SG11201809720VA - Method for selecting template assembly, method for polishing workpiece, and template assembly - Google Patents

Method for selecting template assembly, method for polishing workpiece, and template assembly

Info

Publication number
SG11201809720VA
SG11201809720VA SG11201809720VA SG11201809720VA SG11201809720VA SG 11201809720V A SG11201809720V A SG 11201809720VA SG 11201809720V A SG11201809720V A SG 11201809720VA SG 11201809720V A SG11201809720V A SG 11201809720VA SG 11201809720V A SG11201809720V A SG 11201809720VA
Authority
SG
Singapore
Prior art keywords
template assembly
selecting
polishing workpiece
assembly
polishing
Prior art date
Application number
SG11201809720VA
Other languages
English (en)
Inventor
Kazuya Sato
Naoki Kamihama
Hiromasa Hashimoto
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of SG11201809720VA publication Critical patent/SG11201809720VA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Length Measuring Devices By Optical Means (AREA)
SG11201809720VA 2016-05-13 2017-03-14 Method for selecting template assembly, method for polishing workpiece, and template assembly SG11201809720VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016096794A JP6508123B2 (ja) 2016-05-13 2016-05-13 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ
PCT/JP2017/010203 WO2017195460A1 (ja) 2016-05-13 2017-03-14 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ

Publications (1)

Publication Number Publication Date
SG11201809720VA true SG11201809720VA (en) 2018-12-28

Family

ID=60266919

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201809720VA SG11201809720VA (en) 2016-05-13 2017-03-14 Method for selecting template assembly, method for polishing workpiece, and template assembly

Country Status (8)

Country Link
US (1) US11731236B2 (https=)
JP (1) JP6508123B2 (https=)
KR (1) KR102337600B1 (https=)
CN (1) CN109070308B (https=)
DE (1) DE112017002055B4 (https=)
SG (1) SG11201809720VA (https=)
TW (1) TWI722164B (https=)
WO (1) WO2017195460A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6508123B2 (ja) * 2016-05-13 2019-05-08 信越半導体株式会社 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ
JP7070502B2 (ja) * 2019-05-16 2022-05-18 信越半導体株式会社 測定装置および研磨ヘッドの選定方法ならびにウエーハの研磨方法
JP7388324B2 (ja) * 2019-12-05 2023-11-29 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置
CN114406896A (zh) * 2022-01-25 2022-04-29 上海江丰平芯电子科技有限公司 一种快速检测寿命的保持环及其使用方法
TW202543057A (zh) * 2024-02-27 2025-11-01 日商三菱綜合材料股份有限公司 晶圓保持用環構件

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JP2632738B2 (ja) * 1990-04-27 1997-07-23 信越半導体 株式会社 パッキングパッド、および半導体ウェーハの研磨方法
JP2000296461A (ja) * 1999-04-13 2000-10-24 Speedfam-Ipec Co Ltd バッキングパッド構造体
ES2325978T3 (es) * 2000-06-20 2009-09-28 Kurita Water Industries Ltd. Sistema de generacion de potencia de celula de combustible y metodo de funcionamiento.
US6709981B2 (en) * 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
JP3838341B2 (ja) * 2001-09-14 2006-10-25 信越半導体株式会社 ウェーハの形状評価方法及びウェーハ並びにウェーハの選別方法
KR20040031071A (ko) * 2001-09-28 2004-04-09 신에쯔 한도타이 가부시키가이샤 연마용 워크지지반, 워크의 연마장치 및 연마방법
TW545580U (en) * 2002-06-07 2003-08-01 Nanya Technology Corp CMP device of measuring apparatus with a notched size for measuring the guide ring of wafer edge
JP2007287787A (ja) * 2006-04-13 2007-11-01 Elpida Memory Inc 半導体装置の製造方法及び装置
JP5157148B2 (ja) * 2006-12-11 2013-03-06 ダイキン工業株式会社 圧縮機
US20080299882A1 (en) * 2007-05-30 2008-12-04 Nippon Seimitsu Denshi Co., Ltd. Retainer-ring of cmp (chemical mechanical polishing) machine
JP2008302464A (ja) * 2007-06-07 2008-12-18 Renesas Technology Corp 研磨装置およびそれを用いた半導体装置の製造方法
JP2009260142A (ja) * 2008-04-18 2009-11-05 Panasonic Corp ウェハ研磨装置及びウェハ研磨方法
KR20090124017A (ko) * 2008-05-29 2009-12-03 주식회사 동부하이텍 Ｃｍｐ 장치의 리테이너링
US8834230B2 (en) 2008-07-31 2014-09-16 Shin-Etsu Handotai Co., Ltd. Wafer polishing method and double-side polishing apparatus
JP2010247254A (ja) * 2009-04-13 2010-11-04 Shin Etsu Handotai Co Ltd 研磨ヘッドの製造方法及び研磨装置
JP5504901B2 (ja) * 2010-01-13 2014-05-28 株式会社Ｓｕｍｃｏ 研磨パッドの形状修正方法
JP5303491B2 (ja) * 2010-02-19 2013-10-02 信越半導体株式会社 研磨ヘッド及び研磨装置
JP2013004928A (ja) * 2011-06-21 2013-01-07 Shin Etsu Handotai Co Ltd 研磨ヘッド、研磨装置及びワークの研磨方法
CN103619538A (zh) * 2011-06-29 2014-03-05 信越半导体株式会社 研磨头及研磨装置
JP5807580B2 (ja) * 2012-02-15 2015-11-10 信越半導体株式会社 研磨ヘッド及び研磨装置
JP5976522B2 (ja) * 2012-05-31 2016-08-23 株式会社荏原製作所 研磨装置および研磨方法
JP5821883B2 (ja) * 2013-03-22 2015-11-24 信越半導体株式会社 テンプレートアセンブリ及びテンプレートアセンブリの製造方法
JP5955271B2 (ja) * 2013-06-04 2016-07-20 信越半導体株式会社 研磨ヘッドの製造方法
JP6344950B2 (ja) * 2014-03-31 2018-06-20 株式会社荏原製作所 研磨装置及び研磨方法
JP2015218440A (ja) 2014-05-14 2015-12-07 住友林業株式会社 複数階を有する建物内の壁構造、および建物
JP6393127B2 (ja) * 2014-09-10 2018-09-19 丸石産業株式会社 保持パッド
JP6394569B2 (ja) * 2015-11-06 2018-09-26 信越半導体株式会社 ウェーハの研磨方法及び研磨装置
JP6508123B2 (ja) * 2016-05-13 2019-05-08 信越半導体株式会社 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ

Also Published As

Publication number Publication date
TWI722164B (zh) 2021-03-21
TW201805115A (zh) 2018-02-16
CN109070308B (zh) 2021-01-12
US20190126431A1 (en) 2019-05-02
JP6508123B2 (ja) 2019-05-08
KR20190002506A (ko) 2019-01-08
DE112017002055B4 (de) 2024-06-06
US11731236B2 (en) 2023-08-22
JP2017202556A (ja) 2017-11-16
KR102337600B1 (ko) 2021-12-10
DE112017002055T5 (de) 2018-12-27
CN109070308A (zh) 2018-12-21
WO2017195460A1 (ja) 2017-11-16

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