HK1215239A1 - 納米粒子 - Google Patents

納米粒子

Info

Publication number
HK1215239A1
HK1215239A1 HK16103114.7A HK16103114A HK1215239A1 HK 1215239 A1 HK1215239 A1 HK 1215239A1 HK 16103114 A HK16103114 A HK 16103114A HK 1215239 A1 HK1215239 A1 HK 1215239A1
Authority
HK
Hong Kong
Prior art keywords
cu2znsns4
nanoparticles
cu2znsns4 nanoparticles
nanoparticles cu2znsns4
Prior art date
Application number
HK16103114.7A
Other languages
English (en)
Inventor
Nathalie Gresty
Omberetta Masala
James Harris
Nigel Pickett
Original Assignee
Nanoco Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanoco Technologies Ltd filed Critical Nanoco Technologies Ltd
Publication of HK1215239A1 publication Critical patent/HK1215239A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/006—Compounds containing, besides tin, two or more other elements, with the exception of oxygen or hydrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Powder Metallurgy (AREA)
  • Luminescent Compositions (AREA)
HK16103114.7A 2013-03-15 2016-03-17 納米粒子 HK1215239A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361798084P 2013-03-15 2013-03-15
PCT/IB2014/001118 WO2014140889A2 (en) 2013-03-15 2014-03-14 Cu2znsns4 nanoparticles

Publications (1)

Publication Number Publication Date
HK1215239A1 true HK1215239A1 (zh) 2016-08-19

Family

ID=51176411

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16103114.7A HK1215239A1 (zh) 2013-03-15 2016-03-17 納米粒子

Country Status (7)

Country Link
US (2) US9206054B2 (zh)
EP (1) EP2994418B1 (zh)
JP (2) JP6138288B2 (zh)
KR (1) KR101716367B1 (zh)
CN (1) CN105164047B (zh)
HK (1) HK1215239A1 (zh)
WO (1) WO2014140889A2 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10453978B2 (en) 2015-03-12 2019-10-22 International Business Machines Corporation Single crystalline CZTSSe photovoltaic device
CN105226131B (zh) * 2015-08-24 2017-09-29 中国工程物理研究院材料研究所 一种铜锌锡硫吸收层薄膜的化学合成方法
US9935214B2 (en) 2015-10-12 2018-04-03 International Business Machines Corporation Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
CN106629820B (zh) * 2016-09-09 2019-05-24 武汉理工大学 Cu2ZnSnS4纳米晶材料的可控制备方法
AU2019320822A1 (en) * 2018-08-16 2021-03-04 Northwestern University Polyelemental heterostructure nanoparticles and methods of making the same
CN113044813B (zh) * 2019-12-26 2022-06-10 温州大学 一种铜锌锡硒纳米晶及其合成方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009137637A2 (en) * 2008-05-09 2009-11-12 Board Of Regents, The University Of Texas System Nanoparticles and methods of making and using
JP5649072B2 (ja) * 2009-02-27 2015-01-07 国立大学法人名古屋大学 半導体ナノ粒子及びその製法
US20120055554A1 (en) * 2009-05-21 2012-03-08 E.I. Du Pont De Nemours And Company Copper zinc tin chalcogenide nanoparticles
EP2435359A4 (en) * 2009-05-26 2016-04-20 Purdue Research Foundation SYNTHESIS OF SEVERAL DIFFERENT CHALCOGENIDE NANOPARTICLES WITH CU, ZN, SN, S AND SE
JP2013512311A (ja) * 2009-11-25 2013-04-11 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 結晶性銅カルコゲニドナノ粒子の水性製造方法、そのように製造されたナノ粒子、ならびにこれらのナノ粒子を組み込んだインクおよびコーテッド基板
JP2013512306A (ja) * 2009-11-25 2013-04-11 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ＣＺＴＳ／Ｓｅ前駆体インクとＣＺＴＳ／Ｓｅ薄フィルムおよびＣＺＴＳ／Ｓｅ系光電池の製造方法
CN101830445B (zh) * 2009-12-15 2014-12-10 河南大学 一种以乙酰丙酮盐为原料合成无机纳米晶的方法
KR101144738B1 (ko) * 2009-12-28 2012-05-24 재단법인대구경북과학기술원 박막형 태양전지의 제조방법
US20120067408A1 (en) * 2010-09-16 2012-03-22 Solexant Corp. Sintered CZTS Nanoparticle Solar Cells
CN103221471A (zh) * 2010-11-22 2013-07-24 E.I.内穆尔杜邦公司 半导体油墨、膜、涂层基板和制备方法
WO2012075267A1 (en) * 2010-12-03 2012-06-07 E. I. Du Pont De Nemours And Company Inks and processes for preparing copper indium gallium sulfide/selenide coatings and films
CN102108540B (zh) * 2010-12-27 2012-07-25 中国科学院长春光学精密机械与物理研究所 合成单分散多元化合物纳米晶的方法
JP2012250889A (ja) * 2011-06-06 2012-12-20 Toyota Motor Corp 半導体粒子及びその製造方法
WO2014136562A1 (ja) * 2013-03-07 2014-09-12 株式会社村田製作所 化合物半導体超微粒子、超微粒子薄膜及び光電変換デバイス

Also Published As

Publication number Publication date
WO2014140889A3 (en) 2015-01-08
KR20150126966A (ko) 2015-11-13
KR101716367B1 (ko) 2017-03-14
WO2014140889A2 (en) 2014-09-18
EP2994418B1 (en) 2021-02-17
JP6623192B2 (ja) 2019-12-18
JP6138288B2 (ja) 2017-05-31
JP2017206431A (ja) 2017-11-24
US9359222B2 (en) 2016-06-07
JP2016515990A (ja) 2016-06-02
US9206054B2 (en) 2015-12-08
CN105164047A (zh) 2015-12-16
EP2994418A2 (en) 2016-03-16
CN105164047B (zh) 2019-03-15
US20150376026A1 (en) 2015-12-31
US20140273337A1 (en) 2014-09-18

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Legal Events

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CHRG Changes in the register

Free format text: CORRECTION OF THE NAME OF THE INVENTOR FROM MASALA, OMBERETTA TO MASALA, OMBRETTA