SG11201607553QA - Polishing composition - Google Patents
Polishing compositionInfo
- Publication number
- SG11201607553QA SG11201607553QA SG11201607553QA SG11201607553QA SG11201607553QA SG 11201607553Q A SG11201607553Q A SG 11201607553QA SG 11201607553Q A SG11201607553Q A SG 11201607553QA SG 11201607553Q A SG11201607553Q A SG 11201607553QA SG 11201607553Q A SG11201607553Q A SG 11201607553QA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing composition
- polishing
- composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/028—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014069279A JP6343160B2 (ja) | 2014-03-28 | 2014-03-28 | 研磨用組成物 |
PCT/JP2015/052761 WO2015146282A1 (ja) | 2014-03-28 | 2015-01-30 | 研磨用組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201607553QA true SG11201607553QA (en) | 2016-10-28 |
Family
ID=54194822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201607553QA SG11201607553QA (en) | 2014-03-28 | 2015-01-30 | Polishing composition |
Country Status (8)
Country | Link |
---|---|
US (1) | US10144907B2 (ko) |
EP (1) | EP3124570B1 (ko) |
JP (1) | JP6343160B2 (ko) |
KR (3) | KR20210154887A (ko) |
CN (1) | CN106133104A (ko) |
SG (1) | SG11201607553QA (ko) |
TW (1) | TWI671391B (ko) |
WO (1) | WO2015146282A1 (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101944228B1 (ko) * | 2015-09-30 | 2019-04-17 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
KR102645587B1 (ko) * | 2016-02-29 | 2024-03-11 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 이것을 사용한 연마 방법 |
WO2018124226A1 (ja) * | 2016-12-28 | 2018-07-05 | ニッタ・ハース株式会社 | 研磨用組成物及び研磨方法 |
JP7093765B2 (ja) * | 2017-03-14 | 2022-06-30 | 株式会社フジミインコーポレーテッド | 表面処理組成物、その製造方法、およびこれを用いた表面処理方法 |
JP7216478B2 (ja) * | 2017-09-22 | 2023-02-01 | 株式会社フジミインコーポレーテッド | 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法 |
KR102588218B1 (ko) * | 2017-09-22 | 2023-10-13 | 가부시키가이샤 후지미인코퍼레이티드 | 표면 처리 조성물, 표면 처리 조성물의 제조 방법, 표면 처리 방법 및 반도체 기판의 제조 방법 |
JP6955441B2 (ja) * | 2017-12-27 | 2021-10-27 | 花王株式会社 | 合成石英ガラス基板用研磨液組成物 |
JP7421855B2 (ja) * | 2018-03-02 | 2024-01-25 | Agc株式会社 | 研磨剤と研磨方法、および研磨用添加液 |
WO2019187969A1 (ja) * | 2018-03-30 | 2019-10-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
TWI821407B (zh) * | 2018-09-28 | 2023-11-11 | 日商福吉米股份有限公司 | 研磨用組合物、研磨方法及基板之製造方法 |
US11702570B2 (en) * | 2019-03-27 | 2023-07-18 | Fujimi Incorporated | Polishing composition |
KR102520371B1 (ko) * | 2019-10-18 | 2023-04-10 | 삼성에스디아이 주식회사 | 실리콘 질화막 식각용 조성물 및 이를 이용한 실리콘 질화막 식각 방법 |
JP7409918B2 (ja) * | 2020-03-13 | 2024-01-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
KR20240045086A (ko) | 2022-09-29 | 2024-04-05 | 가부시키가이샤 후지미인코퍼레이티드 | 표면 처리 조성물, 표면 처리 방법, 및 반도체 기판의 제조 방법 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3265333B2 (ja) * | 1993-11-18 | 2002-03-11 | 株式会社ピュアレックス | シリコンウェーハ洗浄液及び該洗浄液を用いたシリコンウェーハの洗浄方法 |
EP1137056B1 (en) * | 1998-08-31 | 2013-07-31 | Hitachi Chemical Company, Ltd. | Abrasive liquid for metal and method for polishing |
JP2003109930A (ja) * | 2001-09-28 | 2003-04-11 | Mitsubishi Chemicals Corp | 半導体デバイス用基板の洗浄液及び洗浄方法 |
JP4304988B2 (ja) * | 2002-01-28 | 2009-07-29 | 三菱化学株式会社 | 半導体デバイス用基板の洗浄方法 |
JP4212861B2 (ja) * | 2002-09-30 | 2009-01-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法 |
US20040074518A1 (en) * | 2002-10-22 | 2004-04-22 | Texas Instruments Incorporated | Surfactants for post-chemical mechanical polishing storage and cleaning |
