CN106706175B - Preparation method of pressure sensor - Google Patents
Preparation method of pressure sensor Download PDFInfo
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- CN106706175B CN106706175B CN201510772381.XA CN201510772381A CN106706175B CN 106706175 B CN106706175 B CN 106706175B CN 201510772381 A CN201510772381 A CN 201510772381A CN 106706175 B CN106706175 B CN 106706175B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
- G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
Abstract
The invention discloses a preparation method of a pressure sensor, which comprises the following steps: providing a semiconductor substrate; forming a pressure sensing layer; forming a mask layer on the pressure induction layer; etching the pressure sensing layer, and forming an opening in an area which is not protected by the mask layer on the top wall of the pressure sensing layer; removing the mask layer by utilizing a first ashing process; carrying out wet cleaning on the etched pressure induction layer; and removing the sacrificial layer through the opening by using a second ashing process, so that the polymer generated in the previous process is removed by a wet method and the chemical solution enters the capacitor cavity, the stability of the electrical property is improved, and the performance of the device is improved.
Description
Technical Field
The invention relates to the technical field of micro-electro-mechanical systems, in particular to a preparation method of a pressure sensor.
Background
Micro Electro Mechanical Systems (MEMS) are a leading-edge research field of multidisciplinary crossing developed on the basis of microelectronic technology, and are a technology for manufacturing micro electromechanical devices by using semiconductor process. Compared with the traditional electromechanical device, the MEMS device has obvious advantages in the aspects of high temperature resistance, small volume and low power consumption. After decades of development, the method has become one of the major scientific and technological fields of world attention, relates to various subjects and technologies such as electronics, machinery, materials, physics, chemistry, biology, medicine and the like, and has wide application prospects.
A pressure sensor is a micro-electro-mechanical system that converts a pressure signal into an electrical signal. They can be classified into piezoresistive pressure sensors and capacitive pressure sensors according to their operating principles. The principle of the capacitive pressure sensor is to measure pressure by changing the capacitance between the pressure sensing layer and the bottom contact electrode by pressure. However, in the pressure sensor of the prior art, a cavity is formed between the bottom electrodes on the semiconductor substrate of the pressure sensing layer, so that the pressure is measured by the capacitance change between the pressure sensing layer and the bottom electrodes, but in the process of forming the cavity, a polymer is generated on the top of the pressure sensing layer in the prior art, and the polymer affects the electrical characteristics of the pressure sensor which is subsequently caused.
Disclosure of Invention
The invention aims to provide a preparation method of a pressure sensor, which solves the problem that the electrical property of a pressure sensing layer is poor in the prior art.
In order to solve the above technical problem, the present invention provides a method for manufacturing a pressure sensor, including:
providing a semiconductor substrate, wherein an interconnection structure and a bottom contact electrode are formed in the semiconductor substrate;
forming a sacrificial layer covering the bottom contact electrode;
forming a pressure sensing layer, wherein the pressure sensing layer covers the sacrificial layer, the upper metal layer of the interconnection structure and the surface of the residual semiconductor substrate, the pressure sensing layer comprises a top wall, a bottom wall and a side wall, the top wall is positioned on the sacrificial layer, the side wall surrounds the sacrificial layer, and the bottom wall is positioned on the upper metal layer of the interconnection structure;
forming a mask layer on the pressure induction layer;
etching the pressure sensing layer, and forming an opening in an area which is not protected by the mask layer on the top wall of the pressure sensing layer;
removing the mask layer by utilizing a first ashing process;
carrying out wet cleaning on the etched pressure induction layer;
and removing the sacrificial layer through the opening by using a second ashing process.
Preferably, the process parameters of the first ashing process are as follows: time: 20-30S/temperature: 170 ℃ to 300 ℃/power: 1000W-2000W/oxygen: the flow 1510 SCCM-3000 SCCM.
Preferably, the process parameters of the second ashing process are as follows: time: 100S-150S/temperature: 170 ℃ to 300 ℃/power: 1000W-2000W/oxygen flow: 1510 SCCM-3000 SCCM/H2N2 flow: 140 SCCM-300 SCCM/CF4 flow: 3SCCM to 8 SCCM.
Compared with the prior art, the preparation method of the pressure sensor provided by the invention has the following advantages:
the polymer generated in the prior process is removed by a wet method, and the chemical solution enters the capacitor cavity, so that the stability of the electrical property is improved, and the performance of the device is improved.
