SG11201703059VA - Method for producing semiconductor integrated circuit devices, and semiconductor integrated circuit device - Google Patents
Method for producing semiconductor integrated circuit devices, and semiconductor integrated circuit deviceInfo
- Publication number
- SG11201703059VA SG11201703059VA SG11201703059VA SG11201703059VA SG11201703059VA SG 11201703059V A SG11201703059V A SG 11201703059VA SG 11201703059V A SG11201703059V A SG 11201703059VA SG 11201703059V A SG11201703059V A SG 11201703059VA SG 11201703059V A SG11201703059V A SG 11201703059VA
- Authority
- SG
- Singapore
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- producing
- circuit devices
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014211097 | 2014-10-15 | ||
PCT/JP2015/078335 WO2016060013A1 (en) | 2014-10-15 | 2015-10-06 | Method for producing semiconductor integrated circuit devices, and semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201703059VA true SG11201703059VA (en) | 2017-05-30 |
Family
ID=55746560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201703059VA SG11201703059VA (en) | 2014-10-15 | 2015-10-06 | Method for producing semiconductor integrated circuit devices, and semiconductor integrated circuit device |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP3208831B1 (en) |
JP (1) | JP5905654B1 (en) |
KR (1) | KR101815431B1 (en) |
CN (1) | CN106796940B (en) |
IL (1) | IL251713B (en) |
SG (1) | SG11201703059VA (en) |
TW (1) | TWI597802B (en) |
WO (1) | WO2016060013A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021027205A (en) * | 2019-08-06 | 2021-02-22 | キオクシア株式会社 | Semiconductor storage device and method for manufacturing the same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4058232B2 (en) * | 2000-11-29 | 2008-03-05 | 株式会社ルネサステクノロジ | Semiconductor device and IC card |
JP2005142354A (en) * | 2003-11-06 | 2005-06-02 | Matsushita Electric Ind Co Ltd | Non-volatile semiconductor storage device, its driving method, and manufacturing method |
KR20100080190A (en) | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | Flash memory device and manufacturing method the same |
KR20100080244A (en) * | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | Flash memory device and manufacturing method the same |
KR20100080241A (en) * | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | Method for manufacturing flash memory device |
KR20100080240A (en) * | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | Flash memory device and manufacturing method the same |
CN102203922A (en) * | 2009-01-20 | 2011-09-28 | 夏普株式会社 | Thin film diode and method for manufacturing same |
-
2015
- 2015-10-06 CN CN201580055293.6A patent/CN106796940B/en active Active
- 2015-10-06 WO PCT/JP2015/078335 patent/WO2016060013A1/en active Application Filing
- 2015-10-06 KR KR1020177012771A patent/KR101815431B1/en active IP Right Grant
- 2015-10-06 EP EP15850113.0A patent/EP3208831B1/en active Active
- 2015-10-06 SG SG11201703059VA patent/SG11201703059VA/en unknown
- 2015-10-06 JP JP2015560113A patent/JP5905654B1/en active Active
- 2015-10-15 TW TW104133917A patent/TWI597802B/en active
-
2017
- 2017-04-12 IL IL251713A patent/IL251713B/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP3208831B1 (en) | 2021-07-07 |
KR101815431B1 (en) | 2018-01-04 |
CN106796940A (en) | 2017-05-31 |
CN106796940B (en) | 2018-10-23 |
IL251713B (en) | 2018-04-30 |
WO2016060013A1 (en) | 2016-04-21 |
EP3208831A1 (en) | 2017-08-23 |
IL251713A0 (en) | 2017-06-29 |
KR20170070141A (en) | 2017-06-21 |
TW201622067A (en) | 2016-06-16 |
JP5905654B1 (en) | 2016-04-20 |
TWI597802B (en) | 2017-09-01 |
EP3208831A4 (en) | 2017-11-08 |
JPWO2016060013A1 (en) | 2017-04-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI562209B (en) | Semiconductor device and method for manufacturing the same | |
HK1231630A1 (en) | Semiconductor device and method for manufacturing same | |
SG10201912585TA (en) | Semiconductor device and method for manufacturing the same | |
EP3168882A4 (en) | Semiconductor device and method for producing semiconductor device | |
SG11201606536XA (en) | Semiconductor device and manufacturing method thereof | |
HK1223192A1 (en) | Semiconductor device and manufacturing method thereof | |
EP3163607A4 (en) | Wiring board, semiconductor device and method for manufacturing semiconductor device | |
SG10201608814YA (en) | Semiconductor device and method for manufacturing the semiconductor device | |
EP3128547A4 (en) | Interposer, semiconductor device, interposer manufacturing method, and semiconductor device manufacturing method | |
SG11201709671YA (en) | Semiconductor device manufacturing method | |
TWI562362B (en) | Semiconductor device structure and method for forming the same | |
SG11201605542RA (en) | Semiconductor substrate, semiconductor device and manufacturing method for semiconductor substrate | |
GB2556255B (en) | Semiconductor device and semiconductor device manufacturing method | |
SG11201607791PA (en) | Holding circuit, driving method of the holding circuit, and semiconductor device including the holding circuit | |
GB201810879D0 (en) | Semiconductor device and method for producing semiconductor device | |
IL257070B (en) | Semiconductor integrated circuit device production method, and semiconductor integrated circuit device | |
EP3101686A4 (en) | Semiconductor integrated circuit device | |
TWI562302B (en) | Semiconductor device and method for fabricating the same | |
EP3107117A4 (en) | Semiconductor device and production method for semiconductor device | |
IL251714A0 (en) | Semiconductor device, and production method therefor | |
SG11201504337QA (en) | Method for producing semiconductor device, and semiconductor device | |
GB201719387D0 (en) | Semiconductor device, and method for manufacturing same | |
EP3159932A4 (en) | Semiconductor device, and method for producing same | |
SG11201606808UA (en) | Method for producing semiconductor device, and wire-bonding device | |
TWI562373B (en) | Semiconductor device and method for manufacturing the same |