SG10202002368YA - Phase shift mask blank and phase shift mask - Google Patents
Phase shift mask blank and phase shift maskInfo
- Publication number
- SG10202002368YA SG10202002368YA SG10202002368YA SG10202002368YA SG10202002368YA SG 10202002368Y A SG10202002368Y A SG 10202002368YA SG 10202002368Y A SG10202002368Y A SG 10202002368YA SG 10202002368Y A SG10202002368Y A SG 10202002368YA SG 10202002368Y A SG10202002368Y A SG 10202002368YA
- Authority
- SG
- Singapore
- Prior art keywords
- phase shift
- shift mask
- blank
- mask blank
- phase
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019067065 | 2019-03-29 | ||
JP2019111026 | 2019-06-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202002368YA true SG10202002368YA (en) | 2020-10-29 |
Family
ID=69845266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202002368YA SG10202002368YA (en) | 2019-03-29 | 2020-03-16 | Phase shift mask blank and phase shift mask |
Country Status (7)
Country | Link |
---|---|
US (1) | US11307490B2 (ja) |
EP (1) | EP3719575A1 (ja) |
JP (1) | JP7255512B2 (ja) |
KR (1) | KR102447767B1 (ja) |
CN (1) | CN111752087A (ja) |
SG (1) | SG10202002368YA (ja) |
TW (1) | TWI797436B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112666789B (zh) * | 2020-12-02 | 2024-05-24 | 湖南普照信息材料有限公司 | 一种衰减型高均匀的相移光掩膜坯料及其制备方法 |
CN113488378A (zh) * | 2021-07-21 | 2021-10-08 | 湖南普照信息材料有限公司 | 一种光掩模坯料及其制备方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60114811A (ja) * | 1983-11-28 | 1985-06-21 | Hitachi Ltd | 光導波路およびその製造方法 |
JP3345447B2 (ja) * | 1991-11-13 | 2002-11-18 | 株式会社東芝 | 露光用マスクの製造方法 |
US5547787A (en) | 1992-04-22 | 1996-08-20 | Kabushiki Kaisha Toshiba | Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask |
JP2002040625A (ja) * | 1992-07-17 | 2002-02-06 | Toshiba Corp | 露光用マスク、レジストパターン形成方法及び露光マスク用基板の製造方法 |
JP3064769B2 (ja) | 1992-11-21 | 2000-07-12 | アルバック成膜株式会社 | 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法 |
US5514499A (en) * | 1993-05-25 | 1996-05-07 | Kabushiki Kaisha Toshiba | Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same |
US5415953A (en) * | 1994-02-14 | 1995-05-16 | E. I. Du Pont De Nemours And Company | Photomask blanks comprising transmissive embedded phase shifter |
US5985493A (en) * | 1998-04-08 | 1999-11-16 | Lucent Technologies Inc. | Membrane mask for projection lithography |
JP4933753B2 (ja) | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法 |
JP4551344B2 (ja) | 2006-03-02 | 2010-09-29 | 信越化学工業株式会社 | フォトマスクブランクおよびフォトマスク |
JP4509050B2 (ja) | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
DE102008054139B4 (de) * | 2008-10-31 | 2010-11-11 | Schott Ag | Glas- oder Glaskeramik-Substrat mit Kratzschutzbeschichtung, dessen Verwendung und Verfahren zu dessen Herstellung |
JP6264238B2 (ja) * | 2013-11-06 | 2018-01-24 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法 |
JP2016035559A (ja) * | 2014-08-04 | 2016-03-17 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク及びその製造方法 |
JP6087401B2 (ja) * | 2015-08-14 | 2017-03-01 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
JP6500791B2 (ja) * | 2016-01-22 | 2019-04-17 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク及びその製造方法 |
JP6733464B2 (ja) * | 2016-09-28 | 2020-07-29 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク |
JP6432636B2 (ja) * | 2017-04-03 | 2018-12-05 | 凸版印刷株式会社 | フォトマスクブランク、フォトマスク及びフォトマスクの製造方法 |
US20200285144A1 (en) * | 2017-09-21 | 2020-09-10 | Hoya Corporation | Mask blank, transfer mask, and method for manufacturing semiconductor device |
JP6919475B2 (ja) | 2017-09-29 | 2021-08-18 | 富士通株式会社 | 検知プログラム、装置、及び方法 |
JP7063607B2 (ja) | 2017-12-22 | 2022-05-09 | 株式会社三共 | 遊技機 |
JP7264083B2 (ja) * | 2019-03-29 | 2023-04-25 | 信越化学工業株式会社 | 位相シフトマスクブランクス、その製造方法及び位相シフトマスク |
-
2020
- 2020-02-17 JP JP2020024101A patent/JP7255512B2/ja active Active
- 2020-03-16 SG SG10202002368YA patent/SG10202002368YA/en unknown
- 2020-03-17 EP EP20163731.1A patent/EP3719575A1/en active Pending
- 2020-03-24 KR KR1020200035424A patent/KR102447767B1/ko active IP Right Grant
- 2020-03-26 TW TW109110144A patent/TWI797436B/zh active
- 2020-03-27 US US16/832,395 patent/US11307490B2/en active Active
- 2020-03-27 CN CN202010227055.1A patent/CN111752087A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN111752087A (zh) | 2020-10-09 |
US11307490B2 (en) | 2022-04-19 |
US20200310241A1 (en) | 2020-10-01 |
KR20200115241A (ko) | 2020-10-07 |
JP2020204760A (ja) | 2020-12-24 |
EP3719575A1 (en) | 2020-10-07 |
JP7255512B2 (ja) | 2023-04-11 |
KR102447767B1 (ko) | 2022-09-26 |
TW202102932A (zh) | 2021-01-16 |
TWI797436B (zh) | 2023-04-01 |
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