SG10202105785RA - N-h free and si-rich perhydropolysilazane compositions, their synthesis, and applications - Google Patents

N-h free and si-rich perhydropolysilazane compositions, their synthesis, and applications

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Publication number
SG10202105785RA
SG10202105785RA SG10202105785RA SG10202105785RA SG10202105785RA SG 10202105785R A SG10202105785R A SG 10202105785RA SG 10202105785R A SG10202105785R A SG 10202105785RA SG 10202105785R A SG10202105785R A SG 10202105785RA SG 10202105785R A SG10202105785R A SG 10202105785RA
Authority
SG
Singapore
Prior art keywords
synthesis
applications
free
rich perhydropolysilazane
compositions
Prior art date
Application number
SG10202105785RA
Other languages
English (en)
Inventor
Antonio Sanchez
Gennadiy Itov
Manish Khandelwal
Cole Ritter
Peng Zhang
Jean-Marc Girard
Zhiwen Wan
Glenn Kuchenbeiser
David Orban
Sean Kerrigan
Reno Pesaresi
Matthew Damien Stephens
Yang Wang
Guillaume Husson
Original Assignee
Air Liquide
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide filed Critical Air Liquide
Publication of SG10202105785RA publication Critical patent/SG10202105785RA/en

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    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/087—Compounds containing nitrogen and non-metals and optionally metals containing one or more hydrogen atoms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H

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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201703196WA (en) * 2014-10-24 2017-05-30 Versum Materials Us Llc Compositions and methods using same for deposition of silicon-containing films
US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US11111256B2 (en) * 2015-12-18 2021-09-07 Jiangsu Nata Opto-Electronic Materials Co. Ltd. High purity trisilylamine, methods of making, and use
CN108025528B (zh) * 2016-03-31 2020-11-27 株式会社Lg化学 用于制备阻挡膜的方法
JP7033667B2 (ja) 2018-02-21 2022-03-10 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ペルヒドロポリシラザン組成物及びそれを使用する酸化物膜の形成方法
TWI793262B (zh) * 2018-02-21 2023-02-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 全氫聚矽氮烷組成物和用於使用其形成氮化物膜之方法
US11450526B2 (en) 2018-05-30 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Cyclic spin-on coating process for forming dielectric material
CN109470793A (zh) * 2018-12-21 2019-03-15 中国兵器工业第五九研究所 电子元器件灌封胶贮存环境损伤机理分析方法
TW202225282A (zh) * 2020-10-02 2022-07-01 德商默克專利有限公司 聚矽氮烷、包含其之矽質膜形成組成物及使用其製造矽質膜的方法
US20250011924A1 (en) * 2021-11-15 2025-01-09 Versum Materials Us, Llc Multilayered silicon nitride film
CN118239694B (zh) * 2022-12-22 2025-04-29 江苏菲沃泰纳米科技股份有限公司 一种亲水涂层、制备方法及器件
WO2024240866A1 (en) * 2023-05-25 2024-11-28 Merck Patent Gmbh Method for manufacturing silicon containing conformal cured film
CN116854920A (zh) * 2023-08-16 2023-10-10 库贝化学（上海）有限公司 全氢聚硅氮烷树脂及其制备方法
KR102907433B1 (ko) * 2023-09-27 2026-01-06 (주)세경하이테크 반사 방지용 코팅 조성물 및 이의 제조방법
CN119661856A (zh) * 2025-02-21 2025-03-21 库贝化学（上海）有限公司 甲酰氧基聚硅氮烷、其制备方法及应用

