JP7253006B2 - 光学システム - Google Patents
光学システム Download PDFInfo
- Publication number
- JP7253006B2 JP7253006B2 JP2021077243A JP2021077243A JP7253006B2 JP 7253006 B2 JP7253006 B2 JP 7253006B2 JP 2021077243 A JP2021077243 A JP 2021077243A JP 2021077243 A JP2021077243 A JP 2021077243A JP 7253006 B2 JP7253006 B2 JP 7253006B2
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- target
- illumination
- imaging
- positions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/32—Fiducial marks and measuring scales within the optical system
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/28—Systems for automatic generation of focusing signals
- G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
- G02B7/38—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals measured at different points on the optical axis, e.g. focussing on two or more planes and comparing image data
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/80—Analysis of captured images to determine intrinsic or extrinsic camera parameters, i.e. camera calibration
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
- H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
- H04N23/673—Focus control based on electronic image sensor signals based on contrast or high frequency components of image signals, e.g. hill climbing method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N2021/653—Coherent methods [CARS]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Multimedia (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Theoretical Computer Science (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Microscoopes, Condenser (AREA)
Description
本願は、2015年5月19日付米国暫定特許出願第62/163783号並びに2015年9月23日付米国暫定特許出願第62/222724号に基づく利益を主張する出願であるので、この参照を以てその全容を本願に繰り入れることにする。
Claims (7)
- 集光路の第1検出焦点位置を有する、計量ツール内の光学システムであって、
前記集光路に沿って配置され、前記第1検出焦点位置とは異なる集光路長を有する少なくとも2個の対応する追加的焦点位置を提供するように位置決めされた、少なくとも2個のビーム分岐素子であって、前記第1検出焦点位置および前記少なくとも2個の対応する追加的焦点位置は、検出平面に関して異なる位置にあり、前記少なくとも2個の対応する追加的焦点位置はウェハの異なる層の最良コントラスト焦点位置に対応する少なくとも2個のビーム分岐素子と、
対物レンズと、
被写界平面に、前記第1検出焦点位置におけるターゲット像の基準として構成され、前記対物レンズと前記ビーム分岐素子との間の前記集光路に配置されたレチクルと、
異なる軸方向変位において画像を捕捉する3つの検出器であって、該検出器は同時に画像を捕捉する、検出器と、
前記光学システムを使用するウェハの各層における複数の格子の領域からの散乱の合計で画像を捕捉する間に、層毎の捕捉センタリングを提供するように構成されたプロセッサと、
を含む、光学システム。 - 請求項1に記載の光学システムであって、更にミラーを備え、前記2個のビーム分岐素子と前記ミラーとが前記第1検出焦点位置および前記2個の対応する追加的焦点位置を提供するように構成された光学システム。
- 請求項1に記載の光学システムであって、前記第1検出焦点位置と前記2個の対応する追加的焦点位置とに対応する、パワーの等しい3つの画像を提供する光学システム。
- 請求項1に記載の光学システムであって、前記第1検出焦点位置または前記2個の対応する追加の焦点位置の別個の画像が生成され、前記別個の画像は、前記光学システムを使用して撮像されたターゲット層の変位を決定するように構成される、光学システム。
- 請求項1に記載の光学システムであって、
前記レチクルは、前記光学システムを使用して撮像されたターゲット層の変位の決定についての参照中心である、光学システム。 - 請求項1に記載の光学システムであって、
前記光学システムは、
スペクトル範囲Δλ≦10nm、照明数値開口NA≦0.1、およびオーバーレイ拡大誤差と焦点ずれの度合いとの間の依存性に従って、オーバーレイ拡大誤差なしに相当する焦点位置で、動作するように構成されている、光学システム。 - 請求項1に記載の光学システムであって、
前記プロセッサはさらに、画像の不正確性拡大因子を推定し、焦点位置に関し前記不正確性拡大因子の符号変化を識別することによって最良のコントラスト位置を決定するように構成される、光学システム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562163783P | 2015-05-19 | 2015-05-19 | |
US62/163,783 | 2015-05-19 | ||
US201562222724P | 2015-09-23 | 2015-09-23 | |
US62/222,724 | 2015-09-23 | ||
JP2017560538A JP6879939B2 (ja) | 2015-05-19 | 2016-05-19 | オーバレイ計測用トポグラフィック位相制御 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017560538A Division JP6879939B2 (ja) | 2015-05-19 | 2016-05-19 | オーバレイ計測用トポグラフィック位相制御 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021128168A JP2021128168A (ja) | 2021-09-02 |
JP7253006B2 true JP7253006B2 (ja) | 2023-04-05 |
Family
ID=57320785
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017560538A Active JP6879939B2 (ja) | 2015-05-19 | 2016-05-19 | オーバレイ計測用トポグラフィック位相制御 |
