SG10201912818WA - Topographic phase control for overlay measurement - Google Patents

Topographic phase control for overlay measurement

Info

Publication number
SG10201912818WA
SG10201912818WA SG10201912818WA SG10201912818WA SG10201912818WA SG 10201912818W A SG10201912818W A SG 10201912818WA SG 10201912818W A SG10201912818W A SG 10201912818WA SG 10201912818W A SG10201912818W A SG 10201912818WA SG 10201912818W A SG10201912818W A SG 10201912818WA
Authority
SG
Singapore
Prior art keywords
phase control
overlay measurement
topographic phase
topographic
overlay
Prior art date
Application number
SG10201912818WA
Other languages
English (en)
Inventor
Vladimir Levinski
Yuri Paskover
Amnon Manassen
Yoni Shalibo
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG10201912818WA publication Critical patent/SG10201912818WA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65Raman scattering
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/32Fiducial marks and measuring scales within the optical system
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28Systems for automatic generation of focusing signals
    • G02B7/36Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
    • G02B7/38Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals measured at different points on the optical axis, e.g. focussing on two or more planes and comparing image data
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/80Analysis of captured images to determine intrinsic or extrinsic camera parameters, i.e. camera calibration
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60Control of cameras or camera modules
    • H04N23/67Focus control based on electronic image sensor signals
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60Control of cameras or camera modules
    • H04N23/67Focus control based on electronic image sensor signals
    • H04N23/672Focus control based on electronic image sensor signals based on the phase difference signals
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60Control of cameras or camera modules
    • H04N23/67Focus control based on electronic image sensor signals
    • H04N23/673Focus control based on electronic image sensor signals based on contrast or high frequency components of image signals, e.g. hill climbing method
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65Raman scattering
    • G01N2021/653Coherent methods [CARS]
SG10201912818WA 2015-05-19 2016-05-19 Topographic phase control for overlay measurement SG10201912818WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562163783P 2015-05-19 2015-05-19
US201562222724P 2015-09-23 2015-09-23

Publications (1)

Publication Number Publication Date
SG10201912818WA true SG10201912818WA (en) 2020-02-27

Family

ID=57320785

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10201912818WA SG10201912818WA (en) 2015-05-19 2016-05-19 Topographic phase control for overlay measurement
SG10201912822UA SG10201912822UA (en) 2015-05-19 2016-05-19 Topographic phase control for overlay measurement
SG10201912816UA SG10201912816UA (en) 2015-05-19 2016-05-19 Topographic phase control for overlay measurement

Family Applications After (2)

Application Number Title Priority Date Filing Date
SG10201912822UA SG10201912822UA (en) 2015-05-19 2016-05-19 Topographic phase control for overlay measurement
SG10201912816UA SG10201912816UA (en) 2015-05-19 2016-05-19 Topographic phase control for overlay measurement

Country Status (7)

