SG11201803364WA - Polishing composition - Google Patents
Polishing compositionInfo
- Publication number
- SG11201803364WA SG11201803364WA SG11201803364WA SG11201803364WA SG11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing composition
- polishing
- composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
- C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
- C08F216/04—Acyclic compounds
- C08F216/06—Polyvinyl alcohol ; Vinyl alcohol
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015209327 | 2015-10-23 | ||
PCT/JP2016/081115 WO2017069202A1 (ja) | 2015-10-23 | 2016-10-20 | 研磨用組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201803364WA true SG11201803364WA (en) | 2018-05-30 |
Family
ID=58557354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201803364WA SG11201803364WA (en) | 2015-10-23 | 2016-10-20 | Polishing composition |
Country Status (8)
Country | Link |
---|---|
US (1) | US10435588B2 (ja) |
EP (1) | EP3366746B1 (ja) |
JP (1) | JP6960336B2 (ja) |
KR (1) | KR20180070586A (ja) |
CN (1) | CN108350344B (ja) |
SG (1) | SG11201803364WA (ja) |
TW (1) | TWI795346B (ja) |
WO (1) | WO2017069202A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11278151B2 (en) | 2017-08-09 | 2022-03-22 | Sharkninja Operating Llc | Cooking device and components thereof |
JP7002354B2 (ja) * | 2018-01-29 | 2022-02-04 | ニッタ・デュポン株式会社 | 研磨用組成物 |
JP7330676B2 (ja) * | 2018-08-09 | 2023-08-22 | 株式会社フジミインコーポレーテッド | シリコンウェーハ研磨用組成物 |
JP7361467B2 (ja) * | 2018-12-25 | 2023-10-16 | ニッタ・デュポン株式会社 | 研磨用組成物 |
JP7158280B2 (ja) * | 2018-12-28 | 2022-10-21 | ニッタ・デュポン株式会社 | 半導体研磨用組成物 |
JP7349309B2 (ja) * | 2019-09-30 | 2023-09-22 | 株式会社フジミインコーポレーテッド | シリコンウェーハ用研磨用組成物 |
JP7433042B2 (ja) * | 2019-12-24 | 2024-02-19 | ニッタ・デュポン株式会社 | 研磨用組成物 |
WO2024029457A1 (ja) * | 2022-08-05 | 2024-02-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2003021651A1 (ja) * | 2001-08-16 | 2004-12-24 | 旭化成ケミカルズ株式会社 | 金属膜用研磨液及びそれを用いた半導体基板の製造方法 |
JP2004172606A (ja) * | 2002-11-08 | 2004-06-17 | Sumitomo Chem Co Ltd | 金属研磨材組成物及び研磨方法 |
KR100640600B1 (ko) * | 2003-12-12 | 2006-11-01 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법 |
KR100725803B1 (ko) * | 2006-12-05 | 2007-06-08 | 제일모직주식회사 | 실리콘 웨이퍼 최종 연마용 슬러리 조성물 및 이를 이용한실리콘 웨이퍼 최종 연마 방법 |
JP5235364B2 (ja) | 2007-09-05 | 2013-07-10 | 日本合成化学工業株式会社 | 側鎖に1,2−ジオール構造を有するポリビニルアルコール系樹脂の製造方法 |
JP5491184B2 (ja) * | 2007-09-28 | 2014-05-14 | ニッタ・ハース株式会社 | 研磨用組成物 |
JP2009099819A (ja) * | 2007-10-18 | 2009-05-07 | Daicel Chem Ind Ltd | Cmp用研磨組成物及び該cmp用研磨組成物を使用したデバイスウェハの製造方法 |
US8247327B2 (en) * | 2008-07-30 | 2012-08-21 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
JP5721505B2 (ja) * | 2011-04-01 | 2015-05-20 | ニッタ・ハース株式会社 | 研磨用組成物 |
US9487674B2 (en) * | 2011-09-07 | 2016-11-08 | Basf Se | Chemical mechanical polishing (CMP) composition comprising a glycoside |
WO2013061771A1 (ja) * | 2011-10-24 | 2013-05-02 | 株式会社 フジミインコーポレーテッド | 研磨用組成物、それを用いた研磨方法及び基板の製造方法 |
KR101594531B1 (ko) * | 2012-11-30 | 2016-02-16 | 니타 하스 인코포레이티드 | 연마 조성물 |
JP6087143B2 (ja) | 2012-12-28 | 2017-03-01 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
SG11201507438YA (en) * | 2013-03-19 | 2015-10-29 | Fujimi Inc | Polishing composition, method for producing polishing composition and polishing composition preparation kit |
US8906252B1 (en) * | 2013-05-21 | 2014-12-09 | Cabot Microelelctronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
JP6879202B2 (ja) * | 2015-03-10 | 2021-06-02 | 昭和電工マテリアルズ株式会社 | 研磨剤、研磨剤用貯蔵液及び研磨方法 |
KR102657004B1 (ko) * | 2015-10-23 | 2024-04-15 | 니타 듀퐁 가부시키가이샤 | 연마용 조성물 |
US10421890B2 (en) * | 2016-03-31 | 2019-09-24 | Versum Materials Us, Llc | Composite particles, method of refining and use thereof |
-
2016
- 2016-10-20 EP EP16857515.7A patent/EP3366746B1/en active Active
- 2016-10-20 SG SG11201803364WA patent/SG11201803364WA/en unknown
- 2016-10-20 CN CN201680061334.7A patent/CN108350344B/zh active Active
- 2016-10-20 KR KR1020187011069A patent/KR20180070586A/ko not_active Application Discontinuation
- 2016-10-20 US US15/769,889 patent/US10435588B2/en active Active
- 2016-10-20 JP JP2017545787A patent/JP6960336B2/ja active Active
- 2016-10-20 WO PCT/JP2016/081115 patent/WO2017069202A1/ja active Application Filing
- 2016-10-21 TW TW105134180A patent/TWI795346B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN108350344B (zh) | 2021-02-12 |
KR20180070586A (ko) | 2018-06-26 |
WO2017069202A1 (ja) | 2017-04-27 |
EP3366746A1 (en) | 2018-08-29 |
TWI795346B (zh) | 2023-03-11 |
US20180305580A1 (en) | 2018-10-25 |
US10435588B2 (en) | 2019-10-08 |
JP6960336B2 (ja) | 2021-11-05 |
CN108350344A (zh) | 2018-07-31 |
EP3366746B1 (en) | 2023-02-22 |
EP3366746A4 (en) | 2018-10-03 |
TW201728734A (zh) | 2017-08-16 |
JPWO2017069202A1 (ja) | 2018-08-09 |
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