SG11201803364WA - Polishing composition - Google Patents

Polishing composition

Info

Publication number
SG11201803364WA
SG11201803364WA SG11201803364WA SG11201803364WA SG11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA
Authority
SG
Singapore
Prior art keywords
polishing composition
polishing
composition
Prior art date
Application number
SG11201803364WA
Other languages
English (en)
Inventor
Noriaki Sugita
Mika Chinen
Takayuki Matsushita
Shuhei Matsuda
Original Assignee
Nitta Haas Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Inc filed Critical Nitta Haas Inc
Publication of SG11201803364WA publication Critical patent/SG11201803364WA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/02Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
    • C08F216/04Acyclic compounds
    • C08F216/06Polyvinyl alcohol ; Vinyl alcohol
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/06Other polishing compositions
    • C09G1/14Other polishing compositions based on non-waxy substances
    • C09G1/16Other polishing compositions based on non-waxy substances on natural or synthetic resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201803364WA 2015-10-23 2016-10-20 Polishing composition SG11201803364WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015209327 2015-10-23
PCT/JP2016/081115 WO2017069202A1 (ja) 2015-10-23 2016-10-20 研磨用組成物

Publications (1)

Publication Number Publication Date
SG11201803364WA true SG11201803364WA (en) 2018-05-30

Family

ID=58557354

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201803364WA SG11201803364WA (en) 2015-10-23 2016-10-20 Polishing composition

Country Status (8)

Country Link
US (1) US10435588B2 (ja)
EP (1) EP3366746B1 (ja)
JP (1) JP6960336B2 (ja)
KR (1) KR20180070586A (ja)
CN (1) CN108350344B (ja)
SG (1) SG11201803364WA (ja)
TW (1) TWI795346B (ja)
WO (1) WO2017069202A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11278151B2 (en) 2017-08-09 2022-03-22 Sharkninja Operating Llc Cooking device and components thereof
JP7002354B2 (ja) * 2018-01-29 2022-02-04 ニッタ・デュポン株式会社 研磨用組成物
JP7330676B2 (ja) * 2018-08-09 2023-08-22 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP7361467B2 (ja) * 2018-12-25 2023-10-16 ニッタ・デュポン株式会社 研磨用組成物
JP7158280B2 (ja) * 2018-12-28 2022-10-21 ニッタ・デュポン株式会社 半導体研磨用組成物
JP7349309B2 (ja) * 2019-09-30 2023-09-22 株式会社フジミインコーポレーテッド シリコンウェーハ用研磨用組成物
JP7433042B2 (ja) * 2019-12-24 2024-02-19 ニッタ・デュポン株式会社 研磨用組成物
WO2024029457A1 (ja) * 2022-08-05 2024-02-08 株式会社フジミインコーポレーテッド 研磨用組成物

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2003021651A1 (ja) * 2001-08-16 2004-12-24 旭化成ケミカルズ株式会社 金属膜用研磨液及びそれを用いた半導体基板の製造方法
JP2004172606A (ja) * 2002-11-08 2004-06-17 Sumitomo Chem Co Ltd 金属研磨材組成物及び研磨方法
KR100640600B1 (ko) * 2003-12-12 2006-11-01 삼성전자주식회사 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법
KR100725803B1 (ko) * 2006-12-05 2007-06-08 제일모직주식회사 실리콘 웨이퍼 최종 연마용 슬러리 조성물 및 이를 이용한실리콘 웨이퍼 최종 연마 방법
JP5235364B2 (ja) 2007-09-05 2013-07-10 日本合成化学工業株式会社 側鎖に1,2−ジオール構造を有するポリビニルアルコール系樹脂の製造方法
JP5491184B2 (ja) * 2007-09-28 2014-05-14 ニッタ・ハース株式会社 研磨用組成物
JP2009099819A (ja) * 2007-10-18 2009-05-07 Daicel Chem Ind Ltd Cmp用研磨組成物及び該cmp用研磨組成物を使用したデバイスウェハの製造方法
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
JP5721505B2 (ja) * 2011-04-01 2015-05-20 ニッタ・ハース株式会社 研磨用組成物
US9487674B2 (en) * 2011-09-07 2016-11-08 Basf Se Chemical mechanical polishing (CMP) composition comprising a glycoside
WO2013061771A1 (ja) * 2011-10-24 2013-05-02 株式会社 フジミインコーポレーテッド 研磨用組成物、それを用いた研磨方法及び基板の製造方法
KR101594531B1 (ko) * 2012-11-30 2016-02-16 니타 하스 인코포레이티드 연마 조성물
JP6087143B2 (ja) 2012-12-28 2017-03-01 花王株式会社 シリコンウェーハ用研磨液組成物
SG11201507438YA (en) * 2013-03-19 2015-10-29 Fujimi Inc Polishing composition, method for producing polishing composition and polishing composition preparation kit
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
JP6879202B2 (ja) * 2015-03-10 2021-06-02 昭和電工マテリアルズ株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法
KR102657004B1 (ko) * 2015-10-23 2024-04-15 니타 듀퐁 가부시키가이샤 연마용 조성물
US10421890B2 (en) * 2016-03-31 2019-09-24 Versum Materials Us, Llc Composite particles, method of refining and use thereof

Also Published As

Publication number Publication date
CN108350344B (zh) 2021-02-12
KR20180070586A (ko) 2018-06-26
WO2017069202A1 (ja) 2017-04-27
EP3366746A1 (en) 2018-08-29
TWI795346B (zh) 2023-03-11
US20180305580A1 (en) 2018-10-25
US10435588B2 (en) 2019-10-08
JP6960336B2 (ja) 2021-11-05
CN108350344A (zh) 2018-07-31
EP3366746B1 (en) 2023-02-22
EP3366746A4 (en) 2018-10-03
TW201728734A (zh) 2017-08-16
JPWO2017069202A1 (ja) 2018-08-09

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