SG11201804356TA - Method For Producing A Semiconductor Wafer With Epitaxial Layer In A Deposition Chamber, Apparatus For Producing A Semiconductor Wafer With Epitaxial Layer, And Semiconductor Wafer With Epitaxial Layer - Google Patents

Method For Producing A Semiconductor Wafer With Epitaxial Layer In A Deposition Chamber, Apparatus For Producing A Semiconductor Wafer With Epitaxial Layer, And Semiconductor Wafer With Epitaxial Layer

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Publication number
SG11201804356TA
SG11201804356TA SG11201804356TA SG11201804356TA SG11201804356TA SG 11201804356T A SG11201804356T A SG 11201804356TA SG 11201804356T A SG11201804356T A SG 11201804356TA SG 11201804356T A SG11201804356T A SG 11201804356TA SG 11201804356T A SG11201804356T A SG 11201804356TA
Authority
SG
Singapore
Prior art keywords
epitaxial layer
semiconductor wafer
producing
susceptor
deposition chamber
Prior art date
Application number
SG11201804356TA
Other languages
English (en)
Inventor
Patrick Moos
Reinhard Schauer
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11201804356TA publication Critical patent/SG11201804356TA/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
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    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
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    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67383—Closed carriers characterised by substrate supports
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
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    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201804356TA 2015-12-01 2016-11-24 Method For Producing A Semiconductor Wafer With Epitaxial Layer In A Deposition Chamber, Apparatus For Producing A Semiconductor Wafer With Epitaxial Layer, And Semiconductor Wafer With Epitaxial Layer SG11201804356TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015223807.5A DE102015223807A1 (de) 2015-12-01 2015-12-01 Verfahren zur Herstellung einer Halbleiterscheibe mit epitaktischer Schicht in einer Abscheidekammer, Vorrichtung zur Herstellung einer Halbleiterscheibe mit epitaktischer Schicht und Halbleiterscheibe mit epitaktischer Schicht
PCT/EP2016/078618 WO2017093102A1 (de) 2015-12-01 2016-11-24 Verfahren zur herstellung einer halbleiterscheibe mit epitaktischer schicht in einer abscheidekammer, vorrichtung zur herstellung einer halbleiterscheibe mit epitaktischer schicht und halbleiterscheibe mit epitaktischer schicht

Publications (1)

Publication Number Publication Date
SG11201804356TA true SG11201804356TA (en) 2018-06-28

Family

ID=57394566

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201804356TA SG11201804356TA (en) 2015-12-01 2016-11-24 Method For Producing A Semiconductor Wafer With Epitaxial Layer In A Deposition Chamber, Apparatus For Producing A Semiconductor Wafer With Epitaxial Layer, And Semiconductor Wafer With Epitaxial Layer

Country Status (9)

Country Link
US (1) US10597795B2 (de)
EP (1) EP3384073B1 (de)
JP (1) JP6883581B2 (de)
KR (1) KR102073498B1 (de)
CN (2) CN115012030A (de)
DE (1) DE102015223807A1 (de)
SG (1) SG11201804356TA (de)
TW (1) TWI638387B (de)
WO (1) WO2017093102A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10755955B2 (en) 2018-02-12 2020-08-25 Applied Materials, Inc. Substrate transfer mechanism to reduce back-side substrate contact
JP7003905B2 (ja) * 2018-12-27 2022-01-21 株式会社Sumco 気相成長装置
EP3905311A1 (de) 2020-04-27 2021-11-03 Siltronic AG Verfahren und vorrichtung zum abscheiden einer epitaktischen schicht auf einer substratscheibe aus halbleitermaterial
CN111613512B (zh) * 2020-06-22 2022-10-21 北京北方华创微电子装备有限公司 半导体设备及其工艺腔室

