TW201833358A - Film formation apparatus - Google Patents

Abstract

A film formation apparatus includes a carrying unit circulating and carrying an electronic component in a chamber, a film formation processing unit forming a film on the electronic component, a tray carried by the carrying unit, and including a mount surface, and a mount member which is mounted on the mount surface, and on which the electronic component is placed. The mount member includes a holding sheet having an adhesive surface, and a non-adhesive surface, and a sticking sheet having a first sticking surface with adhesiveness sticking to the non-adhesive surface, and a second sticking surface with adhesiveness sticking to the mount surface of the tray. The adhesive surface includes a pasting region for pasting the electronic components. The first sticking surface sticks across an entire region of the non-adhesive surface corresponding to at least the pasting region.

Description

Film forming device

The present invention relates to a film forming apparatus.

Wireless communication devices such as mobile phones are equipped with many semiconductor devices as electronic components. In order to prevent the influence on communication characteristics, the semiconductor device seeks to suppress the influence of electromagnetic waves, such as leakage of electromagnetic waves to the outside, on the inside and outside. Therefore, a semiconductor device having a shielding function against electromagnetic waves has been used.

Generally, a semiconductor substrate is formed by mounting a semiconductor wafer on an interposer substrate which is a substrate for transferring a mounting substrate, and sealing the semiconductor wafer with a resin. A semiconductor device has been developed in which a shielding function is provided by providing a conductive electromagnetic wave shielding film on the upper surface and side surfaces of the sealing resin (see Patent Document 1).

Such an electromagnetic wave shielding film can be a laminated film of a plurality of metal materials. For example, an electromagnetic wave shielding film having a multilayer structure in which a Cu film is formed on a stainless steel (SUS) film and a SUS film is formed thereon is known.

Regarding the electromagnetic wave shielding film, in order to obtain a sufficient shielding effect, it is necessary to reduce the resistivity. Therefore, a certain thickness is required for the electromagnetic wave shielding film. Regarding semiconductor devices, generally, if the film thickness is about 1 μm to 10 μm, good shielding characteristics can be obtained. It is known that the electromagnetic wave shielding film of the laminated structure of the SUS, Cu, and SUS has a good shielding effect if the film thickness is about 1 μm to 5 μm. [Prior Art Literature]

[Patent Literature] [Patent Literature 1] International Publication No. 2013/035819

[Problems to be Solved by the Invention] As a method for forming an electromagnetic wave shielding film, a plating method is known. However, the plating method requires a wet process such as a pre-treatment step, a plating treatment step, and a post-treatment step such as water washing, and therefore, an increase in the manufacturing cost of the semiconductor device is unavoidable.

Therefore, a sputtering method as a dry step has attracted attention. As a film forming apparatus using a sputtering method, a plasma processing apparatus for forming a film using a plasma has been proposed. The plasma processing apparatus introduces an inert gas into a vacuum container provided with a target, and applies a DC voltage. The ions of the plasma-formed inert gas collide with the target of the film-forming material, and the material ejected from the target is deposited on the workpiece to form a film.

A general plasma processing apparatus is used to form a film having a thickness of 10 nm to several 100 nm that can be formed within a processing time of several tens of seconds to several minutes. However, as described above, it is necessary to form a film having a thickness of a micrometer as the electromagnetic wave shielding film. Since the sputtering method is a technology of depositing particles of a film-forming material on a film-forming object, the thicker the film formed, the longer it takes to form the film.

Therefore, in order to form an electromagnetic wave shielding film, a processing time of several tens of minutes to about one hour is longer than that of a general sputtering method. For example, in the case of an electromagnetic wave shielding film having a laminated structure of SUS, Cu, and SUS, in order to obtain a film thickness of 5 μm, a processing time of more than one hour may be required.

In this way, in the sputtering method using a plasma, the package, which is an outer package of the semiconductor device, is always exposed to the heat of the plasma within the processing time. As a result, the package may be heated to about 200 ° C. until a film having a thickness of 5 μm is obtained.

On the other hand, the heat-resistant temperature of the package is about 200 ° C. when it is temporarily heated for several seconds to several tens of seconds, but when it is heated for more than a few minutes, it is generally about 150 ° C. Therefore, it is difficult to form a micron-level electromagnetic wave shielding film using a general plasma sputtering method.

In order to cope with this situation, it is considered that a cooling device for suppressing a temperature rise of the semiconductor package is provided in the plasma processing apparatus. In this case, the device configuration is complicated and enlarged.

An object of the present invention is to provide a film forming apparatus that can be easily configured to suppress heating of electronic components. [Technical means to solve the problem]

In order to achieve the object, the present invention is characterized in that it includes a chamber, which is a container for introducing a sputtering gas, and a film forming processing unit, which is disposed in the chamber and has a film deposition material deposited by sputtering. A sputtering source for forming a film, and forming a film on an electronic component by the sputtering source; a tray provided in a processing area of the film forming processing section, having a mounting surface; and a mounting section, placed on The mounting surface is used to mount the electronic component, and the mounting portion includes a holding sheet having one side having an adhesive surface with adhesive properties and the other side having a non-adhesive surface having no adhesive properties; The first adhesive surface with adhesiveness is in close contact with the non-adhesive surface, and the second adhesive surface with adhesiveness is in close contact with the mounting surface of the tray, and the adhesive surface is provided with the adhesive surface. The first adhesion surface of the electronic component is in close contact with at least the entire area of the non-adhesion surface corresponding to the adhesion area.

In addition, the present invention is characterized in that it includes a chamber that is a container for introducing a sputtering gas, a transfer section disposed in the chamber to circulate electronic components, and a film forming processing section that is formed by sputtering. The film material is deposited on a sputtering source for forming a film by the electronic parts cyclically conveyed by the conveying section, and a film is formed on the electronic part by the sputtering source; a tray is conveyed by the conveying section, and has A mounting surface; and a mounting portion mounted on the mounting surface for mounting the electronic component, the mounting portion includes: a holding sheet, one side having an adhesive surface having adhesiveness, and the other surface having no An adhesive non-adhesive surface; and an adhesive sheet, one side of which has a first adhesive surface with adhesiveness which is in close contact with the non-adhesive surface, and the other side with an adhesive second adhesive surface which is in close contact with the mounting surface of the tray Surface, the adhesive surface has an attaching area for attaching the electronic component, and the first adhesion surface is in close contact with at least the entire area of the non-adhesive surface corresponding to the attaching area.

A metal frame that defines a part or all of the outer edge of the application region is adhered to the adhesive surface of the holding sheet, and the first adhesion surface is a non-adhesive surface corresponding to the application region. In addition to the entire region, it can be further in close contact with the region of the non-adhesive surface corresponding to the frame.

When the adhesion force between the first adhesion surface and the non-adhesion surface is set to Fa, and the adhesion force between the second adhesion surface and the placement surface is set to Fb, Fa <Fb may be satisfied.

The contact sheet may be formed of a material having a peel resistance of the first contact surface from the non-adhesive surface that is smaller than a peel resistance of the second contact surface from the placement surface.

The thermal conductivity of the adhesive sheet may be 0.1 W / (m × K) or more.

[Effects of the Invention] According to the present invention, it is possible to provide a film forming apparatus capable of suppressing heating of an electronic component with a simple configuration.

An embodiment (hereinafter, referred to as the present embodiment) of the present invention will be specifically described with reference to the drawings.

[Electronic Component] As shown in FIG. 1, the electronic component 10 to be a film formation target of the present embodiment includes a package 12 that seals the element 11. The component 11 is a surface-mounted component such as a semiconductor wafer, a diode, a transistor, a capacitor, and a surface acoustic wave (Surface Acoustic Wave, SAW) filter. In the following description, a semiconductor wafer will be described as an example of the element 11. The semiconductor wafer described herein is configured as an integrated circuit in which a plurality of electronic components are integrated.

The element 11 is mounted on the surface of the substrate 14. The substrate 14 has a circuit pattern formed on a surface of a plate including ceramic, glass, epoxy, or the like. The element 11 and the circuit pattern are connected by solder.

The surface of the substrate 14 on which the element 11 is mounted is sealed with a synthetic resin so as to cover the element 11, thereby constituting the package 12. The shape of the package body 12 is a substantially rectangular parallelepiped shape.

