SG10201805185SA - Electrostatic Attraction Method - Google Patents
Electrostatic Attraction MethodInfo
- Publication number
- SG10201805185SA SG10201805185SA SG10201805185SA SG10201805185SA SG10201805185SA SG 10201805185S A SG10201805185S A SG 10201805185SA SG 10201805185S A SG10201805185S A SG 10201805185SA SG 10201805185S A SG10201805185S A SG 10201805185SA SG 10201805185S A SG10201805185S A SG 10201805185SA
- Authority
- SG
- Singapore
- Prior art keywords
- electrostatic attraction
- attraction method
- voltage
- target object
- processing target
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017119043A JP6851270B2 (ja) | 2017-06-16 | 2017-06-16 | 静電吸着方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201805185SA true SG10201805185SA (en) | 2019-01-30 |
Family
ID=64657532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201805185SA SG10201805185SA (en) | 2017-06-16 | 2018-06-18 | Electrostatic Attraction Method |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10832930B2 (ja) |
| JP (1) | JP6851270B2 (ja) |
| KR (1) | KR102496144B1 (ja) |
| CN (1) | CN109148349B (ja) |
| SG (1) | SG10201805185SA (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017129171A1 (de) * | 2016-01-29 | 2017-08-03 | Jenoptik Optical Systems Gmbh | Verfahren und vorrichtung zum herauslösen eines mikro-chips aus einem wafer und aufbringen des mikro-chips auf ein substrat |
| WO2023171195A1 (ja) * | 2022-03-08 | 2023-09-14 | 東京エレクトロン株式会社 | 伝熱ガスのリーク量低減方法及びプラズマ処理装置 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6336138A (ja) | 1986-07-30 | 1988-02-16 | Yukio Yasuda | 表面状態の解析方法とその装置 |
| JP2779950B2 (ja) * | 1989-04-25 | 1998-07-23 | 東陶機器株式会社 | 静電チャックの電圧印加方法および電圧印加装置 |
| JP3269678B2 (ja) * | 1992-11-30 | 2002-03-25 | 株式会社東芝 | 静電チャック装置および静電チャック方法 |
| KR100319468B1 (ko) * | 1995-06-30 | 2002-04-22 | 히가시 데쓰로 | 플라즈마 처리 방법 |
| JP2879887B2 (ja) * | 1995-08-24 | 1999-04-05 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| CN1178392A (zh) * | 1996-09-19 | 1998-04-08 | 株式会社日立制作所 | 静电吸盘和应用了静电吸盘的样品处理方法及装置 |
| US6185085B1 (en) * | 1998-12-02 | 2001-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | System for transporting and electrostatically chucking a semiconductor wafer or the like |
| US6898064B1 (en) * | 2001-08-29 | 2005-05-24 | Lsi Logic Corporation | System and method for optimizing the electrostatic removal of a workpiece from a chuck |
| CN100418187C (zh) * | 2003-02-07 | 2008-09-10 | 东京毅力科创株式会社 | 等离子体处理装置、环形部件和等离子体处理方法 |
| TWI223719B (en) | 2003-05-30 | 2004-11-11 | Ind Tech Res Inst | Sub-micrometer-resolution optical coherent tomography |
| JP2005051098A (ja) * | 2003-07-30 | 2005-02-24 | Sony Corp | プラズマ処理装置及びプラズマ処理方法 |
| USD587222S1 (en) * | 2006-08-01 | 2009-02-24 | Tokyo Electron Limited | Attracting plate of an electrostatic chuck for semiconductor manufacturing |
| JP2010040822A (ja) * | 2008-08-06 | 2010-02-18 | Tokyo Electron Ltd | 静電吸着装置の除電処理方法、基板処理装置、及び記憶媒体 |
| US20100184290A1 (en) * | 2009-01-16 | 2010-07-22 | Applied Materials, Inc. | Substrate support with gas introduction openings |
| JP6013740B2 (ja) * | 2012-02-03 | 2016-10-25 | 東京エレクトロン株式会社 | 離脱制御方法及びプラズマ処理装置の制御装置 |
| JP5976377B2 (ja) * | 2012-04-25 | 2016-08-23 | 東京エレクトロン株式会社 | 被処理基体に対する微粒子付着の制御方法、及び、処理装置 |
| JP2015053384A (ja) * | 2013-09-06 | 2015-03-19 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP6224428B2 (ja) * | 2013-11-19 | 2017-11-01 | 東京エレクトロン株式会社 | 載置台にフォーカスリングを吸着する方法 |
| JP6346855B2 (ja) * | 2014-12-25 | 2018-06-20 | 東京エレクトロン株式会社 | 静電吸着方法及び基板処理装置 |
| JP6496579B2 (ja) * | 2015-03-17 | 2019-04-03 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP6948822B2 (ja) * | 2017-04-25 | 2021-10-13 | 東京エレクトロン株式会社 | 基板処理装置及び基板取り外し方法 |
-
2017
- 2017-06-16 JP JP2017119043A patent/JP6851270B2/ja active Active
-
2018
- 2018-06-15 KR KR1020180068976A patent/KR102496144B1/ko active IP Right Grant
- 2018-06-15 US US16/009,759 patent/US10832930B2/en active Active
- 2018-06-15 CN CN201810618819.2A patent/CN109148349B/zh active Active
- 2018-06-18 SG SG10201805185SA patent/SG10201805185SA/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US10832930B2 (en) | 2020-11-10 |
| JP2019004086A (ja) | 2019-01-10 |
| KR102496144B1 (ko) | 2023-02-03 |
| JP6851270B2 (ja) | 2021-03-31 |
| US20180366360A1 (en) | 2018-12-20 |
| CN109148349A (zh) | 2019-01-04 |
| KR20180137423A (ko) | 2018-12-27 |
| CN109148349B (zh) | 2023-05-16 |
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