CN105984841B - Method for producing a porous structure in a layer structure of a semiconductor component and MEMS component having said porous structure element - Google Patents
Method for producing a porous structure in a layer structure of a semiconductor component and MEMS component having said porous structure element Download PDFInfo
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- CN105984841B CN105984841B CN201610153341.1A CN201610153341A CN105984841B CN 105984841 B CN105984841 B CN 105984841B CN 201610153341 A CN201610153341 A CN 201610153341A CN 105984841 B CN105984841 B CN 105984841B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000000576 coating method Methods 0.000 claims abstract description 22
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 14
- 239000002612 dispersion medium Substances 0.000 claims abstract description 11
- 239000000084 colloidal system Substances 0.000 claims abstract description 7
- 238000005538 encapsulation Methods 0.000 claims abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 239000012528 membrane Substances 0.000 claims description 19
- 229910052681 coesite Inorganic materials 0.000 claims description 13
- 229910052906 cristobalite Inorganic materials 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 229910052682 stishovite Inorganic materials 0.000 claims description 13
- 229910052905 tridymite Inorganic materials 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000000725 suspension Substances 0.000 claims description 6
- 239000011148 porous material Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000000839 emulsion Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000000375 suspending agent Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 39
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 229910052593 corundum Inorganic materials 0.000 description 10
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- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 4
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- 239000010703 silicon Substances 0.000 description 2
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- -1 Al2O3 Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 238000000231 atomic layer deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/006—Interconnection of transducer parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
Abstract
A method for producing a porous structure in a layer structure of a semiconductor component and a MEMS component having the porous structure element. The invention proposes a possibility for realizing extremely light, mechanically rigid and thermally insulating structural elements in the layer structure of a semiconductor component, which can be realized without high-temperature process steps. For this purpose, a template (20) is first produced in the surface region of the layer structure (100) by applying at least one colloid to a dispersion medium and subsequently removing the dispersion medium. The individual colloidal particles (21) are arranged in the template (20) themselves. Then, at least one coating material (23) is deposited in the region of the template (20). The individual colloidal particles (21) are at least partially encapsulated with the coating material (23). Subsequently, the colloidal material (21) is removed, so that only a continuous encapsulation of coating material (23) remains in the region of the template (20).
Description
Technical Field
The invention relates to a method for producing a porous structure in a layer structure of a semiconductor component and to a MEMS component having at least one porous structure element.
Background
The overall functionality of the semiconductor component is generally obtained by the joint action of a plurality of electrical and possibly mechanical functions which are realized in different layer regions and chip regions of the component. For this purpose, layer regions and chip regions having different defined electrical and mechanical properties are realized in a targeted manner in the context of the production process.
One particular challenge in the production is to configure the process flow in such a way that the electrical and mechanical properties of the functional elements already produced in the layer structure are not adversely affected by the subsequent process steps. For example, high temperature process steps affect the electrical characteristics of the integrated circuit elements, which may impair the functionality of the integrated circuit elements.
Disclosure of Invention
The invention provides a possibility for realizing extremely light, mechanically inflexible and thermally isolated structural elements in the layer structure of a semiconductor component, which can be realized without high-temperature process steps.
According to the invention, a Template (Template) consisting of microparticles or nanoparticles is first produced in the surface region of the layer structure. For this purpose, at least one colloid is applied in the dispersion medium. Subsequently, the dispersion medium was taken out. The individual colloidal particles themselves are arranged in the form of a three-dimensional colloidal crystal as a template. Then, at least one coating material is deposited in the region of the template. In this case, the individual particles of the template, i.e. the colloidal particles, are completely or partially encapsulated with the coating material. Subsequently, the colloidal material is removed by a suitable etching process or decomposition process (zersetzungsprozoss), so that only the molded continuous envelope of coating material remains in the region of the template.
Depending on the thickness of the initial template, the final formation of coating material is relatively inflexible and porous, similar to an aerosol. The high porosity results in the formation being very light and having a very low thermal conductivity. Accordingly, the formation can advantageously be used for the thermal isolation of the individual regions or functional elements of the semiconductor component.
