SG11201509227PA - Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid - Google Patents

Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid

Info

Publication number
SG11201509227PA
SG11201509227PA SG11201509227PA SG11201509227PA SG11201509227PA SG 11201509227P A SG11201509227P A SG 11201509227PA SG 11201509227P A SG11201509227P A SG 11201509227PA SG 11201509227P A SG11201509227P A SG 11201509227PA SG 11201509227P A SG11201509227P A SG 11201509227PA
Authority
SG
Singapore
Prior art keywords
tetrakis
ethylenediamine
hydroxypropyl
chemical
mechanical polishing
Prior art date
Application number
SG11201509227PA
Other languages
English (en)
Inventor
Yongqing Lan
Peter Przybylski
Zhenyu Bao
Julian Prölss
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201509227PA publication Critical patent/SG11201509227PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201509227PA 2013-05-15 2014-05-06 Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid SG11201509227PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13167899 2013-05-15
PCT/IB2014/061236 WO2014184709A2 (en) 2013-05-15 2014-05-06 Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid

Publications (1)

Publication Number Publication Date
SG11201509227PA true SG11201509227PA (en) 2015-12-30

Family

ID=48366260

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201509227PA SG11201509227PA (en) 2013-05-15 2014-05-06 Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid

Country Status (9)

Country Link
US (2) US20160009955A1 (ru)
EP (1) EP2997103B1 (ru)
JP (1) JP2016524326A (ru)
KR (1) KR20160008597A (ru)
CN (1) CN105229098B (ru)
RU (1) RU2015153456A (ru)
SG (1) SG11201509227PA (ru)
TW (1) TW201500533A (ru)
WO (1) WO2014184709A2 (ru)

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TWI775722B (zh) 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 化學機械拋光（ｃｍｐ）組成物用於拋光含鈷及/或鈷合金之基材的用途
CN108701616B (zh) * 2016-02-16 2023-04-14 Cmc材料股份有限公司 抛光iii-v族材料的方法
US10759969B2 (en) 2016-03-25 2020-09-01 Fujimi Incorporated Polishing composition, polishing method, and method for manufacturing semiconductor substrate
CN110892033B (zh) 2017-06-23 2022-04-15 Ddp特种电子材料美国公司 高温环氧粘合剂配制品
KR20190106679A (ko) * 2018-03-07 2019-09-18 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP7501636B2 (ja) * 2020-07-17 2024-06-18 株式会社レゾナック 半導体材料用樹脂組成物

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KR20140059216A (ko) * 2011-08-01 2014-05-15 바스프 에스이 특정 유기 화합물을 포함하는 CMP 조성물의 존재하에서 원소 게르마늄 및/또는 Si₁­ｘGeｘ 재료의 화학적 기계적 연마를 포함하는 반도체 디바이스의 제조 방법
JP2013138053A (ja) * 2011-12-28 2013-07-11 Fujimi Inc 研磨用組成物
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JP2014198874A (ja) 2013-03-29 2014-10-23 株式会社神戸製鋼所 耐食性と磁気特性に優れた鋼材およびその製造方法

Also Published As

Publication number Publication date
US20170044402A1 (en) 2017-02-16
US20160009955A1 (en) 2016-01-14
JP2016524326A (ja) 2016-08-12
EP2997103A4 (en) 2016-11-02
EP2997103A2 (en) 2016-03-23
EP2997103B1 (en) 2019-03-06
WO2014184709A3 (en) 2015-03-12
RU2015153456A (ru) 2017-06-19
US9828527B2 (en) 2017-11-28
CN105229098B (zh) 2017-08-11
RU2015153456A3 (ru) 2018-03-28
TW201500533A (zh) 2015-01-01
CN105229098A (zh) 2016-01-06
WO2014184709A2 (en) 2014-11-20
KR20160008597A (ko) 2016-01-22

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