SG10201906655RA - Memory device for reducing leakage current - Google Patents
Memory device for reducing leakage currentInfo
- Publication number
- SG10201906655RA SG10201906655RA SG10201906655RA SG10201906655RA SG10201906655RA SG 10201906655R A SG10201906655R A SG 10201906655RA SG 10201906655R A SG10201906655R A SG 10201906655RA SG 10201906655R A SG10201906655R A SG 10201906655RA SG 10201906655R A SG10201906655R A SG 10201906655RA
- Authority
- SG
- Singapore
- Prior art keywords
- memory device
- leakage current
- reducing leakage
- reducing
- current
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1695—Protection circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1697—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180110997A KR102510497B1 (ko) | 2018-09-17 | 2018-09-17 | 누설 전류를 감소시키기 위한 메모리 장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201906655RA true SG10201906655RA (en) | 2020-04-29 |
Family
ID=69772541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201906655RA SG10201906655RA (en) | 2018-09-17 | 2019-07-18 | Memory device for reducing leakage current |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10910030B2 (ko) |
| KR (1) | KR102510497B1 (ko) |
| CN (1) | CN110910925A (ko) |
| SG (1) | SG10201906655RA (ko) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11139017B2 (en) * | 2019-11-12 | 2021-10-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-activated bias generator |
| DE102020109378A1 (de) * | 2020-04-03 | 2021-10-07 | Infineon Technologies Ag | Leseschaltung für Resistive-Change-Speicher |
| US11145382B1 (en) * | 2020-05-11 | 2021-10-12 | Nxp Usa, Inc. | Non-volatile memory with a well bias generation circuit |
| US11081167B1 (en) * | 2020-06-26 | 2021-08-03 | Sandisk Technologies Llc | Sense amplifier architecture for low supply voltage operations |
| CN114121072B (zh) | 2020-08-27 | 2023-12-12 | 长鑫存储技术有限公司 | 存储器的调节方法、调节系统以及半导体器件 |
| CN114121096B (zh) | 2020-08-27 | 2024-03-26 | 长鑫存储技术有限公司 | 存储器的调节方法、调节系统以及半导体器件 |
| CN114121058B (zh) * | 2020-08-27 | 2023-08-29 | 长鑫存储技术有限公司 | 存储器的调节方法、调节系统以及半导体器件 |
| US11211107B1 (en) | 2020-09-01 | 2021-12-28 | Avalanche Technology, Inc. | Magnetic memory read circuit and calibration method therefor |
| US11289142B2 (en) | 2020-09-01 | 2022-03-29 | Avalanche Technology, Inc. | Nonvolatile memory sensing circuit including variable current source |
| US11881241B2 (en) * | 2022-03-31 | 2024-01-23 | Globalfoundries U.S. Inc. | Resistive memory array with localized reference cells |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6400608B1 (en) * | 2001-04-25 | 2002-06-04 | Advanced Micro Devices, Inc. | Accurate verify apparatus and method for NOR flash memory cells in the presence of high column leakage |
| JP2007172718A (ja) * | 2005-12-20 | 2007-07-05 | Samsung Electronics Co Ltd | 不揮発性半導体記憶装置 |
| US8004880B2 (en) | 2007-03-06 | 2011-08-23 | Qualcomm Incorporated | Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory |
| KR101550080B1 (ko) | 2008-02-08 | 2015-09-03 | 아이아이아이 홀딩스 3, 엘엘씨 | 자기 메모리 소자, 그 구동 방법 및 불휘발성 기억 장치 |
| US8274819B2 (en) * | 2010-02-04 | 2012-09-25 | Magic Technologies | Read disturb free SMT MRAM reference cell circuit |
| JP2012133836A (ja) * | 2010-12-20 | 2012-07-12 | Toshiba Corp | 抵抗変化型メモリ |
| KR20130026826A (ko) * | 2011-09-06 | 2013-03-14 | 삼성전자주식회사 | 비휘발성 메모리 시스템 및 이를 구비하는 정보처리 시스템 |
| US9110484B2 (en) | 2013-09-24 | 2015-08-18 | Freescale Semiconductor, Inc. | Temperature dependent biasing for leakage power reduction |
| US9111623B1 (en) | 2014-02-12 | 2015-08-18 | Qualcomm Incorporated | NMOS-offset canceling current-latched sense amplifier |
| WO2015132980A1 (en) * | 2014-03-07 | 2015-09-11 | Akira Katayama | Memory device |
| KR102261813B1 (ko) * | 2014-11-26 | 2021-06-07 | 삼성전자주식회사 | 저항성 메모리 장치 및 저항성 메모리 장치의 동작 방법 |
| US9390793B1 (en) | 2015-03-20 | 2016-07-12 | Sandisk Technologies Llc | Leakage current compensation with reference bit line sensing in non-volatile memory |
| KR102358564B1 (ko) | 2015-09-02 | 2022-02-04 | 삼성전자주식회사 | 단락된 메모리 셀의 가변 저항 소자를 갖는 반도체 메모리 장치 |
| KR102426729B1 (ko) * | 2017-08-11 | 2022-07-29 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 동작 방법 |
| KR102476355B1 (ko) * | 2018-05-10 | 2022-12-09 | 삼성전자주식회사 | 레퍼런스 셀을 포함하는 저항성 메모리 장치 및 그것의 동작 방법 |
-
2018
- 2018-09-17 KR KR1020180110997A patent/KR102510497B1/ko active IP Right Grant
-
2019
- 2019-04-22 US US16/390,170 patent/US10910030B2/en active Active
- 2019-07-18 SG SG10201906655RA patent/SG10201906655RA/en unknown
- 2019-09-05 CN CN201910837939.6A patent/CN110910925A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20200090724A1 (en) | 2020-03-19 |
| US10910030B2 (en) | 2021-02-02 |
| CN110910925A (zh) | 2020-03-24 |
| KR20200032296A (ko) | 2020-03-26 |
| KR102510497B1 (ko) | 2023-03-16 |
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