JP2015056419A

JP2015056419A - Apparatus and method for treating strip substrate

Info

Publication number: JP2015056419A
Application number: JP2013187019A
Authority: JP
Inventors: 西森　年彦; Toshihiko Nishimori; 年彦西森; 嶋津　正; Tadashi Shimazu; 正嶋津
Original assignee: Mitsubishi Heavy Industries Ltd
Current assignee: Mitsubishi Heavy Industries Ltd
Priority date: 2013-09-10
Filing date: 2013-09-10
Publication date: 2015-03-23

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus and method for processing a strip substrate, capable of obtaining the close contact of the strip substrate with an electrostatic chuck.SOLUTION: A method for processing a strip substrate comprises the steps of: arranging a strip substrate B on the upper surface of an electrostatic chuck 22; placing a weight plate 50A having a weight 52 and an open hole 53 on the strip substrate B so that the weight 52 is positioned at the center of the strip substrate B and a part of the strip substrate B is viewed from the open hole 53; pressing the strip substrate B on the electrostatic chuck 22; changing the inside of a vacuum vessel into a vacuum state; arranging a cover plate 60 having a size covering the whole of the strip substrate B above the weight plate 50A; forming plasma inside the vacuum vessel; attaching the strip substrate B pressed by the weight plate 50A to the electrostatic chuck 22 to closely contact the strip substrate B with the electrostatic chuck 22; taking out the cover plate 60 and the weight plate 50A; and performing plasma processing to the strip substrate B closely contacted with the electrostatic chuck 22.

Description

本発明は、短冊基板に対して成膜やエッチング等のプラズマ処理を行う短冊基板の処理装置及び方法に関する。 The present invention relates to a strip substrate processing apparatus and method for performing plasma processing such as film formation and etching on a strip substrate.

トレーを使用して基板を搬送し、当該基板にプラズマ処理を施す処理装置が知られている（特許文献１）。 A processing apparatus that transports a substrate using a tray and performs plasma processing on the substrate is known (Patent Document 1).

特開２００２−０４３４０４号公報JP 2002-043404 A

通常の円板状の基板上に半導体素子や磁気素子などのデバイスを多数形成し、その基板を短冊状に切断し、切断した短冊基板に対して、成膜などのプラズマ処理を行う必要がある場合がある。このような短冊基板に対しても、トレーを使用して搬送することが考えられるが、短冊基板は、薄く細長い形状であり、図８（ａ）、（ｂ）に示すように、切断した際に歪んで、反ってしまうことがある。なお、図８（ａ）は短冊基板Ｂの上面図であり、図８（ｂ）は短冊基板Ｂの側面図である。このように、短冊基板が反ってしまうことがあるため、トレーを用いて搬送しても、その搬送が困難な場合があり、更には、短冊基板を配置する静電チャックに静電吸着させたくても、その反りにより、静電吸着できない場合もある。 Many devices such as semiconductor elements and magnetic elements are formed on a normal disk-shaped substrate, the substrate is cut into strips, and plasma processing such as film formation is required for the cut strips. There is a case. Although it is conceivable to transport the strip substrate using a tray, the strip substrate has a thin and long shape, and when cut as shown in FIGS. 8 (a) and 8 (b). May be warped and warped. 8A is a top view of the strip substrate B, and FIG. 8B is a side view of the strip substrate B. Since the strip substrate may be warped in this way, even if it is transported using a tray, it may be difficult to transport the strip substrate. Further, it is desirable to electrostatically attract the electrostatic chuck on the strip substrate. However, there is a case where electrostatic adsorption cannot be performed due to the warpage.

そこで、以下のような手順により、処理装置を大気開放し、静電チャック上に短冊基板を手動で配置して、静電吸着させることが考えられる。なお、ここでの静電チャックは単極型である。
（１）処理装置を大気開放し、静電チャック上に短冊基板を手動で配置する。
（２）短冊基板の反りを矯正する。
（３）反りを矯正した短冊基板を静電チャックで吸着する。
（４）大気開放した処理装置を閉鎖し、処理装置内部を真空状態にする。 Therefore, it is conceivable that the processing apparatus is opened to the atmosphere and a strip substrate is manually placed on the electrostatic chuck and electrostatically attracted by the following procedure. Here, the electrostatic chuck is a single pole type.
(1) The processing apparatus is opened to the atmosphere, and a strip substrate is manually placed on the electrostatic chuck.
(2) Correct the warpage of the strip substrate.
(3) Adhere the strip substrate with the warp corrected with an electrostatic chuck.
(4) The processing apparatus opened to the atmosphere is closed, and the processing apparatus is evacuated.

この場合、例えば、重りを用いて短冊基板の反りを矯正して、静電チャックへの吸着を行うことができるが、大気開放した処理装置を閉鎖する前に重りを取る必要があり、その後、処理装置内部を真空状態にすると、真空排気している間に短冊基板から電荷が抜けてしまい、静電チャックへの静電吸着がなくなると言う問題がある。短冊基板の静電チャックへの静電吸着を維持できないと、短冊基板と静電チャックの十分な密着性が得られず、その場合、プラズマ処理時において、短冊基板の温度が上昇し、所望の温度でのプラズマ処理を実施できないことになる。 In this case, for example, it is possible to correct the warpage of the strip substrate using a weight and perform adsorption to the electrostatic chuck, but it is necessary to remove the weight before closing the processing apparatus opened to the atmosphere. When the inside of the processing apparatus is evacuated, there is a problem that charges are released from the strip substrate during evacuation, and electrostatic adsorption to the electrostatic chuck is lost. If the electrostatic attraction of the strip substrate to the electrostatic chuck cannot be maintained, sufficient adhesion between the strip substrate and the electrostatic chuck cannot be obtained. In this case, the temperature of the strip substrate rises during the plasma processing, and the desired The plasma treatment at temperature cannot be performed.

一方、静電チャックとして、グラデエント力を用いた、双極型の静電チャックを用いることも考えられる。ここで、プラズマ処理を行う処理装置には、プラズマ耐性、耐熱性を有する静電チャックが求められている。特に、プラズマにより成膜を行う処理装置では、静電チャック上の短冊基板が配置されていない部分にも膜が成膜されるので、その部分に成膜された膜を、フッ素系ガスを用いたクリーニング処理で除去する必要があり、そのため、クリーニング処理の際のプラズマ耐性、耐熱性を有する静電チャック、例えば、セラミックス系材料の静電チャックが求められている。しかしながら、双極型の静電チャックにおいて、そのようなプラズマ耐性、耐熱性を有するもの（セラミックス系材料のもの）は現実的で無い。 On the other hand, a bipolar electrostatic chuck using a gradient force may be used as the electrostatic chuck. Here, an electrostatic chuck having plasma resistance and heat resistance is required for a processing apparatus that performs plasma processing. In particular, in a processing apparatus that forms a film using plasma, a film is also formed on a portion of the electrostatic chuck where the strip substrate is not disposed. Therefore, the film formed on that portion is used with a fluorine-based gas. Therefore, there is a need for an electrostatic chuck having plasma resistance and heat resistance during the cleaning process, for example, an electrostatic chuck made of a ceramic material. However, a bipolar electrostatic chuck having such plasma resistance and heat resistance (ceramic material) is not realistic.

本発明は上記課題に鑑みなされたもので、短冊基板の静電チャックへの密着性を確保することができる短冊基板の処理装置及び方法を提供することを目的とする。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a strip substrate processing apparatus and method capable of ensuring the adhesion of a strip substrate to an electrostatic chuck.

上記課題を解決する第１の発明に係る短冊基板の処理装置は、
短冊基板にプラズマ処理を行う短冊基板の処理装置であって、
真空容器の内部に設けられ、上面に前記短冊基板を配置する静電チャックと、
前記静電チャックの単電極に静電吸着電圧を供給する電圧供給手段と、
金属材料を絶縁材料で被覆した重りと貫通孔とを有する重り板と、
前記真空容器の内部を真空状態にする真空手段と、
前記静電チャックの上面に配置される前記短冊基板全てを覆う大きさを有するカバー板と、
前記真空容器の内部にプラズマを生成するプラズマ生成手段と、
前記重り板及び前記カバー板を搬送する搬送手段と、
前記電圧供給手段、前記真空手段、前記プラズマ生成手段、前記搬送手段を制御する制御手段と、
を備えることを特徴とする。 The strip substrate processing apparatus according to the first invention for solving the above-mentioned problems is as follows.
A strip substrate processing apparatus for performing plasma processing on a strip substrate,
An electrostatic chuck that is provided inside the vacuum vessel and has the strip substrate disposed on the upper surface;
Voltage supply means for supplying an electrostatic adsorption voltage to a single electrode of the electrostatic chuck;
A weight plate having a weight in which a metal material is covered with an insulating material and a through hole; and
Vacuum means for evacuating the interior of the vacuum vessel;
A cover plate having a size covering all of the strip substrates disposed on the upper surface of the electrostatic chuck;
Plasma generating means for generating plasma inside the vacuum vessel;
Conveying means for conveying the weight plate and the cover plate;
Control means for controlling the voltage supply means, the vacuum means, the plasma generation means, and the transport means;
It is characterized by providing.

