JP6508123B2 - テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ - Google Patents

テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ Download PDF

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Publication number
JP6508123B2
JP6508123B2 JP2016096794A JP2016096794A JP6508123B2 JP 6508123 B2 JP6508123 B2 JP 6508123B2 JP 2016096794 A JP2016096794 A JP 2016096794A JP 2016096794 A JP2016096794 A JP 2016096794A JP 6508123 B2 JP6508123 B2 JP 6508123B2
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Japan
Prior art keywords
template
template assembly
flatness
outer diameter
polishing
Prior art date
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JP2016096794A
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English (en)
Japanese (ja)
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JP2017202556A (ja
JP2017202556A5 (https=
Inventor
佐藤　一弥
一弥 佐藤
直紀 上▲濱▼
直紀 上▲濱▼
浩昌 橋本
浩昌 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2016096794A priority Critical patent/JP6508123B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to DE112017002055.7T priority patent/DE112017002055B4/de
Priority to CN201780026381.2A priority patent/CN109070308B/zh
Priority to SG11201809720VA priority patent/SG11201809720VA/en
Priority to PCT/JP2017/010203 priority patent/WO2017195460A1/ja
Priority to US16/094,085 priority patent/US11731236B2/en
Priority to KR1020187031793A priority patent/KR102337600B1/ko
Priority to TW106111464A priority patent/TWI722164B/zh
Publication of JP2017202556A publication Critical patent/JP2017202556A/ja
Publication of JP2017202556A5 publication Critical patent/JP2017202556A5/ja
Application granted granted Critical
Publication of JP6508123B2 publication Critical patent/JP6508123B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2016096794A 2016-05-13 2016-05-13 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ Active JP6508123B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2016096794A JP6508123B2 (ja) 2016-05-13 2016-05-13 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ
CN201780026381.2A CN109070308B (zh) 2016-05-13 2017-03-14 模板组件的选别方法及工件的研磨方法以及模板组件
SG11201809720VA SG11201809720VA (en) 2016-05-13 2017-03-14 Method for selecting template assembly, method for polishing workpiece, and template assembly
PCT/JP2017/010203 WO2017195460A1 (ja) 2016-05-13 2017-03-14 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ
DE112017002055.7T DE112017002055B4 (de) 2016-05-13 2017-03-14 Verfahren zum Auswählen einer Schablonenanordnung, Verfahren zum Polieren eines Werkstücks und Schablonenanordnung
US16/094,085 US11731236B2 (en) 2016-05-13 2017-03-14 Method for selecting template assembly, method for polishing workpiece, and template assembly
KR1020187031793A KR102337600B1 (ko) 2016-05-13 2017-03-14 템플레이트 어셈블리의 선별방법과 워크의 연마방법 및 템플레이트 어셈블리
TW106111464A TWI722164B (zh) 2016-05-13 2017-04-06 模板組件的選別方法以及工件的研磨方法及模板組件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016096794A JP6508123B2 (ja) 2016-05-13 2016-05-13 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ

Publications (3)

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JP2017202556A JP2017202556A (ja) 2017-11-16
JP2017202556A5 JP2017202556A5 (https=) 2018-11-22
JP6508123B2 true JP6508123B2 (ja) 2019-05-08

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JP2016096794A Active JP6508123B2 (ja) 2016-05-13 2016-05-13 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ

Country Status (8)

Country Link
US (1) US11731236B2 (https=)
JP (1) JP6508123B2 (https=)
KR (1) KR102337600B1 (https=)
CN (1) CN109070308B (https=)
DE (1) DE112017002055B4 (https=)
SG (1) SG11201809720VA (https=)
TW (1) TWI722164B (https=)
WO (1) WO2017195460A1 (https=)

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* Cited by examiner, † Cited by third party
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JP6508123B2 (ja) * 2016-05-13 2019-05-08 信越半導体株式会社 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ
JP7070502B2 (ja) * 2019-05-16 2022-05-18 信越半導体株式会社 測定装置および研磨ヘッドの選定方法ならびにウエーハの研磨方法
JP7388324B2 (ja) * 2019-12-05 2023-11-29 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置
CN114406896A (zh) * 2022-01-25 2022-04-29 上海江丰平芯电子科技有限公司 一种快速检测寿命的保持环及其使用方法
TW202543057A (zh) * 2024-02-27 2025-11-01 日商三菱綜合材料股份有限公司 晶圓保持用環構件

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JP2632738B2 (ja) * 1990-04-27 1997-07-23 信越半導体 株式会社 パッキングパッド、および半導体ウェーハの研磨方法
JP2000296461A (ja) * 1999-04-13 2000-10-24 Speedfam-Ipec Co Ltd バッキングパッド構造体
ES2325978T3 (es) * 2000-06-20 2009-09-28 Kurita Water Industries Ltd. Sistema de generacion de potencia de celula de combustible y metodo de funcionamiento.
US6709981B2 (en) * 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
JP3838341B2 (ja) * 2001-09-14 2006-10-25 信越半導体株式会社 ウェーハの形状評価方法及びウェーハ並びにウェーハの選別方法
KR20040031071A (ko) * 2001-09-28 2004-04-09 신에쯔 한도타이 가부시키가이샤 연마용 워크지지반, 워크의 연마장치 및 연마방법
TW545580U (en) * 2002-06-07 2003-08-01 Nanya Technology Corp CMP device of measuring apparatus with a notched size for measuring the guide ring of wafer edge
JP2007287787A (ja) * 2006-04-13 2007-11-01 Elpida Memory Inc 半導体装置の製造方法及び装置
JP5157148B2 (ja) * 2006-12-11 2013-03-06 ダイキン工業株式会社 圧縮機
US20080299882A1 (en) * 2007-05-30 2008-12-04 Nippon Seimitsu Denshi Co., Ltd. Retainer-ring of cmp (chemical mechanical polishing) machine
JP2008302464A (ja) * 2007-06-07 2008-12-18 Renesas Technology Corp 研磨装置およびそれを用いた半導体装置の製造方法
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JP2010247254A (ja) * 2009-04-13 2010-11-04 Shin Etsu Handotai Co Ltd 研磨ヘッドの製造方法及び研磨装置
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JP5976522B2 (ja) * 2012-05-31 2016-08-23 株式会社荏原製作所 研磨装置および研磨方法
JP5821883B2 (ja) * 2013-03-22 2015-11-24 信越半導体株式会社 テンプレートアセンブリ及びテンプレートアセンブリの製造方法
JP5955271B2 (ja) * 2013-06-04 2016-07-20 信越半導体株式会社 研磨ヘッドの製造方法
JP6344950B2 (ja) * 2014-03-31 2018-06-20 株式会社荏原製作所 研磨装置及び研磨方法
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JP6508123B2 (ja) * 2016-05-13 2019-05-08 信越半導体株式会社 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ

Also Published As

Publication number Publication date
TWI722164B (zh) 2021-03-21
TW201805115A (zh) 2018-02-16
CN109070308B (zh) 2021-01-12
SG11201809720VA (en) 2018-12-28
US20190126431A1 (en) 2019-05-02
KR20190002506A (ko) 2019-01-08
DE112017002055B4 (de) 2024-06-06
US11731236B2 (en) 2023-08-22
JP2017202556A (ja) 2017-11-16
KR102337600B1 (ko) 2021-12-10
DE112017002055T5 (de) 2018-12-27
CN109070308A (zh) 2018-12-21
WO2017195460A1 (ja) 2017-11-16

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