SG11201703059VA - Method for producing semiconductor integrated circuit devices, and semiconductor integrated circuit device - Google Patents

Method for producing semiconductor integrated circuit devices, and semiconductor integrated circuit device

Info

Publication number
SG11201703059VA
SG11201703059VA SG11201703059VA SG11201703059VA SG11201703059VA SG 11201703059V A SG11201703059V A SG 11201703059VA SG 11201703059V A SG11201703059V A SG 11201703059VA SG 11201703059V A SG11201703059V A SG 11201703059VA SG 11201703059V A SG11201703059V A SG 11201703059VA
Authority
SG
Singapore
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
producing
circuit devices
Prior art date
Application number
SG11201703059VA
Other languages
English (en)
Inventor
Yasuhiro Taniguchi
Yasuhiko Kawashima
Hideo Kasai
Ryotaro Sakurai
Yutaka Shinagawa
Kosuke Okuyama
Original Assignee
Floadia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Floadia Corp filed Critical Floadia Corp
Publication of SG11201703059VA publication Critical patent/SG11201703059VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
    • H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
SG11201703059VA 2014-10-15 2015-10-06 Method for producing semiconductor integrated circuit devices, and semiconductor integrated circuit device SG11201703059VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014211097 2014-10-15
PCT/JP2015/078335 WO2016060013A1 (ja) 2014-10-15 2015-10-06 半導体集積回路装置の製造方法、および半導体集積回路装置

Publications (1)

Publication Number Publication Date
SG11201703059VA true SG11201703059VA (en) 2017-05-30

Family

ID=55746560

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201703059VA SG11201703059VA (en) 2014-10-15 2015-10-06 Method for producing semiconductor integrated circuit devices, and semiconductor integrated circuit device

Country Status (8)

Country Link
EP (1) EP3208831B1 (ko)
JP (1) JP5905654B1 (ko)
KR (1) KR101815431B1 (ko)
CN (1) CN106796940B (ko)
IL (1) IL251713B (ko)
SG (1) SG11201703059VA (ko)
TW (1) TWI597802B (ko)
WO (1) WO2016060013A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021027205A (ja) * 2019-08-06 2021-02-22 キオクシア株式会社 半導体記憶装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4058232B2 (ja) * 2000-11-29 2008-03-05 株式会社ルネサステクノロジ 半導体装置及びｉｃカード
JP2005142354A (ja) * 2003-11-06 2005-06-02 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその駆動方法及びその製造方法
KR20100080240A (ko) * 2008-12-31 2010-07-08 주식회사 동부하이텍 플래시메모리 소자 및 그 제조 방법
KR20100080244A (ko) * 2008-12-31 2010-07-08 주식회사 동부하이텍 플래시메모리 소자 및 그 제조방법
KR20100080190A (ko) 2008-12-31 2010-07-08 주식회사 동부하이텍 플래시메모리 소자 및 그 제조 방법
KR20100080241A (ko) * 2008-12-31 2010-07-08 주식회사 동부하이텍 플래시메모리 소자의 제조 방법
US20110204374A1 (en) * 2009-01-20 2011-08-25 Sharp Kabushiki Kaisha Thin film diode and method for fabricating the same

Also Published As

Publication number Publication date
KR101815431B1 (ko) 2018-01-04
WO2016060013A1 (ja) 2016-04-21
KR20170070141A (ko) 2017-06-21
TW201622067A (zh) 2016-06-16
EP3208831A1 (en) 2017-08-23
JPWO2016060013A1 (ja) 2017-04-27
TWI597802B (zh) 2017-09-01
IL251713B (en) 2018-04-30
CN106796940B (zh) 2018-10-23
JP5905654B1 (ja) 2016-04-20
EP3208831A4 (en) 2017-11-08
EP3208831B1 (en) 2021-07-07
IL251713A0 (en) 2017-06-29
CN106796940A (zh) 2017-05-31

Similar Documents

Publication Publication Date Title
TWI562209B (en) Semiconductor device and method for manufacturing the same
HK1231630A1 (zh) 半導體器件以及半導體器件的製造方法
EP3168882A4 (en) Semiconductor device and method for producing semiconductor device
SG10201912585TA (en) Semiconductor device and method for manufacturing the same
SG11201606536XA (en) Semiconductor device and manufacturing method thereof
HK1223192A1 (zh) 半導體器件及其製造方法
SG10201608814YA (en) Semiconductor device and method for manufacturing the semiconductor device
EP3163607A4 (en) Wiring board, semiconductor device and method for manufacturing semiconductor device
EP3128547A4 (en) Interposer, semiconductor device, interposer manufacturing method, and semiconductor device manufacturing method
SG11201709671YA (en) Semiconductor device manufacturing method
TWI562362B (en) Semiconductor device structure and method for forming the same
SG11201605542RA (en) Semiconductor substrate, semiconductor device and manufacturing method for semiconductor substrate
GB2556255B (en) Semiconductor device and semiconductor device manufacturing method
GB201810879D0 (en) Semiconductor device and method for producing semiconductor device
SG11201607791PA (en) Holding circuit, driving method of the holding circuit, and semiconductor device including the holding circuit
EP3101686A4 (en) Semiconductor integrated circuit device
SG11201504337QA (en) Method for producing semiconductor device, and semiconductor device
IL257070B (en) A method of manufacturing a semiconductor device with an integrated circuit and a semiconductor device with an integrated circuit
SG11201606808UA (en) Method for producing semiconductor device, and wire-bonding device
TWI562302B (en) Semiconductor device and method for fabricating the same
EP3107117A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD FOR SEMICONDUCTOR COMPONENT
IL251714A0 (en) Semiconductor device and method of manufacturing the same
GB201621079D0 (en) Semiconductor device, electronic component and method
GB201719387D0 (en) Semiconductor device, and method for manufacturing same
EP3159932A4 (en) Semiconductor device, and method for producing same