SG11201602010VA - Heat treatment method - Google Patents

Heat treatment method

Info

Publication number
SG11201602010VA
SG11201602010VA SG11201602010VA SG11201602010VA SG11201602010VA SG 11201602010V A SG11201602010V A SG 11201602010VA SG 11201602010V A SG11201602010V A SG 11201602010VA SG 11201602010V A SG11201602010V A SG 11201602010VA SG 11201602010V A SG11201602010V A SG 11201602010VA
Authority
SG
Singapore
Prior art keywords
heat treatment
treatment method
heat
treatment
Prior art date
Application number
SG11201602010VA
Inventor
Masahiro Kato
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of SG11201602010VA publication Critical patent/SG11201602010VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG11201602010VA 2013-11-26 2014-10-27 Heat treatment method SG11201602010VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013244374A JP6086056B2 (en) 2013-11-26 2013-11-26 Heat treatment method
PCT/JP2014/005417 WO2015079621A1 (en) 2013-11-26 2014-10-27 Heat treatment method

Publications (1)

Publication Number Publication Date
SG11201602010VA true SG11201602010VA (en) 2016-04-28

Family

ID=53198599

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201602010VA SG11201602010VA (en) 2013-11-26 2014-10-27 Heat treatment method

Country Status (8)

Country Link
US (1) US9922842B2 (en)
EP (1) EP3035373B1 (en)
JP (1) JP6086056B2 (en)
KR (1) KR102105367B1 (en)
CN (1) CN105580119B (en)
SG (1) SG11201602010VA (en)
TW (1) TWI588904B (en)
WO (1) WO2015079621A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7251458B2 (en) * 2019-12-05 2023-04-04 株式会社Sumco Silicon wafer manufacturing method

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0884769A1 (en) 1996-02-29 1998-12-16 Tokyo Electron Limited Heat-treating boat for semiconductor wafer
JP3505934B2 (en) * 1996-09-10 2004-03-15 東京エレクトロン株式会社 Object support structure and heat treatment apparatus
JPH10233368A (en) * 1997-02-20 1998-09-02 Toshiba Ceramics Co Ltd Vertical wafer port
JP2002324830A (en) * 2001-02-20 2002-11-08 Mitsubishi Electric Corp Holding tool for substrate heat treatment, substrate heat treating equipment method for manufacturing semiconductor device, method for manufacturing the holding tool for substrate heat treatment and method for deciding structure of the holding tool for substrate heat treatment
JP2002274983A (en) * 2001-03-12 2002-09-25 Tokai Konetsu Kogyo Co Ltd Member for semiconductor manufacturing apparatus coated with sic film and method of manufacturing the same
JP4396105B2 (en) * 2003-02-05 2010-01-13 信越半導体株式会社 Vertical heat treatment boat and semiconductor wafer heat treatment method
JP4363401B2 (en) * 2003-03-26 2009-11-11 信越半導体株式会社 Heat treatment wafer support and heat treatment apparatus
JP2005101161A (en) 2003-09-24 2005-04-14 Hitachi Kokusai Electric Inc Supporting tool for heat treatment, heat treatment apparatus, heat treatment method, method of manufacturing substrate, and method of manufacturing semiconductor device
US7888685B2 (en) 2004-07-27 2011-02-15 Memc Electronic Materials, Inc. High purity silicon carbide structures
US7601227B2 (en) 2005-08-05 2009-10-13 Sumco Corporation High purification method of jig for semiconductor heat treatment
KR101332206B1 (en) * 2005-12-02 2013-11-25 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. Semiconductor processing
JP4290187B2 (en) * 2006-09-27 2009-07-01 コバレントマテリアル株式会社 Surface cleaning method for semiconductor wafer heat treatment boat
KR100818842B1 (en) * 2006-12-27 2008-04-01 주식회사 실트론 Wafer support pin in capable of preventing slip during thermal treatment to wafer and thermal treatment method to wafer
JP5051909B2 (en) * 2007-03-30 2012-10-17 コバレントマテリアル株式会社 Vertical wafer boat
JP5211543B2 (en) * 2007-05-01 2013-06-12 信越半導体株式会社 Wafer support jig, vertical heat treatment boat equipped with the same, and method for manufacturing wafer support jig
JP5071217B2 (en) * 2008-04-17 2012-11-14 信越半導体株式会社 Vertical heat treatment boat and silicon wafer heat treatment method using the same
JP2010283153A (en) * 2009-06-04 2010-12-16 Hitachi Kokusai Electric Inc Method for manufacturing semiconductor device, heat treatment apparatus, and member for heat treatment
JP5439305B2 (en) * 2010-07-14 2014-03-12 信越半導体株式会社 Silicon substrate manufacturing method and silicon substrate
JP2013048218A (en) * 2011-07-22 2013-03-07 Semiconductor Energy Lab Co Ltd Method for manufacturing soi substrate
TWI523107B (en) 2011-09-27 2016-02-21 環球晶圓日本股份有限公司 Method for heat-treating silicon wafer
JP5997552B2 (en) 2011-09-27 2016-09-28 グローバルウェーハズ・ジャパン株式会社 Heat treatment method for silicon wafer

Also Published As

Publication number Publication date
US20160233107A1 (en) 2016-08-11
EP3035373B1 (en) 2018-06-06
CN105580119A (en) 2016-05-11
KR20160089342A (en) 2016-07-27
WO2015079621A1 (en) 2015-06-04
CN105580119B (en) 2018-02-06
EP3035373A4 (en) 2017-04-12
KR102105367B1 (en) 2020-04-28
TWI588904B (en) 2017-06-21
JP2015103717A (en) 2015-06-04
JP6086056B2 (en) 2017-03-01
EP3035373A1 (en) 2016-06-22
US9922842B2 (en) 2018-03-20
TW201526112A (en) 2015-07-01

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