WO2004042812A1 (ja) * | 2002-11-08 | 2004-05-21 | Fujimi Incorporated | 研磨用組成物及びリンス用組成物 |
TWI362415B (en) * | 2003-10-27 | 2012-04-21 | Wako Pure Chem Ind Ltd | Novel detergent and method for cleaning |
KR100640600B1 (ko) | 2003-12-12 | 2006-11-01 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법 |
CN1654617A (zh) | 2004-02-10 | 2005-08-17 | 捷时雅株式会社 | 清洗用组合物和半导体基板的清洗方法及半导体装置的制造方法 |
US20050205835A1 (en) * | 2004-03-19 | 2005-09-22 | Tamboli Dnyanesh C | Alkaline post-chemical mechanical planarization cleaning compositions |
JP2007103515A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨方法 |
TW200801178A (en) * | 2006-03-22 | 2008-01-01 | Fujifilm Corp | Cleaning solution for substrate for use in semiconductor device and cleaning method using the same |
JP4804986B2 (ja) * | 2006-03-30 | 2011-11-02 | 富士フイルム株式会社 | 半導体デバイス用基板の洗浄液及びそれを用いた洗浄方法 |
WO2009041697A1 (ja) | 2007-09-28 | 2009-04-02 | Nitta Haas Incorporated | 研磨用組成物 |
JP5474400B2 (ja) * | 2008-07-03 | 2014-04-16 | 株式会社フジミインコーポレーテッド | 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法 |
JP5371416B2 (ja) * | 2008-12-25 | 2013-12-18 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
JP2010171362A (ja) * | 2008-12-26 | 2010-08-05 | Fujifilm Corp | 半導体デバイス用洗浄剤及びそれを用いた半導体デバイスの製造方法 |
DE112011101518B4 (de) * | 2010-04-30 | 2019-05-09 | Sumco Corporation | Verfahren zum Polieren von Siliziumwafern |
KR20130014588A (ko) * | 2010-07-02 | 2013-02-07 | 가부시키가이샤 사무코 | 실리콘 웨이퍼의 연마 방법 |
WO2012039390A1 (ja) * | 2010-09-24 | 2012-03-29 | 株式会社 フジミインコーポレーテッド | 研磨用組成物およびリンス用組成物 |
JP2012156181A (ja) * | 2011-01-24 | 2012-08-16 | Hitachi Chem Co Ltd | 半導体基板用洗浄液及びそれを用いた洗浄方法 |
US20130053291A1 (en) * | 2011-08-22 | 2013-02-28 | Atsushi Otake | Composition for cleaning substrates post-chemical mechanical polishing |
SG10201608964TA (en) * | 2012-04-27 | 2016-12-29 | Wako Pure Chem Ind Ltd | Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface |
JP2012145968A (ja) * | 2012-05-08 | 2012-08-02 | Asahi Kasei Chemicals Corp | リソグラフィー材料およびレジストパターンの製造方法 |
-
2014
- 2014-03-28 JP JP2014069279A patent/JP6343160B2/ja active Active
-
2015
- 2015-01-30 WO PCT/JP2015/052761 patent/WO2015146282A1/ja active Application Filing
- 2015-01-30 US US15/129,326 patent/US10144907B2/en active Active
- 2015-01-30 KR KR1020217040785A patent/KR20210154887A/ko not_active Application Discontinuation
- 2015-01-30 EP EP15769785.5A patent/EP3124570B1/en active Active
- 2015-01-30 KR KR1020167026324A patent/KR20160138049A/ko active Application Filing
- 2015-01-30 SG SG11201607553QA patent/SG11201607553QA/en unknown
- 2015-01-30 KR KR1020217040784A patent/KR102451385B1/ko active IP Right Grant
- 2015-01-30 CN CN201580016859.4A patent/CN106133104A/zh active Pending
- 2015-02-09 TW TW104104252A patent/TWI671391B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR102451385B1 (ko) | 2022-10-07 |
TW201536903A (zh) | 2015-10-01 |
JP2015189899A (ja) | 2015-11-02 |
US10144907B2 (en) | 2018-12-04 |
TWI671391B (zh) | 2019-09-11 |
EP3124570B1 (en) | 2020-09-09 |
EP3124570A4 (en) | 2017-02-08 |
KR20160138049A (ko) | 2016-12-02 |
KR20210154887A (ko) | 2021-12-21 |
CN106133104A (zh) | 2016-11-16 |
EP3124570A1 (en) | 2017-02-01 |
US20170175053A1 (en) | 2017-06-22 |
KR20210154886A (ko) | 2021-12-21 |
WO2015146282A1 (ja) | 2015-10-01 |
JP6343160B2 (ja) | 2018-06-13 |
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