In this embodiment, the electromagnetic wave shielding film 13 is formed on the top surface 12 a and the side surface 12 b of the electronic component 10 as described above. The electromagnetic wave shielding film 13 is a film that shields electromagnetic waves and is formed of a conductive material. In order to obtain a shielding effect, the electromagnetic wave shielding film 13 may be formed on at least the top surface 12 a of the package 12. The reason is that the electromagnetic wave shielding film 13 on the side surface 12b is grounded. The top surface 12a of the package 12 is an outer surface on the side opposite to the surface mounted on the product.

In the case of horizontal placement, the top surface 12a becomes the upper surface located at the highest position. However, there may be cases where the top surface 12a faces upward or not when it is mounted. The side surface 12b is an outer peripheral surface formed at a different angle from the top surface 12a. An angle may be formed between the top surface 12a and the side surface 12b, or it may be continuous by a curved surface.

[Film Forming Apparatus] A film forming apparatus 100 according to this embodiment will be described with reference to FIGS. 2 to 7. The film forming apparatus 100 is a device for forming an electromagnetic wave shielding film 13 on the outer surface of the package 12 of each electronic component 10 by sputtering. As shown in FIG. 2, the film forming apparatus 100 is a device in which, when the turntable 31 rotates, the electronic components 10 on the tray 34 held by the holding portion 33 move along a circular trajectory, and are opposed to the sputtering source 4 after passing through. At the position, particles sputtered from the target 41 (see FIG. 3) are adhered to form a film.

As shown in FIGS. 2 and 3, the film forming apparatus 100 includes a chamber 20, a conveying section 30, a film forming processing section 40A, a film forming processing section 40B, a surface processing section 50, a load lock section 60, and a control device 70.

[Cabin] The chamber 20 is a container into which the reaction gas G is introduced. The reaction gas G includes a sputtering gas G1 for sputtering, and a process gas G2 for various processes (see FIG. 4). In the following description, the sputtering gas G1 and the process gas G2 are sometimes referred to as a reaction gas G without distinguishing them. The sputtering gas G1 is a gas for sputtering the package 12 of the electronic component 10 by using a plasma generated by applying electric power to collide the generated ions and the like with the target 41. For example, an inert gas such as argon can be used as the sputtering gas G1.

The process gas G2 is a gas used for surface treatment by etching or ashing. Hereinafter, such a surface treatment is sometimes referred to as reverse sputtering. The process gas G2 can be appropriately changed according to the purpose of processing. For example, when etching is performed, an inert gas such as argon can be used as the etching gas. In this embodiment, the surface of the electronic component 10 is cleaned and roughened by argon. For example, the adhesion of the film can be improved by cleaning the surface and performing a roughening treatment at the nanometer level.

The internal space of the chamber 20 forms a vacuum chamber 21. The vacuum chamber 21 is a space that is air-tight and can be evacuated by reducing the pressure. For example, as shown in FIGS. 2 and 4, the vacuum chamber 21 is a cylindrically-shaped closed space formed by the top plate 20 a, the inner bottom surface 20 b, and the inner peripheral surface 20 b inside the chamber 20.

As shown in FIG. 4, the chamber 20 includes an exhaust port 22 and an introduction port 24. The exhaust port 22 is an opening for exhausting E by ensuring a gas flow between the vacuum chamber 21 and the outside. The exhaust port 22 is formed at the bottom of the chamber 20, for example. An exhaust portion 23 is connected to the exhaust port 22. The exhaust unit 23 includes a pipe, a pump, a valve, and the like (not shown). The inside of the vacuum chamber 21 is decompressed by the exhaust treatment by the exhaust portion 23.

The introduction port 24 is an opening for introducing the sputtering gas G1 into the vicinity of the target 41 of the vacuum chamber 21. A gas supply unit 25 is connected to the introduction port 24. One gas supply unit 25 is provided for each target 41. In addition to piping, the gas supply unit 25 includes a gas supply source of a reaction gas G (not shown), a pump, a valve, and the like. The sputtering gas G1 is introduced into the vacuum chamber 21 from the introduction port 24 by the gas supply unit 25. In addition, as will be described later, an opening 21 a into which the surface treatment section 50 is inserted is provided in an upper portion of the chamber 20.

[Transfer Unit] The transport unit 30 is provided in the chamber 20 and is a device that transports the electronic components 10 in a circular trajectory. The cyclic conveyance means that the tray 34 on which the electronic components 10 are mounted is moved in a circular orbit. The trajectory in which the tray 34 moves by the conveyance part 30 is called a conveyance path L. The transfer unit 30 includes a turntable 31, a motor 32, and a holding unit 33. The holding unit 33 holds a tray 34 on which the placing unit 35 is mounted.

The turntable 31 is a circular plate. The motor 32 is a driving source that provides a driving force to the rotary table 31 and rotates the center of the circle as an axis. The holding unit 33 is a component that holds a tray 34 to be described later that is carried by the carrying unit 30. On the top surface of the turntable 31, a plurality of holding portions 33 are arranged at positions such as the circumference. For example, the area where each holding portion 33 holds the tray 34 is formed in a direction parallel to a tangent to a circle in the circumferential direction of the turntable 31 and is provided at equal intervals in the circumferential direction. More specifically, the holding portion 33 is a groove, a hole, a protrusion, a jig, a holder, or the like that holds the tray 34. It can be constructed by mechanical chuck and adhesive chuck.

As shown in FIG. 5, the tray 34 is a member having a flat mounting surface 34 a. The mounting surface 34a is a flat surface of a square flat plate. A peripheral wall portion 34b is formed on a peripheral edge portion of the mounting surface 34a. The peripheral wall portion 34b is a frame bulged in a square shape surrounding the mounting surface 34a. The material of the tray 34 is preferably a material having high thermal conductivity, such as metal. In the present embodiment, the material of the tray 34 is stainless steel (SUS). The material of the tray 34 may be, for example, ceramics or resins having good thermal conductivity or a composite material thereof.

The mounting portion 35 is a member for mounting the electronic component 10 on the mounting surface 34 a of the tray 34. The mounting portion 35 includes a holding piece 36, a frame 37, and a contact piece 38. As shown in FIG. 6, the holding sheet 36 is a flat sheet, and one side is provided with an adhesive surface 36 a having adhesiveness. The adhesive surface 36 a extends over the entire surface of one side of the holding sheet 36. The adhesive surface 36 a has an attaching area S for attaching the electronic component 10. In the present embodiment, the holding piece 36 is square, and the attachment area S is a square shape area smaller than the outer edge of the holding piece 36. However, the attachment area S may be the entire surface of the holding sheet 36. The other surface of the holding sheet 36 is a non-adhesive surface 36b having no adhesiveness. The non-adhesive surface 36b can be, for example, a smooth surface.

The frame 37 is attached to the adhesive surface 36 a of the holding piece 36 and defines a part or all of the outer edge of the attachment area S. The material of the frame 37 is preferably a material having high thermal conductivity, such as metal. In the present embodiment, the material of the frame 37 is SUS. In addition, the material of the frame 37 may be, for example, ceramics or resins having good thermal conductivity or a composite material thereof, similarly to the tray 34. The material of the tray 34 may be the same as or different from that of the frame 37. The frame 37 of the present embodiment surrounds the application region S and defines the entire outer edge of the application region S. The frame 37 is a rectangular plate-shaped member, and a rectangular through-hole 37a is formed at the center. The inner edge of the through hole 37a coincides with the outer edge of the attachment area S. The outer shape of the frame 37 corresponds to the outer shape of the holding piece 36.

The adhesive surface 36 a of the holding piece 36 is adhered on the bottom surface of the frame 37 so as to conform to the outer shape of each other and block the bottom surface side of the through hole 37 a. Therefore, the application region S of the adhesive surface 36 a is exposed from the through hole 37 a on the top surface side of the frame 37.

As shown in FIGS. 5 and 6, the plurality of electronic components 10 are adhered and held on the exposed attachment area S in the frame 37. The plurality of electronic components 10 are arranged not only on the top surface 12 a but also on the side surface 12 b so as to form a film, and are arranged in a matrix.

