TWI722164B - 模板組件的選別方法以及工件的研磨方法及模板組件 - Google Patents

模板組件的選別方法以及工件的研磨方法及模板組件 Download PDF

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Publication number
TWI722164B
TWI722164B TW106111464A TW106111464A TWI722164B TW I722164 B TWI722164 B TW I722164B TW 106111464 A TW106111464 A TW 106111464A TW 106111464 A TW106111464 A TW 106111464A TW I722164 B TWI722164 B TW I722164B
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TW
Taiwan
Prior art keywords
template
workpiece
retaining ring
ring
flatness
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TW106111464A
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English (en)
Chinese (zh)
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TW201805115A (zh
Inventor
佐藤一彌
上濱直紀
橋本浩昌
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日商信越半導體股份有限公司
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Publication of TW201805115A publication Critical patent/TW201805115A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW106111464A 2016-05-13 2017-04-06 模板組件的選別方法以及工件的研磨方法及模板組件 TWI722164B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-096794 2016-05-13
JP2016096794A JP6508123B2 (ja) 2016-05-13 2016-05-13 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ

Publications (2)

Publication Number Publication Date
TW201805115A TW201805115A (zh) 2018-02-16
TWI722164B true TWI722164B (zh) 2021-03-21

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Family Applications (1)

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TW106111464A TWI722164B (zh) 2016-05-13 2017-04-06 模板組件的選別方法以及工件的研磨方法及模板組件

Country Status (8)

Country Link
US (1) US11731236B2 (https=)
JP (1) JP6508123B2 (https=)
KR (1) KR102337600B1 (https=)
CN (1) CN109070308B (https=)
DE (1) DE112017002055B4 (https=)
SG (1) SG11201809720VA (https=)
TW (1) TWI722164B (https=)
WO (1) WO2017195460A1 (https=)

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* Cited by examiner, † Cited by third party
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JP6508123B2 (ja) * 2016-05-13 2019-05-08 信越半導体株式会社 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ
JP7070502B2 (ja) * 2019-05-16 2022-05-18 信越半導体株式会社 測定装置および研磨ヘッドの選定方法ならびにウエーハの研磨方法
JP7388324B2 (ja) * 2019-12-05 2023-11-29 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置
CN114406896A (zh) * 2022-01-25 2022-04-29 上海江丰平芯电子科技有限公司 一种快速检测寿命的保持环及其使用方法
TW202543057A (zh) * 2024-02-27 2025-11-01 日商三菱綜合材料股份有限公司 晶圓保持用環構件

Citations (8)

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TW545580U (en) * 2002-06-07 2003-08-01 Nanya Technology Corp CMP device of measuring apparatus with a notched size for measuring the guide ring of wafer edge
JP2009260142A (ja) * 2008-04-18 2009-11-05 Panasonic Corp ウェハ研磨装置及びウェハ研磨方法
TW201318767A (zh) * 2011-06-29 2013-05-16 信越半導體股份有限公司 研磨頭及研磨裝置
TW201321130A (zh) * 2011-06-21 2013-06-01 信越半導體股份有限公司 研磨頭、研磨裝置及工件的研磨方法
TW201505761A (zh) * 2013-03-22 2015-02-16 Shinetsu Handotai Kk 模板組件及模板組件的製造方法
TW201520000A (zh) * 2013-06-04 2015-06-01 Shinetsu Handotai Kk 硏磨頭的製造方法及硏磨裝置
TW201540422A (zh) * 2014-03-31 2015-11-01 Ebara Corp 研磨裝置及研磨方法
TW201609309A (zh) * 2014-09-10 2016-03-16 丸石產業股份有限公司 保持墊片

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JP2000296461A (ja) * 1999-04-13 2000-10-24 Speedfam-Ipec Co Ltd バッキングパッド構造体
ES2325978T3 (es) * 2000-06-20 2009-09-28 Kurita Water Industries Ltd. Sistema de generacion de potencia de celula de combustible y metodo de funcionamiento.
US6709981B2 (en) * 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
JP3838341B2 (ja) * 2001-09-14 2006-10-25 信越半導体株式会社 ウェーハの形状評価方法及びウェーハ並びにウェーハの選別方法
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JP6508123B2 (ja) * 2016-05-13 2019-05-08 信越半導体株式会社 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW545580U (en) * 2002-06-07 2003-08-01 Nanya Technology Corp CMP device of measuring apparatus with a notched size for measuring the guide ring of wafer edge
JP2009260142A (ja) * 2008-04-18 2009-11-05 Panasonic Corp ウェハ研磨装置及びウェハ研磨方法
TW201321130A (zh) * 2011-06-21 2013-06-01 信越半導體股份有限公司 研磨頭、研磨裝置及工件的研磨方法
TW201318767A (zh) * 2011-06-29 2013-05-16 信越半導體股份有限公司 研磨頭及研磨裝置
TW201505761A (zh) * 2013-03-22 2015-02-16 Shinetsu Handotai Kk 模板組件及模板組件的製造方法
TW201520000A (zh) * 2013-06-04 2015-06-01 Shinetsu Handotai Kk 硏磨頭的製造方法及硏磨裝置
TW201540422A (zh) * 2014-03-31 2015-11-01 Ebara Corp 研磨裝置及研磨方法
TW201609309A (zh) * 2014-09-10 2016-03-16 丸石產業股份有限公司 保持墊片

Also Published As

Publication number Publication date
TW201805115A (zh) 2018-02-16
CN109070308B (zh) 2021-01-12
SG11201809720VA (en) 2018-12-28
US20190126431A1 (en) 2019-05-02
JP6508123B2 (ja) 2019-05-08
KR20190002506A (ko) 2019-01-08
DE112017002055B4 (de) 2024-06-06
US11731236B2 (en) 2023-08-22
JP2017202556A (ja) 2017-11-16
KR102337600B1 (ko) 2021-12-10
DE112017002055T5 (de) 2018-12-27
CN109070308A (zh) 2018-12-21
WO2017195460A1 (ja) 2017-11-16

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