SG10201703651XA - Integrated circuitry components, switches, and memory cells - Google Patents

Integrated circuitry components, switches, and memory cells

Info

Publication number
SG10201703651XA
SG10201703651XA SG10201703651XA SG10201703651XA SG10201703651XA SG 10201703651X A SG10201703651X A SG 10201703651XA SG 10201703651X A SG10201703651X A SG 10201703651XA SG 10201703651X A SG10201703651X A SG 10201703651XA SG 10201703651X A SG10201703651X A SG 10201703651XA
Authority
SG
Singapore
Prior art keywords
switches
memory cells
integrated circuitry
circuitry components
components
Prior art date
Application number
SG10201703651XA
Inventor
Gurtej S Sandhu
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG10201703651XA publication Critical patent/SG10201703651XA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7788—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
SG10201703651XA 2012-02-20 2013-01-23 Integrated circuitry components, switches, and memory cells SG10201703651XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/400,518 US9368581B2 (en) 2012-02-20 2012-02-20 Integrated circuitry components, switches, and memory cells

Publications (1)

Publication Number Publication Date
SG10201703651XA true SG10201703651XA (en) 2017-06-29

Family

ID=48981602

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201703651XA SG10201703651XA (en) 2012-02-20 2013-01-23 Integrated circuitry components, switches, and memory cells
SG11201404679VA SG11201404679VA (en) 2012-02-20 2013-01-23 Integrated circuitry components, switches, and memory cells

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201404679VA SG11201404679VA (en) 2012-02-20 2013-01-23 Integrated circuitry components, switches, and memory cells

Country Status (8)

Country Link
US (2) US9368581B2 (en)
EP (2) EP3971977A1 (en)
JP (1) JP5845364B2 (en)
KR (1) KR101679490B1 (en)
CN (1) CN104126227B (en)
SG (2) SG10201703651XA (en)
TW (1) TWI512965B (en)
WO (1) WO2013126171A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9368581B2 (en) 2012-02-20 2016-06-14 Micron Technology, Inc. Integrated circuitry components, switches, and memory cells
US9337210B2 (en) 2013-08-12 2016-05-10 Micron Technology, Inc. Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors
US9263577B2 (en) 2014-04-24 2016-02-16 Micron Technology, Inc. Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors
US9472560B2 (en) * 2014-06-16 2016-10-18 Micron Technology, Inc. Memory cell and an array of memory cells
US9159829B1 (en) 2014-10-07 2015-10-13 Micron Technology, Inc. Recessed transistors containing ferroelectric material
US9305929B1 (en) 2015-02-17 2016-04-05 Micron Technology, Inc. Memory cells
US10134982B2 (en) 2015-07-24 2018-11-20 Micron Technology, Inc. Array of cross point memory cells
US9853211B2 (en) 2015-07-24 2017-12-26 Micron Technology, Inc. Array of cross point memory cells individually comprising a select device and a programmable device
KR101924687B1 (en) 2016-06-30 2018-12-04 연세대학교 산학협력단 A semiconductor device and a method of fabricating the same
US9858975B1 (en) 2016-08-24 2018-01-02 Samsung Electronics Co., Ltd. Zero transistor transverse current bi-directional bitcell
US10396145B2 (en) 2017-01-12 2019-08-27 Micron Technology, Inc. Memory cells comprising ferroelectric material and including current leakage paths having different total resistances
US10790002B2 (en) 2018-06-21 2020-09-29 Samsung Electronics Co., Ltd. Giant spin hall-based compact neuromorphic cell optimized for differential read inference
US11908901B1 (en) * 2019-03-14 2024-02-20 Regents Of The University Of Minnesota Graphene varactor including ferroelectric material
US11170834B2 (en) 2019-07-10 2021-11-09 Micron Technology, Inc. Memory cells and methods of forming a capacitor including current leakage paths having different total resistances