As shown in FIG. 6, the adhesive sheet 38 is a flat sheet and has a first adhesive surface 38 a on one side and a second adhesive surface 38 b on the other side. The first adhesion surface 38 a is an adhesive surface that is in close contact with the non-adhesion surface 36 b of the holding sheet 36. The first contact surface 38a is in contact with at least the entire area of the non-adhesion surface 36b corresponding to the attachment area S. The area of the non-adhesive surface 36b corresponding to the attachment area S refers to an area that becomes the non-adhesive surface 36b immediately behind the attachment area S. The first contact surface 38 a is also in close contact with the region of the non-adhesive surface corresponding to the frame 37. That is, the first contact surface 38 a is in contact with the area that also extends to a region that becomes the non-adhesion surface 36 b immediately behind the frame 37. In this embodiment, the outer dimensions of the frame 37, the holding piece 36, and the contact piece 38 are the same.

The second contact surface 38 b is an adhesive surface that is in close contact with the mounting surface 34 a of the tray 34. In the present embodiment, the frame 37, the holding piece 36, and the close contact piece 38 are all laminated so as to have the same outer shape, and the second close contact surface 38b is in close contact with the tray 34 as a whole.

Here, if the adhesion force between the first adhesion surface 38a and the non-adhesion surface 36b of the holding piece 36 is set to Fa, and the adhesion force between the second adhesion surface 38b and the mounting surface 34a of the tray 34 is set to Fb, then it is Fa. <Fb. In addition, for example, it is preferably set to 2 ≦ (Fb-Fa). Alternatively, the non-adhesive surface 36b of the holding sheet 36 may be formed of a material having a peeling resistance smaller than the peeling resistance of the mounting surface 34a of the tray 34 from the second adhesive surface 38b. For example, it is preferable to set Fa to 0.02 (N / width 25 mm) to 0.03 (N / width 25 mm) and Fb to 4 (N / width 25 mm) to 7 (N / width 25 mm). However, the present invention is not limited to these values. In addition, it is preferable that the contact piece 38 has a thermal conductivity of 0.1 W / (m × K) or more. In addition, the higher the thermal conductivity, the better, but as long as it is about 1 W / (m × K), a good cooling effect can be obtained.

As a material of the holding sheet 36 and the adhesive sheet 38, it is considered to be a synthetic resin having heat resistance. For example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyimide (PI) can be used, but are not limited to these . Regarding the adhesive surface 36a, the first contact surface 38a, and the second contact surface 38b, it is considered that an adhesive is applied to the surface of the sheet, or that the surface is made to be an adhesive surface. As the material of the adhesive or the adhesive surface, for example, various materials having adhesiveness, such as silicone-based, acrylic-based resins, urethane resins, and epoxy resins can be used.

As shown in FIG. 5 and FIG. 6, the plurality of electronic components 10 are attached in a matrix form to the attachment area S of the adhesive surface 36 a of the mounting portion 35. By preparing a plurality of such mounting portions 35 and placing them on the mounting surface 34 a of the tray 34 via the contact sheet 38, the second contact surface 38 b of the contact sheet 38 is brought into close contact with the mounting surface 34 a. However, the placing section 35 may be placed on the tray 34 in a single piece.

In this way, the electronic component 10 is positioned on the turntable 31 by the tray 34, the mounting portion 35, and the contact piece 38 held by the holding portion 33. In addition, in this embodiment, since six holding portions 33 are provided, the six trays 34 are held on the rotary table 31 at intervals of 60 °. However, there may be one or more holding portions 33.

[Film Forming Processing Section] The film forming processing section 40A and the film forming processing section 40B are processing sections for forming a film on the electronic component 10 transported by the transport section 30. Hereinafter, a description will be given in the form of the film forming processing section 40 without distinguishing the plurality of film forming processing sections 40A and 40B. As shown in FIG. 4, the film formation processing section 40 includes a sputtering source 4, a division section 44, and a power supply section 6.

(Sputtering Source) The sputtering source 4 is a supply source of a film-forming material that deposits a film-forming material on the electronic component 10 by sputtering. The sputtering source 4 includes a target 41, a backing plate 42, and an electrode 43. The target 41 is formed of a film-forming material deposited on the electronic component 10 to form a film, and is provided at a position opposite to the conveyance path L. Regarding the target material 41 of this embodiment, as shown in FIG. 3, two target materials 41A and 41B are arranged in a direction orthogonal to the conveying direction, that is, in a radial direction of rotation of the turntable 31. Hereinafter, the target material 41A and the target material 41B are used without being distinguished from each other. The bottom surface side of the target 41 is spaced apart from and faces the electronic component 10 moved by the conveyance unit 30. In addition, the size of the processing area, which is the execution area where the film-forming material can be attached by the two targets 41A and 41B, is larger than the size of the tray 34 in the radial direction of the turntable 31.

As described later, Cu, Ni, Fe, SUS, and the like are used as the film-forming material. However, as long as it is a material formed by sputtering, various materials can be applied. The target 41 has, for example, a cylindrical shape. However, other shapes such as a long column shape and a corner column shape may be used.

The back plate 42 is a member that holds the target 41. The electrode 43 is a conductive member that applies power to the target 41 from the outside of the chamber 20. The sputtering source 4 includes a magnet, a cooling mechanism, and the like as necessary.

(Division Unit) The division unit 44 divides the film formation site M1, the film formation site M2, and the surface treatment process site M3 where the electronic component 10 is formed by the sputtering source 4. Hereinafter, the description will be made in the form of the film formation site M without distinguishing the film formation site M1 and the film formation site M2. As shown in FIG. 3, the dividing section 44 has a square wall plate 44 a and a wall plate 44 b arranged radially from the center of the circumference of the conveyance path L, that is, the rotation center of the turntable 31 of the conveyance section 30. The wall plate 44a and the wall plate 44b are provided on the top plate of the vacuum chamber 21, for example, at a position where the target 41 is sandwiched. A gap through which the electronic component 10 passes is vacated at the lower end of the dividing portion 44 and faces the turntable. The presence of the division portion 44 can suppress the reaction gas G and the film-forming material from diffusing into the vacuum chamber 21.

The film formation site M includes the target 41 of the sputtering source 4 and is a space divided by the dividing section 44. More specifically, as shown in FIG. 3, when viewed in a planar direction, the film forming portion M1, the film forming portion M2, and the processing portion M3 are formed by the wall plate 44 a, the wall plate 44 b of the dividing portion 44, and the inner periphery of the chamber 20. A fan-shaped space surrounded by the surface 20c. The range of the film formation site M1, the film formation site M2, and the processing site M3 in the horizontal direction is a region divided by a pair of wall plates 44a and 44b. In addition, the film forming material is deposited in the form of a film on the electronic component 10 passing through a position facing the target 41 in the film forming site M. The film formation site M is a region where most of the film formation is performed. However, even in a region beyond the film formation site M, there is a leakage of the film forming material from the film formation site M, so that the film is not completely deposited. That is, the processing region where film formation is performed becomes a region slightly wider than the film formation site M.

(Power Supply Unit) The power supply unit 6 is a component that applies power to the target 41. By applying electric power to the target 41 using the power supply unit 6 to plasmatize the sputtering gas G1, a film-forming material can be deposited on the electronic component 10. In the present embodiment, the power supply unit 6 is, for example, a direct current (DC) power supply to which a high voltage is applied. In addition, in the case of a device performing high-frequency sputtering, a radio frequency (RF) power source may be used. The turntable 31 has the same potential as the grounded chamber 20, and a potential difference is generated by applying a high voltage to the target 41 side. Thereby, since the movable turntable 31 is set to a negative potential, the difficulty in connection with the power supply section 6 is avoided.

The plurality of film forming processing sections 40 selectively deposit a film forming material to form a film of a layer including a plurality of film forming materials. In particular, in the present embodiment, a sputtering source 4 corresponding to a different type of film forming material is used, and a film including a plurality of layers of film forming materials is formed by selectively depositing the film forming materials. The so-called sputtering source 4 corresponding to different types of film-forming materials includes the case where all the film-forming processing units 40 have different film-forming materials, and also includes a plurality of film-forming processing units 40 that are common film-forming materials and other This is different. The independent and selective deposition of film-forming materials means that during the time when the film-forming processing section 40 of any film-forming material performs film formation, the film-forming processing sections 40 of other film-forming materials do not perform film formation. In addition, the film-forming processing unit 40 or the film-forming site M during film formation refers to the film-forming processing unit 40 that applies power to the target 41 of the film-forming processing unit 40 and is in a state in which the electronic component 10 can perform film formation. Or film formation site M.