According to one aspect of the invention, it was recognized that the entire series of materials typically used in chip manufacture can simply be placed in the dosage form (Darreichungsform) or consistency of a colloid in a dispersion medium. On the other hand, it was recognized that materials in the gel phase can also be used in the processing of semiconductor components. In this case, colloidal emulsions and suspensions and also droplets or particles are preferred as dispersion media in the gas. These materials enable material coating, for example spin coating (spinning), by means of low-temperature standard methods. The individual surface regions for the material application can be structured in this case, for example, simply by means of a shadow mask. The dispersion medium can be removed from the template after the coating by a suitable drying process, for example by a suitable heat treatment or vacuum loading (Vakuumbeaufschlagung). Due to the attractive forces between the individual colloidal particles, they are arranged as colloidal crystals in a single-layer grid or a multi-layer grid of the same shape, which according to the invention is used as a template or carrier structure for the coating material. The coating material remains in the layer structure of the semiconductor component as a continuous structural element. In contrast to this, the colloidal material according to the invention acts as a sacrificial material, the geometry of which determines the pore size and pore arrangement of the final structural element composed of coating material and which is precipitated out of the layer structure again after the coating process.
For the production of the template, for example, a colloidal polymer suspension can be used, as is also used in other technical fields, for example in the production of polymer fibers. The polymer material can then be decomposed thermally after the coating process or be extracted from the structural element by means of an oxygen plasma.
It is particularly advantageous to use a colloidal SiO2 suspension for template generation, since SiO2 has been used as a sacrificial layer material in many methods of chip fabrication. To extract the SiO2 colloidal material, the same etching process as in the SiO2 sacrificial layer etching may be used. Particularly suitable for this is an HF gas phase etching process.
A metal oxide, such as Al2O3, is particularly suitable as a coating material, which is suitably deposited on the surface of the layer structure by the A L D (atomic layer deposition) method or by means of CVD (chemical vapor deposition) method and into the gaps, in this case, in the case of a multi-layer template, the coating material also penetrates forward into the gaps between the individual colloidal particles of the layers lying below, Al2O3 has the significant advantage that the material is not attacked neither by oxygen plasma nor by HF gas (angleifen), since Al2O3 relates to electrically insulating materials, the resulting highly porous structure is advantageously used for electrically decoupling partial regions of the chip structure and in particular also as a carrier for the electrode arrangement.
In the context of an ASIC component, the electrical properties of the component produced by means of the method according to the invention primarily play an important role. The electrical properties are significantly dependent on the material used for the coating of the template. Thus, instead of an electrically insulating material, such as Al2O3, an electrically conductive material can of course also be used, if it is inert with respect to the process of removing the colloidal material.
In the context of MEMS components, it is also possible to use the special mechanical properties of the structural elements produced by the method according to the invention. The application possibilities are various here. Thus, highly porous structural elements can be used as sensors for gases, flow or flow
Is used to thermally isolate the load bearing portion of the sensor resistor. The fixed counter electrode of a capacitive pressure sensor or microphone can also be realized in the form of a highly porous structural element produced according to the invention, since the counter electrode has a relatively high rigidity depending on the thickness. Furthermore, the porosity of the counter element ensures a slow pressure equalization between the two sides of the counter element, which counteracts distortions of the microphone signal due to fluctuations of the ambient pressure.
Drawings
As already discussed previously, there are a number of possibilities to configure and extend the teaching of the present invention in an advantageous manner. For this purpose, reference is made, on the one hand, to the dependent claims and, on the other hand, to the following description of embodiments of the invention.
Fig. 1a to 1d illustrate the method according to the invention by way of example for the production of a capacitive MEMS microphone component.
The figures each show a sectional view of the structure 100 in successive manufacturing stages.
Detailed Description
In the exemplary embodiment described here, the microphone structure of the MEMS microphone component is realized in a layer structure on the base substrate 1. Here, for example, a silicon substrate 1 may be mentioned.
In a first process step, the substrate surface is provided with a silicon oxide layer 2. The silicon oxide layer 2 serves on the one hand as an etch stop for the back-side etching process, wherein the base substrate 1 is completely removed in a defined region, i.e. the membrane region, in order to expose the microphone membrane 10 on the back side. On the other hand, the silicon oxide layer 2 serves as electrical insulation between the base substrate 1 and the polysilicon layer 3 applied to the silicon oxide layer 2. In a subsequent process step, a microphone diaphragm 10 is realized in the polysilicon layer 3, which also serves as a diaphragm electrode of the microphone capacitor.