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3805001B2 (en) * 1995-06-08 2006-08-02 株式会社ルネサステクノロジ Semiconductor device
US5877977A (en) 1996-09-10 1999-03-02 National Semiconductor Corporation Nonvolatile memory based on metal-ferroelectric-metal-insulator semiconductor structure
JP2001102465A (en) 1999-09-30 2001-04-13 Rohm Co Ltd Non-volatile memory
DE10250829B4 (en) 2002-10-31 2006-11-02 Infineon Technologies Ag Nonvolatile memory cell, memory cell array, and method of making a nonvolatile memory cell
JP4071601B2 (en) 2002-11-11 2008-04-02 富士通株式会社 Semiconductor device
KR100590568B1 (en) * 2004-11-09 2006-06-19 삼성전자주식회사 Multi-bit flash memory device and method of operating the same
US7504302B2 (en) 2005-03-18 2009-03-17 Freescale Semiconductor, Inc. Process of forming a non-volatile memory cell including a capacitor structure
JP4766895B2 (en) 2005-03-28 2011-09-07 トヨタ自動車株式会社 Carbon nanowall device
US7947247B2 (en) 2005-03-29 2011-05-24 Hyperion Catalysis International, Inc. Method for preparing single walled carbon nanotubes from a metal layer
JP4203506B2 (en) 2006-01-13 2009-01-07 シャープ株式会社 Nonvolatile semiconductor memory device and rewriting method thereof
US7982252B2 (en) * 2006-01-27 2011-07-19 Hynix Semiconductor Inc. Dual-gate non-volatile ferroelectric memory
US7619257B2 (en) 2006-02-16 2009-11-17 Alcatel-Lucent Usa Inc. Devices including graphene layers epitaxially grown on single crystal substrates
US7951351B2 (en) 2006-03-29 2011-05-31 Hyperion Catalysis International, Inc. Method for preparing uniform single walled carbon nanotubes
US8168964B2 (en) 2007-03-02 2012-05-01 Nec Corporation Semiconductor device using graphene and method of manufacturing the same
US7772059B2 (en) 2008-01-16 2010-08-10 Texas Instruments Incorporated Method for fabricating graphene transistors on a silicon or SOI substrate
US20110089404A1 (en) 2008-04-24 2011-04-21 President And Fellows Of Harvard College Microfabrication of Carbon-based Devices Such as Gate-Controlled Graphene Devices
US8547725B2 (en) 2008-06-27 2013-10-01 Sandisk 3D Llc Method of programming a nonvolatile memory cell by reverse biasing a diode steering element to set a storage element
US7687308B2 (en) 2008-08-15 2010-03-30 Texas Instruments Incorporated Method for fabricating carbon nanotube transistors on a silicon or SOI substrate
US20110170330A1 (en) 2008-09-23 2011-07-14 National University Of Singapore Graphene Memory Cell and Fabrication Methods Thereof
US8188460B2 (en) * 2008-11-26 2012-05-29 Board Of Regents, The University Of Texas System Bi-layer pseudo-spin field-effect transistor
KR101527192B1 (en) * 2008-12-10 2015-06-10 삼성전자주식회사 Non-volatile memory device and method for fabricating the same
US8023310B2 (en) 2009-01-14 2011-09-20 Sandisk 3D Llc Nonvolatile memory cell including carbon storage element formed on a silicide layer
KR20100087915A (en) 2009-01-29 2010-08-06 삼성전자주식회사 Semiconductor memory device with cylinder type storage node and method of fabricating the same
US8841650B2 (en) 2009-02-23 2014-09-23 Cornell University Electronic-structure modulation transistor
JP5356066B2 (en) 2009-02-24 2013-12-04 株式会社東芝 Switching element and nonvolatile memory device
US8395191B2 (en) * 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
US20110006837A1 (en) 2009-06-02 2011-01-13 Feng Wang Graphene Device, Method of Investigating Graphene, and Method of Operating Graphene Device
KR101095792B1 (en) 2009-07-03 2011-12-21 주식회사 하이닉스반도체 Manufacturing method of capacitor in semiconductor
KR101119916B1 (en) 2009-08-24 2012-03-13 삼성전자주식회사 Electronic device utilizing graphene electrodes and organic/inorganic hybrid composites and method for manufacturing the same
US8227842B2 (en) * 2009-09-21 2012-07-24 Hitachi Global Storage Technologies Netherlands B.V. Quantum well graphene structure
US8470670B2 (en) 2009-09-23 2013-06-25 Infineon Technologies Ag Method for making semiconductor device
US8497499B2 (en) 2009-10-12 2013-07-30 Georgia Tech Research Corporation Method to modify the conductivity of graphene
WO2011052179A1 (en) * 2009-10-29 2011-05-05 パナソニック株式会社 Method for driving semiconductor storage device
US8614435B2 (en) 2009-11-03 2013-12-24 International Business Machines Corporation Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices
US8105928B2 (en) * 2009-11-04 2012-01-31 International Business Machines Corporation Graphene based switching device having a tunable bandgap
JP2011142136A (en) 2010-01-05 2011-07-21 Fujitsu Ltd Field effect transistor and logical circuit using the same
US8389375B2 (en) 2010-02-11 2013-03-05 Sandisk 3D Llc Memory cell formed using a recess and methods for forming the same
US8294132B2 (en) 2010-03-30 2012-10-23 Hewlett-Packard Development Company, L.P. Graphene memristor having modulated graphene interlayer conduction
US8236626B2 (en) 2010-04-15 2012-08-07 The Board Of Trustees Of The Leland Stanford Junior University Narrow graphene nanoribbons from carbon nanotubes
US8445320B2 (en) 2010-05-20 2013-05-21 International Business Machines Corporation Graphene channel-based devices and methods for fabrication thereof
US8742541B2 (en) * 2010-12-09 2014-06-03 Tessera, Inc. High density three-dimensional integrated capacitors
US8878120B2 (en) 2010-12-13 2014-11-04 The Trustees Of The Stevens Institute Of Technology Active bandgap tuning of graphene for tunable photodetection applications
US8685802B2 (en) * 2010-12-29 2014-04-01 Universityof North Texas Graphene formation on dielectrics and electronic devices formed therefrom
KR101791938B1 (en) * 2010-12-29 2017-11-02 삼성전자 주식회사 Graphene electronic device comprising a plurality of graphene channel layers
US8406037B2 (en) * 2011-01-05 2013-03-26 Nokia Corporation Apparatus and a method
US9076873B2 (en) * 2011-01-07 2015-07-07 International Business Machines Corporation Graphene devices with local dual gates
KR101878006B1 (en) * 2011-01-24 2018-07-12 아이엠이씨 브이제트더블유 Vertical memory device and method for making thereof
US8456947B2 (en) 2011-03-08 2013-06-04 Micron Technology, Inc. Integrated circuitry, switches, and methods of selecting memory cells of a memory device
US8394682B2 (en) 2011-07-26 2013-03-12 Micron Technology, Inc. Methods of forming graphene-containing switches
US9368581B2 (en) 2012-02-20 2016-06-14 Micron Technology, Inc. Integrated circuitry components, switches, and memory cells

