SG111237A1 - Use of a top layer on a mirror for use in a lithographic apparatus, mirror for use in a lithographic apparatus, lithographic apparatus comprising such a mirror and device manufacturing method - Google Patents

Use of a top layer on a mirror for use in a lithographic apparatus, mirror for use in a lithographic apparatus, lithographic apparatus comprising such a mirror and device manufacturing method

Info

Publication number
SG111237A1
SG111237A1 SG200406153A SG200406153A SG111237A1 SG 111237 A1 SG111237 A1 SG 111237A1 SG 200406153 A SG200406153 A SG 200406153A SG 200406153 A SG200406153 A SG 200406153A SG 111237 A1 SG111237 A1 SG 111237A1
Authority
SG
Singapore
Prior art keywords
mirror
lithographic apparatus
top layer
device manufacturing
source
Prior art date
Application number
SG200406153A
Other languages
English (en)
Inventor
Levinus Pieter Bakker
Frank Jeroen Pieter Schuurmans
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG111237A1 publication Critical patent/SG111237A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
SG200406153A 2003-10-20 2004-10-19 Use of a top layer on a mirror for use in a lithographic apparatus, mirror for use in a lithographic apparatus, lithographic apparatus comprising such a mirror and device manufacturing method SG111237A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03078316A EP1526550A1 (fr) 2003-10-20 2003-10-20 Mirroir pour un appareil lithographique, appareil lithographique le comprenant et methode de fabrication d'un composant

Publications (1)

Publication Number Publication Date
SG111237A1 true SG111237A1 (en) 2005-05-30

Family

ID=34384643

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200406153A SG111237A1 (en) 2003-10-20 2004-10-19 Use of a top layer on a mirror for use in a lithographic apparatus, mirror for use in a lithographic apparatus, lithographic apparatus comprising such a mirror and device manufacturing method

Country Status (7)

Country Link
US (1) US7592610B2 (fr)
EP (2) EP1624467A3 (fr)
JP (2) JP2005129936A (fr)
KR (1) KR100794278B1 (fr)
CN (1) CN1609715A (fr)
SG (1) SG111237A1 (fr)
TW (1) TW200527128A (fr)

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US7145641B2 (en) 2003-12-31 2006-12-05 Asml Netherlands, B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US7233010B2 (en) * 2005-05-20 2007-06-19 Asml Netherlands B.V. Radiation system and lithographic apparatus
US7372058B2 (en) * 2005-09-27 2008-05-13 Asml Netherlands B.V. Ex-situ removal of deposition on an optical element
WO2007051537A2 (fr) * 2005-11-02 2007-05-10 University College Dublin, National University Of Ireland, Dublin Systeme de lampe uv extreme haute puissance
US7372049B2 (en) * 2005-12-02 2008-05-13 Asml Netherlands B.V. Lithographic apparatus including a cleaning device and method for cleaning an optical element
US7462850B2 (en) * 2005-12-08 2008-12-09 Asml Netherlands B.V. Radical cleaning arrangement for a lithographic apparatus
US7468521B2 (en) * 2005-12-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7541603B2 (en) 2006-09-27 2009-06-02 Asml Netherlands B.V. Radiation system and lithographic apparatus comprising the same
EP2076801A1 (fr) * 2006-10-13 2009-07-08 Media Lario S.r.L. Miroirs revêtus et leur fabrication
US7696492B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
US7772570B2 (en) 2006-12-22 2010-08-10 Asml Netherlands B.V. Assembly for blocking a beam of radiation and method of blocking a beam of radiation
US7737418B2 (en) * 2006-12-27 2010-06-15 Asml Netherlands B.V. Debris mitigation system and lithographic apparatus
US20080218709A1 (en) * 2007-03-07 2008-09-11 Asml Netherlands B.V. Removal of deposition on an element of a lithographic apparatus
JP5099793B2 (ja) 2007-11-06 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学面から汚染層を除去するための方法、洗浄ガスを生成するための方法、ならびに対応する洗浄および洗浄ガス生成の構造
ATE528694T1 (de) * 2008-07-18 2011-10-15 Koninkl Philips Electronics Nv Vorrichtung zur erzeugung von extremer uv- strahlung mit einem kontaminationsfänger und verfahren zur reinigung von zinn in einer solchen vorrichtung
EP2157481A3 (fr) * 2008-08-14 2012-06-13 ASML Netherlands B.V. Source de rayonnement, appareil de lithographie et procédé de fabrication de dispositifs
EP2161725B1 (fr) 2008-09-04 2015-07-08 ASML Netherlands B.V. Source de rayons et procédé correspondant
JP5534910B2 (ja) * 2009-04-23 2014-07-02 ギガフォトン株式会社 極端紫外光源装置
US8587768B2 (en) 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection
KR102002269B1 (ko) * 2010-07-30 2019-07-19 칼 짜이스 에스엠티 게엠베하 Euv 노광 장치
CN102621815B (zh) 2011-01-26 2016-12-21 Asml荷兰有限公司 用于光刻设备的反射光学部件及器件制造方法
CA2835073A1 (fr) * 2011-05-04 2012-11-08 The University Of Akron Suppression de demouillage de films polymeres par lithographie molle peu couteuse
NL2009359A (en) * 2011-09-23 2013-03-26 Asml Netherlands Bv Radiation source.
DE102013002064A1 (de) 2012-02-11 2013-08-14 Media Lario S.R.L. Quell-kollektor-module für euv-lithographie unter verwendung eines gic-spiegels und einer lpp-quelle
US9753383B2 (en) 2012-06-22 2017-09-05 Asml Netherlands B.V. Radiation source and lithographic apparatus
US9846365B2 (en) 2013-08-02 2017-12-19 Asml Netherlands B.V. Component for a radiation source, associated radiation source and lithographic apparatus
DE102014216240A1 (de) * 2014-08-15 2016-02-18 Carl Zeiss Smt Gmbh Reflektives optisches Element
JP6869242B2 (ja) * 2015-11-19 2021-05-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置のためのｅｕｖソースチャンバーおよびガス流れ様式、多層ミラー、およびリソグラフィ装置
DE102015225509A1 (de) * 2015-12-16 2017-06-22 Carl Zeiss Smt Gmbh Reflektives optisches Element

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Also Published As

Publication number Publication date
EP1526550A1 (fr) 2005-04-27
EP1624467A3 (fr) 2007-05-30
JP2005129936A (ja) 2005-05-19
KR100794278B1 (ko) 2008-01-11
EP1624467A2 (fr) 2006-02-08
JP2009055064A (ja) 2009-03-12
KR20050037962A (ko) 2005-04-25
US7592610B2 (en) 2009-09-22
JP4805997B2 (ja) 2011-11-02
TW200527128A (en) 2005-08-16
CN1609715A (zh) 2005-04-27
US20050111080A1 (en) 2005-05-26

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