JP2021077243A Active JP7253006B2 (ja) | 2015-05-19 | 2021-04-30 | 光学システム |
JP2021077245A Active JP7250064B2 (ja) | 2015-05-19 | 2021-04-30 | イメージング計量ターゲットおよび計量方法 |
JP2021077244A Active JP7250063B2 (ja) | 2015-05-19 | 2021-04-30 | 光学システム |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017560538A Active JP6879939B2 (ja) | 2015-05-19 | 2016-05-19 | オーバレイ計測用トポグラフィック位相制御 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021077245A Active JP7250064B2 (ja) | 2015-05-19 | 2021-04-30 | イメージング計量ターゲットおよび計量方法 |
JP2021077244A Active JP7250063B2 (ja) | 2015-05-19 | 2021-04-30 | 光学システム |
Country Status (7)
Country | Link |
---|---|
US (5) | US10520832B2 (ja) |
JP (4) | JP6879939B2 (ja) |
KR (4) | KR102607646B1 (ja) |
CN (4) | CN107636538B (ja) |
SG (3) | SG10201912816UA (ja) |
TW (4) | TWI760984B (ja) |
WO (1) | WO2016187468A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016187468A1 (en) * | 2015-05-19 | 2016-11-24 | Kla-Tencor Corporation | Topographic phase control for overlay measurement |
US9989806B2 (en) * | 2015-09-10 | 2018-06-05 | Samsung Display Co., Ltd. | Color conversion panel and display device including the same |
EP3387371B1 (en) * | 2015-12-08 | 2023-04-19 | KLA-Tencor Corporation | Control of amplitude and phase of diffraction orders using polarizing targets and polarized illumination |
US11112704B2 (en) | 2017-02-10 | 2021-09-07 | Kla-Tencor Corporation | Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements |
US10754261B2 (en) * | 2017-06-06 | 2020-08-25 | Kla-Tencor Corporation | Reticle optimization algorithms and optimal target design |
EP3454123A1 (en) * | 2017-09-06 | 2019-03-13 | ASML Netherlands B.V. | Metrology method and apparatus |
KR102408786B1 (ko) | 2017-11-07 | 2022-06-13 | 에이에스엠엘 네델란즈 비.브이. | 관심 특성을 결정하는 계측 장치 및 방법 |
EP3499312A1 (en) * | 2017-12-15 | 2019-06-19 | ASML Netherlands B.V. | Metrology apparatus and a method of determining a characteristic of interest |
US11085754B2 (en) * | 2017-12-12 | 2021-08-10 | Kla Corporation | Enhancing metrology target information content |
EP3521929A1 (en) * | 2018-02-02 | 2019-08-07 | ASML Netherlands B.V. | Method of determining an optimal focus height for a metrology apparatus |
KR102544707B1 (ko) | 2018-02-27 | 2023-06-16 | 에이에스엠엘 네델란즈 비.브이. | 기판 상의 하나 이상의 구조체의 특성을 결정하기 위한 계측 장치 및 방법 |
EP3762776A4 (en) * | 2018-03-19 | 2021-12-22 | Kla-Tencor Corporation | MEASURING THE OVERLAP USING MULTIPLE WAVELENGTHS |
US10677588B2 (en) * | 2018-04-09 | 2020-06-09 | Kla-Tencor Corporation | Localized telecentricity and focus optimization for overlay metrology |
WO2019236084A1 (en) * | 2018-06-07 | 2019-12-12 | Kla-Tencor Corporation | Overlay measurement using phase and amplitude modeling |
US11281111B2 (en) | 2018-08-28 | 2022-03-22 | Kla-Tencor Corporation | Off-axis illumination overlay measurement using two-diffracted orders imaging |
KR20210091803A (ko) * | 2018-12-31 | 2021-07-22 | 에이에스엠엘 네델란즈 비.브이. | 오버레이 계측을 위한 방법 및 그 장치 |
US11573497B2 (en) | 2019-02-14 | 2023-02-07 | Kla Corporation | System and method for measuring misregistration of semiconductor device wafers utilizing induced topography |
US11703460B2 (en) * | 2019-07-09 | 2023-07-18 | Kla Corporation | Methods and systems for optical surface defect material characterization |
US11914290B2 (en) * | 2019-07-24 | 2024-02-27 | Kla Corporation | Overlay measurement targets design |
US11346657B2 (en) * | 2020-05-22 | 2022-05-31 | Kla Corporation | Measurement modes for overlay |
KR20210156894A (ko) * | 2020-06-18 | 2021-12-28 | 삼성전자주식회사 | 스루-포커스 이미지 기반 계측 장치, 그것의 동작 방법, 및 그 동작을 실행하는 컴퓨팅 장치 |
