SG11201602010VA - Heat treatment method - Google Patents

Heat treatment method

Info

Publication number
SG11201602010VA
SG11201602010VA SG11201602010VA SG11201602010VA SG11201602010VA SG 11201602010V A SG11201602010V A SG 11201602010VA SG 11201602010V A SG11201602010V A SG 11201602010VA SG 11201602010V A SG11201602010V A SG 11201602010VA SG 11201602010V A SG11201602010V A SG 11201602010VA
Authority
SG
Singapore
Prior art keywords
heat treatment
treatment method
heat
treatment
Prior art date
Application number
SG11201602010VA
Other languages
English (en)
Inventor
Masahiro Kato
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of SG11201602010VA publication Critical patent/SG11201602010VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG11201602010VA 2013-11-26 2014-10-27 Heat treatment method SG11201602010VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013244374A JP6086056B2 (ja) 2013-11-26 2013-11-26 熱処理方法
PCT/JP2014/005417 WO2015079621A1 (ja) 2013-11-26 2014-10-27 熱処理方法

Publications (1)

Publication Number Publication Date
SG11201602010VA true SG11201602010VA (en) 2016-04-28

Family

ID=53198599

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201602010VA SG11201602010VA (en) 2013-11-26 2014-10-27 Heat treatment method

Country Status (8)

Country Link
US (1) US9922842B2 (de)
EP (1) EP3035373B1 (de)
JP (1) JP6086056B2 (de)
KR (1) KR102105367B1 (de)
CN (1) CN105580119B (de)
SG (1) SG11201602010VA (de)
TW (1) TWI588904B (de)
WO (1) WO2015079621A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7251458B2 (ja) * 2019-12-05 2023-04-04 株式会社Sumco シリコンウェーハの製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990077350A (ko) 1996-02-29 1999-10-25 히가시 데쓰로 반도체웨이퍼의 열처리용 보트
JP3505934B2 (ja) * 1996-09-10 2004-03-15 東京エレクトロン株式会社 被処理体の支持構造及び熱処理装置
JPH10233368A (ja) * 1997-02-20 1998-09-02 Toshiba Ceramics Co Ltd 縦型ウエハボート
JP2002324830A (ja) * 2001-02-20 2002-11-08 Mitsubishi Electric Corp 基板熱処理用保持具、基板熱処理装置、半導体装置の製造方法、基板熱処理用保持具の製造方法及び基板熱処理用保持具の構造決定方法
JP2002274983A (ja) * 2001-03-12 2002-09-25 Tokai Konetsu Kogyo Co Ltd ＳｉＣ膜を被覆した半導体製造装置用部材およびその製造方法
JP4396105B2 (ja) * 2003-02-05 2010-01-13 信越半導体株式会社 縦型熱処理用ボート及び半導体ウエーハの熱処理方法
US7393207B2 (en) * 2003-03-26 2008-07-01 Shin-Etsu Handotai Co., Ltd. Wafer support tool for heat treatment and heat treatment apparatus
JP2005101161A (ja) 2003-09-24 2005-04-14 Hitachi Kokusai Electric Inc 熱処理用支持具、熱処理装置、熱処理方法、基板の製造方法及び半導体装置の製造方法
US7888685B2 (en) 2004-07-27 2011-02-15 Memc Electronic Materials, Inc. High purity silicon carbide structures
US7601227B2 (en) 2005-08-05 2009-10-13 Sumco Corporation High purification method of jig for semiconductor heat treatment
EP1793021A3 (de) * 2005-12-02 2009-01-14 Rohm and Haas Electronic Materials LLC Verfahren zur Behandlung von Halbleitern unter Verwendung von einem Gegenstand aus Silizium Karbid
JP4290187B2 (ja) * 2006-09-27 2009-07-01 コバレントマテリアル株式会社 半導体ウェーハ熱処理用ボートの表面清浄化方法
KR100818842B1 (ko) * 2006-12-27 2008-04-01 주식회사 실트론 웨이퍼의 열처리시 슬립을 방지할 수 있는 웨이퍼 지지 핀및 웨이퍼의 열처리 방법
JP5051909B2 (ja) 2007-03-30 2012-10-17 コバレントマテリアル株式会社 縦型ウエハボート
JP5211543B2 (ja) * 2007-05-01 2013-06-12 信越半導体株式会社 ウエーハ支持治具およびこれを備えた縦型熱処理用ボートならびにウエーハ支持治具の製造方法
JP5071217B2 (ja) * 2008-04-17 2012-11-14 信越半導体株式会社 縦型熱処理用ボートおよびそれを用いたシリコンウエーハの熱処理方法
JP2010283153A (ja) * 2009-06-04 2010-12-16 Hitachi Kokusai Electric Inc 半導体装置の製造方法、熱処理装置、及び熱処理用部材
JP5439305B2 (ja) 2010-07-14 2014-03-12 信越半導体株式会社 シリコン基板の製造方法及びシリコン基板
US20130023108A1 (en) * 2011-07-22 2013-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate
JP5997552B2 (ja) 2011-09-27 2016-09-28 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
TWI523107B (zh) 2011-09-27 2016-02-21 環球晶圓日本股份有限公司 矽晶圓之熱處理方法

Also Published As

Publication number Publication date
WO2015079621A1 (ja) 2015-06-04
CN105580119A (zh) 2016-05-11
KR102105367B1 (ko) 2020-04-28
JP2015103717A (ja) 2015-06-04
US9922842B2 (en) 2018-03-20
TWI588904B (zh) 2017-06-21
EP3035373A1 (de) 2016-06-22
KR20160089342A (ko) 2016-07-27
CN105580119B (zh) 2018-02-06
JP6086056B2 (ja) 2017-03-01
EP3035373A4 (de) 2017-04-12
TW201526112A (zh) 2015-07-01
EP3035373B1 (de) 2018-06-06
US20160233107A1 (en) 2016-08-11

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