In the present embodiment, two film forming processing sections 40A and 40B are disposed in the conveying direction of the conveying path L with the surface processing section 50 interposed therebetween. The film formation sites M1 and M2 correspond to the two film formation process units 40A and 40B. Among these film forming processing sections 40A and 40B, the film forming material of the film forming processing section 40A is SUS. That is, the sputtering source 4 of the film formation processing unit 40A includes a target 41A and a target 41B including SUS. The film-forming material of the other film-forming processing section 40B is Cu. That is, the sputtering source 4 of the film formation processing unit 40B includes a target 41A and a target 41B containing Cu. In this embodiment, while any one of the film formation processing units 40 performs the film formation processing, the other film formation processing units 40 do not perform the film formation processing.

[Surface Treatment Unit] The surface treatment unit 50 is a treatment unit that performs surface treatment, that is, reverse sputtering, on the electronic component 10 transferred by the transfer unit 30. The surface processing unit 50 is provided at a processing site M3 divided by the dividing unit 44. The surface processing unit 50 includes a processing unit 5. A configuration example of the processing unit 5 will be described with reference to FIGS. 3 and 4.

The processing unit 5 includes a cylindrical electrode 51 provided from the upper portion to the inside of the chamber 20. The cylindrical electrode 51 has a rectangular tube shape, has an opening portion 51a at one end, and is closed at the other end. The cylindrical electrode 51 is attached to the opening 21 a provided on the top surface of the chamber 20 through the margin member 52 so that one end having the opening portion 51 a faces the turntable 31. The side wall of the cylindrical electrode 51 extends inside the chamber 20.

A flange 51b protruding outward is provided on an end of the cylindrical electrode 51 opposite to the opening portion 51a. The insulating member 52 is fixed between the flange 51 b and the peripheral edge of the opening 21 a of the chamber 20, thereby keeping the inside of the chamber 20 airtight. The insulating member 52 is not limited to a specific material as long as it has an insulating property, and may include, for example, a material such as polytetrafluoroethylene (PTFE).

The opening portion 51 a of the cylindrical electrode 51 is arranged at a position facing the conveyance path L of the turntable 31. The turntable 31 serves as a transfer unit 30 to transfer the tray 34 on which the electronic components 10 are mounted, and passes through a position facing the opening portion 51 a. The size of the opening portion 51 a of the cylindrical electrode 51 is larger than the size of the tray 34 in the radial direction of the turntable 31.

As shown in FIG. 3, when viewed from a planar direction, the cylindrical electrode 51 has a fan shape that is enlarged in diameter from the center side in the radial direction of the turntable 31 toward the outside. The fan shape mentioned here refers to the shape of the part of the fan surface of a fan. The opening portion 51a of the cylindrical electrode 51 is also fan-shaped. Regarding the speed at which the tray 34 on the turntable 31 passes through the position facing the opening portion 51a, in the radial direction of the turntable 31, it becomes slower toward the center side and faster toward the outside. Therefore, if the opening portion 51a is only rectangular or square, the time between the electronic component 10 passing through the position facing the opening portion 51a will be different between the center side and the outside in the radial direction. By increasing the diameter of the opening portion 51a from the center side in the radial direction toward the outside, the time passing through the opening portion 51a can be made constant, and the plasma treatment described later can be performed uniformly. However, if the difference in elapsed time is such that it does not cause problems on the product, it may be rectangular or square.

As described above, the cylindrical electrode 51 penetrates the opening 21 a of the chamber 20, and a part thereof is exposed to the outside of the chamber 20. As shown in FIG. 4, a portion of the cylindrical electrode 51 exposed to the outside of the chamber 20 is covered by a case 53. The space inside the chamber 20 is hermetically held by the casing 53. The portion of the cylindrical electrode 51 that is located inside the chamber 20, that is, the periphery of the side wall is covered with a shield 54.

The shield 54 is a fan-shaped square tube coaxial with the cylindrical electrode 51 and is larger than the cylindrical electrode 51. The shield 54 is connected to the chamber 20. Specifically, the shield 54 is erected from the edge of the opening 21 a of the chamber 20, and an end portion extending toward the inside of the chamber 20 is located at the same height as the opening portion 51 a of the cylindrical electrode 51. Since the shield 54 functions as a cathode in the same manner as the chamber 20, it can be configured with a conductive metal member having a small resistance. The shield 54 may be formed integrally with the cavity 20 or may be attached to the cavity 20 using a fixed metal part or the like.

The shield 54 is provided to cause the plasma to be stably generated in the cylindrical electrode 51. Each side wall of the shield 54 is provided so as to extend substantially parallel to each side wall of the cylindrical electrode 51 with a predetermined gap therebetween. If the gap becomes too large, the capacitance becomes small, or the plasma generated in the cylindrical electrode 51 enters the gap. Therefore, it is desirable that the gap be as small as possible. However, even if the gap becomes too small, the capacitance between the cylindrical electrode 51 and the shield 54 becomes large, which is not preferable. The size of the gap can be appropriately set according to the capacitance required to generate the plasma. In addition, FIG. 4 illustrates only two side wall surfaces of the shield body 54 and the cylindrical electrode 51 extending in the radial direction, but two of the side wall surfaces of the shield body 54 and the cylindrical electrode 51 extending in the circumferential direction. A gap having the same size as the side wall surface in the radial direction may be provided.

A process gas introduction portion 55 is connected to the cylindrical electrode 51. In addition to piping, the process gas introduction unit 55 includes a gas supply source, a pump, a valve, and the like of a process gas G2 (not shown). The process gas G2 is introduced into the cylindrical electrode 51 by the process gas introduction part 55. As described above, the process gas G2 can be appropriately changed according to the purpose of processing.

An RF power source 56 for applying a high-frequency voltage is connected to the cylindrical electrode 51. An integration box 57 as an integrated circuit is connected in series to the output side of the RF power source 56. An RF power source 56 is also connected to the chamber 20. When a voltage is applied from the RF power source 56, the cylindrical electrode 51 functions as an anode, and the chamber 20, the shield 54, and the turntable 31 function as a cathode. The integration box 57 can stabilize the discharge of the plasma by integrating the impedances on the input side and the output side. In addition, the chamber 20 or the turntable 31 is grounded. The shield 54 connected to the chamber 20 is also grounded. Both the RF power source 56 and the process gas introduction portion 55 are connected to the cylindrical electrode 51 through a through hole provided in the case 53.

When the argon self-made process gas introduction part 55 as the process gas G2 is introduced into the cylindrical electrode 51 and a high-frequency voltage is applied to the cylindrical electrode 51 by the RF power source 56, the argon is plasmatized to generate electrons, Ions and free radicals.

(Load Lock Section) The load lock section 60 is a tray 34 on which unprocessed electronic components 10 are mounted from outside through a mounting section 35 by a transport unit (not shown) while maintaining the vacuum of the vacuum chamber 21. The device which carries in the vacuum chamber 21 and carries out the tray 34 on which the processed electronic components 10 are mounted via the mounting portion 35 to the outside of the vacuum chamber 21. Since the well-known structure can be applied to the said load lock part 60, description is abbreviate | omitted.

[Control Device] The control device 70 is a device that controls each part of the film forming apparatus 100. The control device 70 may be constituted by, for example, a dedicated circuit or a computer operating with a predetermined program. That is, regarding the control of the introduction and exhaust of the sputtering chamber G1 and the process gas G2 into the vacuum chamber 21, the control of the power supply section 6, the RF power supply 56, the control of the rotation of the rotary table 31, and the like, the control contents have been programmed. And can be executed by a processing device such as a programmable logic controller (PLC) or a central processing unit (CPU), which can correspond to a variety of film formation styles.

Specific control contents include the initial exhaust pressure of the film forming apparatus 100, the selection of the sputtering source 4, the applied power to the target 41 and the cylindrical electrode 51, the flow rate and type of the sputtering gas G1 and the process gas G2. , Introduction time and exhaust time, film formation time, rotation speed of the motor 32, and the like.

