SG11201404679VA - Integrated circuitry components, switches, and memory cells - Google Patents
Integrated circuitry components, switches, and memory cellsInfo
- Publication number
- SG11201404679VA SG11201404679VA SG11201404679VA SG11201404679VA SG11201404679VA SG 11201404679V A SG11201404679V A SG 11201404679VA SG 11201404679V A SG11201404679V A SG 11201404679VA SG 11201404679V A SG11201404679V A SG 11201404679VA SG 11201404679V A SG11201404679V A SG 11201404679VA
- Authority
- SG
- Singapore
- Prior art keywords
- switches
- memory cells
- integrated circuitry
- circuitry components
- components
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/400,518 US9368581B2 (en) | 2012-02-20 | 2012-02-20 | Integrated circuitry components, switches, and memory cells |
PCT/US2013/022738 WO2013126171A1 (en) | 2012-02-20 | 2013-01-23 | Integrated circuitry components, switches, and memory cells |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201404679VA true SG11201404679VA (en) | 2014-10-30 |
Family
ID=48981602
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201404679VA SG11201404679VA (en) | 2012-02-20 | 2013-01-23 | Integrated circuitry components, switches, and memory cells |
SG10201703651XA SG10201703651XA (en) | 2012-02-20 | 2013-01-23 | Integrated circuitry components, switches, and memory cells |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201703651XA SG10201703651XA (en) | 2012-02-20 | 2013-01-23 | Integrated circuitry components, switches, and memory cells |
Country Status (8)
Country | Link |
---|---|
US (2) | US9368581B2 (ja) |
EP (2) | EP2817825B1 (ja) |
JP (1) | JP5845364B2 (ja) |
KR (1) | KR101679490B1 (ja) |
CN (1) | CN104126227B (ja) |
SG (2) | SG11201404679VA (ja) |
TW (1) | TWI512965B (ja) |
WO (1) | WO2013126171A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9368581B2 (en) | 2012-02-20 | 2016-06-14 | Micron Technology, Inc. | Integrated circuitry components, switches, and memory cells |
US9337210B2 (en) | 2013-08-12 | 2016-05-10 | Micron Technology, Inc. | Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors |
US9263577B2 (en) | 2014-04-24 | 2016-02-16 | Micron Technology, Inc. | Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors |
US9472560B2 (en) * | 2014-06-16 | 2016-10-18 | Micron Technology, Inc. | Memory cell and an array of memory cells |
US9159829B1 (en) | 2014-10-07 | 2015-10-13 | Micron Technology, Inc. | Recessed transistors containing ferroelectric material |
US9305929B1 (en) | 2015-02-17 | 2016-04-05 | Micron Technology, Inc. | Memory cells |
US10134982B2 (en) | 2015-07-24 | 2018-11-20 | Micron Technology, Inc. | Array of cross point memory cells |
US9853211B2 (en) | 2015-07-24 | 2017-12-26 | Micron Technology, Inc. | Array of cross point memory cells individually comprising a select device and a programmable device |
KR101924687B1 (ko) | 2016-06-30 | 2018-12-04 | 연세대학교 산학협력단 | 반도체 소자 및 이의 제조 방법 |
US9858975B1 (en) | 2016-08-24 | 2018-01-02 | Samsung Electronics Co., Ltd. | Zero transistor transverse current bi-directional bitcell |
US10396145B2 (en) | 2017-01-12 | 2019-08-27 | Micron Technology, Inc. | Memory cells comprising ferroelectric material and including current leakage paths having different total resistances |
US10790002B2 (en) | 2018-06-21 | 2020-09-29 | Samsung Electronics Co., Ltd. | Giant spin hall-based compact neuromorphic cell optimized for differential read inference |
US11908901B1 (en) * | 2019-03-14 | 2024-02-20 | Regents Of The University Of Minnesota | Graphene varactor including ferroelectric material |
US11170834B2 (en) | 2019-07-10 | 2021-11-09 | Micron Technology, Inc. | Memory cells and methods of forming a capacitor including current leakage paths having different total resistances |
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JP3805001B2 (ja) * | 1995-06-08 | 2006-08-02 | 株式会社ルネサステクノロジ | 半導体装置 |
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JP2001102465A (ja) | 1999-09-30 | 2001-04-13 | Rohm Co Ltd | 不揮発性メモリ |
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JP4071601B2 (ja) | 2002-11-11 | 2008-04-02 | 富士通株式会社 | 半導体装置 |
KR100590568B1 (ko) * | 2004-11-09 | 2006-06-19 | 삼성전자주식회사 | 멀티 비트 플래시 메모리 소자 및 동작 방법 |
US7504302B2 (en) | 2005-03-18 | 2009-03-17 | Freescale Semiconductor, Inc. | Process of forming a non-volatile memory cell including a capacitor structure |
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US8394682B2 (en) | 2011-07-26 | 2013-03-12 | Micron Technology, Inc. | Methods of forming graphene-containing switches |
US9368581B2 (en) | 2012-02-20 | 2016-06-14 | Micron Technology, Inc. | Integrated circuitry components, switches, and memory cells |
-
2012
- 2012-02-20 US US13/400,518 patent/US9368581B2/en active Active
-
2013
- 2013-01-23 EP EP13752181.1A patent/EP2817825B1/en active Active
- 2013-01-23 SG SG11201404679VA patent/SG11201404679VA/en unknown
- 2013-01-23 SG SG10201703651XA patent/SG10201703651XA/en unknown
- 2013-01-23 EP EP21205614.7A patent/EP3971977A1/en active Pending
- 2013-01-23 CN CN201380010225.9A patent/CN104126227B/zh active Active
- 2013-01-23 JP JP2014557663A patent/JP5845364B2/ja active Active
- 2013-01-23 KR KR1020147024898A patent/KR101679490B1/ko active IP Right Grant
- 2013-01-23 WO PCT/US2013/022738 patent/WO2013126171A1/en active Application Filing
- 2013-02-19 TW TW102105760A patent/TWI512965B/zh active
-
2016
- 2016-05-16 US US15/155,289 patent/US9704879B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9704879B2 (en) | 2017-07-11 |
WO2013126171A1 (en) | 2013-08-29 |
EP2817825A1 (en) | 2014-12-31 |
US20160260723A1 (en) | 2016-09-08 |
CN104126227B (zh) | 2016-09-28 |
KR20140132723A (ko) | 2014-11-18 |
TW201344895A (zh) | 2013-11-01 |
WO2013126171A9 (en) | 2014-12-04 |
US9368581B2 (en) | 2016-06-14 |
JP5845364B2 (ja) | 2016-01-20 |
JP2015507376A (ja) | 2015-03-05 |
SG10201703651XA (en) | 2017-06-29 |
TWI512965B (zh) | 2015-12-11 |
KR101679490B1 (ko) | 2016-11-24 |
EP3971977A1 (en) | 2022-03-23 |
US20130214242A1 (en) | 2013-08-22 |
EP2817825A4 (en) | 2015-11-25 |
CN104126227A (zh) | 2014-10-29 |
EP2817825B1 (en) | 2021-11-10 |
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