Country Link
US (5) US10520832B2 (zh)
JP (4) JP6879939B2 (zh)
KR (4) KR102607646B1 (zh)
CN (4) CN112859541A (zh)
SG (3) SG10201912818WA (zh)
TW (4) TWI752764B (zh)
WO (1) WO2016187468A1 (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102607646B1 (ko) * 2015-05-19 2023-11-29 케이엘에이 코포레이션 오버레이 측정을 위한 지형 위상 제어
US9989806B2 (en) * 2015-09-10 2018-06-05 Samsung Display Co., Ltd. Color conversion panel and display device including the same
EP3387371B1 (en) 2015-12-08 2023-04-19 KLA-Tencor Corporation Control of amplitude and phase of diffraction orders using polarizing targets and polarized illumination
CN110312966B (zh) * 2017-02-10 2022-03-25 科磊股份有限公司 与散射测量术测量中的光栅非对称相关的不精确性的减轻
JP2020529621A (ja) 2017-06-06 2020-10-08 ケーエルエー コーポレイション レティクル最適化アルゴリズム及び最適ターゲットデザイン
EP3454123A1 (en) * 2017-09-06 2019-03-13 ASML Netherlands B.V. Metrology method and apparatus
EP3499312A1 (en) * 2017-12-15 2019-06-19 ASML Netherlands B.V. Metrology apparatus and a method of determining a characteristic of interest
WO2019091678A1 (en) * 2017-11-07 2019-05-16 Asml Netherlands B.V. Metrology apparatus and a method of determining a characteristic of interest
US11085754B2 (en) * 2017-12-12 2021-08-10 Kla Corporation Enhancing metrology target information content
EP3521929A1 (en) * 2018-02-02 2019-08-07 ASML Netherlands B.V. Method of determining an optimal focus height for a metrology apparatus
KR102544707B1 (ko) 2018-02-27 2023-06-16 에이에스엠엘 네델란즈 비.브이. 기판 상의 하나 이상의 구조체의 특성을 결정하기 위한 계측 장치 및 방법
IL277294B1 (en) * 2018-03-19 2024-01-01 Kla Corp Spread measurement using multiple wavelengths
US10677588B2 (en) 2018-04-09 2020-06-09 Kla-Tencor Corporation Localized telecentricity and focus optimization for overlay metrology
WO2019236084A1 (en) * 2018-06-07 2019-12-12 Kla-Tencor Corporation Overlay measurement using phase and amplitude modeling
WO2020046408A1 (en) 2018-08-28 2020-03-05 Kla-Tencor Corporation Off-axis illumination overlay measurement using two-diffracted orders imaging
KR20210091803A (ko) * 2018-12-31 2021-07-22 에이에스엠엘 네델란즈 비.브이. 오버레이 계측을 위한 방법 및 그 장치
WO2020168140A1 (en) 2019-02-14 2020-08-20 Kla Corporation Method of measuring misregistration in the manufacture of topographic semiconductor device wafers
US11703460B2 (en) 2019-07-09 2023-07-18 Kla Corporation Methods and systems for optical surface defect material characterization
US11914290B2 (en) 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11346657B2 (en) * 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
KR20210156894A (ko) * 2020-06-18 2021-12-28 삼성전자주식회사 스루-포커스 이미지 기반 계측 장치, 그것의 동작 방법, 및 그 동작을 실행하는 컴퓨팅 장치
CN113467033A (zh) * 2021-06-24 2021-10-01 南昌欧菲光电技术有限公司 一种摄像头模组及其透镜的定位方法
CN113777731A (zh) * 2021-08-11 2021-12-10 中国工程物理研究院应用电子学研究所 一种共轴反转环型连续变密度衰减器装置及其工作方法
CN113985711B (zh) * 2021-10-28 2024-02-02 无锡卓海科技股份有限公司 一种套刻测量装置

