SG10201801157PA - Photomask Blank - Google Patents

Photomask Blank

Info

Publication number
SG10201801157PA
SG10201801157PA SG10201801157PA SG10201801157PA SG10201801157PA SG 10201801157P A SG10201801157P A SG 10201801157PA SG 10201801157P A SG10201801157P A SG 10201801157PA SG 10201801157P A SG10201801157P A SG 10201801157PA SG 10201801157P A SG10201801157P A SG 10201801157PA
Authority
SG
Singapore
Prior art keywords
film
dry etching
photomask blank
base dry
etching
Prior art date
Application number
SG10201801157PA
Other languages
English (en)
Inventor
Souichi Fukaya
Yukio Inazuki
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201801157PA publication Critical patent/SG10201801157PA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
SG10201801157PA 2017-03-10 2018-02-12 Photomask Blank SG10201801157PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017046031A JP6780550B2 (ja) 2017-03-10 2017-03-10 フォトマスクブランク

Publications (1)

Publication Number Publication Date
SG10201801157PA true SG10201801157PA (en) 2018-10-30

Family

ID=61223825

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201801157PA SG10201801157PA (en) 2017-03-10 2018-02-12 Photomask Blank

Country Status (7)

Country Link
US (1) US10712654B2 (fr)
EP (1) EP3373067B1 (fr)
JP (1) JP6780550B2 (fr)
KR (2) KR102249017B1 (fr)
CN (1) CN108572509B (fr)
SG (1) SG10201801157PA (fr)
TW (2) TWI794957B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6642493B2 (ja) * 2017-03-10 2020-02-05 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク
US10739671B2 (en) 2017-11-10 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing phase shift photo masks
JP6988697B2 (ja) * 2018-05-31 2022-01-05 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク
WO2020032206A1 (fr) 2018-08-10 2020-02-13 ローム株式会社 DISPOSITIF À SEMI-CONDUCTEUR AU SiC
WO2020138855A1 (fr) * 2018-12-26 2020-07-02 주식회사 에스앤에스텍 Masque vierge et photomasque
US11619875B2 (en) * 2020-06-29 2023-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
JP7331793B2 (ja) * 2020-06-30 2023-08-23 信越化学工業株式会社 フォトマスクの製造方法及びフォトマスクブランク
JP7370943B2 (ja) * 2020-07-15 2023-10-30 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
JPS6385553A (ja) 1986-09-30 1988-04-16 Toshiba Corp マスク基板およびマスクパタ−ンの形成方法
KR950001750B1 (en) * 1992-03-13 1995-02-28 Samsung Electronics Co Ltd Phase shift mask and manufacturing method thereof
JP3064769B2 (ja) 1992-11-21 2000-07-12 アルバック成膜株式会社 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
JP2003195483A (ja) 2001-12-28 2003-07-09 Hoya Corp フォトマスクブランク、フォトマスク、及びそれらの製造方法
JP2003195479A (ja) 2001-12-28 2003-07-09 Hoya Corp ハーフトーン型位相シフトマスクブランク、及びハーフトーン型位相シフトマスクの製造方法
JP3093632U (ja) 2002-03-01 2003-05-16 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク
JP4509050B2 (ja) * 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP5348866B2 (ja) * 2007-09-14 2013-11-20 Ｈｏｙａ株式会社 マスクの製造方法
JP5323526B2 (ja) * 2008-04-02 2013-10-23 Ｈｏｙａ株式会社 位相シフトマスクブランク及び位相シフトマスクの製造方法
JP5510947B2 (ja) * 2008-09-19 2014-06-04 Ｈｏｙａ株式会社 フォトマスクの製造方法およびフォトマスク
WO2010113475A1 (fr) * 2009-03-31 2010-10-07 Hoya株式会社 Ébauche de masque et masque de transfert
JP5541266B2 (ja) * 2011-11-18 2014-07-09 信越化学工業株式会社 パターン形成膜のエッチング条件の評価方法
JP5541265B2 (ja) * 2011-11-18 2014-07-09 信越化学工業株式会社 エッチングマスク膜の評価方法
JP5795991B2 (ja) * 2012-05-16 2015-10-14 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法、および位相シフトマスクの製造方法
KR101759046B1 (ko) * 2014-03-18 2017-07-17 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법
JP6150299B2 (ja) * 2014-03-30 2017-06-21 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
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JP6287932B2 (ja) * 2015-03-31 2018-03-07 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランクの製造方法
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JP6642493B2 (ja) * 2017-03-10 2020-02-05 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク

Also Published As

Publication number Publication date
EP3373067A1 (fr) 2018-09-12
JP6780550B2 (ja) 2020-11-04
KR20210042878A (ko) 2021-04-20
KR102249017B1 (ko) 2021-05-07
CN108572509A (zh) 2018-09-25
CN108572509B (zh) 2023-12-19
KR102260135B1 (ko) 2021-06-04
TWI794957B (zh) 2023-03-01
EP3373067B1 (fr) 2022-04-20
TW202147011A (zh) 2021-12-16
KR20180103718A (ko) 2018-09-19
US10712654B2 (en) 2020-07-14
US20180259843A1 (en) 2018-09-13
TWI742254B (zh) 2021-10-11
TW201843705A (zh) 2018-12-16
JP2018151451A (ja) 2018-09-27

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