Furthermore, the original one-step ashing process of the mask layer and the amorphous carbon is changed into two steps, and the weak ashing process is used for removing the mask layer, so that the mask layer is removed, the amorphous carbon of the sacrificial layer is prevented from being released, and the performance of the pressure sensor is improved
Drawings
FIG. 1 is a flow chart of a method of making a pressure sensor according to an embodiment of the present invention;
fig. 2 to 9 are schematic cross-sectional views of device structures in the process of manufacturing a pressure sensor according to an embodiment of the present invention.
Detailed Description
The method of making the pressure sensor of the present invention will now be described in more detail with reference to the schematic drawings, in which preferred embodiments of the invention are shown, it being understood that one skilled in the art may modify the invention herein described while still achieving the advantageous effects of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific details must be set forth in order to achieve the developer's specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art.
The invention is described in more detail in the following paragraphs by way of example with reference to the accompanying drawings. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
In the manufacture of the pressure sensor, a cavity needs to be formed between the pressure sensing layer and the bottom contact electrode on the semiconductor substrate, so that the change of the pressure is reflected by the capacitance change between the pressure sensing layer and the bottom contact electrode, however, in the prior art, during the formation of the cavity, a polymer is generated on the top of the pressure sensing layer, and the polymer affects the subsequent electrical characteristics of the pressure sensor. The inventor has found that in the prior art, a mask layer is formed on a pressure sensing layer, then an opening is etched in the pressure sensing layer by using the mask layer, and then a sacrificial layer and the mask layer between the pressure sensing layer and a bottom contact electrode are simultaneously removed by ashing, so that the mask layer can form a polymer in the ashing step. However, since the material characteristics of the sacrificial layer and the mask layer are similar or identical at present, and therefore the sacrificial layer and the mask layer are removed in the same ashing step, a wet cleaning method is usually adopted to remove the polymer after the cavity is formed, but the wet cleaning may cause a cleaning solution to enter the cavity, and then the cleaning solution in the cavity is difficult to completely remove, thereby greatly affecting the performance of the pressure sensor.
The inventor researches and thinks that the removal of the mask layer and the removal of the sacrificial layer are respectively put in different ashing steps by utilizing two-step ashing steps, so that after the mask layer is ashed and removed, the polymer generated in the step is removed by adopting wet cleaning, and then the sacrificial layer is removed by utilizing ashing, thereby avoiding the cleaning solution from entering the cavity.
Referring to fig. 1, the method for manufacturing a pressure sensor of the present invention specifically includes the steps of:
step S11, providing a semiconductor substrate having an interconnect structure and a bottom contact electrode formed therein;
step S12, forming a sacrificial layer covering the bottom contact electrode;
step S13, forming a pressure sensing layer, wherein the pressure sensing layer covers the sacrificial layer, the upper metal layer of the interconnection structure and the rest surface of the semiconductor substrate, the pressure sensing layer comprises a top wall, a bottom wall and a side wall, the top wall is positioned on the sacrificial layer, the side wall surrounds the sacrificial layer, and the bottom wall is positioned on the upper metal layer of the interconnection structure;
step S14, forming a mask layer on the pressure induction layer;
step S15, etching the pressure sensing layer, and forming an opening in the area which is not protected by the mask layer on the top wall of the pressure sensing layer;
step S16, removing the mask layer by a first ashing process;
step S17, performing wet cleaning on the etched pressure induction layer;
in step S18, the sacrificial layer is removed through the opening by a second ashing process.
Fig. 2 to 9 are schematic cross-sectional views illustrating device structures in a process of manufacturing a pressure sensor according to an embodiment of the present invention, and a detection sensor and a method for manufacturing the same according to the present invention will be described in more detail with reference to fig. 2 to 9.
First, step S11 is performed, and referring to fig. 2, a semiconductor substrate 10 is provided.
The semiconductor substrate 10 may include a monocrystalline silicon substrate, a germanium-silicon substrate, a germanium substrate, or a substrate made of other semiconductor materials known to those skilled in the art, and polysilicon, germanium, or germanium-silicon material may be epitaxially grown on the substrate, or silicon oxide, etc. may be epitaxially grown on the substrate.