With reference to FIG. 7 which is a virtual functional block diagram, the configuration of the control device 70 for performing the operations of the units in the above-described manner will be described. That is, the control device 70 includes a mechanism control section 71, a power supply control section 72, a storage section 73, a setting section 74, and an input / output control section 75.

The mechanism control section 71 is a processing section that controls drive sources, valves, switches, power supplies, and the like of the exhaust section 23, the gas supply section 25, the process gas introduction section 55, the motor 32 of the conveyance section 30, and the load lock section 60. The power source control unit 72 is a processing unit that controls the power source unit 6 and the RF power source 56.

The control device 70 selectively controls the film-forming processing unit 40 so that the film-forming processing unit of any other film-forming material does not perform film formation while the film-forming processing unit of any film-forming material performs film formation. That is, the power supply control unit 72 does not apply a voltage to the target 41 of the film formation processing unit 40B while a film is formed by applying a voltage to the target 41 of the film formation processing unit 40A. In addition, while a voltage is applied to the target 41 of the film formation processing unit 40B for film formation, no voltage is applied to the target 41 of the film formation processing unit 40A.

The storage unit 73 is a constituent unit that stores information required for control in the present embodiment. The setting unit 74 is a processing unit that sets information input from the outside to the storage unit 73. The input / output control unit 75 is an interface that controls the conversion of signals and the input and output with each unit to be controlled.

Furthermore, an input device 76 and an output device 77 are connected to the control device 70. The input device 76 is used to allow an operator to operate an input unit such as a switch, a touch screen, a keyboard, and a mouse of the film forming apparatus 100 via the control device 70. For example, the selection of the sputtering source 4 for film formation may be inputted through an input unit.

The output device 77 is an output unit such as a display, a lamp, a meter, and the like that is used to confirm that the status of the device is visible to the operator. For example, the film formation site M1, the film formation site M2, the surface treatment process M3, and the site not subjected to film formation or processing corresponding to the sputtering source 4 undergoing film formation may be displayed on the output device differently. 77.

[Operation] Hereinafter, in addition to the above-mentioned FIG. 1 to FIG. 7, FIGS. The operation will be described. In addition, although not shown, the film forming apparatus 100 carries in, conveys, and unloads the tray 34 on which the electronic components 10 are mounted via the mounting section 35 by a transport unit such as a conveyor or a robot arm.

As shown in FIG. 5 and FIG. 8 (a), the electronic components 10 are spaced apart from each other and attached in a matrix pattern to the attachment area S in the frame 37 in the mounting portion 35. The plurality of mounting portions 35 are mounted on the mounting surface 34 a of the tray 34. Thereby, as shown in FIG.8 (b), the 2nd contact surface 38b of the contact piece 38 is in close contact with the mounting surface 34a. In addition, as will be described later, the contact sheet 38 attached to the placement surface 34a, or the contact sheet 38 formed on the placement surface 34a by coating, coating, or processing may be provided on the placement. The contact piece 38 of the surface 34a is a mode for attaching the non-adhesive surface 36b of the holding piece 36 attached to the frame 37. That is, the holding piece 36 is attached to the contact piece 38 and the like provided on the tray 34, and the holding piece 36 and the contact piece 38 are integrated in the process of placing the placement portion 35 on the tray 34 and are also included in the placement portion 35. In the embodiment having the holding piece 36 and the contact piece 38. When the contact sheet 38 is formed on the mounting surface 34a by attachment, coating, coating, processing, or the like, the boundary surface between the contact sheet 38 and the tray 34 becomes the second contact surface 38b.

The plurality of trays 34 are sequentially carried into the chamber 20 by the transfer unit of the load lock unit 60. The turntable 31 sequentially moves the empty holding portion 33 to a loading position where the load lock portion 60 is loaded. The holding unit 33 individually holds the trays 34 carried in by the transfer unit. In this manner, as shown in FIGS. 2 and 3, all of the trays 34 on which the electronic components 10 to be film-formed are mounted on the turntable 31.

The film forming process for the electronic component 10 introduced into the film forming apparatus 100 as described above will be described with reference to FIGS. 3 and 4. In addition, in the following operation, after the surface of the electronic component 10 is cleaned and roughened by the surface processing portion 50, an electromagnetic wave shielding film is formed on the surface of the electronic component 10 by the film forming processing portion 40A and the film forming processing portion 40B. 13 for an example. The electromagnetic wave shielding film 13 is formed by alternately laminating a SUS layer and a Cu layer. The SUS layer formed directly on the electronic component 10 becomes a base for improving the adhesion with the molding resin and Cu. The middle Cu layer is a layer having a function of shielding electromagnetic waves. The uppermost SUS layer is a protective layer against Cu rust and the like.

First, the exhaust portion 23 is decompressed by exhausting the vacuum chamber 21 to form a vacuum. The turntable 31 rotates and reaches a predetermined rotation speed. The electronic component 10 passes through a position facing the opening portion 51 a of the cylindrical electrode 51 in the processing unit 5. In the processing unit 5, the argon self-made process gas introduction part 55 as the process gas G2 is introduced into the cylindrical electrode 51, and a high-frequency voltage is applied to the cylindrical electrode 51 by the RF power source 56. By applying a high-frequency voltage, argon is plasmatized to generate electrons, ions, and radicals. The plasma flows from the opening portion 51 a of the cylindrical electrode 51 as the anode to the turntable 31 as the cathode. The ions in the plasma collide with the surface of the electronic component 10 under the opening 51a, and the surface is cleaned and roughened. After the surface processing time of the surface processing unit 50 has elapsed, the surface processing unit 50 is stopped. That is, the supply of the process gas G2 from the process gas introduction part 55 and the application of the voltage by the RF power source 56 are stopped.

Next, the gas supply section 25 of the film formation processing section 40A supplies the sputtering gas G1 to the periphery of the target 41. In this state, the electronic component 10 held by the holding portion 33 moves on the conveying path L in a circular trajectory, and passes through a position opposite to the sputtering source 4.

Next, only in the film formation processing section 40A, the power supply section 6 applies power to the target 41. Thereby, the sputtering gas G1 is plasma-formed. In the sputtering source 4, ions generated by the plasma collide with the target 41 to emit particles of a film forming material. Therefore, on the surface of the electronic component 10 that has passed through the film formation site M1 of the film formation processing unit 40A, particles of the film formation material are deposited every time the film passes, and a film is formed. Here, a SUS layer is formed. At this time, although the electronic component 10 passes through the film forming portion M2 of the film forming processing portion 40B, the film forming processing portion 40B does not apply power to the target 41, and therefore, the film forming processing is not performed, and the electronic component 10 is not heated. In addition, in the areas other than the film formation site M1 and the film formation site M2, the electronic component 10 is also not heated. In this way, in the unheated area, the electronic component 10 emits heat.

After the film formation time of the film formation processing section 40A has elapsed, the film formation processing section 40A is stopped. That is, the application of power from the power source unit 6 to the target 41 is stopped. The power source section 6 of the film forming processing section 40B applies power to the target 41. Thereby, the sputtering gas G1 is plasma-formed. In the sputtering source 4, ions generated by the plasma collide with the target 41 to emit particles of a film forming material. Therefore, on the surface of the electronic component 10 that has passed through the film formation portion M2 of the film formation processing unit 40B, particles of the film formation material are deposited every time the film passes to generate a film. Here, a Cu layer is formed. The layer becomes a part of the layer of the electromagnetic wave shielding film 13. At this time, although the electronic component 10 passes through the film formation site M1 of the film formation processing unit 40A, the film formation processing unit 40A does not apply power to the target 41, and therefore, no film formation processing is performed, and the electronic component 10 is not heated. In addition, in the areas other than the film formation site M1 and the film formation site M2, the electronic component 10 is also not heated. In this way, in the unheated area, the electronic component 10 emits heat.

