SG10201800524XA - Optimized low energy / high productivity deposition system - Google Patents
Optimized low energy / high productivity deposition systemInfo
- Publication number
- SG10201800524XA SG10201800524XA SG10201800524XA SG10201800524XA SG10201800524XA SG 10201800524X A SG10201800524X A SG 10201800524XA SG 10201800524X A SG10201800524X A SG 10201800524XA SG 10201800524X A SG10201800524X A SG 10201800524XA SG 10201800524X A SG10201800524X A SG 10201800524XA
- Authority
- SG
- Singapore
- Prior art keywords
- arm
- low energy
- high productivity
- deposition system
- substrate processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Robotics (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Manipulator (AREA)
- Automation & Control Theory (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762449325P | 2017-01-23 | 2017-01-23 | |
US15/868,347 US11024531B2 (en) | 2017-01-23 | 2018-01-11 | Optimized low energy / high productivity deposition system |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201800524XA true SG10201800524XA (en) | 2018-08-30 |
Family
ID=61131919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201800524XA SG10201800524XA (en) | 2017-01-23 | 2018-01-19 | Optimized low energy / high productivity deposition system |
Country Status (7)
Country | Link |
---|---|
US (2) | US11024531B2 (ko) |
EP (1) | EP3352205B1 (ko) |
JP (3) | JP7394520B2 (ko) |
KR (2) | KR102533126B1 (ko) |
CN (2) | CN114551293A (ko) |
SG (1) | SG10201800524XA (ko) |
TW (3) | TWI741133B (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11024531B2 (en) * | 2017-01-23 | 2021-06-01 | Lam Research Corporation | Optimized low energy / high productivity deposition system |
US10851457B2 (en) | 2017-08-31 | 2020-12-01 | Lam Research Corporation | PECVD deposition system for deposition on selective side of the substrate |
US10796940B2 (en) | 2018-11-05 | 2020-10-06 | Lam Research Corporation | Enhanced automatic wafer centering system and techniques for same |
JP2022527940A (ja) * | 2019-03-29 | 2022-06-07 | ラム リサーチ コーポレーション | インデックス付きマルチステーション処理チャンバにおけるウエハ載置の補正 |
US10998209B2 (en) * | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
US11883958B2 (en) | 2019-06-07 | 2024-01-30 | Applied Materials, Inc. | Robot apparatus including dual end effectors with variable pitch and methods |
CN114207798A (zh) * | 2019-08-08 | 2022-03-18 | 朗姆研究公司 | 多站处理模块中用于晶片传送的主轴组件 |
KR102697639B1 (ko) | 2019-08-16 | 2024-08-22 | 램 리써치 코포레이션 | 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착 |
JP7490412B2 (ja) * | 2020-03-27 | 2024-05-27 | 川崎重工業株式会社 | ロボットシステム及びその制御方法 |
JP2023532277A (ja) * | 2020-06-25 | 2023-07-27 | ラム リサーチ コーポレーション | 裏面処理のためのステーション可変支持フィーチャを備えたマルチステーション処理ツール |
CN112594439B (zh) * | 2020-09-29 | 2022-11-25 | 如皋市蓝鹰齿轮制造有限公司 | 一种便于拆装的多回转型阀门齿轮箱及其安装方法 |
KR102459642B1 (ko) * | 2020-12-21 | 2022-10-27 | 주식회사 테스 | 기판처리장치의 기판이송방법 |
CN114695216A (zh) * | 2020-12-31 | 2022-07-01 | 拓荆科技股份有限公司 | 传送晶圆的方法和机械手臂 |
JP2024519460A (ja) * | 2021-04-27 | 2024-05-14 | ラム リサーチ コーポレーション | ウエハセンタリング機能を備えた回転インデクサ |
KR20230080046A (ko) | 2021-11-29 | 2023-06-07 | 주식회사 원익아이피에스 | 기판처리장치 |
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KR100291971B1 (ko) | 1993-10-26 | 2001-10-24 | 야마자끼 순페이 | 기판처리장치및방법과박막반도체디바이스제조방법 |
JPH11163075A (ja) * | 1997-12-01 | 1999-06-18 | Hitachi Ltd | 半導体装置の製造方法および半導体製造装置 |
JP2000174091A (ja) | 1998-12-01 | 2000-06-23 | Fujitsu Ltd | 搬送装置及び製造装置 |
JP4253107B2 (ja) * | 2000-08-24 | 2009-04-08 | キヤノンアネルバ株式会社 | 基板処理装置及びその増設方法 |
AU2002327249A1 (en) | 2001-07-13 | 2003-01-29 | Brooks Automation, Inc. | Substrate transport apparatus with multiple independent end effectors |
US6949177B2 (en) * | 2001-08-16 | 2005-09-27 | Oriol Inc. | System and method for processing semiconductor wafers using different wafer processes |