当該第１の発明に係る短冊基板の処理装置では、
前記真空容器を大気開放して、前記短冊基板を前記静電チャックの上面に配置し、
前記静電チャックの上面に配置された前記短冊基板の中央に前記重りが位置し、かつ、前記貫通孔から前記短冊基板の一部が見えるように、前記重り板を前記短冊基板の上に置いて、前記短冊基板を前記静電チャックに押し付け、
前記真空容器を閉鎖した後、
前記制御手段は、
前記真空手段を用いて、前記真空容器の内部を真空状態にし、
前記搬送手段を用いて、前記カバー板を前記重り板の上方に配置し、
前記プラズマ生成手段を用いて、前記真空容器の内部にプラズマを生成し、
前記電圧供給手段から前記単電極に静電吸着電圧を供給し、前記重り板で押し付けた前記短冊基板を前記静電チャックに吸着させて、前記短冊基板を前記静電チャックに密着させ、
前記搬送手段を用いて、前記重り板の上方から前記カバー板を取り出し、
前記搬送手段を用いて、前記短冊基板の上から前記重り板を取り出し、
前記静電チャックに密着させた前記短冊基板に対して、プラズマ処理を行う。 In the strip substrate processing apparatus according to the first invention,
Opening the vacuum vessel to the atmosphere, placing the strip substrate on the top surface of the electrostatic chuck,
The weight plate is placed on the strip substrate so that the weight is located at the center of the strip substrate disposed on the upper surface of the electrostatic chuck and a part of the strip substrate can be seen from the through hole. And press the strip substrate against the electrostatic chuck,
After closing the vacuum vessel,
The control means includes
Using the vacuum means, the inside of the vacuum vessel is evacuated,
Using the transport means, the cover plate is disposed above the weight plate,
Using the plasma generation means, generate plasma inside the vacuum vessel,
An electrostatic chucking voltage is supplied to the single electrode from the voltage supply means, the strip substrate pressed by the weight plate is attracted to the electrostatic chuck, and the strip substrate is brought into close contact with the electrostatic chuck,
Using the transport means, take out the cover plate from above the weight plate,
Using the transport means, take out the weight plate from above the strip substrate,
Plasma treatment is performed on the strip substrate in close contact with the electrostatic chuck.

上記課題を解決する第２の発明に係る短冊基板の処理装置は、
上記第１の発明に記載の短冊基板の処理装置において、
前記絶縁材料はポリイミド又はフッ素系樹脂である
ことを特徴とする。 The strip substrate processing apparatus according to the second invention for solving the above-mentioned problems is as follows.
In the strip substrate processing apparatus according to the first invention,
The insulating material is polyimide or fluorine resin.

上記課題を解決する第３の発明に係る短冊基板の処理装置は、
短冊基板にプラズマ処理を行う短冊基板の処理装置であって、
真空容器の内部に設けられ、上面に前記短冊基板を配置する静電チャックと、
前記静電チャックの単電極に静電吸着電圧を供給する電圧供給手段と、
金属材料からなる重りと前記重りを接地する接地線とを有すると共に前記静電チャックの上面に配置される前記短冊基板全てを覆う大きさを有する重り板と、
前記真空容器の内部を真空状態にする真空手段と、
前記真空容器の内部にプラズマを生成するプラズマ生成手段と、
前記重り板を搬送する搬送手段と、
前記電圧供給手段、前記真空手段、前記プラズマ生成手段、前記搬送手段を制御する制御手段と、
を備えることを特徴とする。 A strip substrate processing apparatus according to a third aspect of the present invention for solving the above-mentioned problems is as follows.
A strip substrate processing apparatus for performing plasma processing on a strip substrate,
An electrostatic chuck that is provided inside the vacuum vessel and has the strip substrate disposed on the upper surface;
Voltage supply means for supplying an electrostatic adsorption voltage to a single electrode of the electrostatic chuck;
A weight plate having a weight made of a metal material and a grounding wire for grounding the weight and having a size covering all the strip substrates disposed on the upper surface of the electrostatic chuck;
Vacuum means for evacuating the interior of the vacuum vessel;
Plasma generating means for generating plasma inside the vacuum vessel;
Conveying means for conveying the weight plate;
Control means for controlling the voltage supply means, the vacuum means, the plasma generation means, and the transport means;
It is characterized by providing.

当該第３の発明に係る短冊基板の処理装置では、
前記真空容器を大気開放して、前記短冊基板を前記静電チャックの上面に配置し、
前記静電チャックの上面に配置された前記短冊基板の中央に前記重りが位置するように、前記重り板を前記短冊基板の上に置いて、前記短冊基板を前記静電チャックに押し付け、
前記真空容器を閉鎖した後、
前記制御手段は、
前記真空手段を用いて、前記真空容器の内部を真空状態にし、
前記電圧供給手段から前記単電極に静電吸着電圧を供給し、前記重り板で押し付けた前記短冊基板を前記静電チャックで吸着して、前記短冊基板を前記静電チャックに密着させ、
前記プラズマ生成手段を用いて、前記真空容器の内部にプラズマを生成し、
前記搬送手段を用いて、前記短冊基板の上から前記重り板を取り出し、
前記静電チャックに密着させた前記短冊基板に対して、プラズマ処理を行う。 In the strip substrate processing apparatus according to the third invention,
Opening the vacuum vessel to the atmosphere, placing the strip substrate on the top surface of the electrostatic chuck;
The weight plate is placed on the strip substrate so that the weight is located at the center of the strip substrate disposed on the upper surface of the electrostatic chuck, and the strip substrate is pressed against the electrostatic chuck,
After closing the vacuum vessel,
The control means includes
Using the vacuum means, the inside of the vacuum vessel is evacuated,
An electrostatic chucking voltage is supplied to the single electrode from the voltage supply means, the strip substrate pressed by the weight plate is sucked by the electrostatic chuck, and the strip substrate is brought into close contact with the electrostatic chuck,
Using the plasma generation means, generate plasma inside the vacuum vessel,
Using the transport means, take out the weight plate from above the strip substrate,
Plasma treatment is performed on the strip substrate in close contact with the electrostatic chuck.

上記課題を解決する第４の発明に係る短冊基板の処理方法は、
短冊基板にプラズマ処理を行う短冊基板の処理方法であって、
内部に静電チャックを設けた真空容器を大気開放して、前記短冊基板を前記静電チャックの上面に配置し、
金属材料を絶縁材料で被覆した重りと貫通孔とを有する重り板を用い、前記静電チャックの上面に配置された前記短冊基板の中央に前記重りが位置し、かつ、前記貫通孔から前記短冊基板の一部が見えるように、前記重り板を前記短冊基板の上に置いて、前記短冊基板を前記静電チャックに押し付け、
前記真空容器を閉鎖し
前記真空容器の内部を真空状態にし、
前記静電チャックの上面に配置される前記短冊基板全てを覆う大きさを有するカバー板を用い、前記カバー板を前記重り板の上方に配置し、
前記真空容器の内部にプラズマを生成し、
前記静電チャックの単電極に静電吸着電圧を供給し、前記重り板で押し付けた前記短冊基板を前記静電チャックに吸着させて、前記短冊基板を前記静電チャックに密着させ、
前記重り板の上方から前記カバー板を取り出し、
前記短冊基板の上から前記重り板を取り出し、
前記静電チャックに密着させた前記短冊基板に対して、プラズマ処理を行う
ことを特徴とする。 A strip substrate processing method according to a fourth invention for solving the above-mentioned problems is
A strip substrate processing method for performing plasma processing on a strip substrate,
A vacuum vessel provided with an electrostatic chuck inside is opened to the atmosphere, and the strip substrate is disposed on the upper surface of the electrostatic chuck.
A weight plate having a weight in which a metal material is coated with an insulating material and a through hole is used, the weight is located at the center of the strip substrate disposed on the upper surface of the electrostatic chuck, and the strip is formed from the through hole. Place the weight plate on the strip substrate so that a part of the substrate is visible, and press the strip substrate against the electrostatic chuck,
Close the vacuum vessel and evacuate the inside of the vacuum vessel;
Using a cover plate having a size that covers all of the strip substrates disposed on the upper surface of the electrostatic chuck, the cover plate is disposed above the weight plate,
Generating plasma inside the vacuum vessel;
Supplying an electrostatic adsorption voltage to a single electrode of the electrostatic chuck, adhering the strip substrate pressed by the weight plate to the electrostatic chuck, and bringing the strip substrate into close contact with the electrostatic chuck,
Remove the cover plate from above the weight plate,
Remove the weight plate from the strip substrate,
Plasma treatment is performed on the strip substrate in close contact with the electrostatic chuck.

上記課題を解決する第５の発明に係る短冊基板の処理方法は、
上記第４の発明に記載の短冊基板の処理方法において、
前記絶縁材料はポリイミド又はフッ素系樹脂である
ことを特徴とする。 A strip substrate processing method according to a fifth aspect of the present invention for solving the above-mentioned problem is as follows.
In the strip substrate processing method according to the fourth invention,
The insulating material is polyimide or fluorine resin.