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3137599A (en) 1960-10-25 1964-06-16 Dow Corning Polysilane rocket propellants
DE2231008A1 (de) 1972-06-24 1974-01-17 Messerschmitt Boelkow Blohm Raketenbrennstoff
US4200666A (en) 1978-08-02 1980-04-29 Texas Instruments Incorporated Single component monomer for silicon nitride deposition
US4395460A (en) 1981-09-21 1983-07-26 Dow Corning Corporation Preparation of polysilazane polymers and the polymers therefrom
US4412874A (en) 1981-11-19 1983-11-01 The United States Of America As Represented By The Secretary Of The Army Silane ballistic modifier containing propellant
US4482669A (en) 1984-01-19 1984-11-13 Massachusetts Institute Of Technology Preceramic organosilazane polymers
US4746480A (en) 1986-08-11 1988-05-24 Hoechst Celanese Corporation Process for providing a protective oxide coating on ceramic fibers
JP2613787B2 (ja) * 1987-08-13 1997-05-28 財団法人石油産業活性化センター 無機シラザン高重合体、その製造方法及びその用途
US4975512A (en) 1987-08-13 1990-12-04 Petroleum Energy Center Reformed polysilazane and method of producing same
US4933160A (en) * 1987-08-13 1990-06-12 Petroleum Energy Center Reformed, inorganic polysilazane
EP0331424B1 (en) 1988-02-29 1996-04-17 Toa Nenryo Kogyo Kabushiki Kaisha Molded articles formed of silicon nitride based ceramic and process for producing same
US5208284A (en) 1989-12-05 1993-05-04 Ethyl Corporation Coating composition
US5262553A (en) 1993-01-08 1993-11-16 Dow Corning Corporation Method of crosslinking polysilazane polymers
JP4637303B2 (ja) 1995-12-28 2011-02-23 Ａｚエレクトロニックマテリアルズ株式会社 ポリシラザンの製造方法
US6329487B1 (en) 1999-11-12 2001-12-11 Kion Corporation Silazane and/or polysilazane compounds and methods of making
JP5020425B2 (ja) 2000-04-25 2012-09-05 Ａｚエレクトロニックマテリアルズ株式会社 微細溝をシリカ質材料で埋封する方法
US7053005B2 (en) 2000-05-02 2006-05-30 Samsung Electronics Co., Ltd. Method of forming a silicon oxide layer in a semiconductor manufacturing process
KR100362834B1 (ko) 2000-05-02 2002-11-29 삼성전자 주식회사 반도체 장치의 산화막 형성 방법 및 이에 의하여 제조된 반도체 장치
US6479405B2 (en) 2000-10-12 2002-11-12 Samsung Electronics Co., Ltd. Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method
US7270886B2 (en) 2000-10-12 2007-09-18 Samsung Electronics Co., Ltd. Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same
PL374997A1 (en) 2002-11-01 2005-11-14 Clariant International Ltd Polysilazane-containing coating solution
US7015114B2 (en) 2002-12-20 2006-03-21 Dongbuanam Semiconductor Inc. Trench in semiconductor device and formation method thereof
KR100503527B1 (ko) * 2003-02-12 2005-07-26 삼성전자주식회사 퍼하이드로 폴리실라잔을 포함하는 반도체 소자 제조용조성물 및 이를 이용한 반도체 소자의 제조방법
DE102004011212A1 (de) 2004-03-04 2005-09-29 Clariant International Limited Perhydropolysilazane enthaltende Beschichtungen für Metall- und Polymeroberflächen
US8163261B2 (en) 2005-04-05 2012-04-24 Voltaix, Llc System and method for making Si2H6 and higher silanes
US8232176B2 (en) 2006-06-22 2012-07-31 Applied Materials, Inc. Dielectric deposition and etch back processes for bottom up gapfill
JP2008305974A (ja) 2007-06-07 2008-12-18 Elpida Memory Inc 酸化膜形成用塗布組成物およびそれを用いた半導体装置の製造方法
US9034105B2 (en) 2008-01-10 2015-05-19 American Air Liquide, Inc. Solid precursor sublimator
DE102008020324A1 (de) 2008-04-23 2009-10-29 Clariant International Limited Polysilazane enthaltende Beschichtungen zur Erhöhung der Lichtausbeute von verkapselten Solarzellen
EP2493963A1 (en) * 2009-10-28 2012-09-05 Dow Corning Corporation Polysilane - polysilazane copolymers and methods for their preparation and use
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
DE102010002405A1 (de) 2010-02-26 2011-09-01 Evonik Degussa Gmbh Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung
US7994019B1 (en) 2010-04-01 2011-08-09 Applied Materials, Inc. Silicon-ozone CVD with reduced pattern loading using incubation period deposition
US8590705B2 (en) 2010-06-11 2013-11-26 Air Products And Chemicals, Inc. Cylinder surface treated container for monochlorosilane