The semiconductor substrate 10 has embedded therein a control circuit (not shown), an interconnect structure 11 and a bottom contact electrode 12, and the upper metal layer 112 of the interconnect structure and the contact electrode 12 are located on the same plane. The material of the bottom contact electrode 12 and the upper metal layer 112 is selected from aluminum, but not limited to aluminum, and may also be one of titanium, titanium nitride, silver, gold, copper, tungsten, cobalt, nickel, tantalum, platinum, or any combination thereof.
It should be noted that other device structures, such as amplifiers, digital-to-analog converters, analog processing circuits and/or digital processing circuits, interface circuits, and the like, may also be formed in the semiconductor substrate 10, and the methods for forming these device structures may be CMOS processes. Furthermore, the interconnect structure 11 may include plugs and lower metal layers, the specific structure of which needs to be determined according to actual situations, and the interconnect structure 11 in fig. 2 is only used for illustration and does not limit the present invention.
Next, step S12 is performed, and referring to fig. 3, a sacrificial layer 20 is formed on the bottom contact electrode 12 and the surrounding surface of the semiconductor substrate, and the sacrificial layer 20 is subsequently removed, so as to form a cavity between the pressure sensing layer and the bottom contact electrode 12, and sense the change in capacitance.
The sacrificial layer 20 is, for example, amorphous carbon, and a method of forming the amorphous carbon is a Plasma Enhanced Chemical Vapor Deposition (PECVD) process. The parameters of the plasma enhanced chemical vapor deposition process are, for example: the temperature is 250-420 ℃, the pressure is 1-20 torr, the RF power is 800-2000W, and the reaction gas comprises C3H6And He, the flow rate of the reaction gas is 1000 sccm-4200 sccm, wherein C3H6: the volume ratio of He is 2: 1-10: 1. It should be noted that the material of the sacrificial layer 20 is not limited to amorphous carbon, but may be other materials known to those skilled in the art, such as silicon dioxide, amorphous silicon, amorphous germanium, photoresist, polyimide, etc.
Next, step S13 is performed, referring to fig. 4, forming a pressure-sensitive layer 30 covering the sacrificial layer 20, the upper metal layer of the interconnect structure, and the remaining surface of the semiconductor substrate, where the pressure-sensitive layer includes a top wall 31, a bottom wall 33, and a side wall 32, the top wall is located on the sacrificial layer, the side wall surrounds the sacrificial layer, and the bottom wall is located on the upper metal layer of the interconnect structure;
the material of the pressure-sensitive layer 30 is, for example, silicon germanium, which can be deposited by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) or a Low Pressure Chemical Vapor Deposition (LPCVD) process. In this embodiment, LPCVD is adopted, and the process parameters of LPCVD are: the temperature range is 400 DEG CThe temperature is 450 ℃ below zero, the air pressure ranges from 150mtorr to 200mtorr, and the formed silicon germanium material is Si1-xGexX ranges from 0.5 to 0.8, Si1-xGexThe thickness of (A) is between 0.1 and 3.0 μm. As mentioned above, Plasma Enhanced Chemical Vapor Deposition (PECVD) may also be used to deposit silicon germanium, but LPCVD is preferred, which is compatible with subsequent processing and simplifies the process.
It should be noted that the temperature for forming an alloy between the upper metal layer 112, for example, aluminum metal and the pressure sensing layer 30, for example, silicon germanium, is around 420 ℃, and since the deposition temperature of silicon germanium is around the temperature for forming the alloy, the alloy is easily formed at the interface of metal aluminum during the process of depositing silicon germanium, but since the process of forming the alloy is not sufficient, the uniformity of the formed alloy is poor, that is, there are some places that are alloy and some places that are not alloy, so that an uneven interface between the alloy and metal aluminum is formed at the interface, which results in poor resistance characteristics and affects contact performance.
Next, in step S14, referring to fig. 5, a photoresist layer of photoresist material is formed on the pressure-sensitive layer 30, and then openings are formed in the photoresist layer by photolithography. Specifically, a spin-on photoresist with a thickness of, for example, 0.1 μm to 3.0 μm may be used, and the patterned photoresist, i.e., the mask layer 600, may be formed by performing exposure, development, and the like.
Next, in step S15, referring to fig. 6, the pressure-sensitive layer is etched to form the first opening 310 by using a plasma etching process under the protection of the mask layer, and the first opening 310 exposes the sacrificial layer 20. The specific etching process uses the patterned photoresist, i.e. the mask layer 600, as a mask to etch the pressure-sensitive layer, in this embodiment, CF is used4And (4) plasma etching. And, CF4And the ion energy is higher, and the mask layer is etched at the same time to remove part of the mask layer.