上記課題を解決する第６の発明に係る短冊基板の処理方法は、
短冊基板にプラズマ処理を行う短冊基板の処理方法であって、
内部に静電チャックを設けた真空容器を大気開放して、前記短冊基板を前記静電チャックの上面に配置し、
金属材料からなる重りと前記重りを接地する接地線とを有すると共に前記静電チャックの上面に配置される前記短冊基板全てを覆う大きさを有する重り板を用い、前記静電チャックの上面に配置された前記短冊基板の中央に前記重りが位置するように、前記重り板を前記短冊基板の上に置いて、前記短冊基板を前記静電チャックに押し付け、
前記真空容器を閉鎖し、
前記真空容器の内部を真空状態にし、
前記静電チャックの単電極に静電吸着電圧を供給し、前記重り板で押し付けた前記短冊基板を前記静電チャックに吸着させて、前記短冊基板を前記静電チャックに密着させ、
前記真空容器の内部にプラズマを生成し、
前記短冊基板の上から前記重り板を取り出し、
前記静電チャックに密着させた前記短冊基板に対して、プラズマ処理を行う
ことを特徴とする。 A strip substrate processing method according to a sixth invention for solving the above-mentioned problems is as follows.
A strip substrate processing method for performing plasma processing on a strip substrate,
A vacuum vessel provided with an electrostatic chuck inside is opened to the atmosphere, and the strip substrate is disposed on the upper surface of the electrostatic chuck.
A weight plate having a weight made of a metal material and a ground wire for grounding the weight and having a size covering all the strip substrates disposed on the upper surface of the electrostatic chuck is disposed on the upper surface of the electrostatic chuck. The weight plate is placed on the strip substrate so that the weight is located in the center of the strip substrate, and the strip substrate is pressed against the electrostatic chuck,
Closing the vacuum vessel;
The inside of the vacuum vessel is evacuated,
Supplying an electrostatic adsorption voltage to a single electrode of the electrostatic chuck, adhering the strip substrate pressed by the weight plate to the electrostatic chuck, and bringing the strip substrate into close contact with the electrostatic chuck,
Generating plasma inside the vacuum vessel;
Remove the weight plate from the strip substrate,
Plasma treatment is performed on the strip substrate in close contact with the electrostatic chuck.

上記課題を解決する第７の発明に係る短冊基板の処理方法は、
短冊基板にプラズマ処理を行う短冊基板の処理方法であって、
内部に静電チャックを設けた真空容器を大気開放して、前記短冊基板を前記静電チャックの上面に配置し、
金属材料からなる重りと前記重りを接地する接地線とを有する重り板を用い、前記静電チャックの上面に配置された前記短冊基板の中央に前記重りが位置するように、前記重り板を前記短冊基板の上に置いて、前記短冊基板を前記静電チャックに押し付け、
前記真空容器を閉鎖し、
前記真空容器の内部を真空状態にし、
前記静電チャックの単電極に静電吸着電圧を供給し、前記重り板で押し付けた前記短冊基板を前記静電チャックに吸着させて、前記短冊基板を前記静電チャックに密着させ、
前記短冊基板の上から前記重り板を取り出し、
前記静電チャックの上面に配置される前記短冊基板全てを覆う大きさを有するカバー板を用い、前記カバー板を前記短冊基板の上方に配置し、
前記真空容器の内部にプラズマを生成し、
前記短冊基板の上方から前記カバー板を取り出し、
前記静電チャックに密着させた前記短冊基板に対して、プラズマ処理を行う
ことを特徴とする。 A strip substrate processing method according to a seventh invention for solving the above-described problems is as follows.
A strip substrate processing method for performing plasma processing on a strip substrate,
A vacuum vessel provided with an electrostatic chuck inside is opened to the atmosphere, and the strip substrate is disposed on the upper surface of the electrostatic chuck.
Using a weight plate having a weight made of a metal material and a ground wire for grounding the weight, the weight plate is arranged so that the weight is positioned in the center of the strip substrate disposed on the upper surface of the electrostatic chuck. Put on the strip substrate, press the strip substrate against the electrostatic chuck,
Closing the vacuum vessel;
The inside of the vacuum vessel is evacuated,
Supplying an electrostatic adsorption voltage to a single electrode of the electrostatic chuck, adhering the strip substrate pressed by the weight plate to the electrostatic chuck, and bringing the strip substrate into close contact with the electrostatic chuck,
Remove the weight plate from the strip substrate,
Using a cover plate having a size covering all of the strip substrates disposed on the upper surface of the electrostatic chuck, the cover plate is disposed above the strip substrate,
Generating plasma inside the vacuum vessel;
Take out the cover plate from above the strip substrate,
Plasma treatment is performed on the strip substrate in close contact with the electrostatic chuck.

本発明によれば、短冊基板の静電チャックへの密着性を確保できるので、プラズマ処理中の短冊基板の温度を所望の温度に安定させて、プラズマ処理を行うことができる。 According to the present invention, the adhesiveness of the strip substrate to the electrostatic chuck can be ensured, so that the temperature of the strip substrate during the plasma processing can be stabilized at a desired temperature and the plasma processing can be performed.

本発明に係る短冊基板の処理装置の実施形態の一例（実施例１）として、成膜処理装置を示す図であり、（ａ）は成膜処理装置を示す構成図、（ｂ）は成膜処理装置を構成する成膜室を示す構成図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing a film forming apparatus as an example (Example 1) of an embodiment of a strip substrate processing apparatus according to the present invention, FIG. It is a block diagram which shows the film-forming chamber which comprises a processing apparatus. 図１に示した成膜処理装置で用いる重り板を示す図であり、（ａ）はその上面図、（ｂ）はその下面図である。It is a figure which shows the weight board used with the film-forming processing apparatus shown in FIG. 1, (a) is the top view, (b) is the bottom view. 図１に示した成膜処理装置で用いるカバー板を示す上面図である。It is a top view which shows the cover board used with the film-forming processing apparatus shown in FIG. 図１（ｂ）に示した成膜室において、静電チャック上に短冊基板を配置した状態を示す図であり、（ａ）はその上面図、（ｂ）はＡ領域の断面図である。In the film-forming chamber shown in FIG.1 (b), it is a figure which shows the state which has arrange | positioned the strip board | substrate on an electrostatic chuck, (a) is the top view, (b) is sectional drawing of A area | region. 図１（ｂ）に示した成膜室において、静電チャック上に配置した短冊基板上に重り板を配置した状態を示す図であり、（ａ）はその上面図、（ｂ）はＡ領域の断面図である。FIG. 2B is a diagram illustrating a state in which a weight plate is disposed on a strip substrate disposed on an electrostatic chuck in the film forming chamber illustrated in FIG. 1B, and FIG. FIG. 図１（ｂ）に示した成膜室において、静電チャック上に配置した短冊基板及び重り板の上方にカバー板を配置した状態を示す図であり、（ａ）はその上面図、（ｂ）はＡ領域の断面図である。In the film-forming chamber shown in FIG.1 (b), it is a figure which shows the state which has arrange | positioned the cover board above the strip board | substrate and weight board which were arrange | positioned on an electrostatic chuck, (a) is the top view, (b) ) Is a cross-sectional view of region A. 本発明に係る短冊基板の処理装置の実施形態の他の一例（実施例２）として、図２に示した重り板の変形例を示す図であり、（ａ）はその上面図、（ｂ）はその下面図である。FIG. 6 is a view showing a modified example of the weight plate shown in FIG. 2 as another example (Example 2) of the embodiment of the strip substrate processing apparatus according to the present invention, wherein (a) is a top view thereof, and (b). Is a bottom view thereof. 短冊基板を説明する図であり、（ａ）は上面図、（ｂ）は側面図である。It is a figure explaining a strip board | substrate, (a) is a top view, (b) is a side view.

本発明に係る短冊基板の処理装置及び方法の実施形態について、図１〜図７を参照して説明を行う。なお、ここでは、プラズマ処理を行う短冊基板の処理装置の一例として、成膜処理装置（ＣＶＤ装置）を例示するが、エッチング処理装置でも良い。 Embodiments of a strip substrate processing apparatus and method according to the present invention will be described with reference to FIGS. Here, as an example of a strip substrate processing apparatus that performs plasma processing, a film forming processing apparatus (CVD apparatus) is illustrated, but an etching processing apparatus may be used.

（実施例１）
最初に、本実施例の成膜処理装置の装置構成について説明を行う。ここで、図１（ａ）は、本実施例の成膜処理装置を示す構成図であり、図１（ｂ）は、成膜処理装置を構成する成膜室を示す構成図である。 Example 1
Initially, the apparatus structure of the film-forming processing apparatus of a present Example is demonstrated. Here, FIG. 1A is a configuration diagram showing a film forming apparatus of the present embodiment, and FIG. 1B is a configuration diagram showing a film forming chamber constituting the film forming apparatus.

本実施例の成膜処理装置は、図１（ａ）に示すように、成膜室１０、制御装置（制御手段）２０、搬送室３０、設置室４０を有する。搬送室３０に対し、成膜室１０と設置室４０は隣接して配置されている。成膜室１０は、ゲートバルブ３１を介して、搬送室３０と接続されており、ゲートバルブ３１の開閉により、成膜室１０と搬送室３０とを連通状態にしたり、成膜室１０を搬送室３０から閉鎖した状態にしたりしている。 As shown in FIG. 1A, the film forming apparatus of this embodiment includes a film forming chamber 10, a control device (control means) 20, a transfer chamber 30, and an installation chamber 40. The film forming chamber 10 and the installation chamber 40 are disposed adjacent to the transfer chamber 30. The film formation chamber 10 is connected to the transfer chamber 30 via a gate valve 31. By opening and closing the gate valve 31, the film formation chamber 10 and the transfer chamber 30 are brought into communication with each other, or the film formation chamber 10 is transferred. The chamber 30 is closed.