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644172A (en) * 1984-02-22 1987-02-17 Kla Instruments Corporation Electronic control of an automatic wafer inspection system
US5666197A (en) * 1996-08-21 1997-09-09 Polaroid Corporation Apparatus and methods employing phase control and analysis of evanescent illumination for imaging and metrology of subwavelength lateral surface topography
JPH10284370A (ja) * 1997-04-03 1998-10-23 Nikon Corp 焦点位置検出装置及び該装置を備えた投影露光装置
JP2001307975A (ja) * 2000-02-18 2001-11-02 Nikon Corp 荷電粒子線露光装置及び半導体デバイスの製造方法
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
JP2002170760A (ja) * 2000-12-01 2002-06-14 Nikon Corp 荷電粒子ビーム露光装置、荷電粒子ビーム露光方法及びデバイス製造方法
US7072502B2 (en) * 2001-06-07 2006-07-04 Applied Materials, Inc. Alternating phase-shift mask inspection method and apparatus
US6794671B2 (en) * 2002-07-17 2004-09-21 Particle Sizing Systems, Inc. Sensors and methods for high-sensitivity optical particle counting and sizing
JP4746987B2 (ja) * 2002-12-05 2011-08-10 ケーエルエー−テンカー コーポレイション 散乱計測を用いてオーバレイ誤差を検出する装置および方法
US7230704B2 (en) * 2003-06-06 2007-06-12 Tokyo Electron Limited Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay
JP4734261B2 (ja) 2004-02-18 2011-07-27 ケーエルエー−テンカー コーポレイション 連続変化するオフセットマークと、オーバレイ決定方法
US20060164649A1 (en) 2005-01-24 2006-07-27 Eliezer Rosengaus Multi-spectral techniques for defocus detection
DE102006016131A1 (de) * 2005-09-22 2007-03-29 Robert Bosch Gmbh Interferometrische Messvorrichtung
JP2007140212A (ja) * 2005-11-18 2007-06-07 Toshiba Corp フォトマスク及び半導体装置の製造方法
US20070238955A1 (en) * 2006-01-18 2007-10-11 The General Hospital Corporation Systems and methods for generating data using one or more endoscopic microscopy techniques
US7408642B1 (en) * 2006-02-17 2008-08-05 Kla-Tencor Technologies Corporation Registration target design for managing both reticle grid error and wafer overlay
DE102006021557B3 (de) * 2006-05-08 2007-07-12 Carl Mahr Holding Gmbh Vorrichtung und Verfahren zur kombinierten interferometrischen und abbildungsbasierten Geometrieerfassung, insbesondere in der Mikrosystemtechnik
US7528941B2 (en) 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
WO2008132799A1 (ja) * 2007-04-12 2008-11-06 Nikon Corporation 計測方法、露光方法及びデバイス製造方法
JP4966724B2 (ja) * 2007-04-20 2012-07-04 キヤノン株式会社 露光装置及びデバイス製造方法
US7602491B2 (en) * 2007-04-26 2009-10-13 Kla- Tencor Corporation Optical gain approach for enhancement of overlay and alignment systems performance
US7869022B2 (en) * 2007-07-18 2011-01-11 Asml Netherlands B.V. Inspection method and apparatus lithographic apparatus, lithographic processing cell, device manufacturing method and distance measuring system
US20090034071A1 (en) * 2007-07-31 2009-02-05 Dean Jennings Method for partitioning and incoherently summing a coherent beam
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
US9239455B2 (en) * 2007-12-31 2016-01-19 Stc.Unm Structural illumination and evanescent coupling for the extension of imaging interferometric microscopy
NL1036857A1 (nl) 2008-04-21 2009-10-22 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
US8531648B2 (en) * 2008-09-22 2013-09-10 Asml Netherlands B.V. Lithographic apparatus, programmable patterning device and lithographic method
JP5361322B2 (ja) * 2008-10-14 2013-12-04 キヤノン株式会社 露光装置及びデバイスの製造方法
DE102009044151B4 (de) * 2009-05-19 2012-03-29 Kla-Tencor Mie Gmbh Vorrichtung zur optischen Waferinspektion
CN102498441B (zh) * 2009-07-31 2015-09-16 Asml荷兰有限公司 量测方法和设备、光刻系统以及光刻处理单元
CN101699265A (zh) * 2009-10-28 2010-04-28 上海理工大学 动态偏振光散射颗粒测量装置及测量方法
US8896832B2 (en) 2010-06-17 2014-11-25 Kla-Tencor Corp. Discrete polarization scatterometry
KR101793538B1 (ko) 2010-07-19 2017-11-03 에이에스엠엘 네델란즈 비.브이. 오버레이 오차를 결정하는 장치 및 방법
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US9007584B2 (en) * 2010-12-27 2015-04-14 Nanometrics Incorporated Simultaneous measurement of multiple overlay errors using diffraction based overlay
WO2012109348A1 (en) * 2011-02-10 2012-08-16 Kla-Tencor Corporation Structured illumination for contrast enhancement in overlay metrology
WO2012136434A2 (en) * 2011-04-08 2012-10-11 Asml Netherlands B.V. Lithographic apparatus, programmable patterning device and lithographic method
US8582114B2 (en) 2011-08-15 2013-11-12 Kla-Tencor Corporation Overlay metrology by pupil phase analysis
KR102330743B1 (ko) * 2012-06-26 2021-11-23 케이엘에이 코포레이션 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
US8913237B2 (en) 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
US9329033B2 (en) * 2012-09-05 2016-05-03 Kla-Tencor Corporation Method for estimating and correcting misregistration target inaccuracy
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9581430B2 (en) * 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US9875946B2 (en) * 2013-04-19 2018-01-23 Kla-Tencor Corporation On-device metrology
US9189705B2 (en) * 2013-08-08 2015-11-17 JSMSW Technology LLC Phase-controlled model-based overlay measurement systems and methods
US10162271B2 (en) * 2014-02-03 2018-12-25 Asml Netherlands B.V. Metrology method and apparatus, substrate, lithographic system and device manufacturing method
JP6433504B2 (ja) * 2014-02-21 2018-12-05 エーエスエムエル ネザーランズ ビー.ブイ. ターゲット構成の最適化及び関連するターゲット
US10161885B2 (en) * 2014-04-07 2018-12-25 Nova Measuring Instruments Ltd. Optical phase measurement method and system
US20150355098A1 (en) * 2014-05-06 2015-12-10 California Institute Of Technology Rotating scattering plane based nonlinear optical spectrometer to study the crystallographic and electronic symmetries of crystals
SG11201703585RA (en) 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
KR102607646B1 (ko) * 2015-05-19 2023-11-29 케이엘에이 코포레이션 오버레이 측정을 위한 지형 위상 제어