CN113467033A (zh) * | 2021-06-24 | 2021-10-01 | 南昌欧菲光电技术有限公司 | 一种摄像头模组及其透镜的定位方法 |
CN113777731A (zh) * | 2021-08-11 | 2021-12-10 | 中国工程物理研究院应用电子学研究所 | 一种共轴反转环型连续变密度衰减器装置及其工作方法 |
CN113985711B (zh) * | 2021-10-28 | 2024-02-02 | 无锡卓海科技股份有限公司 | 一种套刻测量装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004533015A (ja) | 2001-06-07 | 2004-10-28 | アプライド マテリアルズ インコーポレイテッド | 交互位相シフトマスクの検査方法および装置 |
WO2014004564A1 (en) | 2012-06-26 | 2014-01-03 | Kla-Tencor Corporation | Scanning in angle-resolved reflectometry and algorithmically eliminating diffraction from optical metrology |
JP2015038474A (ja) | 2013-08-08 | 2015-02-26 | ジェイエスエムエスダブリュー テクノロジー リミテッド・ライアビリティー・カンパニーJSMSW Technology LLC | 位相制御モデルに基づくオーバーレイ測定システム及び方法 |
Family Cites Families (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4644172A (en) * | 1984-02-22 | 1987-02-17 | Kla Instruments Corporation | Electronic control of an automatic wafer inspection system |
US5666197A (en) * | 1996-08-21 | 1997-09-09 | Polaroid Corporation | Apparatus and methods employing phase control and analysis of evanescent illumination for imaging and metrology of subwavelength lateral surface topography |
JPH10284370A (ja) * | 1997-04-03 | 1998-10-23 | Nikon Corp | 焦点位置検出装置及び該装置を備えた投影露光装置 |
JP2001307975A (ja) * | 2000-02-18 | 2001-11-02 | Nikon Corp | 荷電粒子線露光装置及び半導体デバイスの製造方法 |
US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
US6891627B1 (en) * | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
JP2002170760A (ja) * | 2000-12-01 | 2002-06-14 | Nikon Corp | 荷電粒子ビーム露光装置、荷電粒子ビーム露光方法及びデバイス製造方法 |
US6794671B2 (en) * | 2002-07-17 | 2004-09-21 | Particle Sizing Systems, Inc. | Sensors and methods for high-sensitivity optical particle counting and sizing |
AU2003298003A1 (en) * | 2002-12-05 | 2004-06-30 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
US7230704B2 (en) * | 2003-06-06 | 2007-06-12 | Tokyo Electron Limited | Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay |
JP4734261B2 (ja) | 2004-02-18 | 2011-07-27 | ケーエルエー−テンカー コーポレイション | 連続変化するオフセットマークと、オーバレイ決定方法 |
DE102005006724A1 (de) * | 2004-10-20 | 2006-08-10 | Universität Stuttgart | Verfahren und Anordung zur konfokalen Spektral-Interferometrie, insbesondere auch zur optischen Kohärenz-Tomografie (OCT)und/oder optischen Kohärenz-Mikroskopie (OCM)von biologischen und technischen Objekten |
US20060164649A1 (en) * | 2005-01-24 | 2006-07-27 | Eliezer Rosengaus | Multi-spectral techniques for defocus detection |
DE102006016131A1 (de) * | 2005-09-22 | 2007-03-29 | Robert Bosch Gmbh | Interferometrische Messvorrichtung |
JP2007140212A (ja) * | 2005-11-18 | 2007-06-07 | Toshiba Corp | フォトマスク及び半導体装置の製造方法 |
US20070238955A1 (en) * | 2006-01-18 | 2007-10-11 | The General Hospital Corporation | Systems and methods for generating data using one or more endoscopic microscopy techniques |
US7408642B1 (en) * | 2006-02-17 | 2008-08-05 | Kla-Tencor Technologies Corporation | Registration target design for managing both reticle grid error and wafer overlay |
DE102006021557B3 (de) * | 2006-05-08 | 2007-07-12 | Carl Mahr Holding Gmbh | Vorrichtung und Verfahren zur kombinierten interferometrischen und abbildungsbasierten Geometrieerfassung, insbesondere in der Mikrosystemtechnik |
US7528941B2 (en) | 2006-06-01 | 2009-05-05 | Kla-Tencor Technolgies Corporation | Order selected overlay metrology |
TW200905157A (en) * | 2007-04-12 | 2009-02-01 | Nikon Corp | Measuring method, exposure method, and device fabricating method |
JP4966724B2 (ja) * | 2007-04-20 | 2012-07-04 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