同様に、設置室４０も、ゲートバルブ３２を介して、搬送室３０と接続されており、ゲートバルブ３２の開閉により、設置室４０と搬送室３０とを連通状態にしたり、設置室４０を搬送室３０から閉鎖した状態にしたりしている。 Similarly, the installation chamber 40 is also connected to the transfer chamber 30 via the gate valve 32. By opening and closing the gate valve 32, the installation chamber 40 and the transfer chamber 30 are brought into communication with each other, and the installation chamber 40 is transferred. The chamber 30 is closed.

設置室４０の内部には、後述する重り板５０Ａ及びカバー板６０が設置されている。例えば、少なくとも２つのスロットを有するカセットを設置室４０の内部に設置しておき、異なるスロットに重り板５０Ａ、カバー板６０を各々挿入しておけば、１つの設置室４０から重り板５０Ａ、カバー板６０を各々搬送可能となる。特に、重り板５０Ａ、カバー板６０の大きさ、厚さ等を、一般的に使用される６インチ基板、８インチ基板等と同じにすれば、重り板５０Ａ、カバー板６０を設置するカセットとして、上記６インチ基板、８インチ基板等で用いるカセットを使用でき、更には、設置室として、上記６インチ基板、８インチ基板等で用いるロードロック室を用いることもできる。なお、重り板５０Ａ用の設置室、カバー板６０用の設置室は、別々に設けても良い。 In the installation chamber 40, a weight plate 50A and a cover plate 60 described later are installed. For example, if a cassette having at least two slots is installed in the installation chamber 40, and the weight plate 50A and the cover plate 60 are inserted into different slots, the weight plate 50A and the cover from one installation chamber 40 are inserted. Each of the plates 60 can be transported. In particular, if the weight plate 50A and the cover plate 60 have the same size, thickness, etc. as the commonly used 6-inch and 8-inch substrates, the cassette for installing the weight plate 50A and the cover plate 60 is used. A cassette used for the 6-inch substrate, the 8-inch substrate, or the like can be used, and a load lock chamber used for the 6-inch substrate, the 8-inch substrate, or the like can be used as the installation chamber. Note that the installation room for the weight plate 50A and the installation room for the cover plate 60 may be provided separately.

搬送室３０の内部には、搬送ロボット（搬送手段）３３が配設されている。そして、搬送ロボット３３のアーム３４を用いて、重り板５０Ａ、カバー板６０の搬送を行っている。例えば、カバー板６０を設置室４０から成膜室１０へ搬送する際には、ゲートバルブ３２を開け、設置室４０へアーム３４を伸ばし、カバー板６０を設置室４０から引き出す。その後、ゲートバルブ３１を開け、成膜室１０へアーム３３を伸ばし、カバー板６０を成膜室１０の内部に搬送することになる。重り板５０Ａを設置室４０から成膜室１０へ搬送する場合には、上述した手順と同じ手順で行えば良い。又、重り板５０Ａ、カバー板６０の成膜室１０から設置室４０へ戻す（搬送する）場合には、上述した手順と逆の手順で行えば良い。 Inside the transfer chamber 30, a transfer robot (transfer means) 33 is disposed. Then, the weight plate 50 </ b> A and the cover plate 60 are transported using the arm 34 of the transport robot 33. For example, when the cover plate 60 is transferred from the installation chamber 40 to the film formation chamber 10, the gate valve 32 is opened, the arm 34 is extended to the installation chamber 40, and the cover plate 60 is pulled out from the installation chamber 40. Thereafter, the gate valve 31 is opened, the arm 33 is extended to the film forming chamber 10, and the cover plate 60 is transferred into the film forming chamber 10. When the weight plate 50A is transferred from the installation chamber 40 to the film formation chamber 10, the same procedure as described above may be performed. Further, when returning (transporting) the weight plate 50A and the cover plate 60 from the film formation chamber 10 to the installation chamber 40, a procedure reverse to the above-described procedure may be performed.

そして、制御装置２０は、搬送室３０のゲートバルブ３１、３２、搬送ロボット３３等の動作を制御すると共に、以下に説明する成膜室１０等も制御している。 The control device 20 controls operations of the gate valves 31 and 32 and the transfer robot 33 in the transfer chamber 30 and also controls the film formation chamber 10 and the like described below.

成膜室１０としては、公知のプラズマＣＶＤ装置の構成で良いが、本実施例の場合、後述する処理方法を考慮すると、図１（ｂ）に示すように、ＩＣＰ（Inductively Coupled Plasma；誘導結合プラズマ）型のプラズマ生成装置を有するものが良い。 The film forming chamber 10 may have a configuration of a known plasma CVD apparatus. However, in the case of the present embodiment, in consideration of the processing method described later, as shown in FIG. 1B, ICP (Inductively Coupled Plasma; inductive coupling) It is preferable to have a plasma type plasma generator.

具体的には、本実施例の成膜室１０は、真空容器１１となる筒状容器１２と天井板１３とを有しており、円筒状の筒状容器１２の上部開口部を閉鎖するように、セラミクス製の円板状の天井板１３が配設されている。筒状容器１２には、内部を真空状態にする真空装置（真空手段）１４が接続されており、真空容器１１の内部を高い真空度に維持可能である。 Specifically, the film forming chamber 10 of the present embodiment includes a cylindrical container 12 that serves as a vacuum container 11 and a ceiling plate 13 so as to close the upper opening of the cylindrical cylindrical container 12. Further, a disk-shaped ceiling board 13 made of ceramics is disposed. The cylindrical container 12 is connected to a vacuum device (vacuum means) 14 for making the inside in a vacuum state, and the inside of the vacuum container 11 can be maintained at a high degree of vacuum.

天井板１３の上方（直上）には、複数の円形リングからなる高周波アンテナ１５が配置されており、高周波アンテナ１５には整合器１６を介して高周波電源１７が接続されている。この高周波電源１７は、後述する低周波電源２７より高い発振周波数（例えば、１３．５６ＭＨｚ）を高周波アンテナ１５に給電可能となっており、入射窓となる天井板１３を透過して、プラズマＰを生成するための高周波電磁波（ＲＦ）を真空容器１１内へ入射可能となっている。これらの構成により、プラズマ生成手段を構成しており、所謂、ＩＣＰ型のプラズマ生成装置の構成となっている。 A high-frequency antenna 15 composed of a plurality of circular rings is arranged above (directly above) the ceiling plate 13, and a high-frequency power source 17 is connected to the high-frequency antenna 15 via a matching unit 16. The high-frequency power source 17 can supply a high oscillation frequency (for example, 13.56 MHz) to the high-frequency antenna 15 than a low-frequency power source 27 described later, and transmits the plasma P through the ceiling plate 13 serving as an entrance window. A high frequency electromagnetic wave (RF) for generation can be incident into the vacuum vessel 11. With these configurations, plasma generation means is configured, which is a configuration of a so-called ICP type plasma generation apparatus.

又、筒状容器１２の側壁部分には、天井板１３より低く、後述する静電チャック２２より高い位置に複数のガスノズル１８が設けられており、制御装置２０が制御する流量制御装置（図示省略）を用い、ガスノズル１８を介して、所望の流量、所望のガスを真空容器１１の内部に供給可能となっている。供給されるガスは、プロセスに応じて変更され、例えば、絶縁膜（例えば、酸化珪素膜、窒化珪素膜）のプロセスには、原料ガスとなるＳｉＨ₄、Ｎ₂、Ｏ₂などが使用され、プラズマクリーニングのプロセスには、ＮＦ₃などが使用される。 A plurality of gas nozzles 18 are provided on the side wall portion of the cylindrical container 12 at a position lower than the ceiling plate 13 and higher than the electrostatic chuck 22 described later, and a flow rate control device (not shown) controlled by the control device 20. ), A desired flow rate and a desired gas can be supplied into the vacuum vessel 11 through the gas nozzle 18. The supplied gas is changed according to the process. For example, SiH ₄ , N ₂ , O ₂ or the like used as a source gas is used for the process of the insulating film (for example, silicon oxide film, silicon nitride film), For the plasma cleaning process, NF ₃ or the like is used.

又、筒状容器１２の内部の下部には、成膜対象となる短冊基板を配置する基板支持台２１が設置されている。この基板支持台２１は、短冊基板を静電吸着する静電チャック２２と、この静電チャック２２を支持する支持軸２３とにより構成されている。静電チャック２２の内部には加熱のためのヒータ（図示省略）が設置されており、このヒータは制御装置２０により温度が調整されている。これにより、プラズマ処理中の短冊基板を所望の温度（例えば、１５０〜７００℃）に制御することができる。 In addition, a substrate support 21 on which a strip substrate to be formed is placed is installed at the lower part inside the cylindrical container 12. The substrate support 21 is composed of an electrostatic chuck 22 that electrostatically attracts a strip substrate and a support shaft 23 that supports the electrostatic chuck 22. A heater (not shown) for heating is installed inside the electrostatic chuck 22, and the temperature of the heater is adjusted by the control device 20. Thereby, the strip board | substrate in plasma processing can be controlled to desired temperature (for example, 150-700 degreeC).