However, before this, a thick silicon oxide layer 4 is first applied to the polysilicon layer 3, which serves as a sacrificial layer 4 and whose thickness defines the distance between the microphone membrane 10 and the fixed counter-element 11. The counter element 11 serves as a carrier for a fixed counter electrode 12 of the microphone capacitor. The counter electrode 12 is embodied here in the form of a structured polysilicon electrode in the surface of the sacrificial layer 4. The counter electrode is constructed in the area above the microphone diaphragm 3.
In a next process step, a further polysilicon layer 5 is applied to the layer structure 100 and is open in the membrane region.
Fig. 1a shows the layer structure 100 after the template 20 has been produced in the open area of the polysilicon layer 5. A template 20 is arranged on the sacrificial layer 4 above the structured polysilicon electrode 12 and extends here over the entire membrane area. The template consists of a grid-like arrangement of colloidal particles 21, which are composed of silicon oxide.
To produce the template 20, a colloidal suspension of microscale or nanoscale SiO2 spheres 21 is applied to the surface of the layer structure 100 in a spin-coating process using a shadow mask. During the subsequent drying process, in which the liquid dispersion medium is evaporated, the attractive forces acting between the SiO2 spheres 21 cause a regular grid-like arrangement of the SiO2 spheres 21.
Since the template 20 thus produced should define the acoustically transparent fixed counter element 11 in terms of its thickness and planar extension, it is also provided with through openings 22 in the embodiment described here in a subsequent structuring step. Fig. 1b shows that the through-openings 22 correspond to the structure of the counter electrode 12.
The material 23 is applied to the layer structure only in a subsequent process step, from which the counter element 11 is to be composed, the template 20 serves here as the inner shape of the hole for the counter element 11, Al2O3 serves here as the material 23 for the counter element 11, in the a L D method, said material is deposited in the region of the template 20, here, not only the SiO2 spheres 21 of the uppermost layer of the template 20 but also the SiO2 spheres 21 in the layer below are coated with a thin Al2O3 film 23, which is shown in fig. 1 c.
The continuous Al2O3 formation 23 thus produced is then exposed, by first precipitating the SiO2 colloidal material 21 from the pores and then also removing the SiO2 sacrificial layer 4 in the membrane region. Advantageously, the precipitation and removal of the SiO2 material is achieved during HF vapor etching. In this case, neither the Al2O 323 of the counter element 11 nor the silicon of the counter electrode 12 and of the microphone diaphragm 10 is attacked. Furthermore, the Al2O3 formation 23 deposited on the template 20 is permeable to gaseous HF, so that the sacrificial layer material 4 is also attacked completely planar, i.e. through the holes in the Al2O3 formation 23, after the removal of the colloidal material 21. Fig. 1d shows that the HF etch attack is continued until the membrane 10 in the polysilicon layer 3 is also exposed.
The microphone structure of the microphone component 100 shown here therefore comprises a microphone membrane 10 made of polysilicon, which spans the opening 13 in the rear side of the component, and an acoustically transparent, fixed counter-element 11 with a through-opening 22, which acts as a carrier for the counter-electrode 12. In the layer structure, the counter element 11 is formed above the microphone membrane 11 and at a distance therefrom. The counter electrode 12 is arranged on the lower side of the counter element 11 facing the microphone membrane 10. According to the invention, the counter element 11 is realized in the form of a highly porous, but mechanically rigid, sound-permeable formation made of Al2O 3. The porosity of the counter element 11 enables a slow pressure equalization between the two sides of the counter element 11. In this way the influence of the ambient pressure on the microphone signal can be significantly reduced.
In an alternative embodiment, continuous Al2O3 formation 23 can also be applied to a freely supported diaphragm structure formed by counter electrode 12.
Claims (13)
1. A method for producing a porous structure in a layer structure of a semiconductor component, the layer structure (100) comprising a polysilicon layer (3) and a sacrificial layer (4) arranged on the polysilicon layer (3), a microphone membrane (10) being implementable in the polysilicon layer (3), a counter electrode (12) being implementable in a surface of the sacrificial layer (4), the method comprising the method steps of:
producing a template (20) in a surface region of a sacrificial layer (4) of the layer structure (100) by applying at least one colloid in a dispersion medium and subsequently removing the dispersion medium, wherein the individual colloid particles (21) are themselves arranged in the template (20), the template (20) being provided with through openings (22) which correspond to the structure of the counter electrode (12),
depositing at least one coating material (23) in the region of the template (20), wherein the individual colloidal particles (21) are at least partially encapsulated with the coating material (23),
the colloid particles (21) are removed, so that only a continuous encapsulation of coating material (23) remains in the region of the template (20), which continuous encapsulation forms a counter element, and then the sacrificial layer (4) in the membrane region of the microphone membrane (10) is also removed via the through-openings until the microphone membrane (10) in the polycrystalline silicon layer (3) is exposed, wherein the counter element here serves as a carrier for the counter electrode (12).
