SG11201608640QA - Showerhead design - Google Patents
Showerhead designInfo
- Publication number
- SG11201608640QA SG11201608640QA SG11201608640QA SG11201608640QA SG11201608640QA SG 11201608640Q A SG11201608640Q A SG 11201608640QA SG 11201608640Q A SG11201608640Q A SG 11201608640QA SG 11201608640Q A SG11201608640Q A SG 11201608640QA SG 11201608640Q A SG11201608640Q A SG 11201608640QA
- Authority
- SG
- Singapore
- Prior art keywords
- showerhead design
- showerhead
- design
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461994584P | 2014-05-16 | 2014-05-16 | |
PCT/US2015/026687 WO2015175163A1 (en) | 2014-05-16 | 2015-04-20 | Showerhead design |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201608640QA true SG11201608640QA (en) | 2016-11-29 |
Family
ID=54480416
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201810178TA SG10201810178TA (en) | 2014-05-16 | 2015-04-20 | Showerhead design |
SG11201608640QA SG11201608640QA (en) | 2014-05-16 | 2015-04-20 | Showerhead design |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201810178TA SG10201810178TA (en) | 2014-05-16 | 2015-04-20 | Showerhead design |
Country Status (6)
Country | Link |
---|---|
US (2) | US10221483B2 (zh) |
KR (2) | KR102451499B1 (zh) |
CN (2) | CN110724938B (zh) |
SG (2) | SG10201810178TA (zh) |
TW (2) | TWI693100B (zh) |
WO (1) | WO2015175163A1 (zh) |
Families Citing this family (17)
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US10221483B2 (en) * | 2014-05-16 | 2019-03-05 | Applied Materials, Inc. | Showerhead design |
US9384949B2 (en) * | 2014-08-08 | 2016-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd | Gas-flow control method for plasma apparatus |
US10253412B2 (en) * | 2015-05-22 | 2019-04-09 | Lam Research Corporation | Deposition apparatus including edge plenum showerhead assembly |
KR102477302B1 (ko) * | 2015-10-05 | 2022-12-13 | 주성엔지니어링(주) | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
US10233543B2 (en) | 2015-10-09 | 2019-03-19 | Applied Materials, Inc. | Showerhead assembly with multiple fluid delivery zones |
US10954596B2 (en) * | 2016-12-08 | 2021-03-23 | Applied Materials, Inc. | Temporal atomic layer deposition process chamber |
KR102560283B1 (ko) * | 2018-01-24 | 2023-07-26 | 삼성전자주식회사 | 샤워 헤드를 설계하고 제조하는 장치 및 방법 |
JP7082514B2 (ja) * | 2018-04-04 | 2022-06-08 | 株式会社Kelk | 流体加熱装置 |
US10943768B2 (en) * | 2018-04-20 | 2021-03-09 | Applied Materials, Inc. | Modular high-frequency source with integrated gas distribution |
KR102576220B1 (ko) * | 2018-06-22 | 2023-09-07 | 삼성디스플레이 주식회사 | 박막 처리 장치 및 박막 처리 방법 |
KR102204026B1 (ko) * | 2018-07-06 | 2021-01-18 | 주식회사 케이에스엠컴포넌트 | 세라믹 샤워 헤드 및 그를 구비한 화학 기상 증착 장치 |
WO2020100376A1 (ja) * | 2018-11-14 | 2020-05-22 | 株式会社アルバック | 真空加熱装置、リフレクタ装置 |
KR102641752B1 (ko) * | 2018-11-21 | 2024-03-04 | 삼성전자주식회사 | 가스 주입 모듈, 기판 처리 장치, 및 그를 이용한 반도체 소자의 제조방법 |
CN113366145A (zh) * | 2019-01-31 | 2021-09-07 | 朗姆研究公司 | 具有可调式气体出口的喷头 |
CN112922935B (zh) * | 2019-12-05 | 2023-06-30 | 中微半导体设备(上海)股份有限公司 | 连接结构和等离子体处理装置 |
CN114086155B (zh) * | 2022-01-18 | 2022-04-15 | 北京中科重仪半导体科技有限公司 | 气体喷头 |
WO2024085913A1 (en) * | 2022-10-21 | 2024-04-25 | Applied Materials, Inc. | Process chamber with reflector |
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-
2015
- 2015-04-20 US US14/691,496 patent/US10221483B2/en active Active
- 2015-04-20 CN CN201910869304.4A patent/CN110724938B/zh active Active
- 2015-04-20 SG SG10201810178TA patent/SG10201810178TA/en unknown
- 2015-04-20 KR KR1020227011992A patent/KR102451499B1/ko active IP Right Grant
- 2015-04-20 SG SG11201608640QA patent/SG11201608640QA/en unknown
- 2015-04-20 KR KR1020167034416A patent/KR102386812B1/ko active IP Right Grant
- 2015-04-20 WO PCT/US2015/026687 patent/WO2015175163A1/en active Application Filing
- 2015-04-20 CN CN201580021593.2A patent/CN106463344B/zh active Active
- 2015-04-23 TW TW108117010A patent/TWI693100B/zh active
- 2015-04-23 TW TW104113077A patent/TWI662993B/zh active
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2019
- 2019-03-04 US US16/292,078 patent/US10626500B2/en active Active
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TW201936266A (zh) | 2019-09-16 |
WO2015175163A1 (en) | 2015-11-19 |
US10221483B2 (en) | 2019-03-05 |
CN110724938B (zh) | 2022-02-22 |
CN106463344A (zh) | 2017-02-22 |
SG10201810178TA (en) | 2018-12-28 |
CN106463344B (zh) | 2019-10-11 |
KR102386812B1 (ko) | 2022-04-15 |
TWI662993B (zh) | 2019-06-21 |
US10626500B2 (en) | 2020-04-21 |
TWI693100B (zh) | 2020-05-11 |
US20190194810A1 (en) | 2019-06-27 |
KR102451499B1 (ko) | 2022-10-06 |
CN110724938A (zh) | 2020-01-24 |
KR20170005072A (ko) | 2017-01-11 |
TW201600174A (zh) | 2016-01-01 |
KR20220048058A (ko) | 2022-04-19 |
US20150329966A1 (en) | 2015-11-19 |
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