SG10201805793VA - System comprising a semiconductor device and structure - Google Patents

System comprising a semiconductor device and structure

Info

Publication number
SG10201805793VA
SG10201805793VA SG10201805793VA SG10201805793VA SG10201805793VA SG 10201805793V A SG10201805793V A SG 10201805793VA SG 10201805793V A SG10201805793V A SG 10201805793VA SG 10201805793V A SG10201805793V A SG 10201805793VA SG 10201805793V A SG10201805793V A SG 10201805793VA
Authority
SG
Singapore
Prior art keywords
semiconductor device
single crystal
crystal silicon
silicon layer
metal layer
Prior art date
Application number
SG10201805793VA
Inventor
Zvi Or-Bach
Brian Cronquist
Israel Beinglass
Jong J De
Deepak Sekar
Zeev Wurman
Original Assignee
Monolithic 3D Inc
Or Bach Zvi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/577,532 external-priority patent/US20110031997A1/en
Priority claimed from US12/706,520 external-priority patent/US20110199116A1/en
Priority claimed from US12/792,673 external-priority patent/US7964916B2/en
Priority claimed from US12/797,493 external-priority patent/US8115511B2/en
Priority claimed from US12/847,911 external-priority patent/US7960242B2/en
Priority claimed from US12/849,272 external-priority patent/US7986042B2/en
Priority claimed from US12/859,665 external-priority patent/US8405420B2/en
Application filed by Monolithic 3D Inc, Or Bach Zvi filed Critical Monolithic 3D Inc
Publication of SG10201805793VA publication Critical patent/SG10201805793VA/en

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    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
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  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Abstract

SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern. Fig.A -325-
SG10201805793VA 2009-10-12 2010-10-08 System comprising a semiconductor device and structure SG10201805793VA (en)

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US12/577,532 US20110031997A1 (en) 2009-04-14 2009-10-12 Method for fabrication of a semiconductor device and structure
US12/706,520 US20110199116A1 (en) 2010-02-16 2010-02-16 Method for fabrication of a semiconductor device and structure
US12/792,673 US7964916B2 (en) 2009-04-14 2010-06-02 Method for fabrication of a semiconductor device and structure
US12/797,493 US8115511B2 (en) 2009-04-14 2010-06-09 Method for fabrication of a semiconductor device and structure
US12/847,911 US7960242B2 (en) 2009-04-14 2010-07-30 Method for fabrication of a semiconductor device and structure
US12/849,272 US7986042B2 (en) 2009-04-14 2010-08-03 Method for fabrication of a semiconductor device and structure
US12/859,665 US8405420B2 (en) 2009-04-14 2010-08-19 System comprising a semiconductor device and structure
US12/900,379 US8395191B2 (en) 2009-10-12 2010-10-07 Semiconductor device and structure

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US20120012895A1 (en) 2012-01-19
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US9406670B1 (en) 2016-08-02
US8237228B2 (en) 2012-08-07
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US20120273955A1 (en) 2012-11-01
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