Also Published As

Publication number Publication date
JP2021128169A (ja) 2021-09-02
US10520832B2 (en) 2019-12-31
CN112859540A (zh) 2021-05-28
JP2021128170A (ja) 2021-09-02
TWI752764B (zh) 2022-01-11
US20200142321A1 (en) 2020-05-07
CN107636538A (zh) 2018-01-26
TW202122930A (zh) 2021-06-16
TW202113504A (zh) 2021-04-01
KR20210149884A (ko) 2021-12-09
US20200142322A1 (en) 2020-05-07
US11314173B2 (en) 2022-04-26
JP7253006B2 (ja) 2023-04-05
TWI715582B (zh) 2021-01-11
KR20180000730A (ko) 2018-01-03
JP6879939B2 (ja) 2021-06-02
SG10201912822UA (en) 2020-02-27
JP2018515782A (ja) 2018-06-14
KR102607646B1 (ko) 2023-11-29
JP2021128168A (ja) 2021-09-02
TWI760984B (zh) 2022-04-11
US20170146915A1 (en) 2017-05-25
KR102334168B1 (ko) 2021-12-06
SG10201912816UA (en) 2020-02-27
CN112859542A (zh) 2021-05-28
KR20210149885A (ko) 2021-12-09
TW201712435A (zh) 2017-04-01
JP7250064B2 (ja) 2023-03-31
TW202113505A (zh) 2021-04-01
JP7250063B2 (ja) 2023-03-31
TWI755987B (zh) 2022-02-21
US20210255551A1 (en) 2021-08-19
CN107636538B (zh) 2021-02-19
US20200142323A1 (en) 2020-05-07
KR20210149886A (ko) 2021-12-09
WO2016187468A1 (en) 2016-11-24
CN112859541A (zh) 2021-05-28

Similar Documents

Publication Publication Date Title
SG10201912816UA (en) Topographic phase control for overlay measurement
IL246915B (en) Signal response metrology for figure-based overlap measurements
EP3167304A4 (en) Detector for determining a position of at least one object
EP3155367A4 (en) Detector for determining a position of at least one object
GB201513630D0 (en) Expendable access control
EP3155804A4 (en) Reliability measurements for phase based autofocus
GB201408858D0 (en) Handover control
GB201617250D0 (en) Determining variance factors for complex road segments
IL254661A0 (en) phase shifter
GB2538237B (en) Available register control for register renaming
GB201506508D0 (en) Path control system
HK1249801A1 (zh) 控制棒位置指示器
GB2534408B (en) Position reference sensor
IL255359A (en) phase change material
HK1248101A1 (zh) 用於抑制血管生成的肽
GB201510947D0 (en) Synchronised control
EP3021417A4 (en) Phase shift system
PL3335289T4 (pl) System kompensacji fazowych
KR20180084894A (ko) 가전 제품용 버스 제어 시스템
AU366233S (en) Control box
GB201515503D0 (en) Position sensing
EP3355845A4 (en) OVERLAY
GB2526113B (en) A control system for a shower
AU366232S (en) Control box
IL247251A0 (en) Layer design optimization