又、静電チャック２２には、単電極２４が設けられており、この単電極２４には、コンデンサ２５、整合器２６を介して低周波電源２７が接続されている。低周波電源２７は、高周波電源１７より低い発振周波数（例えば、４ＭＨｚ）を単電極２４に印加し、短冊基板にバイアスパワーを印加できるようになっている。 The electrostatic chuck 22 is provided with a single electrode 24, and a low frequency power supply 27 is connected to the single electrode 24 via a capacitor 25 and a matching unit 26. The low frequency power supply 27 can apply a bias power to the strip substrate by applying an oscillation frequency (for example, 4 MHz) lower than that of the high frequency power supply 17 to the single electrode 24.

更に、上述した単電極２４には、短冊基板を静電吸着する直流の静電吸着電圧を供給する静電電源（電圧供給手段）２８が接続されており、静電チャック２２上に短冊基板を吸着保持可能としている。この静電電源２８は、高周波電源１７や低周波電源２７のパワーが回り込まないように、ローパスフィルター（ＬＰＦ）２９を介して接続されている。 Further, an electrostatic power source (voltage supply means) 28 for supplying a DC electrostatic adsorption voltage for electrostatically adsorbing the strip substrate is connected to the single electrode 24 described above, and the strip substrate is mounted on the electrostatic chuck 22. Adsorption holding is possible. The electrostatic power source 28 is connected via a low-pass filter (LPF) 29 so that the power of the high-frequency power source 17 and the low-frequency power source 27 does not wrap around.

そして、制御装置２０は、成膜室１０において、真空装置１４、高周波電源１７、低周波電源２７、静電電源２８、ヒータ、流量制御装置等を制御している。 The control device 20 controls the vacuum device 14, the high frequency power source 17, the low frequency power source 27, the electrostatic power source 28, the heater, the flow rate control device, and the like in the film forming chamber 10.

次に、図１に示した成膜処理装置で用いる重り板５０Ａ、カバー板６０を、図２、図３を参照して説明する。なお、図２（ａ）は、重り板５０Ａの上面図であり、図２（ｂ）は、重り板５０Ａの下面図である。又、図３は、カバー板６０を示す上面図である。 Next, the weight plate 50A and the cover plate 60 used in the film forming apparatus shown in FIG. 1 will be described with reference to FIGS. 2A is a top view of the weight plate 50A, and FIG. 2B is a bottom view of the weight plate 50A. FIG. 3 is a top view showing the cover plate 60.

重り板５０Ａは、円板状の板部材５１と、板部材５１の下面側に設けられると共に金属材料を絶縁材料で被覆した複数の重り５２と、板部材５１を貫通して設けられた複数の貫通孔５３とを有する。板部材５１は、例えば、セラミックス系材料から構成される。又、重り５２は、後述する図５（ｂ）、図６（ｂ）に示すように、金属材料からなる金属部５２ａと、金属部５２ａの表面を被覆する被覆部５２ｂとから構成され、被覆部５２ｂは、絶縁性、耐熱性があり、金属より柔らかい樹脂、例えば、ポリイミドやフッ素系樹脂（例えば、テフロン（登録商標）系樹脂）等から構成される。このように、重り５２の表面を柔らかい材料で被覆することにより、短冊基板Ｂでの機械的ダメージ（ひっかき傷の発生、膜剥がれ）の発生を抑制することができる。 The weight plate 50A includes a disk-shaped plate member 51, a plurality of weights 52 provided on the lower surface side of the plate member 51 and coated with a metal material with an insulating material, and a plurality of weights provided through the plate member 51. And a through hole 53. The plate member 51 is made of, for example, a ceramic material. Further, as shown in FIGS. 5B and 6B described later, the weight 52 includes a metal part 52a made of a metal material and a covering part 52b covering the surface of the metal part 52a. The part 52b has insulating properties and heat resistance and is made of a softer resin than metal, for example, polyimide, fluorine resin (for example, Teflon (registered trademark) resin), or the like. Thus, by covering the surface of the weight 52 with a soft material, it is possible to suppress the occurrence of mechanical damage (the occurrence of scratches and film peeling) on the strip substrate B.

ここで、短冊基板は、所定の位置に配列して静電チャック２２上に配置される。例えば、後述する図４（ａ）に示すように、静電チャック２２上に３列×５個の配列で、各列の短冊基板Ｂの位置を揃えて配置される。 Here, the strip substrate is arranged on the electrostatic chuck 22 in a predetermined position. For example, as shown in FIG. 4A, which will be described later, the strip substrates B in each row are arranged on the electrostatic chuck 22 in an array of 3 rows × 5.

このように配列された複数の短冊基板Ｂに対し、重り５２は、各列の短冊基板Ｂの中央に位置するように、重り板５０Ａの下面側に配置されており、本実施例では、短冊基板Ｂの配列に対応して、３つの棒状の重り５２が配置されている。又、貫通孔５３は、配列された短冊基板Ｂの一部が上方から見えるように配置されており、本実施例では、短冊基板Ｂの配列に対応して、短冊基板Ｂの両端部が上方から見えるように、６つの貫通孔５３が配置されている。なお、重り５２は、各列の短冊基板Ｂに対して複数設けても良く、貫通孔５３から短冊基板Ｂの一部が上方から見えれば、例えば、中央及び端部に重り５２を設けても良い。 For the plurality of strip substrates B arranged in this way, the weight 52 is arranged on the lower surface side of the weight plate 50A so as to be positioned at the center of each row of strip substrates B. In this embodiment, the strips are arranged. Corresponding to the arrangement of the substrates B, three rod-like weights 52 are arranged. Further, the through holes 53 are arranged so that a part of the arranged strip substrates B can be seen from above, and in this embodiment, both ends of the strip substrates B are located upward corresponding to the arrangement of the strip substrates B. As can be seen from the figure, six through holes 53 are arranged. Note that a plurality of weights 52 may be provided for each row of strip substrates B. If a part of the strip substrate B can be seen from above through the through holes 53, for example, the weights 52 may be provided at the center and at the end. good.

カバー板６０は、円板状の形状をしており、例えば、セラミックス系材料から構成される。カバー板６０は、プラズマ点火の際のＥＳＤ（Electrostatic Discharge）を防止するものであり、その大きさは、少なくとも、静電チャック２２の上面に配置される短冊基板Ｂ全てを覆う大きさが良く、望ましくは、静電チャック２２の大きさより大きい方が良い。 The cover plate 60 has a disc shape, and is made of, for example, a ceramic material. The cover plate 60 prevents ESD (Electrostatic Discharge) at the time of plasma ignition, and its size is good enough to cover at least all the strip substrates B arranged on the upper surface of the electrostatic chuck 22. Desirably, it should be larger than the size of the electrostatic chuck 22.

次に、図１〜図３と共に、図４〜図６も参照して、本実施例の短冊基板の処理方法を説明する。なお、図４（ａ）は、図１（ｂ）に示した成膜室１０において、静電チャック２２上に短冊基板Ｂを配置した状態の上面図であり、図４（ｂ）は、図４（ａ）のＡ領域の断面図である。又、図５（ａ）は、図１（ｂ）に示した成膜室１０において、静電チャック２２上に配置した短冊基板Ｂ上に重り板５０Ａを配置した状態の上面図であり、図５（ｂ）は、図５（ａ）のＡ領域の断面図である。又、図６（ａ）は、図１（ｂ）に示した成膜室１０において、静電チャック２２上に配置した短冊基板Ｂ及び重り板５０Ａの上方にカバー板６０を配置した状態の上面図であり、図６（ｂ）は、図６（ａ）のＡ領域の断面図である。 Next, with reference to FIGS. 4 to 6 together with FIGS. 1 to 3, the strip substrate processing method of this embodiment will be described. 4A is a top view showing a state in which the strip substrate B is disposed on the electrostatic chuck 22 in the film forming chamber 10 shown in FIG. 1B, and FIG. It is sectional drawing of A area | region of 4 (a). FIG. 5A is a top view showing a state in which the weight plate 50A is arranged on the strip substrate B arranged on the electrostatic chuck 22 in the film forming chamber 10 shown in FIG. 1B. FIG. 5B is a cross-sectional view of a region A in FIG. FIG. 6A shows an upper surface of the film forming chamber 10 shown in FIG. 1B in a state where the cover plate 60 is arranged above the strip substrate B and the weight plate 50A arranged on the electrostatic chuck 22. FIG. 6B is a cross-sectional view of a region A in FIG.

（１−１）成膜室１０において、真空容器１１の天井板１３を取り外して、真空容器１１を大気開放し、静電チャック２２上に短冊基板Ｂを手動で配置する。例えば、短冊基板Ｂの配列位置となる開口部を複数有する手動配置用枠を予め作製しておき、手動配置用枠を静電チャック２２上に置いた後、各開口部内に短冊基板Ｂを各々配置し、その後、手動配置用枠を取り外せば、図４（ａ）に示すように、所定の位置に複数の短冊基板Ｂが手動で配列して設置されることになる。このとき、短冊基板Ｂは、反っている場合には、図４（ｂ）に示すように、反った凸側が上面になるように配置されている。 (1-1) In the film forming chamber 10, the ceiling plate 13 of the vacuum vessel 11 is removed, the vacuum vessel 11 is opened to the atmosphere, and the strip substrate B is manually placed on the electrostatic chuck 22. For example, a manual placement frame having a plurality of openings serving as the arrangement positions of the strip substrates B is prepared in advance, and after placing the manual placement frame on the electrostatic chuck 22, the strip substrates B are respectively placed in the openings. If the manual placement frame is removed after the placement, a plurality of strip substrates B are manually arranged and placed at predetermined positions as shown in FIG. 4A. At this time, when the strip substrate B is warped, as shown in FIG. 4B, the strip substrate B is arranged so that the warped convex side becomes the upper surface.

