SG11201509227PA - Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid - Google Patents

Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid

Info

Publication number
SG11201509227PA
SG11201509227PA SG11201509227PA SG11201509227PA SG11201509227PA SG 11201509227P A SG11201509227P A SG 11201509227PA SG 11201509227P A SG11201509227P A SG 11201509227PA SG 11201509227P A SG11201509227P A SG 11201509227PA SG 11201509227P A SG11201509227P A SG 11201509227PA
Authority
SG
Singapore
Prior art keywords
tetrakis
ethylenediamine
hydroxypropyl
chemical
mechanical polishing
Prior art date
Application number
SG11201509227PA
Inventor
Yongqing Lan
Peter Przybylski
Zhenyu Bao
Julian Prölss
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201509227PA publication Critical patent/SG11201509227PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201509227PA 2013-05-15 2014-05-06 Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid SG11201509227PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13167899 2013-05-15
PCT/IB2014/061236 WO2014184709A2 (en) 2013-05-15 2014-05-06 Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid

Publications (1)

Publication Number Publication Date
SG11201509227PA true SG11201509227PA (en) 2015-12-30

Family

ID=48366260

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201509227PA SG11201509227PA (en) 2013-05-15 2014-05-06 Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid

Country Status (9)

Country Link
US (2) US20160009955A1 (en)
EP (1) EP2997103B1 (en)
JP (1) JP2016524326A (en)
KR (1) KR20160008597A (en)
CN (1) CN105229098B (en)
RU (1) RU2015153456A (en)
SG (1) SG11201509227PA (en)
TW (1) TW201500533A (en)
WO (1) WO2014184709A2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI775722B (en) 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and/or cobalt alloy comprising substrates
WO2017142885A1 (en) * 2016-02-16 2017-08-24 Cabot Microelectronics Corporation Method of polishing group iii-v materials
WO2017163847A1 (en) * 2016-03-25 2017-09-28 株式会社フジミインコーポレーテッド Polishing composition and polishing method, and method for manufacturing semiconductor substrate
WO2018236454A1 (en) 2017-06-23 2018-12-27 Dow Global Technologies Llc High temperature epoxy adhesive formulations
KR20190106679A (en) * 2018-03-07 2019-09-18 가부시키가이샤 후지미인코퍼레이티드 Polishing composition
JP7501636B2 (en) * 2020-07-17 2024-06-18 株式会社レゾナック Resin composition for semiconductor materials

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US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
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JP2006316167A (en) * 2005-05-12 2006-11-24 Adeka Corp Polishing composition for chemical mechanical polishing
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JP5416452B2 (en) 2009-03-30 2014-02-12 株式会社神戸製鋼所 Soft magnetic steel materials, soft magnetic steel parts, and manufacturing methods thereof
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DE102011078966A1 (en) * 2011-07-11 2013-01-17 Schülke & Mayr GmbH Process for the preparation of alcoholic gels for skin and hand disinfection
JP2014529183A (en) * 2011-08-01 2014-10-30 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ Method for manufacturing a semiconductor device comprising chemical mechanical polishing of elemental germanium and / or Si1-xGex material in the presence of a chemical mechanical polishing composition comprising certain organic compounds
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CN102585766A (en) * 2011-12-29 2012-07-18 湖州师范学院 Surface grinding composition for silicon signal crystal wafer
JP2014198874A (en) 2013-03-29 2014-10-23 株式会社神戸製鋼所 Steel material excellent in corrosion resistance and magnetic properties and method of producing the same

Also Published As

Publication number Publication date
US9828527B2 (en) 2017-11-28
US20160009955A1 (en) 2016-01-14
RU2015153456A3 (en) 2018-03-28
RU2015153456A (en) 2017-06-19
WO2014184709A2 (en) 2014-11-20
US20170044402A1 (en) 2017-02-16
EP2997103A4 (en) 2016-11-02
EP2997103A2 (en) 2016-03-23
KR20160008597A (en) 2016-01-22
CN105229098A (en) 2016-01-06
TW201500533A (en) 2015-01-01
JP2016524326A (en) 2016-08-12
WO2014184709A3 (en) 2015-03-12
CN105229098B (en) 2017-08-11
EP2997103B1 (en) 2019-03-06

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