SG11201506426TA - FePt-C-BASED SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME - Google Patents

FePt-C-BASED SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME

Info

Publication number
SG11201506426TA
SG11201506426TA SG11201506426TA SG11201506426TA SG11201506426TA SG 11201506426T A SG11201506426T A SG 11201506426TA SG 11201506426T A SG11201506426T A SG 11201506426TA SG 11201506426T A SG11201506426T A SG 11201506426TA SG 11201506426T A SG11201506426T A SG 11201506426TA
Authority
SG
Singapore
Prior art keywords
fept
sputtering target
manufacturing same
based sputtering
manufacturing
Prior art date
Application number
SG11201506426TA
Other languages
English (en)
Inventor
Yasuyuki Goto
Takamichi Yamamoto
Masahiro Nishiura
Ryousuke Kushibiki
Original Assignee
Tanaka Precious Metal Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=51428020&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG11201506426T(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tanaka Precious Metal Ind filed Critical Tanaka Precious Metal Ind
Publication of SG11201506426TA publication Critical patent/SG11201506426TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0084—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ carbon or graphite as the main non-metallic constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
SG11201506426TA 2013-03-01 2014-01-31 FePt-C-BASED SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME SG11201506426TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013041325 2013-03-01
JP2013041338 2013-03-02
PCT/JP2014/052341 WO2014132746A1 (ja) 2013-03-01 2014-01-31 ＦｅＰｔ－Ｃ系スパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201506426TA true SG11201506426TA (en) 2015-09-29

Family

ID=51428020

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201506426TA SG11201506426TA (en) 2013-03-01 2014-01-31 FePt-C-BASED SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME

Country Status (7)

Country Link
US (1) US10186404B2 (zh)
JP (1) JP5965539B2 (zh)
CN (1) CN105026610B (zh)
MY (1) MY172839A (zh)
SG (1) SG11201506426TA (zh)
TW (1) TWI507549B (zh)
WO (1) WO2014132746A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6422096B2 (ja) * 2014-03-14 2018-11-14 Ｊｘ金属株式会社 Ｃ粒子が分散したＦｅ−Ｐｔ系スパッタリングターゲット
WO2017141558A1 (ja) * 2016-02-19 2017-08-24 Ｊｘ金属株式会社 磁気記録媒体用スパッタリングターゲット及び磁性薄膜
JP6383510B2 (ja) 2016-03-07 2018-08-29 田中貴金属工業株式会社 ＦｅＰｔ−Ｃ系スパッタリングターゲット
MY183938A (en) * 2018-03-27 2021-03-17 Jx Nippon Mining & Metals Corp Sputtering target and method for producing same, and method for producing magnetic recording medium
JP6878349B2 (ja) * 2018-04-27 2021-05-26 田中貴金属工業株式会社 Ｃ含有スパッタリングターゲット及びその製造方法
WO2019220675A1 (ja) * 2018-05-14 2019-11-21 Ｊｘ金属株式会社 スパッタリングターゲット及びスパッタリングターゲットの製造方法
TWI702294B (zh) * 2018-07-31 2020-08-21 日商田中貴金屬工業股份有限公司 磁氣記錄媒體用濺鍍靶
JP7104001B2 (ja) * 2019-06-28 2022-07-20 田中貴金属工業株式会社 Ｆｅ－Ｐｔ－ＢＮ系スパッタリングターゲット及びその製造方法
WO2021010019A1 (ja) * 2019-07-12 2021-01-21 田中貴金属工業株式会社 Ｆｅ－Ｐｔ－ＢＮ系スパッタリングターゲット及びその製造方法
CN118076762A (zh) * 2021-11-05 2024-05-24 Ｊｘ金属株式会社 Fe－Pt－C系溅射靶部件、溅射靶组件、成膜方法、以及溅射靶部件的制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10140265A (ja) 1996-11-12 1998-05-26 Zexel Corp 耐摩耗性複合材料
JP2000282229A (ja) * 1999-03-29 2000-10-10 Hitachi Metals Ltd ＣｏＰｔ系スパッタリングターゲットおよびその製造方法ならびにこれを用いた磁気記録膜およびＣｏＰｔ系磁気記録媒体
US20070189916A1 (en) * 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
KR100470151B1 (ko) 2002-10-29 2005-02-05 한국과학기술원 ＦｅＰｔＣ 박막을 이용한 고밀도 자기기록매체 및 그제조방법
CN102333905B (zh) 2009-03-27 2013-09-04 吉坤日矿日石金属株式会社 非磁性材料粒子分散型强磁性材料溅射靶
JP5428995B2 (ja) 2010-03-28 2014-02-26 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
JP5590322B2 (ja) * 2010-11-12 2014-09-17 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
CN103228816B (zh) 2010-11-29 2015-09-30 三井金属矿业株式会社 溅射靶
WO2012086335A1 (ja) * 2010-12-20 2012-06-28 Jx日鉱日石金属株式会社 Ｃ粒子が分散したＦｅ－Ｐｔ系スパッタリングターゲット
JP5041261B2 (ja) 2011-01-31 2012-10-03 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
JP5041262B2 (ja) 2011-01-31 2012-10-03 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
US9683284B2 (en) 2011-03-30 2017-06-20 Jx Nippon Mining & Metals Corporation Sputtering target for magnetic recording film
JP5912559B2 (ja) 2011-03-30 2016-04-27 田中貴金属工業株式会社 ＦｅＰｔ−Ｃ系スパッタリングターゲットの製造方法
JP6037206B2 (ja) * 2011-07-05 2016-12-07 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
WO2013190943A1 (ja) * 2012-06-18 2013-12-27 Jx日鉱日石金属株式会社 磁気記録膜用スパッタリングターゲット
CN104221085B (zh) * 2012-07-20 2017-05-24 吉坤日矿日石金属株式会社 磁记录膜形成用溅射靶及其制造方法

Also Published As

Publication number Publication date
CN105026610B (zh) 2017-10-24
MY172839A (en) 2019-12-12
JP5965539B2 (ja) 2016-08-10
US20160013033A1 (en) 2016-01-14
JPWO2014132746A1 (ja) 2017-02-02
TWI507549B (zh) 2015-11-11
TW201500563A (zh) 2015-01-01
CN105026610A (zh) 2015-11-04
US10186404B2 (en) 2019-01-22
WO2014132746A1 (ja) 2014-09-04

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