SG11201807197PA - Support for a semiconductor structure - Google Patents
Support for a semiconductor structureInfo
- Publication number
- SG11201807197PA SG11201807197PA SG11201807197PA SG11201807197PA SG11201807197PA SG 11201807197P A SG11201807197P A SG 11201807197PA SG 11201807197P A SG11201807197P A SG 11201807197PA SG 11201807197P A SG11201807197P A SG 11201807197PA SG 11201807197P A SG11201807197P A SG 11201807197PA
- Authority
- SG
- Singapore
- Prior art keywords
- layer
- support
- semiconductor structure
- base substrate
- polycrystalline
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 229910001339 C alloy Inorganic materials 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02444—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Silicon Compounds (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1651642A FR3048306B1 (fr) | 2016-02-26 | 2016-02-26 | Support pour une structure semi-conductrice |
PCT/FR2017/050400 WO2017144821A1 (fr) | 2016-02-26 | 2017-02-23 | Support pour une structure semi-conductrice |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201807197PA true SG11201807197PA (en) | 2018-09-27 |
Family
ID=55650590
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201913216XA SG10201913216XA (en) | 2016-02-26 | 2017-02-23 | Support for a semiconductor structure |
SG11201807197PA SG11201807197PA (en) | 2016-02-26 | 2017-02-23 | Support for a semiconductor structure |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201913216XA SG10201913216XA (en) | 2016-02-26 | 2017-02-23 | Support for a semiconductor structure |
Country Status (9)
Country | Link |
---|---|
US (1) | US11251265B2 (zh) |
EP (1) | EP3420583B1 (zh) |
JP (1) | JP6981629B2 (zh) |
KR (1) | KR20190013696A (zh) |
CN (1) | CN109155276B (zh) |
FR (1) | FR3048306B1 (zh) |
SG (2) | SG10201913216XA (zh) |
TW (1) | TWI787172B (zh) |
WO (1) | WO2017144821A1 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017175799A1 (ja) * | 2016-04-05 | 2017-10-12 | 株式会社サイコックス | 多結晶SiC基板およびその製造方法 |
FR3068506B1 (fr) * | 2017-06-30 | 2020-02-21 | Soitec | Procede pour preparer un support pour une structure semi-conductrice |
WO2020008116A1 (fr) * | 2018-07-05 | 2020-01-09 | Soitec | Substrat pour un dispositif integre radioafrequence et son procede de fabrication |
FR3091011B1 (fr) * | 2018-12-21 | 2022-08-05 | Soitec Silicon On Insulator | Substrat de type semi-conducteur sur isolant pour des applications radiofréquences |
FR3104318B1 (fr) | 2019-12-05 | 2023-03-03 | Soitec Silicon On Insulator | Procédé de formation d'un support de manipulation à haute résistivité pour substrat composite |
JP2021190660A (ja) * | 2020-06-04 | 2021-12-13 | 株式会社Sumco | 貼り合わせウェーハ用の支持基板 |
CN111979524B (zh) * | 2020-08-19 | 2021-12-14 | 福建省晋华集成电路有限公司 | 一种多晶硅层形成方法、多晶硅层以及半导体结构 |
FR3116151A1 (fr) | 2020-11-10 | 2022-05-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation d’une structure de piegeage d’un substrat utile |
FR3117668B1 (fr) | 2020-12-16 | 2022-12-23 | Commissariat Energie Atomique | Structure amelioree de substrat rf et procede de realisation |
FR3134239A1 (fr) * | 2022-03-30 | 2023-10-06 | Soitec | Substrat piézoélectrique sur isolant (POI) et procédé de fabrication d’un substrat piézoélectrique sur isolant (POI) |
WO2024115410A1 (fr) | 2022-11-29 | 2024-06-06 | Soitec | Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes. |