2. Method according to claim 1, wherein a colloid is used in a liquid or gaseous dispersion medium for producing the template (20).
3. The method of any one of claims 1 or 2, wherein the template is generated using a colloidal polymer suspension.
4. Method according to any of claims 1 or 2, wherein colloidal SiO is used2Suspending agent to produce the template (20) and/or the sacrificial layer (4) is SiO2A sacrificial layer.
5. The method according to any one of claims 1 or 2, wherein Al is used2O3As a coating material (23).
6. Method according to any one of claims 1 or 2, wherein the colloidal particles (21) and/or the sacrificial layer (4) are removed by means of HF gas phase etching or by means of oxygen plasma.
7. Method according to claim 2, wherein a colloidal emulsion or suspension is used in a gas for generating the template (20).
8. Method according to claim 2, wherein for generating the template (20) colloidal droplets are used in a gas.
9. Method according to claim 2, wherein colloidal particles are used in a gas for generating the template (20).
10. MEMS component, the micromechanical structure of which is realized in a layer structure, characterized by at least one porous structural element (11) which is produced in a method according to one of claims 1 to 9, wherein the structural element (11) has pores in at least one continuous region, which pores are at least partially encapsulated by a coating material (23).
11. The MEMS component according to claim 10, wherein the porous structural element (11) relates to a free-standing membrane structure.
12. The MEMS component according to claim 10, wherein the at least one continuous region of the structural element is applied to a free-standing membrane structure.
13. MEMS element according to one of claims 10 to 12, wherein the MEMS element has a microphone structure comprising an acoustically sensitive microphone membrane (10) and an acoustically transparent counter element spaced apart from the microphone membrane, and wherein the microphone membrane (10) and the counter element act as a carrier for electrodes of a microphone capacitor device, characterized in that the counter element is realized as a porous structural element, the porosity of which enables a slow pressure equalization between two sides of the counter element.
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| Application Number | Priority Date | Filing Date | Title |
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| DE102015204886.1A DE102015204886A1 (en) | 2015-03-18 | 2015-03-18 | A method for producing a porous structure in the layer structure of a semiconductor device and MEMS device with such a porous structural element |
| DE102015204886.1 | 2015-03-18 |
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| CN105984841B true CN105984841B (en) | 2020-08-04 |
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| CN112967980B (en) * | 2020-08-13 | 2021-12-24 | 重庆康佳光电技术研究院有限公司 | Chip transfer assembly, manufacturing method thereof and chip transfer method |
| CN115057406A (en) * | 2022-04-15 | 2022-09-16 | 山东大学 | MEMS vacuum gauge based on snake-shaped porous silicon heat insulation layer and preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1487108A (en) * | 2003-07-28 | 2004-04-07 | �Ϻ���ͨ��ѧ | Ordered 2D and 3D nano structure metal material comprising hollow metal spheres and its prepn process |
| CN101427593A (en) * | 2006-03-30 | 2009-05-06 | 普尔斯门斯公司 | Single die MEMS acoustic transducer and manufacturing method |
| CN102590308A (en) * | 2012-02-03 | 2012-07-18 | 游学秋 | Porous biosensor and making and application methods |
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| US20060008098A1 (en) * | 2004-07-07 | 2006-01-12 | Tu Xiang Z | Single crystal silicon micromachined capacitive microphone |
| US20150060955A1 (en) * | 2013-09-03 | 2015-03-05 | Windtop Technology Corp. | Integrated mems microphone with mechanical electrical isolation |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1487108A (en) * | 2003-07-28 | 2004-04-07 | �Ϻ���ͨ��ѧ | Ordered 2D and 3D nano structure metal material comprising hollow metal spheres and its prepn process |
| CN101427593A (en) * | 2006-03-30 | 2009-05-06 | 普尔斯门斯公司 | Single die MEMS acoustic transducer and manufacturing method |
| CN102590308A (en) * | 2012-02-03 | 2012-07-18 | 游学秋 | Porous biosensor and making and application methods |
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| CN105984841A (en) | 2016-10-05 |
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