After the film-forming processing section 40B has passed, the film-forming processing section 40B is stopped. That is, the application of power from the power source unit 6 to the target 41 is stopped. The power supply unit 6 of the film formation processing unit 40A applies power to the target 41. Thereby, the sputtering gas G1 is plasma-formed. In the sputtering source 4, ions generated by the plasma collide with the target 41 to emit particles of a film forming material. Therefore, on the surface of the electronic component 10 that has passed through the film formation site M1 of the film formation processing unit 40A, particles of the film formation material are deposited every time the film passes, and a film is formed. Here, a SUS layer is formed. At this time, although the electronic component 10 passes through the film forming portion M2 of the film forming processing portion 40B, the film forming processing portion 40B does not apply power to the target 41, and therefore, the film forming processing is not performed, and the electronic component 10 is not heated. In addition, in the areas other than the film formation site M1 and the film formation site M2, the electronic component 10 is also not heated. In this way, in the unheated area, the electronic component 10 emits heat.

After the film formation time of the film formation processing section 40A has elapsed, the film formation processing section 40A is stopped. That is, the application of power from the power source unit 6 to the target 41 is stopped. In this manner, by repeatedly forming the films of the film formation processing section 40A and the film formation processing section 40B, a film in which a SUS film, a Cu film, and a SUS film are laminated is formed. Further, by repeating the same film formation, more than three layers of films can be formed. Thereby, according to the state shown in FIG. 9 (a), as shown in FIG. 9 (b), the electromagnetic wave shielding film 13 is formed on the top and side surfaces of the package 12 of the electronic component 10.

During the film formation process as described above, the rotary table 31 continues to rotate and continuously transports the tray 34 on which the electronic components 10 are mounted. After the film forming process is completed, the tray 34 on which the electronic components 10 are mounted is sequentially positioned on the load lock portion 60 by the rotation of the rotary table 31 and is carried out to the outside by the transfer unit. As shown in FIG. 8 (c), the mounting portion 35 is peeled from the close contact piece 38 by the holding piece 36 and peeled from the tray 34 that is carried out. That is, the contact piece 38 is separated from the mounting portion 35. In this way, the adhesive sheet 38 remaining on the tray 34 can be directly reused. That is, secondly, the non-adhesive surface 36b of the holding sheet 36 on which the electronic component 10 to be processed is brought into close contact with the first contact surface 38a of the contact sheet 38 on the tray 34 to carry the tray 34 into the vacuum chamber 21, Therefore, a film formation process can be performed similarly to the above. Even in this manner, the holding sheet 36 is attached to the contact sheet 38 to form the placing section 35 including the contact sheet 38, and the film forming apparatus 100 having the placing section 35 is configured. In many uses, after the adhesive force of the adhesive sheet 38 is reduced, the adhesive sheet 38 may be peeled from the tray 34 and the mounting portion 35 including the new adhesive sheet 38 may be placed on the tray 34. The number of usable times of the adhesive sheet 38 can be set in advance through experiments or the like. When replacing the adhesive sheet 38, only the adhesive sheet 38 is updated. Regarding the retaining sheet 36 and the frame 37, both of them can be reused, or only one of them can be reused to update the other, or both can be used as new By. In addition, after the holding sheet 36 is peeled off, the adhesive sheet 38 can be peeled from the tray 34 without using the adhesive sheet 38 and can be made disposable. That is, the contact piece 38 remaining on the tray 34 can be peeled off and discarded each time, and the placing portion 35 including the contact piece 38 can be placed on the tray 34.

[Causes for Heating Electronic Parts] As described above, the electronic parts 10 can emit heat in an unheated area. The heat release is performed mainly by transmitting heat to the tray 34 via the mounting portion 35. However, as in the present embodiment, when the contact piece 38 is not provided, the following problems occur.

(1) When the bottom surface of the holding piece 36 of the mounting portion 35 is not tacky, an upper surface of the holding piece 36 of the mounting portion 35 is provided with an adhesive surface 36 a to which the electronic component 10 is attached, but the bottom surface of the holding piece 36 Not sticky. Therefore, if only the mounting part 35 is mounted on the mounting surface 34 a of the tray 34, a gap is generated between the bottom surface of the holding piece 36 and the mounting surface 34 a. That is, since the surface of the holding sheet 36 and the surface of the mounting surface 34 a have fine unevenness, the contact area is about 10% of the entire area. The untouched spaces are vacuum, so there is no heat conduction. Therefore, it is difficult for the heat of the electronic component 10 to be transferred to the tray 34.

(2) When the bottom surface of the holding sheet 36 of the mounting portion 35 has adhesiveness In order to deal with the problem (1) described above, it is considered that the bottom surface of the holding sheet 36 has adhesiveness. In this way, the mounting portion 35 can be brought into close contact with the mounting surface 34 a of the tray 34, and the gap between the bottom surface of the holding piece 36 and the mounting surface 34 a can be greatly reduced, so that the thermal conductivity is improved. However, in this case, after the film formation process, a step of peeling the bottom surface of the holding sheet 36 of the mounting section 35 from the mounting surface 34 a of the tray 34 is required. When the mounting portion 35 is peeled from the mounting surface 34a, it is difficult to uniformly transmit the force to the adhered surface. Therefore, a partial application of the peeling force may cause strain to the frame 37 and the holding piece 36. In this way, if the frame 37 or the holding piece 36 is strained, the flatness of the arrangement surface of the electronic component 10 disappears, or a deviation occurs in the arrangement interval of the electronic component 10, which hinders subsequent steps such as picking up.

In addition, when picking up the electronic component 10 from the holding sheet 36, the pins are peeled off by pushing up from the bottom surface of the holding sheet 36 one by one. Therefore, if the bottom surface has adhesiveness, the adhesive adheres to the pin and the pin contact position 2. The contact area changes, so that it cannot pick up correctly. Further, when the contacting pin is peeled from the holding sheet 36, the holding sheet 36 is stretched while being attached to the pin, and thereafter, if the adhesive force of the adhesive is negative to the tension of the holding sheet 36 and peeled, As a result of being popped off, there is a possibility that the electronic component 10 may be affected by positional displacement or peeling.

[Reasons for Increasing Heat Dissipation of Electronic Components] In the present embodiment, the surface on the opposite side of the adhesive surface 36 a of the holding piece 36 of the mounting portion 35 is a non-adhesive surface 36 b having no adhesiveness. However, the holding piece 36 is brought into close contact with the mounting surface 34 a of the tray 34 via the contact piece 38. Therefore, the heat of the electronic component 10 is transmitted to the tray 34 via the holding sheet 36 and the contact sheet 38. Therefore, heating of the electronic component 10 is suppressed.

In addition, the adhesive force between the first contact surface 38a and the non-adhesive surface 36b is smaller than the adhesive force between the second contact surface 38b and the placement surface 34a. Therefore, when the holding sheet 36 is detached from the tray 34, the holding sheet 36 is easily peeled from the first contact surface 38a in a state where the second contact surface 38b is in close contact with the mounting surface 34a. Therefore, it is difficult for the frame 37 and the holding piece 36 to generate strain. The opposite side of the holding piece 36 from the adhesive surface 36 a is the non-adhesive surface 36 b. Therefore, when the electronic component 10 is picked up, the problem that the holding piece 36 is attached to the pin does not occur.

[Effects] The present embodiment includes: a chamber 20, which is a container for introducing the sputtering gas G1; a transfer unit 30, which is disposed in the chamber 20, circulates and transports the electronic components 10; a film forming processing unit 40, The sputtering source 4 deposits film-forming materials on the electronic parts 10 cyclically transported by the transfer unit 30 to form a sputtering source 4 for film formation, and the sputtering source 4 forms a film on the electronic part 10; the tray 34 is transferred by the transfer unit 30 is conveyed, and has the mounting surface 34a; and the mounting part 35 is mounted on the mounting surface 34a, and is used for mounting the electronic component 10.

The mounting portion 35 includes a holding sheet 36 having one side having an adhesive surface 36a having adhesive properties and the other side having a non-adhesive surface 36b having no adhesive properties; and an adhesive sheet 38 having one side having adhesive properties which are in close contact with the non-adhesive surfaces 36b. The first adhesion surface 38a is provided on the other side, and the second adhesion surface 38b is provided on the other side, which is in contact with the mounting surface 34a of the tray 34. The adhesion surface 36a has an attachment area S for attaching the electronic component 10. The surface 38a is in close contact with at least the entire area of the non-adhesive surface 36b corresponding to the attachment area S.

Therefore, the heat from the electronic component 10 is transmitted to the tray 34 via the holding sheet 36 and the contact sheet 38 to efficiently dissipate heat. Therefore, it is possible to suppress the heating of the electronic component 10 without complicating or increasing the size of the device. In addition, there is no need to use electric power for cooling, and maintenance becomes easy.

