SG11201607363TA - Methods and apparatus for rapidly cooling a substrate - Google Patents

Methods and apparatus for rapidly cooling a substrate

Info

Publication number
SG11201607363TA
SG11201607363TA SG11201607363TA SG11201607363TA SG11201607363TA SG 11201607363T A SG11201607363T A SG 11201607363TA SG 11201607363T A SG11201607363T A SG 11201607363TA SG 11201607363T A SG11201607363T A SG 11201607363TA SG 11201607363T A SG11201607363T A SG 11201607363TA
Authority
SG
Singapore
Prior art keywords
substrate
methods
rapidly cooling
rapidly
cooling
Prior art date
Application number
SG11201607363TA
Inventor
Jallepally Ravi
Steven V Sansoni
Kirankumar Savandaiah
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201607363TA publication Critical patent/SG11201607363TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
SG11201607363TA 2014-04-11 2015-03-17 Methods and apparatus for rapidly cooling a substrate SG11201607363TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/251,134 US9779971B2 (en) 2014-04-11 2014-04-11 Methods and apparatus for rapidly cooling a substrate
PCT/US2015/020905 WO2015156968A1 (en) 2014-04-11 2015-03-17 Methods and apparatus for rapidly cooling a substrate

Publications (1)

Publication Number Publication Date
SG11201607363TA true SG11201607363TA (en) 2016-10-28

Family

ID=54265673

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201607363TA SG11201607363TA (en) 2014-04-11 2015-03-17 Methods and apparatus for rapidly cooling a substrate

Country Status (7)

Country Link
US (2) US9779971B2 (en)
JP (1) JP6574442B2 (en)
KR (1) KR102350501B1 (en)
CN (1) CN106133874B (en)
SG (1) SG11201607363TA (en)
TW (1) TWI670386B (en)
WO (1) WO2015156968A1 (en)

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KR20170095872A (en) * 2014-12-11 2017-08-23 에바텍 아크티엔게젤샤프트 Apparatus and method especially for degassing of substrates
JP6554387B2 (en) * 2015-10-26 2019-07-31 東京エレクトロン株式会社 Substrate cooling method in load lock apparatus, substrate transfer method, and load lock apparatus
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
US11201078B2 (en) * 2017-02-14 2021-12-14 Applied Materials, Inc. Substrate position calibration for substrate supports in substrate processing systems
JP6863780B2 (en) * 2017-03-10 2021-04-21 株式会社Ｓｃｒｅｅｎホールディングス Heat treatment method and heat treatment equipment
TWI729319B (en) 2017-10-27 2021-06-01 美商應用材料股份有限公司 Single wafer processing environments with spatial separation
KR102640172B1 (en) 2019-07-03 2024-02-23 삼성전자주식회사 Processing apparatus for a substrate and method of driving the same
US11894255B2 (en) * 2019-07-30 2024-02-06 Applied Materials, Inc. Sheath and temperature control of process kit
USD931240S1 (en) 2019-07-30 2021-09-21 Applied Materials, Inc. Substrate support pedestal
WO2022015512A1 (en) * 2020-07-13 2022-01-20 Lam Research Corporation Seal venting in a substrate processing chamber

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US4615755A (en) * 1985-08-07 1986-10-07 The Perkin-Elmer Corporation Wafer cooling and temperature control for a plasma etching system
JP3272458B2 (en) * 1993-03-04 2002-04-08 株式会社日立国際電気 Substrate cooling device and substrate cooling method
JPH07254545A (en) * 1994-03-15 1995-10-03 Oki Electric Ind Co Ltd Heat treatment method for semiconductor substrate and device therefor
JP2971818B2 (en) * 1996-09-24 1999-11-08 イートン コーポレーション Wafer heat treatment equipment
US6108937A (en) 1998-09-10 2000-08-29 Asm America, Inc. Method of cooling wafers
JP3476687B2 (en) * 1998-09-21 2003-12-10 東京エレクトロン株式会社 Plasma processing equipment
US6183564B1 (en) 1998-11-12 2001-02-06 Tokyo Electron Limited Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system
JP2003124134A (en) * 2001-10-10 2003-04-25 Semiconductor Leading Edge Technologies Inc System and method for heat treatment
JP3921234B2 (en) * 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 Surface treatment apparatus and manufacturing method thereof
US6778762B1 (en) * 2002-04-17 2004-08-17 Novellus Systems, Inc. Sloped chamber top for substrate processing
US7429718B2 (en) * 2005-08-02 2008-09-30 Applied Materials, Inc. Heating and cooling of substrate support
US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US7743730B2 (en) * 2005-12-21 2010-06-29 Lam Research Corporation Apparatus for an optimized plasma chamber grounded electrode assembly
JP5183058B2 (en) * 2006-07-20 2013-04-17 アプライド マテリアルズ インコーポレイテッド Substrate processing with rapid temperature gradient control
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US7803419B2 (en) * 2006-09-22 2010-09-28 Abound Solar, Inc. Apparatus and method for rapid cooling of large area substrates in vacuum
US7378618B1 (en) * 2006-12-14 2008-05-27 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane
JP2008192643A (en) * 2007-01-31 2008-08-21 Tokyo Electron Ltd Substrate treating equipment
JP2009290087A (en) * 2008-05-30 2009-12-10 Tokyo Electron Ltd Focus ring, and plasma processing apparatus
US8033771B1 (en) * 2008-12-11 2011-10-11 Novellus Systems, Inc. Minimum contact area wafer clamping with gas flow for rapid wafer cooling
JP5382744B2 (en) * 2009-06-24 2014-01-08 キヤノンアネルバ株式会社 Vacuum heating / cooling apparatus and method of manufacturing magnetoresistive element
KR20140034318A (en) * 2009-09-28 2014-03-19 도쿄엘렉트론가부시키가이샤 Method and apparatus for cooling subject to be processed, and computer-readable storage medium
TW201135845A (en) * 2009-10-09 2011-10-16 Canon Anelva Corp Acuum heating and cooling apparatus
KR20120120102A (en) * 2010-10-18 2012-11-01 가부시키가이샤 히다치 하이테크놀로지즈 Vacuum processing apparatus and vacuum processing method
JP2012089591A (en) * 2010-10-18 2012-05-10 Hitachi High-Technologies Corp Vacuum processing apparatus and vacuum processing method
US20120196242A1 (en) 2011-01-27 2012-08-02 Applied Materials, Inc. Substrate support with heater and rapid temperature change
US9051649B2 (en) * 2013-03-11 2015-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film deposition apparatus and method with improved heater cooling efficiency
KR20150090943A (en) * 2014-01-29 2015-08-07 세메스 주식회사 Apparatus and method for treating substrate

Also Published As

Publication number Publication date
TWI670386B (en) 2019-09-01
JP2017517877A (en) 2017-06-29
US20180025924A1 (en) 2018-01-25
KR102350501B1 (en) 2022-01-11
US9779971B2 (en) 2017-10-03
TW201540860A (en) 2015-11-01
JP6574442B2 (en) 2019-09-11
CN106133874B (en) 2019-09-06
WO2015156968A1 (en) 2015-10-15
US20150294886A1 (en) 2015-10-15
KR20160138303A (en) 2016-12-02
US10312116B2 (en) 2019-06-04
CN106133874A (en) 2016-11-16

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