SG11201807420YA - Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications - Google Patents

Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

Info

Publication number
SG11201807420YA
SG11201807420YA SG11201807420YA SG11201807420YA SG11201807420YA SG 11201807420Y A SG11201807420Y A SG 11201807420YA SG 11201807420Y A SG11201807420Y A SG 11201807420YA SG 11201807420Y A SG11201807420Y A SG 11201807420YA SG 11201807420Y A SG11201807420Y A SG 11201807420YA
Authority
SG
Singapore
Prior art keywords
international
california
enclosure
substrate
milpitas
Prior art date
Application number
SG11201807420YA
Other languages
English (en)
Inventor
Mei Sun
Earl Jensen
Jing Zhou
Ran Liu
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201807420YA publication Critical patent/SG11201807420YA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

Landscapes

  • Arrangements For Transmission Of Measured Signals (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
SG11201807420YA 2016-06-15 2017-06-14 Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications SG11201807420YA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662350688P 2016-06-15 2016-06-15
US15/277,792 US10460966B2 (en) 2016-06-15 2016-09-27 Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
PCT/US2017/037548 WO2017218701A1 (en) 2016-06-15 2017-06-14 Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

Publications (1)

Publication Number Publication Date
SG11201807420YA true SG11201807420YA (en) 2018-12-28

Family

ID=60661415

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201807420YA SG11201807420YA (en) 2016-06-15 2017-06-14 Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

Country Status (7)

Country Link
US (2) US10460966B2 (https=)
JP (2) JP6920357B2 (https=)
KR (1) KR102446462B1 (https=)
CN (2) CN112820718B (https=)
SG (1) SG11201807420YA (https=)
TW (1) TWI751172B (https=)
WO (1) WO2017218701A1 (https=)

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US20180366354A1 (en) 2017-06-19 2018-12-20 Applied Materials, Inc. In-situ semiconductor processing chamber temperature apparatus
US10900843B2 (en) * 2018-06-05 2021-01-26 Kla Corporation In-situ temperature sensing substrate, system, and method
US10794681B2 (en) * 2018-09-04 2020-10-06 Applied Materials, Inc. Long range capacitive gap measurement in a wafer form sensor system
US11315811B2 (en) 2018-09-06 2022-04-26 Kla Corporation Process temperature measurement device fabrication techniques and methods of calibration and data interpolation of the same
KR102136466B1 (ko) * 2018-09-11 2020-07-22 주식회사 이큐셀 고온 공정 진단이 가능한 웨이퍼 센서
US11054317B2 (en) * 2018-09-28 2021-07-06 Applied Materials, Inc. Method and apparatus for direct measurement of chucking force on an electrostatic chuck
US12074044B2 (en) * 2018-11-14 2024-08-27 Cyberoptics Corporation Wafer-like sensor
US11636948B2 (en) 2019-05-21 2023-04-25 Q Med Innovations, Inc. Instrument kit tracking system
KR102438344B1 (ko) * 2019-10-14 2022-09-01 세메스 주식회사 웨이퍼형 센서 유닛 및 웨이퍼형 센서 유닛의 제조 방법
KR102382971B1 (ko) * 2019-11-05 2022-04-05 이트론 주식회사 반도체 공정 진단을 위한 온도 센서 장치 및 이의 제조 방법
US11668601B2 (en) 2020-02-24 2023-06-06 Kla Corporation Instrumented substrate apparatus
US11589474B2 (en) 2020-06-02 2023-02-21 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source
US11924972B2 (en) 2020-06-02 2024-03-05 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source
US20220223441A1 (en) * 2021-01-08 2022-07-14 Kla Corporation Process condition sensing apparatus
US11688614B2 (en) * 2021-04-28 2023-06-27 Kla Corporation Mitigating thermal expansion mismatch in temperature probe construction apparatus and method
US12535363B2 (en) * 2022-07-28 2026-01-27 Applied Materials, Inc. Radical sensor substrate
CN115399913B (zh) * 2022-09-16 2024-05-03 复旦大学附属中山医院 一种高灵敏度柔性人工智能皮肤及其制备方法

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US10460966B2 (en) 2016-06-15 2019-10-29 Kla-Tencor Corporation Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

Also Published As

Publication number Publication date
TW201810479A (zh) 2018-03-16
CN109314066A (zh) 2019-02-05
US11823925B2 (en) 2023-11-21
US20200203200A1 (en) 2020-06-25
JP7194786B2 (ja) 2022-12-22
TWI751172B (zh) 2022-01-01
CN112820718B (zh) 2024-12-20
CN112820718A (zh) 2021-05-18
US10460966B2 (en) 2019-10-29
JP2019523884A (ja) 2019-08-29
CN109314066B (zh) 2021-01-15
WO2017218701A1 (en) 2017-12-21
KR20190008578A (ko) 2019-01-24
KR102446462B1 (ko) 2022-09-21
JP6920357B2 (ja) 2021-08-18
US20170365495A1 (en) 2017-12-21
JP2021170034A (ja) 2021-10-28

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