A frame 37 that defines a part or all of the outer edge of the attachment area S is attached to the adhesion surface 36 a of the holding piece 36, and the first contact surface 38 a includes the entire area of the non-adhesion surface 36 b corresponding to the attachment area S. In addition, it is in close contact with the region of the non-adhesive surface 36b corresponding to the frame 37.

Therefore, the heat from the frame 37 is also transmitted to the tray 34 via the holding piece 36 and the contact piece 38, so that the heat is efficiently released. The frame 37 is harder than the holding sheet 36. Therefore, when the holding sheet 36 is peeled from the adhesive sheet 38, the attachment region S surrounded by the frame 37 is stable, and the influence on the electronic component 10 can be suppressed. However, the frame 37 is also heated in the same manner as the electronic component 10 during the film forming process. In this embodiment, the frame 37 can also obtain the cooling effect of the contact piece 38.

In addition, if the adhesion force between the first contact surface 38a and the non-adhesion surface 36b is set to Fa, and the adhesion force between the second contact surface 38b and the placement surface 34a is set to Fb, Fa <Fb. More preferably, it is formed of a material whose peel resistance of the first contact surface 38a from the non-adhesive surface 36b is smaller than the peel resistance of the second contact surface 38b from the mounting surface 34a.

Therefore, when the adhesive sheet 38 is separated from the mounting portion 35, the adhesive sheet 38 remains on the tray 34 side, and the holding sheet 36 is easily peeled off. The holding sheet 36 can be peeled from the adhesion sheet 38 with a slight force, and thus deformation of the holding sheet 36 can be suppressed.

The thermal conductivity of the adhesive sheet 38 is 0.1 W / (m × K) or more. This can promote heat generation of the electronic component 10 and prevent heating.

[Test Results] Test results obtained by actually performing the film-forming process operation and measuring the temperature using the film-forming apparatus of the present embodiment and the film-forming apparatus of the comparative example in the order described above will be described below. However, no electronic components are placed on the placement portion. Regarding the temperature, the temperature of the film was taken as the temperature of the electronic component, and the temperature of the holding sheet was measured with a thermocouple. The film formation conditions of each layer of the electromagnetic wave shielding film are shown in Table 1. In addition, Ar bombardment is also called ion bombardment, and is a cleaning and roughening treatment using Ar, which corresponds to the surface treatment. Table 1

(Comparative example) In a comparative example, a PET film was used as a holding sheet, and a film was formed without using an adhesive sheet. The results are shown in FIG. 10. In the test, the temperature was raised to about 50 ° C. by surface treatment, and it was raised to about 80 ° C. in the formation of the SUS of the base layer, and further increased to about 145 ° C. in the formation of Cu. During the subsequent film formation of the protective layer SUS, the temperature dropped to about 110 ° C.

When a general semiconductor package exceeds 150 ° C., the resin constituting the package is easily broken. Therefore, the case of heating to about 145 ° C. near 150 ° C. is not preferable. In particular, if it exceeds 100 ° C., there is a possibility that the film quality is degraded due to the generation of moisture from the holding sheet and the adhesive sheet, the release of gas from the adhesive, and the increase in resistance value. Therefore, in the case of such a film forming apparatus, it is preferable to have a cooling mechanism.

(Examples) In the examples, a PET film was used as a holding sheet, and a PET film was used as an adhesive sheet to form a film. The results are shown in FIG. 11. In the test, in the surface treatment, the rise stayed at about 35 ° C., and only rose to about 40 ° C. in the formation of the SUS of the base layer, and only rose to about 60 ° C. in the formation of Cu. In the subsequent SUS film formation of the protective layer, the temperature dropped to about 50 ° C. As described above, it is found that in the present invention, the temperature rise can be significantly suppressed. In addition, in FIG. 10 and FIG. 11, there is a part where the measured value fluctuates up and down at a fine time interval due to the noise relationship, but the overall tendency does not change.

[Other Embodiments] The present invention is not limited to the above-mentioned embodiments, and includes the following aspects. (1) In the said embodiment, although the holding | maintenance sheet 36 and the contact | adhesive sheet 38 were made flat, it means a flat plate shape, and is not limited to the surface being smooth. Since the adhesive surface 36 a of the holding sheet 36 and the first adhesive surface 38 a and the second adhesive surface 38 b of the adhesive sheet 38 are adhesive surfaces, there are fine irregularities. Furthermore, the first contact surface 38a and the second contact surface 38b of the contact piece 38 may be formed in a shape having a groove. For example, a groove communicating with the outside is formed in one or both of the first contact surface 38a and the second contact surface 38b. The groove is preferably small enough to not hinder the cooling effect. By providing such a groove, there is an effect that, when the holding sheet 36 and the close-contact sheet 38 are bonded together, even if bubbles are formed on the close-contact surface, the air bubbles are easily released from the groove. In addition, in this case, the shape of the contact piece 38 divided by the grooves may be a polygonal shape such as a quadrangle, or a closed curved shape such as a circle or an ellipse. Furthermore, the mounting surface 34a of the tray 34 is not limited to a flat surface. The unevenness | corrugation of the mounting surface 34a and the 2nd contact surface 38b of the contact piece 38 may be previously formed, and the improvement of the thermal conductivity by the expansion of a surface area may be achieved.

(2) As the film-forming material, various materials that can be formed by sputtering can be applied. For example, as the electromagnetic wave shielding film, Al, Ag, Ti, Nb, Pd, Pt, Zr, or the like can be used. Further, as the magnet, Ni, Fe, Cr, Co, or the like can be used. Furthermore, as the adhesion layer of the base, SUS, Ni, Ti, V, Ta, etc. can be used, and as the outermost surface protective layer, SUS, Au, etc. can be used.

(3) The method of the package 12 can be applied, for example, Ball Grid Array (BGA), Land Grid Array (LGA), Small Outline Package (SOP), Quad Flat Package (Quad Flat) Package (QFP), Wafer Level Package (WLP), and all other methods available today or in the future. Even if it is provided as a terminal for electrically connecting the electronic component 10 to the outside, for example, a hemispherical person such as BGA provided on the bottom surface or a planar person such as LGA, a thin plate shape such as SOP or QFP provided on the side may be considered, but All terminals available today or in the future can be applied, and their formation positions are not investigated. In addition, the component 11 sealed inside the electronic component 10 may be a single or a plurality of components 11.

(4) The number of targets at the film formation site is not limited to two. One target may be used, or three or more targets may be used. The number of film-forming sites may be two or less, or four or more.

(5) The number of trays and electronic parts to be simultaneously conveyed by the conveying section and the number of holding sections that hold the same may be at least one, and is not limited to the number exemplified in the embodiment. That is, it may be a method in which film formation is repeatedly performed for one electronic component cycle, or a method in which film formation is repeatedly performed for two or more electronic component cycles.

(6) Cleaning or surface treatment by etching or ashing can also be performed in a chamber independent of a chamber having a film formation site. In addition, in the case of performing an oxidation treatment or a post-oxidation treatment, oxygen may be used as the process gas G2. In the case of nitriding, nitrogen may be used as the process gas G2.

(7) In the embodiment described above, it is assumed that the rotary table 31 rotates in a horizontal plane. However, the orientation of the rotating surface of the conveyance part is not limited to a specific direction. For example, it may be a rotating surface that rotates in a vertical plane. Furthermore, the transfer unit included in the transfer unit is not limited to a turntable. For example, a cylindrical member having a holding portion that holds a workpiece may be a rotating body that rotates around an axis. The trajectory of the cyclic conveyance is not limited to the circumference. A wide range of methods include cyclic conveyance using endless conveying paths. For example, it can be a rectangle or an ellipse, and it can also include a buckled or curved path. The conveyance path may be configured by, for example, a conveyor.