Also Published As

Publication number Publication date
TW201344895A (en) 2013-11-01
JP2015507376A (en) 2015-03-05
KR20140132723A (en) 2014-11-18
EP2817825A1 (en) 2014-12-31
SG11201404679VA (en) 2014-10-30
US9704879B2 (en) 2017-07-11
CN104126227B (en) 2016-09-28
US20130214242A1 (en) 2013-08-22
EP2817825A4 (en) 2015-11-25
JP5845364B2 (en) 2016-01-20
KR101679490B1 (en) 2016-11-24
CN104126227A (en) 2014-10-29
WO2013126171A9 (en) 2014-12-04
TWI512965B (en) 2015-12-11
WO2013126171A1 (en) 2013-08-29
US9368581B2 (en) 2016-06-14
US20160260723A1 (en) 2016-09-08
EP3971977A1 (en) 2022-03-23
EP2817825B1 (en) 2021-11-10

Similar Documents

Publication Publication Date Title
SG10201703651XA (en) Integrated circuitry components, switches, and memory cells
HK1213016A1 (en) Cell modifying compounds and uses thereof
GB2562626B (en) Integrated circuit structure
EP2923378A4 (en) Transistors, memory cells and semiconductor constructions
IL235915A0 (en) Integrated power plant and data center
EP2869363A4 (en) Separator, and electrochemical device comprising same
EP2828859A4 (en) Multi-function resistance change memory cells and apparatuses including the same
HUE049541T2 (en) Small cell activation procedure
IL237068A (en) 1,3-dioxanomorphides and 1,3-dioxanocodides
EP2911216A4 (en) Cell module
HK1210949A1 (en) Combinations and uses thereof
EP2911230A4 (en) Cell
EP2940759A4 (en) Protective circuit module, and battery module comprising same
EP2831949A4 (en) Sodium-oxygen cells
EP2907282A4 (en) Initialization and tracking for low power link states
IL236904A0 (en) Electrochemical systems featuring high open circuit potential
EP2840575A4 (en) Memory circuit
EP2847795A4 (en) Permutational memory cells
EP2884576A4 (en) Cell module
EP2893746A4 (en) Local cell discovery in macro-assisted enhanced local area
GB2517634B (en) Connection arrangements, pivots and mechanisms
EP2768048A4 (en) Alkaline cell
PL2888914T3 (en) Integrated paging technique
GB201218550D0 (en) Logic circuit
EP2810176A4 (en) Single and double chip spare