WO2008134378A1 (en) * | 2007-04-26 | 2008-11-06 | Kla-Tencor Corporation | Optical gain approach for enhancement of overlay and alignment systems performance |
US7869022B2 (en) * | 2007-07-18 | 2011-01-11 | Asml Netherlands B.V. | Inspection method and apparatus lithographic apparatus, lithographic processing cell, device manufacturing method and distance measuring system |
US20090034071A1 (en) * | 2007-07-31 | 2009-02-05 | Dean Jennings | Method for partitioning and incoherently summing a coherent beam |
US8148663B2 (en) * | 2007-07-31 | 2012-04-03 | Applied Materials, Inc. | Apparatus and method of improving beam shaping and beam homogenization |
US9239455B2 (en) * | 2007-12-31 | 2016-01-19 | Stc.Unm | Structural illumination and evanescent coupling for the extension of imaging interferometric microscopy |
NL1036857A1 (nl) | 2008-04-21 | 2009-10-22 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
WO2010032224A2 (en) * | 2008-09-22 | 2010-03-25 | Asml Netherlands B.V. | Lithographic apparatus, programmable patterning device and lithographic method |
JP5361322B2 (ja) * | 2008-10-14 | 2013-12-04 | キヤノン株式会社 | 露光装置及びデバイスの製造方法 |
DE102009044151B4 (de) * | 2009-05-19 | 2012-03-29 | Kla-Tencor Mie Gmbh | Vorrichtung zur optischen Waferinspektion |
NL2005162A (en) * | 2009-07-31 | 2011-02-02 | Asml Netherlands Bv | Methods and scatterometers, lithographic systems, and lithographic processing cells. |
CN101699265A (zh) * | 2009-10-28 | 2010-04-28 | 上海理工大学 | 动态偏振光散射颗粒测量装置及测量方法 |
US8896832B2 (en) | 2010-06-17 | 2014-11-25 | Kla-Tencor Corp. | Discrete polarization scatterometry |
JP6008851B2 (ja) | 2010-07-19 | 2016-10-19 | エーエスエムエル ネザーランズ ビー.ブイ. | オーバレイ誤差を決定する方法及び装置 |
US9927718B2 (en) * | 2010-08-03 | 2018-03-27 | Kla-Tencor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
US9007584B2 (en) * | 2010-12-27 | 2015-04-14 | Nanometrics Incorporated | Simultaneous measurement of multiple overlay errors using diffraction based overlay |
KR102068950B1 (ko) * | 2011-02-10 | 2020-01-21 | 케이엘에이 코포레이션 | 오버레이 계측의 콘트라스트 증강을 위한 구조화 조명 |
US20120224183A1 (en) * | 2011-03-02 | 2012-09-06 | Zygo Corporation | Interferometric metrology of surfaces, films and underresolved structures |
NL2008426A (en) * | 2011-04-08 | 2012-10-09 | Asml Netherlands Bv | Lithographic apparatus, programmable patterning device and lithographic method. |
US8582114B2 (en) * | 2011-08-15 | 2013-11-12 | Kla-Tencor Corporation | Overlay metrology by pupil phase analysis |
WO2013160890A1 (en) * | 2012-04-23 | 2013-10-31 | Ben-Gurion University Of The Negev Research & Development Authority | True-spectroscopic dual mode high resolution full-field optical coherence tomography using liquid crystal devices |
US8913237B2 (en) | 2012-06-26 | 2014-12-16 | Kla-Tencor Corporation | Device-like scatterometry overlay targets |
US9329033B2 (en) * | 2012-09-05 | 2016-05-03 | Kla-Tencor Corporation | Method for estimating and correcting misregistration target inaccuracy |
WO2014062972A1 (en) * | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
US9581430B2 (en) * | 2012-10-19 | 2017-02-28 | Kla-Tencor Corporation | Phase characterization of targets |
US9875946B2 (en) * | 2013-04-19 | 2018-01-23 | Kla-Tencor Corporation | On-device metrology |
CN106164775B (zh) * | 2014-02-03 | 2019-07-19 | Asml荷兰有限公司 | 量测方法和设备、衬底、光刻系统和器件制造方法 |
CN106030414B (zh) * | 2014-02-21 | 2018-10-09 | Asml荷兰有限公司 | 目标布置的优化和相关的目标 |
US10161885B2 (en) * | 2014-04-07 | 2018-12-25 | Nova Measuring Instruments Ltd. | Optical phase measurement method and system |