（１−２）配置された複数の短冊基板Ｂの上に重り板５０Ａを置く。このとき、図５（ａ）に示すように、各重り５２が各列の短冊基板Ｂの中央に位置し、かつ、貫通孔５３から短冊基板Ｂの両端が見えるように、重り板５０Ａを置く。これにより、図５（ｂ）に示すように、重り５２が短冊基板Ｂの中央を静電チャック２２に押し付けて、短冊基板Ｂの反りを矯正することになる。 (1-2) The weight plate 50A is placed on the plurality of strip substrates B arranged. At this time, as shown in FIG. 5A, the weight plates 50A are placed so that each weight 52 is positioned at the center of each row of strip substrates B and both ends of the strip substrates B can be seen through the through holes 53. . Accordingly, as shown in FIG. 5B, the weight 52 presses the center of the strip substrate B against the electrostatic chuck 22 and corrects the warp of the strip substrate B.

（１−３）重り板５０Ａを短冊基板Ｂの上に置いた状態で、真空容器１１を天井板１３で閉鎖し、真空装置１４を用いて、真空容器１１の真空排気を行い、真空容器１１内を真空状態にする。 (1-3) With the weight plate 50 </ b> A placed on the strip substrate B, the vacuum vessel 11 is closed with the ceiling plate 13, and the vacuum vessel 11 is evacuated using the vacuum device 14. The inside is evacuated.

（１−４）真空容器１１内を真空状態にした後、搬送ロボット３３を用いて、設置室４０から真空容器１１へカバー板６０を搬送するが、搬送ロボット３３のアーム３４にカバー板６０を乗せた状態で、重り板５０Ａの上方にカバー板６０を配置する。このとき、カバー板６０は、図６（ａ）に示すように、上方から見て、全ての短冊基板Ｂを覆うように配置され、そして、図６（ｂ）に示すように、側方から見て、重り板５０Ａの上方に浮いたように配置される。なお、カバー板６０は、全ての短冊基板Ｂを覆うように配置できれば、重り板５０Ａの上に直接乗せるように配置しても良い。このように、全ての短冊基板Ｂを覆うように、カバー板６０を配置することにより、プラズマＰの点火時の短冊基板Ｂのプラズマダメージを低減することができる。 (1-4) After the vacuum container 11 is evacuated, the cover robot 60 is used to transfer the cover plate 60 from the installation chamber 40 to the vacuum container 11. The cover plate 60 is attached to the arm 34 of the transfer robot 33. The cover plate 60 is disposed above the weight plate 50A in the state of being placed. At this time, as shown in FIG. 6A, the cover plate 60 is arranged so as to cover all the strip substrates B as viewed from above, and from the side as shown in FIG. 6B. As seen, it is arranged so as to float above the weight plate 50A. The cover plate 60 may be arranged so as to be placed directly on the weight plate 50A as long as it can be arranged so as to cover all the strip substrates B. In this way, by disposing the cover plate 60 so as to cover all the strip substrates B, the plasma damage of the strip substrates B when the plasma P is ignited can be reduced.

（１−５）カバー板６０が重り板５０Ａの上にある状態で、高周波アンテナ１５、整合器１６、高周波電源１７を用い、プラズマＰを点火する。このとき、プラズマＰの点火条件としては、数百Ｗ程度の低いＲＦパワーで、Ｎ₂やＡｒ等の不活性ガスを用いる。更に、比較的高い圧力（例えば、数百ｍＴｏｒｒ〜数千ｍＴｏｒｒ）でプラズマＰを点灯すると、プラズマＰがアンテナ１５に近いところに生成されるため、静電チャック２２に静電吸着された短冊基板Ｂ近傍のプラズマ密度をより小さい状態とすることができる。加えて、バイアスを短冊基板Ｂ側に印加しないようにすれば、なお良い。 (1-5) Plasma P is ignited using high-frequency antenna 15, matching unit 16, and high-frequency power source 17 in a state where cover plate 60 is on weight plate 50A. At this time, as an ignition condition of the plasma P, an inert gas such as N ₂ or Ar is used with a low RF power of about several hundred W. Further, when the plasma P is turned on at a relatively high pressure (for example, several hundred mTorr to several thousand mTorr), the plasma P is generated near the antenna 15, so that the strip substrate is electrostatically attracted to the electrostatic chuck 22. The plasma density in the vicinity of B can be made smaller. In addition, it is even better if no bias is applied to the strip substrate B side.

（１−６）プラズマＰが生成された状態で、（１−６ａ）静電電源２８から単電極２４に直流電圧を供給し、（１−６ｂ）搬送ロボット３３を用いて、重り板５０Ａの上方にあるカバー板６０を取り出し、カバー板６０を真空容器１１から設置室４０へ搬送する。静電電源２８から単電極２４に直流電圧を供給することにより、重り板５０Ａにより反りを矯正した短冊基板Ｂを静電チャック２２で吸着して、短冊基板Ｂを静電チャック２２に密着させる。このとき、重り板５０Ａには複数の貫通孔５３が有り、短冊基板ＢはプラズマＰを経由して接地されるので、これにより、短冊基板Ｂが静電チャック２２に吸着されることになる。 (1-6) With the plasma P generated, (1-6a) DC voltage is supplied from the electrostatic power supply 28 to the single electrode 24, and (1-6b) the weight of the weight plate 50A is adjusted using the transfer robot 33. The upper cover plate 60 is taken out, and the cover plate 60 is transferred from the vacuum vessel 11 to the installation chamber 40. By supplying a DC voltage from the electrostatic power source 28 to the single electrode 24, the strip substrate B whose warpage has been corrected by the weight plate 50 </ b> A is attracted by the electrostatic chuck 22, and the strip substrate B is brought into close contact with the electrostatic chuck 22. At this time, the weight plate 50A has a plurality of through holes 53, and the strip substrate B is grounded via the plasma P, whereby the strip substrate B is attracted to the electrostatic chuck 22.

なお、本実施例において、上記（１−６ａ）、（１−６ｂ）の順序は逆にしても良い。 In the present embodiment, the order of (1-6a) and (1-6b) may be reversed.

（１−７）更に、搬送ロボット３３を用いて、短冊基板Ｂ上の重り板５０Ａを取り出し、重り板５０Ａを真空容器１１から設置室４０へ搬送する。なお、重り板５０Ａやカバー板６０を真空容器１１へ搬送したり、真空容器１１から取り出したりする際には、例えば、基板支持台２１に支持ピンを設け、この支持ピンを用いて、重り板５０Ａやカバー板６０を上下動させて、搬送ロボット３３のアーム３４に乗せたり、アーム３４から取り上げたりすれば、重り板５０Ａやカバー板６０を真空容器１１へ搬送したり、真空容器１１から取り出したりすることができる。 (1-7) Further, using the transfer robot 33, the weight plate 50A on the strip substrate B is taken out, and the weight plate 50A is transferred from the vacuum vessel 11 to the installation chamber 40. When the weight plate 50A or the cover plate 60 is transported to the vacuum vessel 11 or taken out from the vacuum vessel 11, for example, a support pin is provided on the substrate support base 21, and the weight plate is used by using the support pin. The weight plate 50A and the cover plate 60 are transported to the vacuum vessel 11 and taken out from the vacuum vessel 11 by moving the 50A and the cover plate 60 up and down and placing them on the arm 34 of the transfer robot 33 or picking them up from the arm 34. Can be.

（１−８）重り板５０Ａを取り出した後、静電チャック２２に密着させた短冊基板Ｂに対して、成膜処理を行う。このとき、プラズマＰを維持した状態で、真空容器１１内のガスを成膜処理に用いるガス、例えば、ＳｉＨ₄、Ｎ₂、Ｏ₂などに変更すると共に、成膜条件に応じて、ＲＦパワーを変更したり、バイアスを印加したりすれば良い。 (1-8) After the weight plate 50A is taken out, a film forming process is performed on the strip substrate B brought into close contact with the electrostatic chuck 22. At this time, while the plasma P is maintained, the gas in the vacuum vessel 11 is changed to a gas used for the film forming process, for example, SiH ₄ , N ₂ , O _2, etc. May be changed or a bias may be applied.

このようにして、短冊基板Ｂの静電チャック２２への密着性を確保できるので、成膜処理中の短冊基板Ｂの温度を所望の温度に安定させて、成膜処理を行うことができる。 In this way, the adhesion of the strip substrate B to the electrostatic chuck 22 can be secured, so that the film formation process can be performed while the temperature of the strip substrate B during the film formation process is stabilized at a desired temperature.

（実施例２）
本実施例は、実施例１の図１に示した成膜処理装置において、実施例１で説明した重り板５０Ａ、カバー板６０に代えて、図７に示す重り板５０Ｂを用いるようにしたものである。つまり、成膜処理装置の構成は、実施例１の図１に示した成膜処理装置と同じ構成のもので良い。従って、ここでは、成膜処理装置の構成については、その説明を省略し、主に、図７に示す重り板５０Ｂの構成、図７に示す重り板５０Ｂを用いたときの短冊基板の処理方法について説明する。なお、図７（ａ）は、図２に示した重り板５０Ａの変形例となる重り板５０Ｂを示す上面図であり、図７（ｂ）は、重り板５０Ｂの下面図である。 (Example 2)
This embodiment uses the weight plate 50B shown in FIG. 7 in place of the weight plate 50A and the cover plate 60 described in the first embodiment in the film forming apparatus shown in FIG. 1 of the first embodiment. It is. That is, the configuration of the film forming apparatus may be the same as that of the film forming apparatus shown in FIG. Therefore, the description of the configuration of the film forming apparatus is omitted here, and the configuration of the weight plate 50B shown in FIG. 7 and the processing method of the strip substrate when using the weight plate 50B shown in FIG. Will be described. FIG. 7A is a top view showing a weight plate 50B as a modification of the weight plate 50A shown in FIG. 2, and FIG. 7B is a bottom view of the weight plate 50B.

重り板５０Ｂは、セラミックス系材料等から構成される円板状の板部材５１と、板部材５１の下面側に設けられると共に金属材料からなる複数の重り５４と、全ての重り５４を接地する接地線５５とを有する。つまり、実施例１で説明した重り板５０Ａに近い構成であるが、貫通孔５３は不要であり、重り５４が金属材料から構成されて、その表面は被覆されておらず、重り５４が全て接地線５５により接地されている。なお、重り５４は、配置された各列の短冊基板Ｂに対して複数設けても良く、例えば、中央及び端部に重り５４を設けても良い。 The weight plate 50B includes a disk-shaped plate member 51 made of a ceramic material, a plurality of weights 54 made of a metal material and grounded to ground all the weights 54. Line 55. In other words, the configuration is similar to that of the weight plate 50A described in the first embodiment, but the through hole 53 is unnecessary, the weight 54 is made of a metal material, the surface thereof is not covered, and all the weights 54 are grounded. Grounded by line 55. A plurality of weights 54 may be provided for each row of strip substrates B, for example, the weights 54 may be provided at the center and at the end.

又、本実施例において、重り板５０Ｂは、上述したカバー板６０の機能も兼ねており、プラズマ点火の際のＥＳＤを防止するものである。重り板５０Ｂの大きさは、少なくとも、静電チャック２２の上面に配置される短冊基板Ｂ全てを覆う大きさが良く、望ましくは、静電チャック２２の大きさより大きい方が良い。 In this embodiment, the weight plate 50B also functions as the cover plate 60 described above, and prevents ESD during plasma ignition. The size of the weight plate 50 </ b> B is sufficient to cover at least all the strip substrates B arranged on the upper surface of the electrostatic chuck 22, and preferably larger than the size of the electrostatic chuck 22.

そして、前述した図４（ａ）のように配列された複数の短冊基板Ｂに対し、重り５４は、各列の短冊基板Ｂの中央に位置するように、重り板５０Ｂの下面側に配置されており、本実施例でも、短冊基板Ｂの配列に対応して、３つの棒状の重り５４が配置されている。 Then, with respect to the plurality of strip substrates B arranged as shown in FIG. 4A, the weight 54 is disposed on the lower surface side of the weight plate 50B so as to be positioned at the center of the strip substrates B in each row. In this embodiment, three rod-like weights 54 are arranged corresponding to the arrangement of the strip substrates B.

次に、前述した図１、図３〜図６と共に、図７も参照して、本実施例の短冊基板の処理方法を説明する。 Next, the strip substrate processing method of this embodiment will be described with reference to FIG. 7 together with FIGS.

（２−１）成膜室１０において、真空容器１１の天井板１３を取り外して、真空容器１１を大気開放し、静電チャック２２上に短冊基板Ｂを手動で配置する。例えば、前述した手動配置用枠を静電チャック２２上に置いた後、各開口部内に短冊基板Ｂを各々配置し、その後、手動配置用枠を取り外せば、前述した図４（ａ）に示したように、所定の位置に複数の短冊基板Ｂが手動で配列して設置されることになる。このとき、短冊基板Ｂは、反っている場合には、前述した図４（ｂ）に示したように、反った凸側が上面になるように配置されている。 (2-1) In the film forming chamber 10, the ceiling plate 13 of the vacuum vessel 11 is removed, the vacuum vessel 11 is opened to the atmosphere, and the strip substrate B is manually placed on the electrostatic chuck 22. For example, after placing the above-described manual placement frame on the electrostatic chuck 22, each strip substrate B is placed in each opening, and then the manual placement frame is removed, as shown in FIG. 4 (a). As described above, a plurality of strip substrates B are manually arranged and installed at predetermined positions. At this time, when the strip substrate B is warped, the strip substrate B is arranged so that the warped convex side becomes the upper surface as shown in FIG.

（２−２）配置された複数の短冊基板Ｂの上に重り板５０Ｂを置く。このとき、前述した図５（ａ）と同様に、各重り５４の位置が各列の短冊基板Ｂの中央となるように、重り板５０Ｂを置く。これにより、前述した図５（ｂ）と同様に、重り５４が短冊基板Ｂの中央を静電チャック２２に押し付けて、短冊基板Ｂの反りを矯正することになる。 (2-2) The weight plate 50B is placed on the plurality of strip substrates B arranged. At this time, similarly to the above-described FIG. 5A, the weight plate 50B is placed so that the position of each weight 54 is at the center of the strip substrate B in each row. As a result, the weight 54 presses the center of the strip substrate B against the electrostatic chuck 22 and corrects the warp of the strip substrate B, as in FIG.

（２−３）重り板５０Ｂを短冊基板Ｂの上に置いた状態で、真空容器１１を天井板１３で閉鎖し、真空装置１４を用いて、真空容器１１の真空排気を行い、真空容器１１内を真空状態にする。 (2-3) With the weight plate 50B placed on the strip substrate B, the vacuum vessel 11 is closed with the ceiling plate 13, and the vacuum vessel 11 is evacuated using the vacuum device 14, and the vacuum vessel 11 The inside is evacuated.

（２−４）重り板５０Ｂを短冊基板Ｂの上に置いた状態で、静電電源２８から単電極２４に直流電圧を供給し、重り板５０Ｂにより反りを矯正した短冊基板Ｂを静電チャック２２で吸着して、短冊基板Ｂを静電チャック２２に密着させる。このとき、重り板５０Ｂの重り５４は接地線５５で接地されており、短冊基板Ｂは重り５４を経由して接地されるので、これにより、短冊基板Ｂが静電チャック２２に吸着されることになる。 (2-4) In a state where the weight plate 50B is placed on the strip substrate B, a DC voltage is supplied from the electrostatic power source 28 to the single electrode 24, and the strip substrate B whose warpage is corrected by the weight plate 50B is electrostatically chucked. By adsorbing at 22, the strip substrate B is brought into close contact with the electrostatic chuck 22. At this time, the weight 54 of the weight plate 50B is grounded by the ground wire 55, and the strip substrate B is grounded via the weight 54, whereby the strip substrate B is attracted to the electrostatic chuck 22. become.

なお、本実施例において、上記（２−３）、（２−４）の順序は逆にしても良い。 In this embodiment, the order of (2-3) and (2-4) may be reversed.

（２−５）重り板５０Ｂを短冊基板Ｂの上に置いた状態で、高周波アンテナ１５、整合器１６、高周波電源１７を用い、プラズマＰを点火する。このように、全ての短冊基板Ｂを覆うように、重り板５０Ｂを配置することにより、プラズマＰの点火時の短冊基板Ｂのプラズマダメージを低減することができる。このとき、プラズマＰの点火条件としては、数百Ｗ程度の低いＲＦパワーで、Ｎ₂やＡｒ等の不活性ガスを用いる。更に、比較的高い圧力（例えば、数百ｍＴｏｒｒ〜数千ｍＴｏｒｒ）でプラズマＰを点灯すると、プラズマＰがアンテナ１５に近いところに生成されるため、静電チャック２２に静電吸着された短冊基板Ｂ近傍のプラズマ密度をより小さい状態とすることができる。加えて、バイアスを短冊基板Ｂ側に印加しないようにすれば、なお良い。 (2-5) With the weight plate 50B placed on the strip substrate B, the plasma P is ignited using the high-frequency antenna 15, the matching unit 16, and the high-frequency power source 17. Thus, by arranging the weight plate 50B so as to cover all the strip substrates B, plasma damage of the strip substrate B at the time of ignition of the plasma P can be reduced. At this time, as an ignition condition of the plasma P, an inert gas such as N ₂ or Ar is used with a low RF power of about several hundred W. Further, when the plasma P is turned on at a relatively high pressure (for example, several hundred mTorr to several thousand mTorr), the plasma P is generated near the antenna 15, so that the strip substrate is electrostatically attracted to the electrostatic chuck 22. The plasma density in the vicinity of B can be made smaller. In addition, it is even better if no bias is applied to the strip substrate B side.

（２−６）プラズマＰが生成された状態で、搬送ロボット３３を用いて、短冊基板Ｂ上の重り板５０Ｂを取り出し、重り板５０Ｂを真空容器１１から設置室４０へ搬送する。 (2-6) With the plasma P being generated, the transport robot 33 is used to take out the weight plate 50B on the strip substrate B and transport the weight plate 50B from the vacuum vessel 11 to the installation chamber 40.

（２−７）重り板５０Ｂを取り出した後、静電チャック２２に密着させた短冊基板Ｂに対して、成膜処理を行う。このとき、プラズマＰを維持した状態で、真空容器１１内のガスを成膜処理に用いるガス、例えば、ＳｉＨ₄、Ｎ₂、Ｏ₂などに変更すると共に、成膜条件に応じて、ＲＦパワーを変更したり、バイアスを印加したりすれば良い。 (2-7) After the weight plate 50B is taken out, a film forming process is performed on the strip substrate B brought into close contact with the electrostatic chuck 22. At this time, while the plasma P is maintained, the gas in the vacuum vessel 11 is changed to a gas used for the film forming process, for example, SiH ₄ , N ₂ , O _2, etc. May be changed or a bias may be applied.

なお、本実施例でも、カバー板６０を用いるようにしても良く、その場合には、上記（２−４）の後、搬送ロボット３３を用い、短冊基板Ｂ上の重り板５０Ｂを取り出して、重り板５０Ｂを真空容器１１から設置室４０へ搬送し、その後、設置室４０から真空容器１１へカバー板６０を搬送する。このとき、搬送ロボット３３のアーム３４にカバー板６０を乗せた状態で、短冊基板Ｂの上方にカバー板６０を配置すれば、カバー板６０は、前述した図６（ａ）と略同様に、上方から見て、全ての短冊基板Ｂを覆うように配置され、そして、前述した図６（ｂ）と略同様に、側方から見て、短冊基板Ｂの上方に浮いたように配置される。カバー板６０は、全ての短冊基板Ｂを覆うように配置できれば、短冊基板Ｂの上に直接乗せるように配置しても良い。そして、上記（２−６）において、重り板５０Ｂの代わりに、カバー板６０を取り出すようにすればよい。 In this embodiment, the cover plate 60 may be used. In this case, after the above (2-4), the transport robot 33 is used to take out the weight plate 50B on the strip substrate B, and The weight plate 50B is transferred from the vacuum vessel 11 to the installation chamber 40, and then the cover plate 60 is transferred from the installation chamber 40 to the vacuum vessel 11. At this time, if the cover plate 60 is disposed above the strip substrate B with the cover plate 60 placed on the arm 34 of the transfer robot 33, the cover plate 60 is substantially the same as that shown in FIG. When viewed from above, it is disposed so as to cover all the strip substrates B, and is disposed so as to float above the strip substrate B when viewed from the side, in substantially the same manner as in FIG. . If the cover plate 60 can be disposed so as to cover all the strip substrates B, the cover plate 60 may be disposed directly on the strip substrate B. And in said (2-6), what is necessary is just to take out the cover board 60 instead of the weight board 50B.

本発明は、短冊基板に対して成膜やエッチング等のプラズマ処理を行う際に好適なものである。 The present invention is suitable for performing plasma processing such as film formation and etching on a strip substrate.

１０成膜室
１１真空容器
１４真空装置（真空手段）
２０制御装置（制御手段）
２２静電チャック
２４単電極
２８静電電源（電圧供給手段）
３０搬送室
３３搬送ロボット（搬送手段）
４０設置室
５０Ａ、５０Ｂ重り板
５１板部材
５２重り
５２ａ金属部
５２ｂ被覆部
５３貫通孔
５４重り
５５接地線
６０カバー板 DESCRIPTION OF SYMBOLS 10 Deposition chamber 11 Vacuum container 14 Vacuum apparatus (vacuum means)
20 Control device (control means)
22 Electrostatic chuck 24 Single electrode 28 Electrostatic power supply (voltage supply means)
30 Transfer chamber 33 Transfer robot (transfer means)
40 Installation chamber 50A, 50B Weight plate 51 Plate member 52 Weight 52a Metal portion 52b Cover portion 53 Through hole 54 Weight 55 Ground wire 60 Cover plate

Claims

A strip substrate processing apparatus for performing plasma processing on a strip substrate,
An electrostatic chuck that is provided inside the vacuum vessel and has the strip substrate disposed on the upper surface;
Voltage supply means for supplying an electrostatic adsorption voltage to a single electrode of the electrostatic chuck;
A weight plate having a weight in which a metal material is covered with an insulating material and a through hole; and
Vacuum means for evacuating the interior of the vacuum vessel;
A cover plate having a size covering all of the strip substrates disposed on the upper surface of the electrostatic chuck;
Plasma generating means for generating plasma inside the vacuum vessel;
Conveying means for conveying the weight plate and the cover plate;
Control means for controlling the voltage supply means, the vacuum means, the plasma generation means, and the transport means;
A strip substrate processing apparatus comprising:

The strip substrate processing apparatus according to claim 1,
The strip substrate processing apparatus, wherein the insulating material is polyimide or fluorine resin.

A strip substrate processing apparatus for performing plasma processing on a strip substrate,
An electrostatic chuck that is provided inside the vacuum vessel and has the strip substrate disposed on the upper surface;
Voltage supply means for supplying an electrostatic adsorption voltage to a single electrode of the electrostatic chuck;
A weight plate having a weight made of a metal material and a grounding wire for grounding the weight and having a size covering all the strip substrates disposed on the upper surface of the electrostatic chuck;
Vacuum means for evacuating the interior of the vacuum vessel;
Plasma generating means for generating plasma inside the vacuum vessel;
Conveying means for conveying the weight plate;
Control means for controlling the voltage supply means, the vacuum means, the plasma generation means, and the transport means;
A strip substrate processing apparatus comprising:

A strip substrate processing method for performing plasma processing on a strip substrate,
A vacuum vessel provided with an electrostatic chuck inside is opened to the atmosphere, and the strip substrate is disposed on the upper surface of the electrostatic chuck.
A weight plate having a weight in which a metal material is coated with an insulating material and a through hole is used, the weight is located at the center of the strip substrate disposed on the upper surface of the electrostatic chuck, and the strip is formed from the through hole. Place the weight plate on the strip substrate so that a part of the substrate is visible, and press the strip substrate against the electrostatic chuck,
Close the vacuum vessel and evacuate the inside of the vacuum vessel;
Using a cover plate having a size that covers all of the strip substrates disposed on the upper surface of the electrostatic chuck, the cover plate is disposed above the weight plate,
Generating plasma inside the vacuum vessel;
Supplying an electrostatic adsorption voltage to a single electrode of the electrostatic chuck, adhering the strip substrate pressed by the weight plate to the electrostatic chuck, and bringing the strip substrate into close contact with the electrostatic chuck,
Remove the cover plate from above the weight plate,
Remove the weight plate from the strip substrate,
A strip substrate processing method, wherein plasma processing is performed on the strip substrate in close contact with the electrostatic chuck.

In the processing method of the strip board | substrate of Claim 4,
The strip substrate processing method, wherein the insulating material is polyimide or fluorine resin.

A strip substrate processing method for performing plasma processing on a strip substrate,
A vacuum vessel provided with an electrostatic chuck inside is opened to the atmosphere, and the strip substrate is disposed on the upper surface of the electrostatic chuck.
A weight plate having a weight made of a metal material and a ground wire for grounding the weight and having a size covering all the strip substrates disposed on the upper surface of the electrostatic chuck is disposed on the upper surface of the electrostatic chuck. The weight plate is placed on the strip substrate so that the weight is located in the center of the strip substrate, and the strip substrate is pressed against the electrostatic chuck,
Closing the vacuum vessel;
The inside of the vacuum vessel is evacuated,
Supplying an electrostatic adsorption voltage to a single electrode of the electrostatic chuck, adhering the strip substrate pressed by the weight plate to the electrostatic chuck, and bringing the strip substrate into close contact with the electrostatic chuck,
Generating plasma inside the vacuum vessel;
Remove the weight plate from the strip substrate,
A strip substrate processing method, wherein plasma processing is performed on the strip substrate in close contact with the electrostatic chuck.

A strip substrate processing method for performing plasma processing on a strip substrate,
A vacuum vessel provided with an electrostatic chuck inside is opened to the atmosphere, and the strip substrate is disposed on the upper surface of the electrostatic chuck.
Using a weight plate having a weight made of a metal material and a ground wire for grounding the weight, the weight plate is arranged so that the weight is positioned in the center of the strip substrate disposed on the upper surface of the electrostatic chuck. Put on the strip substrate, press the strip substrate against the electrostatic chuck,
Closing the vacuum vessel;
The inside of the vacuum vessel is evacuated,
An electrostatic chucking voltage is supplied to a single electrode of the electrostatic chuck, the strip substrate pressed with the weight plate is attracted to the electrostatic chuck, and the strip substrate is brought into close contact with the electrostatic chuck,
Remove the weight plate from the strip substrate,
Using a cover plate having a size covering all of the strip substrates disposed on the upper surface of the electrostatic chuck, the cover plate is disposed above the strip substrate,
Generating plasma inside the vacuum vessel;
Take out the cover plate from above the strip substrate,
A strip substrate processing method, wherein plasma processing is performed on the strip substrate in close contact with the electrostatic chuck.