SG108827A1 - Embedded dram on silicon-on-insulator substrate - Google Patents

Embedded dram on silicon-on-insulator substrate

Info

Publication number
SG108827A1
SG108827A1 SG200106036A SG200106036A SG108827A1 SG 108827 A1 SG108827 A1 SG 108827A1 SG 200106036 A SG200106036 A SG 200106036A SG 200106036 A SG200106036 A SG 200106036A SG 108827 A1 SG108827 A1 SG 108827A1
Authority
SG
Singapore
Prior art keywords
silicon
insulator substrate
embedded dram
dram
embedded
Prior art date
Application number
SG200106036A
Other languages
English (en)
Inventor
W Adkisson James
Divakaruni Ramachandra
Peter Gambino Jeffrey
Allan Mandelman Jack
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG108827A1 publication Critical patent/SG108827A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
SG200106036A 2000-10-12 2001-10-01 Embedded dram on silicon-on-insulator substrate SG108827A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/689,096 US6350653B1 (en) 2000-10-12 2000-10-12 Embedded DRAM on silicon-on-insulator substrate

Publications (1)

Publication Number Publication Date
SG108827A1 true SG108827A1 (en) 2005-02-28

Family

ID=24767022

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200106036A SG108827A1 (en) 2000-10-12 2001-10-01 Embedded dram on silicon-on-insulator substrate

Country Status (7)

Country Link
US (2) US6350653B1 (zh)
EP (1) EP1199745B1 (zh)
JP (1) JP4074451B2 (zh)
KR (1) KR100458772B1 (zh)
CN (1) CN1173404C (zh)
SG (1) SG108827A1 (zh)
TW (1) TW538535B (zh)

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TW538535B (en) 2003-06-21
EP1199745B1 (en) 2013-08-07
JP2002134631A (ja) 2002-05-10
US6350653B1 (en) 2002-02-26
EP1199745A3 (en) 2007-02-21
CN1173404C (zh) 2004-10-27
JP4074451B2 (ja) 2008-04-09
US20020064913A1 (en) 2002-05-30
US6590259B2 (en) 2003-07-08
KR20020029300A (ko) 2002-04-18
CN1348217A (zh) 2002-05-08
KR100458772B1 (ko) 2004-12-03
EP1199745A2 (en) 2002-04-24

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