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TWI476855B (zh) | 2006-05-03 | 2015-03-11 | Gen Co Ltd | 基板傳輸設備、和使用該設備的高速基板處理系統 |
KR100818044B1 (ko) * | 2006-05-04 | 2008-03-31 | 위순임 | 기판 지지대와 기판 반송 장치 및 이를 이용한 기판 처리시스템 |
US20080175694A1 (en) | 2007-01-19 | 2008-07-24 | Dong-Seok Park | Unit and method for transferring substrates and apparatus and method for treating substrates with the unit |
KR100803559B1 (ko) | 2007-05-02 | 2008-02-15 | 피에스케이 주식회사 | 기판 반송 유닛 및 방법, 그리고 상기 유닛을 가지는 기판처리 장치 및 상기 유닛을 이용한 기판 처리 방법 |
US20080178694A1 (en) * | 2007-01-25 | 2008-07-31 | Barford Lee A | Dynamic environment measurements |
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JP2011199121A (ja) | 2010-03-23 | 2011-10-06 | Ulvac Japan Ltd | 搬送装置 |
CN201901699U (zh) | 2010-09-17 | 2011-07-20 | 中微半导体设备(上海)有限公司 | 自动化基片传输和原位基片测试的mocvd处理系统 |
US9177842B2 (en) | 2011-08-10 | 2015-11-03 | Applied Materials, Inc. | Degassing apparatus adapted to process substrates in multiple tiers with second actuator |
US9202733B2 (en) | 2011-11-07 | 2015-12-01 | Persimmon Technologies Corporation | Robot system with independent arms |
JP6295037B2 (ja) * | 2013-08-08 | 2018-03-14 | 日本電産サンキョー株式会社 | 産業用ロボット |
CN110085535A (zh) | 2013-11-04 | 2019-08-02 | 应用材料公司 | 具有增加的侧面数量的传送腔室、半导体装置制造处理工具和处理方法 |
KR101530024B1 (ko) * | 2013-12-20 | 2015-06-22 | 주식회사 유진테크 | 기판 처리 모듈, 이를 포함하는 기판 처리 장치 및 기판 전달 방법 |
US9916995B2 (en) * | 2014-02-24 | 2018-03-13 | Lam Research Corporation | Compact substrate processing tool with multi-station processing and pre-processing and/or post-processing stations |
JP6271322B2 (ja) * | 2014-03-31 | 2018-01-31 | 東京エレクトロン株式会社 | 基板処理システム |
CN104120389B (zh) | 2014-08-04 | 2016-08-24 | 上海和辉光电有限公司 | 镀膜设备 |
CN104846337A (zh) | 2015-04-30 | 2015-08-19 | 北京欣奕华科技有限公司 | 一种蒸镀设备及蒸镀生产线 |
US11024531B2 (en) * | 2017-01-23 | 2021-06-01 | Lam Research Corporation | Optimized low energy / high productivity deposition system |
-
2018
- 2018-01-11 US US15/868,347 patent/US11024531B2/en active Active
- 2018-01-16 EP EP18151863.0A patent/EP3352205B1/en active Active
- 2018-01-17 KR KR1020180006162A patent/KR102533126B1/ko active IP Right Grant
- 2018-01-19 SG SG10201800524XA patent/SG10201800524XA/en unknown
- 2018-01-19 JP JP2018006824A patent/JP7394520B2/ja active Active
- 2018-01-22 TW TW107102145A patent/TWI741133B/zh active
- 2018-01-22 TW TW112101156A patent/TW202344702A/zh unknown
- 2018-01-22 TW TW110132580A patent/TWI792531B/zh active
- 2018-01-23 CN CN202111660638.4A patent/CN114551293A/zh active Pending
- 2018-01-23 CN CN201810062008.9A patent/CN108374157B/zh active Active
-
2021
- 2021-05-03 US US17/306,226 patent/US20210320029A1/en active Pending
-
2022
- 2022-10-14 JP JP2022165116A patent/JP7440592B2/ja active Active
-
2023
- 2023-05-11 KR KR1020230061030A patent/KR102656329B1/ko active IP Right Grant
-
2024
- 2024-02-15 JP JP2024020731A patent/JP2024056883A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR102533126B1 (ko) | 2023-05-15 |
US11024531B2 (en) | 2021-06-01 |
JP7394520B2 (ja) | 2023-12-08 |
US20180211864A1 (en) | 2018-07-26 |
CN108374157A (zh) | 2018-08-07 |
CN108374157B (zh) | 2022-01-21 |
EP3352205A1 (en) | 2018-07-25 |
JP2024056883A (ja) | 2024-04-23 |
TWI741133B (zh) | 2021-10-01 |
JP2022191406A (ja) | 2022-12-27 |
KR20230073156A (ko) | 2023-05-25 |
TW202344702A (zh) | 2023-11-16 |
KR102656329B1 (ko) | 2024-04-09 |
JP7440592B2 (ja) | 2024-02-28 |
TW202146683A (zh) | 2021-12-16 |
US20210320029A1 (en) | 2021-10-14 |
TWI792531B (zh) | 2023-02-11 |
JP2018139287A (ja) | 2018-09-06 |
KR20180087153A (ko) | 2018-08-01 |
EP3352205B1 (en) | 2021-10-13 |
TW201840880A (zh) | 2018-11-16 |
CN114551293A (zh) | 2022-05-27 |
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