US20150355098A1 (en) * | 2014-05-06 | 2015-12-10 | California Institute Of Technology | Rotating scattering plane based nonlinear optical spectrometer to study the crystallographic and electronic symmetries of crystals |
SG11201703585RA (en) | 2014-11-25 | 2017-06-29 | Kla Tencor Corp | Analyzing and utilizing landscapes |
WO2016187468A1 (en) * | 2015-05-19 | 2016-11-24 | Kla-Tencor Corporation | Topographic phase control for overlay measurement |
-
2016
- 2016-05-19 WO PCT/US2016/033353 patent/WO2016187468A1/en active Application Filing
- 2016-05-19 KR KR1020217038910A patent/KR102607646B1/ko active IP Right Grant
- 2016-05-19 TW TW109145525A patent/TWI760984B/zh active
- 2016-05-19 US US15/114,175 patent/US10520832B2/en active Active
- 2016-05-19 CN CN201680028226.XA patent/CN107636538B/zh active Active
- 2016-05-19 CN CN202110100983.6A patent/CN112859542A/zh active Pending
- 2016-05-19 CN CN202110100981.7A patent/CN112859541A/zh active Pending
- 2016-05-19 SG SG10201912816UA patent/SG10201912816UA/en unknown
- 2016-05-19 TW TW109145524A patent/TWI755987B/zh active
- 2016-05-19 SG SG10201912822UA patent/SG10201912822UA/en unknown
- 2016-05-19 KR KR1020177036236A patent/KR102334168B1/ko active IP Right Grant
- 2016-05-19 JP JP2017560538A patent/JP6879939B2/ja active Active
- 2016-05-19 CN CN202110100880.XA patent/CN112859540A/zh active Pending
- 2016-05-19 TW TW109145523A patent/TWI752764B/zh active
- 2016-05-19 KR KR1020217038903A patent/KR102665579B1/ko active IP Right Grant
- 2016-05-19 SG SG10201912818WA patent/SG10201912818WA/en unknown
- 2016-05-19 TW TW105115575A patent/TWI715582B/zh active
- 2016-05-19 KR KR1020217038906A patent/KR20210149885A/ko active IP Right Grant
-
2019
- 2019-11-03 US US16/672,480 patent/US20200142322A1/en not_active Abandoned
- 2019-11-03 US US16/672,483 patent/US11314173B2/en active Active
- 2019-11-03 US US16/672,475 patent/US20200142321A1/en not_active Abandoned
-
2021
- 2021-04-26 US US17/241,006 patent/US20210255551A1/en not_active Abandoned
- 2021-04-30 JP JP2021077243A patent/JP7253006B2/ja active Active
- 2021-04-30 JP JP2021077245A patent/JP7250064B2/ja active Active
- 2021-04-30 JP JP2021077244A patent/JP7250063B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004533015A (ja) | 2001-06-07 | 2004-10-28 | アプライド マテリアルズ インコーポレイテッド | 交互位相シフトマスクの検査方法および装置 |
WO2014004564A1 (en) | 2012-06-26 | 2014-01-03 | Kla-Tencor Corporation | Scanning in angle-resolved reflectometry and algorithmically eliminating diffraction from optical metrology |
JP2015038474A (ja) | 2013-08-08 | 2015-02-26 | ジェイエスエムエスダブリュー テクノロジー リミテッド・ライアビリティー・カンパニーJSMSW Technology LLC | 位相制御モデルに基づくオーバーレイ測定システム及び方法 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7253006B2 (ja) | 光学システム | |
NL2013244B1 (en) | Phase-controlled model-based overlay measurement systems and methods. | |
KR20200096843A (ko) | 타겟 측정 방법, 및 계측 장치 | |
WO2009115342A1 (en) | Inspection apparatus for lithography | |
KR102328438B1 (ko) | 계측 장치 | |
JP2020518848A (ja) | メトロロジパラメータ決定及びメトロロジレシピ選択 | |
US10622238B2 (en) | Overlay measurement using phase and amplitude modeling | |
TWI792653B (zh) | 暗場數位全像顯微鏡及相關度量衡方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210518 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210518 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220705 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20221004 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221201 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230314 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230324 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7253006 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |