SG11201609799QA - Air cavity package - Google Patents
Air cavity packageInfo
- Publication number
- SG11201609799QA SG11201609799QA SG11201609799QA SG11201609799QA SG11201609799QA SG 11201609799Q A SG11201609799Q A SG 11201609799QA SG 11201609799Q A SG11201609799Q A SG 11201609799QA SG 11201609799Q A SG11201609799Q A SG 11201609799QA SG 11201609799Q A SG11201609799Q A SG 11201609799QA
- Authority
- SG
- Singapore
- Prior art keywords
- air cavity
- cavity package
- package
- air
- cavity
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462002336P | 2014-05-23 | 2014-05-23 | |
PCT/US2015/032124 WO2015179733A1 (en) | 2014-05-23 | 2015-05-22 | Air cavity package |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201609799QA true SG11201609799QA (en) | 2016-12-29 |
Family
ID=54554818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201609799QA SG11201609799QA (en) | 2014-05-23 | 2015-05-22 | Air cavity package |
Country Status (7)
Country | Link |
---|---|
US (1) | US20170069560A1 (zh) |
EP (1) | EP3146560A4 (zh) |
JP (1) | JP2017518640A (zh) |
CN (1) | CN106537579A (zh) |
PH (1) | PH12016502321A1 (zh) |
SG (1) | SG11201609799QA (zh) |
WO (1) | WO2015179733A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6733968B2 (ja) * | 2015-08-31 | 2020-08-05 | 日立化成株式会社 | 腎移植後合併症を評価するための分子法 |
US11227806B2 (en) | 2016-05-09 | 2022-01-18 | Materion Corporation | Air cavity package using high temperature silicone adhesive |
US10163743B2 (en) | 2016-05-20 | 2018-12-25 | Materion Corporation | Copper flanged air cavity packages for high frequency devices |
US12074099B2 (en) | 2021-05-07 | 2024-08-27 | Materion Corporation | Microelectronics package assemblies and processes for making |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06252194A (ja) * | 1993-02-26 | 1994-09-09 | Toshiba Corp | 半導体装置 |
JPH07307420A (ja) * | 1994-05-12 | 1995-11-21 | Shinko Electric Ind Co Ltd | 半導体装置 |
JPH08115996A (ja) * | 1994-08-23 | 1996-05-07 | Tokuyama Corp | 半導体素子搭載用パッケージ |
JPH08113765A (ja) * | 1994-10-17 | 1996-05-07 | Mitsui Toatsu Chem Inc | 熱接着複合テープ |
JPH0945839A (ja) * | 1995-08-03 | 1997-02-14 | Shinko Electric Ind Co Ltd | 半導体装置用パッケージおよび半導体装置 |
US6056186A (en) * | 1996-06-25 | 2000-05-02 | Brush Wellman Inc. | Method for bonding a ceramic to a metal with a copper-containing shim |
US6399178B1 (en) * | 1998-07-20 | 2002-06-04 | Amerasia International Technology, Inc. | Rigid adhesive underfill preform, as for a flip-chip device |
US6072211A (en) * | 1998-08-03 | 2000-06-06 | Motorola, Inc. | Semiconductor package |
WO2001099124A1 (fr) * | 2000-06-21 | 2001-12-27 | Dai Nippon Printing Co., Ltd. | Stratifie et son utilisation |
US6472758B1 (en) * | 2000-07-20 | 2002-10-29 | Amkor Technology, Inc. | Semiconductor package including stacked semiconductor dies and bond wires |
US6511866B1 (en) * | 2001-07-12 | 2003-01-28 | Rjr Polymers, Inc. | Use of diverse materials in air-cavity packaging of electronic devices |
JP4178843B2 (ja) * | 2002-06-13 | 2008-11-12 | ソニー株式会社 | 冷却装置、電子機器装置及び冷却装置の製造方法 |
SG157957A1 (en) * | 2003-01-29 | 2010-01-29 | Interplex Qlp Inc | Package for integrated circuit die |
US7030472B2 (en) * | 2004-04-01 | 2006-04-18 | Agere Systems Inc. | Integrated circuit device having flexible leadframe |
JP2006128534A (ja) * | 2004-11-01 | 2006-05-18 | Sumitomo Metal Electronics Devices Inc | 高放熱型電子部品収納用パッケージ |
US7282797B2 (en) * | 2005-05-27 | 2007-10-16 | Motorola, Inc. | Graded liquid crystal polymer package |
JP4604893B2 (ja) * | 2005-07-19 | 2011-01-05 | 住友電気工業株式会社 | 複合多孔質樹脂基材及びその製造方法 |
US20070029664A1 (en) * | 2005-08-05 | 2007-02-08 | Cree Microwave, Llc. | Integrated circuit package and method of assembling the same |
JP2007088190A (ja) * | 2005-09-22 | 2007-04-05 | Sumitomo Metal Electronics Devices Inc | 高放熱型電子部品収納用パッケージ |
US7429790B2 (en) * | 2005-10-24 | 2008-09-30 | Freescale Semiconductor, Inc. | Semiconductor structure and method of manufacture |
JP2010512665A (ja) * | 2006-12-12 | 2010-04-22 | インタープレックス,キューエルピー,インコーポレイテッド | プラスチック電子素子パッケージ |
US20090028491A1 (en) * | 2007-07-26 | 2009-01-29 | General Electric Company | Interconnect structure |
US8067834B2 (en) * | 2007-08-21 | 2011-11-29 | Hvvi Semiconductors, Inc. | Semiconductor component |
US8143717B2 (en) * | 2008-06-16 | 2012-03-27 | Hcc Aegis, Inc. | Surface mount package with ceramic sidewalls |
JP5247626B2 (ja) * | 2008-08-22 | 2013-07-24 | 住友化学株式会社 | リードフレーム、樹脂パッケージ、半導体装置及び樹脂パッケージの製造方法 |
JP5442491B2 (ja) * | 2010-02-26 | 2014-03-12 | 新日鉄住金化学株式会社 | 熱伝導性金属−絶縁樹脂基板及びその製造方法 |
WO2012029549A1 (ja) * | 2010-08-30 | 2012-03-08 | 住友ベークライト株式会社 | 半導体パッケージおよび半導体装置 |
US8969132B2 (en) * | 2010-09-20 | 2015-03-03 | Nuvotronics, Llc | Device package and methods for the fabrication thereof |
JP2012094701A (ja) * | 2010-10-27 | 2012-05-17 | Kyocera Corp | 半導体素子収納用パッケージおよびこれを備えたモジュール |
-
2015
- 2015-05-22 JP JP2016568916A patent/JP2017518640A/ja active Pending
- 2015-05-22 WO PCT/US2015/032124 patent/WO2015179733A1/en active Application Filing
- 2015-05-22 US US14/652,326 patent/US20170069560A1/en not_active Abandoned
- 2015-05-22 CN CN201580040029.5A patent/CN106537579A/zh active Pending
- 2015-05-22 SG SG11201609799QA patent/SG11201609799QA/en unknown
- 2015-05-22 EP EP15796186.3A patent/EP3146560A4/en not_active Withdrawn
-
2016
- 2016-11-22 PH PH12016502321A patent/PH12016502321A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
US20170069560A1 (en) | 2017-03-09 |
CN106537579A (zh) | 2017-03-22 |
PH12016502321A1 (en) | 2017-01-30 |
WO2015179733A1 (en) | 2015-11-26 |
EP3146560A4 (en) | 2018-04-18 |
EP3146560A1 (en) | 2017-03-29 |
JP2017518640A (ja) | 2017-07-06 |
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