Furthermore, the present invention is a film forming apparatus 100 including a chamber 20, which is a container for introducing a sputtering gas G1, and a film forming processing unit 40, which is provided in the chamber 20 and has A sputtering source 4 that deposits film-forming materials by sputtering to form a film, and forms a film on the electronic component 10 by the sputtering source 4; a tray 34 is provided in a processing area of the film-forming processing unit 40 and has a placement The surface 34a; and the mounting portion 35 are placed on the mounting surface 34a for mounting the electronic component 10, and only need to have the mounting portion 35 as described above. Therefore, it may be a film forming apparatus that performs film formation in a stationary state without circulating the electronic components 10. The tray 34 on which the electronic components 10 are mounted via the mounting portion 35 may be carried in and installed in the processing area without performing a change in the relative position with respect to the target 41 and performing sputtering.

(8) In the above-mentioned embodiment, it is assumed that the film-forming material is independently and selectively deposited for film formation. However, the present invention is not limited to this, as long as a film including a plurality of layers of film-forming materials can be formed by selectively depositing film-forming materials. Therefore, two or more film-forming materials may be deposited simultaneously. For example, an electromagnetic wave shielding film may be formed using an alloy of Co, Zr, or Nb. In this case, among a plurality of film-forming processing sections, a film-forming processing section using Co as a film-forming material, a film-forming processing section using Zr as a film-forming material, and a film-forming device using Nb as a film-forming material may be selected simultaneously. The processing unit performs film formation.

In addition, in such a case, among the circular trajectories, the trajectories passing through portions other than the film formation sites during film formation may be longer than the trajectories passing through the film formation sites among these film formations. The film formation processing section of the film, or an arrangement of a division section that divides the film formation processing section is set.

That is, in the case where a plurality of one or more film-forming processing units are selected for film formation, or a single film-forming processing unit is selected for film formation, the film formation during film formation can be performed in a circular trajectory. The trajectory of the portion other than the portion is longer than the trajectory of the portion formed during film formation, and a film formation processing section for film formation or a configuration of a division section that divides the film formation processing section is selected.

(9) The embodiment of the present invention and the modification examples of the respective parts have been described above, but the embodiment or the modification examples of the respective parts are proposed as examples only, and are not intended to limit the scope of the invention. The novel embodiments described above can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope or spirit of the invention, and are included in the invention described in the patent application scope.

10‧‧‧Electronic parts

11‧‧‧ Components

12‧‧‧ Package

12a‧‧‧Top

12b‧‧‧ side

13‧‧‧Electromagnetic wave shielding film

14‧‧‧ substrate

100‧‧‧film forming device

20‧‧‧ chamber

20a‧‧‧Top plate

20b‧‧‧Inner bottom

20c‧‧‧Inner peripheral surface

21‧‧‧vacuum chamber

21a‧‧‧ opening

22‧‧‧ exhaust port

23‧‧‧Exhaust

24‧‧‧ entrance

25‧‧‧Gas Supply Department

30‧‧‧Transportation Department

31‧‧‧Turntable

32‧‧‧ Motor

33‧‧‧holding department

34‧‧‧Tray

34a‧‧‧mounting surface

34b‧‧‧Zhoubi

35‧‧‧mounting section

36‧‧‧ Retention

36a‧‧‧ Adhesive surface

36b‧‧‧Non-adhesive surface

37‧‧‧Frame

37a‧‧‧through hole

38‧‧‧Seal

38a‧‧‧The first close contact surface

38b‧‧‧Second contact surface

40, 40A, 40B ‧‧‧Film forming treatment

4‧‧‧Sputter source

41, 41A, 41B‧‧‧ Targets

42‧‧‧back

43‧‧‧electrode

44‧‧‧Division

44a, 44b‧‧‧Siding

5‧‧‧ processing unit

50‧‧‧Surface treatment department

51‧‧‧ cylindrical electrode

51a‧‧‧ opening

51b‧‧‧ flange

52‧‧‧Insulating members

53‧‧‧Shell

54‧‧‧shield

55‧‧‧Process gas introduction department

56‧‧‧RF Power

57‧‧‧Integration Box

6‧‧‧Power Supply Department

60‧‧‧Load lock

70‧‧‧control device

71‧‧‧Institutional Control Department

72‧‧‧Power Control Department

73‧‧‧Storage Department

74‧‧‧Setting Department

75‧‧‧I / O Control Unit

76‧‧‧ input device

77‧‧‧Output device

E‧‧‧Exhaust

L‧‧‧ transport route

M, M1, M2 ‧‧‧ film forming site

M3‧‧‧ treatment site

G‧‧‧Reactive gas

G1‧‧‧Sputtering gas

G2‧‧‧process gas

S‧‧‧ Attached area

A-A‧‧‧ indicates the longitudinal section direction

FIG. 1 is a schematic cross-sectional view showing an electronic component according to the embodiment. FIG. 2 is a perspective perspective view of a film forming apparatus according to the embodiment. FIG. 3 is a perspective plan view of a film forming apparatus according to the embodiment. Fig. 4 is a schematic longitudinal sectional view taken along A-A in Fig. 3. FIG. 5 is a perspective view showing a tray on which electronic components are arranged. FIG. 6 is an exploded perspective view showing a configuration of the placing section. FIG. 7 is a block diagram showing a control device according to the embodiment. 8 (a) to 8 (c) are explanatory diagrams showing the separation of the placement section with respect to the placement of the tray by the placement section and the adhesive sheet. 9 (a) to 9 (b) are explanatory diagrams showing film formation for an electronic component. FIG. 10 is a graph showing a change in temperature over time in a comparative example. FIG. 11 is a graph showing a change in temperature over time in an example.

Claims (6)

A film-forming device is characterized in that it includes: a chamber, which is a container for introducing a sputtering gas; a film-forming processing section, which is disposed in the chamber and has film-forming materials deposited by sputtering for film formation A sputtering source and forming a film on an electronic component by the sputtering source; a tray provided in a processing area of the film forming processing section and having a mounting surface; and a mounting section mounted on the mounting surface A mounting surface is used to mount the electronic component, and the mounting portion includes: a holding sheet having an adhesive surface with adhesiveness on one side and a non-adhesive surface without adhesiveness on the other side; and an adhesive sheet with close contact on one side The non-adhesive surface has a first adhesive surface with adhesiveness, and the other surface has a second adhesive surface with adhesiveness, which is in close contact with the mounting surface of the tray, and the adhesive surface has a surface for attaching the electronic component. In the attachment region, the first adhesion surface is in close contact with at least the entire area of the non-adhesion surface corresponding to the adhesion region. A film forming device is characterized in that it includes: a chamber, which is a container for introducing a sputtering gas; a transfer section, which is disposed in the chamber, and circulates and transports electronic parts; a film forming processing section, which is provided by sputtering The film-forming material is deposited on a sputtering source for forming a film by the electronic parts cyclically conveyed by the conveying section, and a film is formed on the electronic part by the sputtering source; a tray is conveyed by the conveying section, A mounting surface is provided; and a mounting portion is mounted on the mounting surface for mounting the electronic component, the mounting portion includes: a holding piece, one side having an adhesive surface with adhesiveness, and the other surface having a non-adhesive surface. An adhesive non-adhesive surface; and an adhesive sheet, one side of which has a first adhesive surface having adhesiveness which is in close contact with the non-adhesive surface, and the other side of which has an adhesive second surface which has close contact with the mounting surface of the tray. The adhesion surface has an adhesion area for attaching the electronic component, and the first adhesion surface is in close contact with at least the entire area of the non-adhesion surface corresponding to the adhesion area. The film forming apparatus according to item 1 or item 2 of the scope of patent application, wherein a frame defining a part or all of an outer edge of the attachment area is attached to the adhesive surface of the holding sheet, so that In addition to the entire area of the non-adhesive surface corresponding to the adhesion area, the first adhesion surface is further in close contact with the non-adhesive surface area corresponding to the frame. The film forming apparatus according to any one of claims 1 to 3, wherein if the adhesion force between the first contact surface and the non-adhesion surface is set to Fa, the second When the adhesion force between the close contact surface and the mounting surface is set to Fb, Fa <Fb. The film forming apparatus according to any one of claims 1 to 4 in the scope of patent application, wherein the adhesive sheet has a peeling resistance from the first adhesive surface to the non-adhesive surface smaller than the second adhesive surface. The material of the peeling resistance of the contact surface with respect to the mounting surface is formed. The film forming apparatus according to any one of claims 1 to 5, wherein the thermal conductivity of the adhesive sheet is 0.1 W / (m × K) or more.