding unit in a vertical direction. The sheet holding portion includes a holding member that holds an outer peripheral portion of the object to be peeled, and a horizontal movement member that supports the holding member and moves the holding member in a horizontal direction.
The sheet peeling apparatus according to claim 3, wherein the holding member is configured to be rotatable around a portion supported by the horizontal movement member. The sheet peeling apparatus according to claim 1, wherein the sheet holding unit sucks and holds an outer peripheral portion of the object to be peeled. The sheet peeling apparatus according to any one of claims 1 to 4, wherein the sheet holding part mechanically holds an outer peripheral part of the object to be peeled. The sheet holding unit has an adsorbing sheet that adsorbs the outer periphery of the object to be peeled,
5. The sheet peeling apparatus according to claim 1, wherein the adsorbing sheet adsorbs an outer peripheral portion of the object to be peeled with an adhesive. The sheet holding unit has an adsorbing sheet that adsorbs the outer periphery of the object to be peeled,
5. The sheet peeling apparatus according to claim 1, wherein the suction sheet sucks an outer peripheral portion of the object to be peeled by applying heat. The sheet holding unit has an adsorbing sheet that adsorbs the outer periphery of the object to be peeled,
The sheet peeling device according to any one of claims 1 to 4, wherein the suction sheet is given an ultrasonic wave to suck the outer peripheral portion of the object to be peeled. The said to-be-separated body is a protective sheet which protects the said adhesive agent provided in the surface of the said one board | substrate when joining board | substrates via an adhesive agent, The said 1 to 9 characterized by the above-mentioned. The sheet peeling apparatus in any one. The object to be peeled body, when the substrate to each other to peel off the polymer substrate bonded with an adhesive, characterized in that said adhesive is provided on a surface of the one substrate, any claim 1-9 A sheet peeling apparatus according to claim 1. A joining system comprising the sheet peeling apparatus according to claim 10 ,
The sheet peeling device, a heat treatment device that heats the one substrate from which the protective sheet has been peeled by the sheet peeling device to a predetermined temperature, a joining device that joins the substrates together via the adhesive, and the sheet A processing station having a transfer region for transferring a substrate or a superposed substrate in which the substrates are bonded to each other with respect to the peeling device, the heat treatment device, and the bonding device,
A bonding system comprising: a loading / unloading station for loading / unloading a substrate or a superposed substrate to / from the processing station. A peeling system comprising the sheet peeling apparatus according to claim 11 ,
A processing station comprising a substrate peeling device for peeling the superposed substrate, and the sheet peeling device for peeling the adhesive on the one substrate peeled by the substrate peeling device;
A loading / unloading station for loading / unloading a substrate or a superposed substrate with respect to the processing station;
A peeling system comprising: a transfer area for transferring a substrate or a superposed substrate between the processing station and the carry-in / out station. In joining or peeling substrates, a sheet peeling method for peeling a sheet-like object to be peeled temporarily provided on one substrate using a sheet peeling device,
The sheet peeling apparatus is partitioned into a peeling area for peeling the object to be peeled from the one substrate, and a disposal area for discarding the peeled object peeled in the peeling area,
The peeling area and the disposal area are configured to be able to seal the inside of each,
The atmosphere in the peeling region is maintained at a positive pressure with respect to the atmosphere in the waste region,
In the peeling area, and holding the first substrate by the substrate holder, the outer peripheral portion of the object to be peeled body on said one of the substrate held by the substrate holding portion held by the sheet holding section, wherein the moving mechanism Relatively moving the substrate holding part and the sheet holding part, with the outer peripheral part of the object to be peeled held by the sheet holding part as a base point, the peeled object is peeled from the one substrate ,
Thereafter, the sheet holding unit holding the peeled object to be peeled is moved to the discard area, and the peeled object is discarded in the discard area . The sheet peeling method according to claim 14 , wherein the sheet holding portion holds a plurality of locations on an outer peripheral portion of the object to be peeled. The substrate holding part and the sheet holding part are arranged to face each other in the vertical direction,
The moving mechanism has an elevating mechanism that elevates and lowers the substrate holding unit in a vertical direction,
Wherein upon the release of the object to be peeled body from the one substrate, by the lifting mechanism, characterized in that moving the substrate holding portion away from said sheet holding unit in the vertical direction, according to claim 14 or 15 Sheet peeling method. The sheet holding portion includes a holding member that holds an outer peripheral portion of the object to be peeled, and a horizontal movement member that supports the holding member and moves the holding member in a horizontal direction.
When the substrate holding unit is moved in the vertical direction by the lifting mechanism, the holding member is moved in the horizontal direction by the horizontal moving member, and the holding member is rotated around a place supported by the horizontal moving member. The sheet peeling method according to claim 16 , wherein the object to be peeled is peeled off from an outer peripheral portion of the one substrate. The object to be peeled body, upon joining the substrates to each other through an adhesive, characterized in that it is a protective sheet for protecting the adhesive provided on the surface of the one substrate, according to claim 14-17 The sheet peeling method according to any one of the above. The object to be peeled body, when the substrate to each other to peel off the polymer substrate bonded with an adhesive, characterized in that said adhesive is provided on a surface of the one substrate, any claim 14-17 The sheet | seat peeling method of crab. A program that operates on a computer of a control unit that controls the sheet peeling apparatus in order to cause the sheet peeling apparatus to execute the sheet peeling method according to any one of claims 14 to 19 . A readable computer storage medium storing the program according to claim 20 .

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