WO2024115411A1 (fr) | 2022-11-29 | 2024-06-06 | Soitec | Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes |
WO2024115414A1 (fr) | 2022-11-29 | 2024-06-06 | Soitec | Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0864851A (ja) | 1994-06-14 | 1996-03-08 | Sanyo Electric Co Ltd | 光起電力素子及びその製造方法 |
JP2907128B2 (ja) * | 1996-07-01 | 1999-06-21 | 日本電気株式会社 | 電界効果型トランジスタ及びその製造方法 |
CN1856873A (zh) * | 2003-09-26 | 2006-11-01 | 卢万天主教大学 | 制造具有降低的欧姆损耗的多层半导体结构的方法 |
US7202124B2 (en) * | 2004-10-01 | 2007-04-10 | Massachusetts Institute Of Technology | Strained gettering layers for semiconductor processes |
KR101436313B1 (ko) * | 2007-07-04 | 2014-09-01 | 신에쯔 한도타이 가부시키가이샤 | 다층 실리콘 웨이퍼의 제작법 |
FR2953640B1 (fr) * | 2009-12-04 | 2012-02-10 | S O I Tec Silicon On Insulator Tech | Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante |
US8536021B2 (en) * | 2010-12-24 | 2013-09-17 | Io Semiconductor, Inc. | Trap rich layer formation techniques for semiconductor devices |
US8741739B2 (en) * | 2012-01-03 | 2014-06-03 | International Business Machines Corporation | High resistivity silicon-on-insulator substrate and method of forming |
FR2999801B1 (fr) * | 2012-12-14 | 2014-12-26 | Soitec Silicon On Insulator | Procede de fabrication d'une structure |
US8951896B2 (en) * | 2013-06-28 | 2015-02-10 | International Business Machines Corporation | High linearity SOI wafer for low-distortion circuit applications |
US9768056B2 (en) * | 2013-10-31 | 2017-09-19 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition |
US9853133B2 (en) * | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
WO2017142849A1 (en) * | 2016-02-19 | 2017-08-24 | Sunedison Semiconductor Limited | Semiconductor on insulator structure comprising a buried high resistivity layer |
CN108022934A (zh) * | 2016-11-01 | 2018-05-11 | 沈阳硅基科技有限公司 | 一种薄膜的制备方法 |
US10468486B2 (en) * | 2017-10-30 | 2019-11-05 | Taiwan Semiconductor Manufacturing Company Ltd. | SOI substrate, semiconductor device and method for manufacturing the same |
-
2016
- 2016-02-26 FR FR1651642A patent/FR3048306B1/fr active Active
-
2017
- 2017-02-23 US US16/080,279 patent/US11251265B2/en active Active
- 2017-02-23 KR KR1020187025017A patent/KR20190013696A/ko not_active Application Discontinuation
- 2017-02-23 JP JP2018544865A patent/JP6981629B2/ja active Active
- 2017-02-23 SG SG10201913216XA patent/SG10201913216XA/en unknown
- 2017-02-23 EP EP17710350.4A patent/EP3420583B1/fr active Active
- 2017-02-23 SG SG11201807197PA patent/SG11201807197PA/en unknown
- 2017-02-23 WO PCT/FR2017/050400 patent/WO2017144821A1/fr active Application Filing
- 2017-02-23 CN CN201780013336.3A patent/CN109155276B/zh active Active
- 2017-02-24 TW TW106106332A patent/TWI787172B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI787172B (zh) | 2022-12-21 |
TW201742108A (zh) | 2017-12-01 |
CN109155276B (zh) | 2023-01-17 |
WO2017144821A1 (fr) | 2017-08-31 |
JP6981629B2 (ja) | 2021-12-15 |
FR3048306A1 (fr) | 2017-09-01 |
KR20190013696A (ko) | 2019-02-11 |
FR3048306B1 (fr) | 2018-03-16 |
SG10201913216XA (en) | 2020-02-27 |
EP3420583A1 (fr) | 2019-01-02 |
EP3420583B1 (fr) | 2021-08-04 |
US20190058031A1 (en) | 2019-02-21 |
CN109155276A (zh) | 2019-01-04 |
US11251265B2 (en) | 2022-02-15 |
JP2019512870A (ja) | 2019-05-16 |
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