SG11201601555VA - Mechanically deformed metal particles - Google Patents

Mechanically deformed metal particles

Info

Publication number
SG11201601555VA
SG11201601555VA SG11201601555VA SG11201601555VA SG11201601555VA SG 11201601555V A SG11201601555V A SG 11201601555VA SG 11201601555V A SG11201601555V A SG 11201601555VA SG 11201601555V A SG11201601555V A SG 11201601555VA SG 11201601555V A SG11201601555V A SG 11201601555VA
Authority
SG
Singapore
Prior art keywords
metal particles
mechanically deformed
deformed metal
mechanically
particles
Prior art date
Application number
SG11201601555VA
Other languages
English (en)
Inventor
Richard Hamilton Sewell
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of SG11201601555VA publication Critical patent/SG11201601555VA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023Alloys based on aluminium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02366Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
SG11201601555VA 2013-09-27 2014-09-24 Mechanically deformed metal particles SG11201601555VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/039,837 US9536632B2 (en) 2013-09-27 2013-09-27 Mechanically deformed metal particles
PCT/US2014/057306 WO2015048192A1 (en) 2013-09-27 2014-09-24 Mechanically deformed metal particles

Publications (1)

Publication Number Publication Date
SG11201601555VA true SG11201601555VA (en) 2016-04-28

Family

ID=52738907

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201601555VA SG11201601555VA (en) 2013-09-27 2014-09-24 Mechanically deformed metal particles

Country Status (14)

Country Link
US (1) US9536632B2 (ja)
EP (1) EP3050121B1 (ja)
JP (1) JP6510537B2 (ja)
KR (1) KR102306614B1 (ja)
CN (1) CN105493294B (ja)
AU (1) AU2014326714B2 (ja)
BR (1) BR112016006669B1 (ja)
CL (1) CL2016000668A1 (ja)
MX (1) MX358427B (ja)
MY (1) MY176040A (ja)
SA (1) SA516370819B1 (ja)
SG (1) SG11201601555VA (ja)
TW (1) TWI660516B (ja)
WO (1) WO2015048192A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017091782A1 (en) * 2015-11-24 2017-06-01 Plant Pv, Inc Fired multilayer stacks for use in integrated circuits and solar cells
US10000645B2 (en) 2015-11-24 2018-06-19 PLANT PV, Inc. Methods of forming solar cells with fired multilayer film stacks
US9871150B1 (en) * 2016-07-01 2018-01-16 Sunpower Corporation Protective region for metallization of solar cells
CN110120434B (zh) * 2019-06-18 2024-03-26 合肥晶澳太阳能科技有限公司 电池片及其制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
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SE514600C2 (sv) * 1999-05-25 2001-03-19 Forskarpatent I Uppsala Ab Metod för tillverkning av nanostrukturerade tunnfilmselektroder
DE10020412A1 (de) 2000-04-26 2001-11-08 Univ Konstanz Verfahren und Vorrichtung zum Anbringen einer Metallfolie an einen Halbleiterwafer, Halbleitervorrichtung und Verwendung
JP4244053B2 (ja) * 2006-06-16 2009-03-25 エプソントヨコム株式会社 圧電デバイスを備えた電子モジュール
EP2058868A4 (en) * 2006-08-29 2010-01-27 Hitachi Chemical Co Ltd CONDUCTIVE ADHESIVE FILM AND SOLAR CELL MODULE
JP2008085227A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 太陽電池モジュール
JP5449849B2 (ja) * 2009-04-30 2014-03-19 シャープ株式会社 太陽電池およびその製造方法
EP2553733A2 (de) * 2010-04-01 2013-02-06 Somont GmbH Solarzellen und herstellungsverfahren dafür
JP2012009546A (ja) * 2010-06-23 2012-01-12 Hitachi Ltd 薄膜製造方法、薄膜付基板および薄膜製造装置
JP2012018941A (ja) * 2010-07-06 2012-01-26 Sharp Corp 裏面電極型太陽電池セル、裏面電極型太陽電池モジュールおよび裏面電極型太陽電池セルの製造方法。
KR20120010920A (ko) 2010-07-27 2012-02-06 엘지디스플레이 주식회사 박막 태양전지 및 그 제조방법
US20120037216A1 (en) * 2010-08-13 2012-02-16 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
CN102376379B (zh) * 2010-08-13 2016-04-20 三星电子株式会社 导电糊料及包含用其形成的电极的电子器件和太阳能电池
KR101110826B1 (ko) * 2010-08-17 2012-02-24 엘지전자 주식회사 태양전지 패널
KR101741682B1 (ko) * 2010-08-24 2017-05-31 삼성전자주식회사 도전성 페이스트와 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지
WO2012054245A1 (en) 2010-10-19 2012-04-26 Air Products And Chemicals, Inc. A conductive composition and method for making conductive features on thin film pv cells
TW201251084A (en) * 2010-12-02 2012-12-16 Applied Nanotech Holdings Inc Nanoparticle inks for solar cells
KR101197575B1 (ko) 2011-02-11 2012-11-06 한밭대학교 산학협력단 태양전지 및 그 제조 방법
US20130105806A1 (en) 2011-11-01 2013-05-02 Guojun Liu Structures incorporating silicon nanoparticle inks, densified silicon materials from nanoparticle silicon deposits and corresponding methods
JP2013164990A (ja) * 2012-02-10 2013-08-22 Taiyo Holdings Co Ltd 電極、電極の製造方法およびそれを用いた電子デバイス
JP5124691B1 (ja) * 2012-03-21 2013-01-23 有限会社 ナプラ 導電性微粉末、導電性ペースト及び電子部品

Also Published As

Publication number Publication date
BR112016006669B1 (pt) 2022-04-05
BR112016006669A2 (pt) 2017-09-12
MX2016003284A (es) 2016-10-04
AU2014326714A1 (en) 2016-01-07
EP3050121A4 (en) 2016-10-19
EP3050121B1 (en) 2022-02-23
EP3050121A1 (en) 2016-08-03
TWI660516B (zh) 2019-05-21
TW201523897A (zh) 2015-06-16
AU2014326714B2 (en) 2018-10-04
JP2016532318A (ja) 2016-10-13
MY176040A (en) 2020-07-22
CL2016000668A1 (es) 2016-10-14
JP6510537B2 (ja) 2019-05-08
CN105493294B (zh) 2018-11-20
WO2015048192A1 (en) 2015-04-02
SA516370819B1 (ar) 2019-07-10
KR20160062068A (ko) 2016-06-01
CN105493294A (zh) 2016-04-13
US9536632B2 (en) 2017-01-03
US20150090326A1 (en) 2015-04-02
MX358427B (es) 2018-08-20
KR102306614B1 (ko) 2021-09-29

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