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643719A (en) * 1979-09-18 1981-04-22 Fujitsu Ltd Vapor-phase epitaxial growth
US5997588A (en) 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
TW372926B (en) 1996-04-04 1999-11-01 Applied Materials Inc Method and system of processing semiconductor workpieces and robot for use in said system
US6245152B1 (en) * 1996-07-05 2001-06-12 Super Silicon Crystal Research Institute Corp. Method and apparatus for producing epitaxial wafer
JPH1022226A (ja) * 1996-07-05 1998-01-23 Super Silicon Kenkyusho:Kk エピタキシャルウエハ製造方法及び装置
DE19630932A1 (de) * 1996-07-31 1998-02-05 Wacker Siltronic Halbleitermat Träger für eine Halbleiterscheibe und Verwendung des Trägers
US6293749B1 (en) 1997-11-21 2001-09-25 Asm America, Inc. Substrate transfer system for semiconductor processing equipment
DE19847101C1 (de) 1998-10-13 2000-05-18 Wacker Siltronic Halbleitermat CVD-Reaktor und Verfahren zur Herstellung einer mit einer epitaktischen Schicht versehenen Halbleiterscheibe
JP2001313329A (ja) * 2000-04-28 2001-11-09 Applied Materials Inc 半導体製造装置におけるウェハ支持装置
US6825487B2 (en) 2002-07-30 2004-11-30 Seh America, Inc. Method for isolation of wafer support-related crystal defects
US6916374B2 (en) * 2002-10-08 2005-07-12 Micron Technology, Inc. Atomic layer deposition methods and atomic layer deposition tools
JP2004080053A (ja) 2003-11-07 2004-03-11 Hitachi Kokusai Electric Inc 半導体製造装置
DE102006055038B4 (de) 2006-11-22 2012-12-27 Siltronic Ag Epitaxierte Halbleiterscheibe sowie Vorrichtung und Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe
JP5548841B2 (ja) 2008-01-16 2014-07-16 チャーム エンジニアリング シーオー エルティーディー 基板処理装置
KR101421644B1 (ko) 2008-01-16 2014-07-24 참엔지니어링(주) 기판 지지장치 및 이를 구비하는 기판 처리장치
JP5347288B2 (ja) * 2008-03-17 2013-11-20 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
WO2010015695A1 (de) 2008-08-08 2010-02-11 Nanophotonics Ag Inspektionsvorrichtung- und verfahren für die optische untersuchung von objektoberflächen, insbesondere von waferkanten
US20100055330A1 (en) * 2008-08-28 2010-03-04 Hermes Systems Inc. Epitaxy Processing System and Its Processing Method
JP2010098048A (ja) * 2008-10-15 2010-04-30 Shin Etsu Handotai Co Ltd ウェーハ移載装置及び縦型熱処理装置
DE102009000528B4 (de) 2009-01-30 2011-04-07 Nanophotonics Ag Inspektionsvorrichtung und -verfahren für die optische Untersuchung von Objektoberflächen, insbesondere von Waferoberflächen
US8216379B2 (en) * 2009-04-23 2012-07-10 Applied Materials, Inc. Non-circular substrate holders
KR101125738B1 (ko) 2010-03-17 2012-03-27 주식회사 엘지실트론 서셉터 및 이를 사용하는 에피텍셜 반응기
US8630479B2 (en) 2011-01-07 2014-01-14 Kla-Tencor Corporation Methods and systems for improved localized feature quantification in surface metrology tools
US9031810B2 (en) 2011-01-11 2015-05-12 Haiguang Chen Methods and systems of object based metrology for advanced wafer surface nanotopography
WO2012134663A2 (en) * 2011-03-16 2012-10-04 Applied Materials, Inc Method and apparatus utilizing a single lift mechanism for processing and transfer of substrates
JP2013016635A (ja) * 2011-07-04 2013-01-24 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
US8979087B2 (en) * 2011-07-29 2015-03-17 Applied Materials, Inc. Substrate supporting edge ring with coating for improved soak performance
JP2013175641A (ja) * 2012-02-27 2013-09-05 Hitachi Kokusai Electric Inc 基板処理装置および基板処理方法
JP2014060327A (ja) * 2012-09-19 2014-04-03 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
US10361097B2 (en) * 2012-12-31 2019-07-23 Globalwafers Co., Ltd. Apparatus for stressing semiconductor substrates
JP6077919B2 (ja) * 2013-04-12 2017-02-08 東京エレクトロン株式会社 基板把持装置及びこれを用いた基板処理装置、並びに基板把持方法
JP6186000B2 (ja) * 2013-08-27 2017-08-23 株式会社日立国際電気 基板処理装置のメンテナンス方法、半導体装置の製造方法、基板処理装置、及び基板処理装置のメンテナンスプログラム
ITCO20130073A1 (it) * 2013-12-19 2015-06-20 Lpe Spa Camera di reazione di un reattore per crescite epitassiali adatta per l'uso con un dispositivo di carico/scarico e reattore
CN107112265B (zh) * 2015-01-09 2020-12-04 应用材料公司 基板传送机构
KR102615853B1 (ko) * 2015-10-15 2023-12-21 어플라이드 머티어리얼스, 인코포레이티드 기판 캐리어 시스템

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JP6883581B2 (ja) 2021-06-09
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US10597795B2 (en) 2020-03-24
CN108474135A (zh) 2018-08-31
EP3384073B1 (de) 2021-01-20
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TW201721718A (zh) 2017-06-16
US20180282900A1 (en) 2018-10-04

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