JP2012004349A (ja) * 2010-06-17 2012-01-05 Az Electronic Materials Kk シリコンオキシナイトライド膜の形成方法およびそれにより製造されたシリコンオキシナイトライド膜付き基板
JP5405437B2 (ja) 2010-11-05 2014-02-05 ＡｚエレクトロニックマテリアルズＩｐ株式会社 アイソレーション構造の形成方法
KR101243339B1 (ko) 2010-12-14 2013-03-13 솔브레인 주식회사 폴리실라잔 용액의 제조방법 및 이를 이용하여 제조된 폴리실라잔 용액
CN102569060B (zh) 2010-12-22 2015-03-11 第一毛织株式会社 形成硅氧层的组合物及其生产方法、利用其的硅氧层及生产硅氧层的方法
US8796398B2 (en) * 2010-12-27 2014-08-05 Az Electronic Materials Usa Corp. Superfine pattern mask, method for production thereof, and method employing the same for forming superfine pattern
KR101387740B1 (ko) 2011-01-07 2014-04-21 제일모직주식회사 실리카계 절연층 형성용 조성물, 실리카계 절연층 형성용 조성물의 제조방법, 실리카계 절연층 및 실리카계 절연층의 제조방법
JP5781323B2 (ja) 2011-02-18 2015-09-16 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 絶縁膜の形成方法
US20140127630A1 (en) * 2011-06-22 2014-05-08 Az Electronic Materials Usa Corp. Silicon oxynitride film formation method and substrate equipped with silicon oxynitride film formed thereby
KR101432606B1 (ko) 2011-07-15 2014-08-21 제일모직주식회사 갭필용 충전제, 이의 제조 방법 및 이를 사용한 반도체 캐패시터의 제조 방법
JP5970197B2 (ja) * 2012-02-08 2016-08-17 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 無機ポリシラザン樹脂
US9567488B2 (en) 2012-07-03 2017-02-14 Burning Bush Group, Llc High performance silicon based coating compositions
DE102012214290A1 (de) * 2012-08-10 2014-02-13 Evonik Industries Ag Verfahren zur gekoppelten Herstellung von Polysilazanen und Trisilylamin
US20140341794A1 (en) 2012-08-10 2014-11-20 Evonik Industries Ag Process for the coupled preparation of polysilazanes and trisilylamine
JP6017256B2 (ja) * 2012-10-11 2016-10-26 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 ケイ素質緻密膜の形成方法
US9006079B2 (en) * 2012-10-19 2015-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming semiconductor fins with reduced widths
JP6060460B2 (ja) 2012-11-22 2017-01-18 アーゼット・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ シリカ質膜の形成方法及び同方法で形成されたシリカ質膜
KR101583232B1 (ko) 2012-12-31 2016-01-07 제일모직 주식회사 중합체 제조 방법 및 실리카계 절연막 형성용 조성물
KR101599952B1 (ko) 2012-12-31 2016-03-04 제일모직 주식회사 중합체 제조 방법 및 실리카계 절연막 형성용 조성물
DE102013209802A1 (de) * 2013-05-27 2014-11-27 Evonik Industries Ag Verfahren zur gekoppelten Herstellung von Trisilylamin und Polysilazanen mit einer Molmasse bis 500 g/mol
KR102326396B1 (ko) 2013-09-27 2021-11-12 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 아민 치환된 트리실릴아민 및 트리디실릴아민 화합물
US10186698B2 (en) 2013-12-04 2019-01-22 Cornell University Ceramic-polymer hybrid nanostructures, methods for producing and applications thereof
JP6104785B2 (ja) * 2013-12-09 2017-03-29 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ペルヒドロポリシラザン、およびそれを含む組成物、ならびにそれを用いたシリカ質膜の形成方法
JP6474388B2 (ja) 2014-04-24 2019-02-27 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 共重合ポリシラザン、その製造方法およびそれを含む組成物ならびにそれを用いたシリカ質膜の形成方法
WO2016065239A1 (en) 2014-10-23 2016-04-28 Massachusetts Institute Of Technology Purification of ultra-high saline and contaminated water by multi-stage ion concentration polarization (icp) desalination
SG11201703196WA (en) * 2014-10-24 2017-05-30 Versum Materials Us Llc Compositions and methods using same for deposition of silicon-containing films
KR101837971B1 (ko) 2014-12-19 2018-03-13 삼성에스디아이 주식회사 실리카계 막 형성용　조성물, 실리카계 막, 및 전자 디바이스
JP2016159561A (ja) 2015-03-04 2016-09-05 三菱瓦斯化学株式会社 ガスバリア用フィルム
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US10192734B2 (en) 2016-12-11 2019-01-29 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude Short inorganic trisilylamine-based polysilazanes for thin film deposition

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TWI783956B (zh) 2022-11-21
EP4293085A2 (en) 2023-12-20
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TW201825389A (zh) 2018-07-16
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JP7198751B2 (ja) 2023-01-04
US10647578B2 (en) 2020-05-12
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