HK1215241A1 - 納米粒子 - Google Patents

納米粒子

Info

Publication number
HK1215241A1
HK1215241A1 HK16103112.9A HK16103112A HK1215241A1 HK 1215241 A1 HK1215241 A1 HK 1215241A1 HK 16103112 A HK16103112 A HK 16103112A HK 1215241 A1 HK1215241 A1 HK 1215241A1
Authority
HK
Hong Kong
Prior art keywords
cu2xsny4
nanoparticles
nanoparticles cu2xsny4
cu2xsny4 nanoparticles
Prior art date
Application number
HK16103112.9A
Other languages
English (en)
Inventor
Nathalie Gresty
James Harris
Ombretta Masala
Nigel Pickett
Laura Wylde
Christopher Newman
Original Assignee
Nanoco Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanoco Technologies Ltd filed Critical Nanoco Technologies Ltd
Publication of HK1215241A1 publication Critical patent/HK1215241A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/006—Compounds containing, besides tin, two or more other elements, with the exception of oxygen or hydrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/30—Three-dimensional structures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/89—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by mass-spectroscopy
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/10—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Luminescent Compositions (AREA)
  • Photovoltaic Devices (AREA)
  • Powder Metallurgy (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
HK16103112.9A 2013-03-15 2016-03-17 納米粒子 HK1215241A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361799456P 2013-03-15 2013-03-15
PCT/IB2014/001140 WO2014140900A2 (en) 2013-03-15 2014-03-13 Cu2xsny4 nanoparticles

Publications (1)

Publication Number Publication Date
HK1215241A1 true HK1215241A1 (zh) 2016-08-19

Family

ID=51263431

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16103112.9A HK1215241A1 (zh) 2013-03-15 2016-03-17 納米粒子

Country Status (7)

Country Link
US (3) US10177262B2 (zh)
EP (2) EP2994422B1 (zh)
JP (1) JP6232078B2 (zh)
KR (1) KR101788570B1 (zh)
CN (2) CN105102375A (zh)
HK (1) HK1215241A1 (zh)
WO (1) WO2014140900A2 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10888836B2 (en) * 2014-07-25 2021-01-12 Chemical and Metal Technologies LLC Extraction of target materials using CZTS sorbent
TWI608076B (zh) * 2015-03-04 2017-12-11 納諾柯技術有限公司 以金屬硫醇聚合物穩定化的量子點
CN105460903B (zh) * 2015-09-22 2016-11-23 苏州星烁纳米科技有限公司 一种纳米晶体制备方法、纳米晶体及气体溶液的制备和保存装置
US20170125650A1 (en) 2015-11-02 2017-05-04 Nanoco Technologies Ltd. Display devices comprising green-emitting quantum dots and red KSF phosphor
KR101852897B1 (ko) * 2016-04-07 2018-06-04 한국화학연구원 초음파 조사를 이용한 칼코지나이드계 금속나노입자의 제조방법 및 이로 제조된 칼코지나이드계 금속나노입자
CN106277038B (zh) * 2016-07-27 2017-09-22 昆明理工大学 一种微纳复合结构纤锌矿铜锌锡硫微粒的制备方法
JP6718800B2 (ja) * 2016-11-28 2020-07-08 株式会社日本触媒 硫化物、半導体材料、及び熱電変換材料
CN108461556A (zh) * 2018-01-26 2018-08-28 南京邮电大学 制备高效czts太阳能电池的前驱体溶液及其电池制备与应用
CN109453794B (zh) * 2018-11-12 2021-04-09 国家海洋局第一海洋研究所 一种Cu2ZnSn(SxSe1-x)4合金纳米材料作为模拟酶的应用
CN111450850B (zh) * 2020-03-27 2023-03-28 肇庆市华师大光电产业研究院 一种四元铋基硫族壳-核纳米球及其制备方法和应用
CN111924810B (zh) * 2020-07-28 2022-04-19 中国科学技术大学 一种铁钴双金属硒化物纳米材料、其制备方法及锂离子电池

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080302418A1 (en) * 2006-03-18 2008-12-11 Benyamin Buller Elongated Photovoltaic Devices in Casings
US20080264479A1 (en) * 2007-04-25 2008-10-30 Nanoco Technologies Limited Hybrid Photovoltaic Cells and Related Methods
KR101321682B1 (ko) 2008-08-20 2013-10-23 닛뽕 카바이도 고교 가부시키가이샤 광학 시트 제조 장치 및 광학 시트의 제조 방법
JP5115983B2 (ja) 2008-09-01 2013-01-09 国立大学法人東北大学 超臨界水熱合成法による有機修飾金属硫化物ナノ粒子の合成法
WO2010098369A1 (ja) * 2009-02-27 2010-09-02 国立大学法人名古屋大学 半導体ナノ粒子及びその製法
EP2435359A4 (en) * 2009-05-26 2016-04-20 Purdue Research Foundation SYNTHESIS OF SEVERAL DIFFERENT CHALCOGENIDE NANOPARTICLES WITH CU, ZN, SN, S AND SE
FR2949773B1 (fr) 2009-09-10 2016-01-01 Univ Toulouse 3 Paul Sabatier Materiau solide a l'etat divise, procede de fabrication d'un tel materiau et utilisation d'un tel materiau dans une cellule photovoltaique.
JP2013512311A (ja) * 2009-11-25 2013-04-11 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 結晶性銅カルコゲニドナノ粒子の水性製造方法、そのように製造されたナノ粒子、ならびにこれらのナノ粒子を組み込んだインクおよびコーテッド基板
EP2504281A1 (en) * 2009-11-25 2012-10-03 E. I. du Pont de Nemours and Company Syntheses of quaternary chalcogenides in cesium, rubidium, barium and lanthanum containing fluxes
CN101905901A (zh) * 2010-07-23 2010-12-08 中国科学院上海技术物理研究所 Cu2CdSnS4纳米晶的制备方法
US20140144500A1 (en) * 2010-11-22 2014-05-29 E I Du Pont De Nemours And Company Semiconductor inks films, coated substrates and methods of preparation
US8999768B2 (en) 2011-03-14 2015-04-07 Fuji Electric Co., Ltd. Semiconductor device manufacturing method
CN102249344A (zh) * 2011-06-09 2011-11-23 上海大学 Cu2FeSnS4纳米晶的热注入制备方法
WO2013172949A1 (en) * 2012-05-14 2013-11-21 E. I. Du Pont De Nemours And Company Dispersible metal chalcogenide nanoparticles
WO2014136562A1 (ja) * 2013-03-07 2014-09-12 株式会社村田製作所 化合物半導体超微粒子、超微粒子薄膜及び光電変換デバイス

Also Published As

Publication number Publication date
WO2014140900A2 (en) 2014-09-18
CN108383090A (zh) 2018-08-10
KR20150132443A (ko) 2015-11-25
EP2994422B1 (en) 2019-04-24
US20160218232A1 (en) 2016-07-28
EP2994422A2 (en) 2016-03-16
US10177263B2 (en) 2019-01-08
JP2016516653A (ja) 2016-06-09
WO2014140900A3 (en) 2015-01-08
US20140264192A1 (en) 2014-09-18
US10177262B2 (en) 2019-01-08
US10756221B2 (en) 2020-08-25
US20190019906A1 (en) 2019-01-17
KR101788570B1 (ko) 2017-10-19
CN105102375A (zh) 2015-11-25
JP6232078B2 (ja) 2017-11-15
EP3508450A1 (en) 2019-07-10

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