JPWO2017069202A1 - 研磨用組成物 - Google Patents
研磨用組成物 Download PDFInfo
- Publication number
- JPWO2017069202A1 JPWO2017069202A1 JP2017545787A JP2017545787A JPWO2017069202A1 JP WO2017069202 A1 JPWO2017069202 A1 JP WO2017069202A1 JP 2017545787 A JP2017545787 A JP 2017545787A JP 2017545787 A JP2017545787 A JP 2017545787A JP WO2017069202 A1 JPWO2017069202 A1 JP WO2017069202A1
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- polishing
- average particle
- polyhydric alcohol
- abrasive grains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
- C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
- C08F216/04—Acyclic compounds
- C08F216/06—Polyvinyl alcohol ; Vinyl alcohol
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
Description
実施例1〜実施例27、及び比較例1〜比較例8の研磨用組成物の組成について説明する。なお、各研磨用組成物の組成を表1〜表6にも示す。表1〜表6において、各成分の重量%は、研磨用組成物(原液)全体に対する重量%を表す。
研磨装置(SPP800S、岡本工作機械製作所製)を用い、研磨パッド(SUPREME(登録商標) RN−H、ニッタ・ハース株式会社製)に、31倍に希釈された実施例1〜実施例27及び比較例1〜比較例8の研磨用組成物を1000mL/分の割合で供給して、4分間、シリコンウェーハの研磨を行った。用いたシリコンウェーハは、直径が300mmのP型半導体のものであり、結晶方位が(100)であった。このときの研磨条件としては、シリコンウェーハにかける圧力が0.012MPa、研磨定盤の回転速度が40rpm、キャリアの回転速度が39rpmであった。
上記の実施例1〜実施例27及び比較例1〜比較例8について、ウェーハ欠陥検査・レビュー装置(レーザーテック株式会社製の「MAGICS M5640」)を用いて欠陥数の測定を行った。測定時のウェーハ欠陥検査・レビュー装置の最高感度は、D37mVに設定した。
上記の実施例1〜実施例27及び比較例1〜比較例8について、ウェーハ表面検査装置(日立エンジニアリング社製の「LS6600」)を用いて、ヘイズ値の測定を行った。
上記の実施例1〜実施例27及び比較例1〜比較例8について、動的光散乱法を用いて、研磨用組成物を測定対象物として、研磨用組成物中の粒子の平均粒子径の測定を行った。測定には、大塚電子株式会社製の粒径測定システム「ELS−Z2」を用いた。
研磨用組成物が砥粒、アルカリ化合物及び変性PVAを含む実施例1及び比較例1を比較すると、配合する砥粒の径が小さい(平均粒子径:50nm)実施例1は、砥粒の径が大きい(平均粒子径:70nm)比較例1よりも、シリコンウェーハの欠陥数及びヘイズ値が著しく良好となることが分かる。
Claims (5)
- 請求項1に記載の研磨用組成物において、
さらに、非イオン性界面活性剤を含む、研磨用組成物。 - 請求項1〜請求項3のいずれか一項に記載の研磨用組成物において、
さらに、多価アルコールを含む、研磨用組成物。 - 請求項4に記載の研磨用組成物において、
前記多価アルコールは、メチルグルコシドのアルキレンオキシド誘導体である、研磨用組成物。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015209327 | 2015-10-23 | ||
JP2015209327 | 2015-10-23 | ||
PCT/JP2016/081115 WO2017069202A1 (ja) | 2015-10-23 | 2016-10-20 | 研磨用組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017069202A1 true JPWO2017069202A1 (ja) | 2018-08-09 |
JP6960336B2 JP6960336B2 (ja) | 2021-11-05 |
Family
ID=58557354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017545787A Active JP6960336B2 (ja) | 2015-10-23 | 2016-10-20 | 研磨用組成物 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10435588B2 (ja) |
EP (1) | EP3366746B1 (ja) |
JP (1) | JP6960336B2 (ja) |
KR (1) | KR20180070586A (ja) |
CN (1) | CN108350344B (ja) |
SG (1) | SG11201803364WA (ja) |
TW (1) | TWI795346B (ja) |
WO (1) | WO2017069202A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA3107448C (en) | 2017-08-09 | 2023-04-04 | Sharkninja Operating Llc | Cooking device and components thereof |
JP7002354B2 (ja) * | 2018-01-29 | 2022-02-04 | ニッタ・デュポン株式会社 | 研磨用組成物 |
JP7330676B2 (ja) * | 2018-08-09 | 2023-08-22 | 株式会社フジミインコーポレーテッド | シリコンウェーハ研磨用組成物 |
JP7361467B2 (ja) * | 2018-12-25 | 2023-10-16 | ニッタ・デュポン株式会社 | 研磨用組成物 |
JP7158280B2 (ja) * | 2018-12-28 | 2022-10-21 | ニッタ・デュポン株式会社 | 半導体研磨用組成物 |
JP7349309B2 (ja) * | 2019-09-30 | 2023-09-22 | 株式会社フジミインコーポレーテッド | シリコンウェーハ用研磨用組成物 |
JP7433042B2 (ja) * | 2019-12-24 | 2024-02-19 | ニッタ・デュポン株式会社 | 研磨用組成物 |
WO2024029457A1 (ja) * | 2022-08-05 | 2024-02-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Citations (6)
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JP2012216723A (ja) * | 2011-04-01 | 2012-11-08 | Nitta Haas Inc | 研磨用組成物 |
WO2013061771A1 (ja) * | 2011-10-24 | 2013-05-02 | 株式会社 フジミインコーポレーテッド | 研磨用組成物、それを用いた研磨方法及び基板の製造方法 |