Next, step 16 is executed, referring to fig. 7, the mask layer is removed by using an ashing process, and the specific ashing process, time: 20-30S/temperature: 170 ℃ to 300 ℃/power: 1000W-2000W/oxygen: flow rates 1510SCCM to 3000SCCM, for example, in the present embodiment, time: 30S/temperature: 270 ℃/power: 1500W/oxygen: flow rate 2510 sccm. In the first ashing step, the inventors have studied and found that a polymer is generated, which is accumulated on the surface of the pressure-sensitive layer and, if not removed, affects the electrical characteristics of the pressure sensor
Next, step 17 is executed, referring to step 8, to perform wet cleaning on the etched pressure sensing layer.
Specifically, the pressure-sensitive layer after etching may be cleaned by using a cleaning solution for removing the photoresist after the photolithography.
Finally, step S18 is performed, and referring to fig. 9, the sacrificial layer is removed through the opening by a second ashing process. The process parameters of the second ashing process are as follows: time: 100S-150S/temperature: 170 ℃ to 300 ℃/power: 1000W-2000W/oxygen flow: 1510 SCCM-3000 SCCM/H2N2 flow: 140 SCCM-300 SCCM/CF4 flow: 3SCCM to 8 SCCM. Specifically, in this embodiment, the time may be: 150S/temperature: 270 ℃/power: 1500W/oxygen flow: 2510SCCM/H2N2 flow: 240SCCM/CF4 flow: 5 SCCM. The cavity 320 is formed between the pressure-sensitive layer 300 and the bottom contact electrode 122. The method of removing the sacrificial layer 200 is an ashing process, in which amorphous carbon is etched by using oxygen plasma, and the amorphous carbon and oxygen generate carbon dioxide gas, which is volatilized from the first opening 310.
This may be followed by the step of forming a protective layer having an opening over the pressure sensitive layer.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (5)
1. A method of making a pressure sensor, comprising:
providing a semiconductor substrate, wherein an interconnection structure and a bottom contact electrode are formed in the semiconductor substrate;
forming a sacrificial layer covering the bottom contact electrode;
forming a pressure sensing layer, wherein the pressure sensing layer covers the sacrificial layer, the upper metal layer of the interconnection structure and the surface of the residual semiconductor substrate, the pressure sensing layer comprises a top wall, a bottom wall and a side wall, the top wall is positioned on the sacrificial layer, the side wall surrounds the sacrificial layer, and the bottom wall is positioned on the upper metal layer of the interconnection structure;
forming a mask layer on the pressure induction layer, wherein the mask layer is a patterned photoresist;
using CF4Etching the pressure induction layer by plasma, forming an opening exposing the sacrificial layer in the area which is not protected by the mask layer on the top wall of the pressure induction layer, and utilizing the CF4Etching the mask layer by plasma simultaneously so as to remove part of the mask layer while forming the opening;
removing the mask layer by using a first ashing process, wherein the first ashing process generates polymers accumulated on the surface of the pressure sensing layer;
carrying out wet cleaning on the etched pressure induction layer to remove the polymer;
removing the sacrificial layer through the opening using a second ashing process to form a cavity between the pressure sensing layer and the bottom contact electrode.
2. The method for manufacturing a pressure sensor according to claim 1, wherein the first ashing process comprises the following process parameters: 20-30S/temperature: 170 ℃ to 300 ℃/power: 1000W-2000W/oxygen: the flow 1510 SCCM-3000 SCCM.
3. The method for manufacturing a pressure sensor according to claim 2, wherein the process parameters of the second ashing process are: 100S-150S/temperature: 170 ℃ to 300 ℃/power: 1000W-2000W/oxygen flow: 1510 SCCM-3000 SCCM/H2N2 flow: 140 SCCM-300 SCCM/CF4 flow: 3SCCM to 8 SCCM.
4. The method for manufacturing the pressure sensor according to claim 1, wherein the wet cleaning is performed by using a wet process chemical solution ST-44 for 90-150 minutes.
5. The method of claim 1, wherein the sacrificial layer is made of amorphous carbon, and the sacrificial layer is formed by a plasma enhanced chemical vapor deposition process at a temperature of 400 ℃ to 500 ℃.
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