SG11201610311SA - Apparatus and methods for alignment of a susceptor - Google Patents

Apparatus and methods for alignment of a susceptor

Info

Publication number
SG11201610311SA
SG11201610311SA SG11201610311SA SG11201610311SA SG11201610311SA SG 11201610311S A SG11201610311S A SG 11201610311SA SG 11201610311S A SG11201610311S A SG 11201610311SA SG 11201610311S A SG11201610311S A SG 11201610311SA SG 11201610311S A SG11201610311S A SG 11201610311SA
Authority
SG
Singapore
Prior art keywords
susceptor
alignment
methods
Prior art date
Application number
SG11201610311SA
Other languages
English (en)
Inventor
Edric Tong
James Francis Mack
Paul Brillhart
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201610311SA publication Critical patent/SG11201610311SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG11201610311SA 2014-07-11 2015-06-08 Apparatus and methods for alignment of a susceptor SG11201610311SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462023625P 2014-07-11 2014-07-11
US201462039210P 2014-08-19 2014-08-19
PCT/US2015/034732 WO2016007251A1 (en) 2014-07-11 2015-06-08 Apparatus and methods for alignment of a susceptor

Publications (1)

Publication Number Publication Date
SG11201610311SA true SG11201610311SA (en) 2017-01-27

Family

ID=55064668

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201610311SA SG11201610311SA (en) 2014-07-11 2015-06-08 Apparatus and methods for alignment of a susceptor

Country Status (6)

Country Link
US (2) US10883190B2 (zh)
KR (2) KR102398918B1 (zh)
CN (1) CN106663630B (zh)
SG (1) SG11201610311SA (zh)
TW (1) TWI667731B (zh)
WO (1) WO2016007251A1 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5951095B1 (ja) * 2015-09-08 2016-07-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム
KR102446726B1 (ko) * 2015-09-11 2022-09-26 삼성전자주식회사 투명 플레이트 및 그를 포함하는 기판 처리 장치
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US20180128647A1 (en) 2016-11-10 2018-05-10 Aixtron Se Device and method to control the uniformity of a gas flow in a cvd or an ald reactor or of a layer grown therein
US11183418B2 (en) * 2017-06-01 2021-11-23 Applied Materials, Inc. Two axis goniometer to accomplish fine, permanent, calibration of lift pin hoop orientation
KR102642790B1 (ko) * 2018-08-06 2024-03-05 어플라이드 머티어리얼스, 인코포레이티드 처리 챔버를 위한 라이너
US10763154B2 (en) * 2018-08-28 2020-09-01 Applied Materials, Inc. Measurement of flatness of a susceptor of a display CVD chamber
CN111235550B (zh) * 2018-11-29 2022-06-17 北京北方华创微电子装备有限公司 基座调节装置及腔室
DE102019116460A1 (de) 2019-06-18 2020-12-24 Aixtron Se Vorrichtung und Verfahren zum Bestimmen und Einstellen der Neigungslage eines Suszeptors
CN110670127B (zh) * 2019-09-27 2021-03-02 西安奕斯伟硅片技术有限公司 一种晶圆外延设备
CN111725114B (zh) * 2020-06-30 2023-07-14 北京北方华创微电子装备有限公司 加热灯的位置校正装置
EP3978647A1 (de) 2020-09-30 2022-04-06 Siltronic AG Verfahren und vorrichtung zum abscheiden einer epitaktischen schicht auf einer substratscheibe aus halbleitermaterial
CN114695234A (zh) * 2020-12-31 2022-07-01 拓荆科技股份有限公司 保护机构及保护晶圆和销的方法
US20220322492A1 (en) * 2021-04-06 2022-10-06 Applied Materials, Inc. Epitaxial deposition chamber
EP4098782A1 (de) 2021-06-01 2022-12-07 Siltronic AG Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe aus halbleitermaterial in einer abscheidevorrichtung
CN114214731B (zh) * 2021-10-08 2024-02-06 上海汉虹精密机械有限公司 碳化硅炉专用籽晶升降旋转机构
CN115161766B (zh) * 2022-07-14 2024-04-26 中国电子科技集团公司第四十八研究所 硅外延设备的石墨基座旋转结构及石墨基座水平调节方法
KR102660602B1 (ko) * 2024-02-08 2024-04-25 (주)네오스테크놀로지스 다축 als의 실시간 수평보정 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5135098A (en) * 1987-01-20 1992-08-04 Ikegami Tsushinki Co., Ltd. Apparatus for mounting chip device on printed circuit board
US5062386A (en) * 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
US6375741B2 (en) * 1991-03-06 2002-04-23 Timothy J. Reardon Semiconductor processing spray coating apparatus
US5421893A (en) * 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
TW254030B (en) * 1994-03-18 1995-08-11 Anelva Corp Mechanic escape mechanism for substrate
KR100298587B1 (ko) * 1999-11-22 2001-11-05 윤종용 이온 주입 장치
KR20040022278A (ko) * 2002-09-03 2004-03-12 삼성전자주식회사 반도체를 제조하기 위한 장치
US20040177813A1 (en) * 2003-03-12 2004-09-16 Applied Materials, Inc. Substrate support lift mechanism
JP4354243B2 (ja) * 2003-04-21 2009-10-28 東京エレクトロン株式会社 被処理体の昇降機構及び処理装置
US7026581B2 (en) * 2003-08-22 2006-04-11 Axcelis Technologies, Inc. Apparatus for positioning an elevator tube
US20080017117A1 (en) * 2006-07-18 2008-01-24 Jeffrey Campbell Substrate support with adjustable lift and rotation mount
US8398777B2 (en) * 2008-05-02 2013-03-19 Applied Materials, Inc. System and method for pedestal adjustment
TWI371823B (en) * 2008-05-16 2012-09-01 Ind Tech Res Inst Supporting holder positioning a susceptor of a vacuum apparatus
CN102414794B (zh) * 2009-04-21 2015-01-28 应用材料公司 改良膜厚度不均匀性与粒子表现的cvd设备
US9087695B2 (en) * 2012-10-22 2015-07-21 Sensor Electronic Technology, Inc. Multi-wafer reactor

Also Published As

Publication number Publication date
KR20170032353A (ko) 2017-03-22
KR102398918B1 (ko) 2022-05-17
US20160010239A1 (en) 2016-01-14
KR20220065102A (ko) 2022-05-19
US20210002786A1 (en) 2021-01-07
TW201603180A (zh) 2016-01-16
CN106663630A (zh) 2017-05-10
US10883190B2 (en) 2021-01-05
US11859307B2 (en) 2024-01-02
TWI667731B (zh) 2019-08-01
WO2016007251A1 (en) 2016-01-14
KR102508832B1 (ko) 2023-03-10
CN106663630B (zh) 2020-09-22

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