WO2014084091A1 (ja) * | 2012-11-30 | 2014-06-05 | ニッタ・ハース株式会社 | 研磨組成物 |
JP2014130958A (ja) * | 2012-12-28 | 2014-07-10 | Kao Corp | シリコンウェーハ用研磨液組成物 |
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WO2014189684A1 (en) * | 2013-05-21 | 2014-11-27 | Cabot Microelectronics Corporation | Cmp compositions selective for oxide and nitride with high removal rate and low defectivity |
Family Cites Families (12)
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KR20040030100A (ko) * | 2001-08-16 | 2004-04-08 | 아사히 가세이 케미칼즈 가부시키가이샤 | 금속막용 연마액 및 그를 이용한 반도체 기판의 제조 방법 |
JP2004172606A (ja) * | 2002-11-08 | 2004-06-17 | Sumitomo Chem Co Ltd | 金属研磨材組成物及び研磨方法 |
KR100640600B1 (ko) * | 2003-12-12 | 2006-11-01 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법 |
KR100725803B1 (ko) * | 2006-12-05 | 2007-06-08 | 제일모직주식회사 | 실리콘 웨이퍼 최종 연마용 슬러리 조성물 및 이를 이용한실리콘 웨이퍼 최종 연마 방법 |
JP5235364B2 (ja) * | 2007-09-05 | 2013-07-10 | 日本合成化学工業株式会社 | 側鎖に1,2−ジオール構造を有するポリビニルアルコール系樹脂の製造方法 |
DE112008002628B4 (de) * | 2007-09-28 | 2018-07-19 | Nitta Haas Inc. | Polierzusammensetzung |
JP2009099819A (ja) * | 2007-10-18 | 2009-05-07 | Daicel Chem Ind Ltd | Cmp用研磨組成物及び該cmp用研磨組成物を使用したデバイスウェハの製造方法 |
US8247327B2 (en) * | 2008-07-30 | 2012-08-21 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
US9487674B2 (en) * | 2011-09-07 | 2016-11-08 | Basf Se | Chemical mechanical polishing (CMP) composition comprising a glycoside |
KR102583709B1 (ko) * | 2015-03-10 | 2023-09-26 | 가부시끼가이샤 레조낙 | 연마제, 연마제용 저장액 및 연마 방법 |
US10696869B2 (en) * | 2015-10-23 | 2020-06-30 | Nitta Haas Incorporated | Polishing composition |
US10421890B2 (en) * | 2016-03-31 | 2019-09-24 | Versum Materials Us, Llc | Composite particles, method of refining and use thereof |
-
2016
- 2016-10-20 KR KR1020187011069A patent/KR20180070586A/ko not_active Application Discontinuation
- 2016-10-20 CN CN201680061334.7A patent/CN108350344B/zh active Active
- 2016-10-20 SG SG11201803364WA patent/SG11201803364WA/en unknown
- 2016-10-20 WO PCT/JP2016/081115 patent/WO2017069202A1/ja active Application Filing
- 2016-10-20 JP JP2017545787A patent/JP6960336B2/ja active Active
- 2016-10-20 EP EP16857515.7A patent/EP3366746B1/en active Active
- 2016-10-20 US US15/769,889 patent/US10435588B2/en active Active
- 2016-10-21 TW TW105134180A patent/TWI795346B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012216723A (ja) * | 2011-04-01 | 2012-11-08 | Nitta Haas Inc | 研磨用組成物 |
WO2013061771A1 (ja) * | 2011-10-24 | 2013-05-02 | 株式会社 フジミインコーポレーテッド | 研磨用組成物、それを用いた研磨方法及び基板の製造方法 |
WO2014084091A1 (ja) * | 2012-11-30 | 2014-06-05 | ニッタ・ハース株式会社 | 研磨組成物 |
JP2014130958A (ja) * | 2012-12-28 | 2014-07-10 | Kao Corp | シリコンウェーハ用研磨液組成物 |
WO2014148399A1 (ja) * | 2013-03-19 | 2014-09-25 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物製造方法および研磨用組成物調製用キット |
WO2014189684A1 (en) * | 2013-05-21 | 2014-11-27 | Cabot Microelectronics Corporation | Cmp compositions selective for oxide and nitride with high removal rate and low defectivity |
Also Published As
Publication number | Publication date |
---|---|
EP3366746A1 (en) | 2018-08-29 |
CN108350344B (zh) | 2021-02-12 |
KR20180070586A (ko) | 2018-06-26 |
CN108350344A (zh) | 2018-07-31 |
TWI795346B (zh) | 2023-03-11 |
EP3366746A4 (en) | 2018-10-03 |
SG11201803364WA (en) | 2018-05-30 |
WO2017069202A1 (ja) | 2017-04-27 |
TW201728734A (zh) | 2017-08-16 |
US10435588B2 (en) | 2019-10-08 |
US20180305580A1 (en) | 2018-10-25 |
JP6960336B2 (ja) | 2021-11-05 |
EP3366746B1 (en) | 2023-02-22 |
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