SG10201700452RA - High temperature atomic layer deposition of silicon-containing films - Google Patents
High temperature atomic layer deposition of silicon-containing filmsInfo
- Publication number
- SG10201700452RA SG10201700452RA SG10201700452RA SG10201700452RA SG10201700452RA SG 10201700452R A SG10201700452R A SG 10201700452RA SG 10201700452R A SG10201700452R A SG 10201700452RA SG 10201700452R A SG10201700452R A SG 10201700452RA SG 10201700452R A SG10201700452R A SG 10201700452RA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon
- high temperature
- atomic layer
- layer deposition
- containing films
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662280886P | 2016-01-20 | 2016-01-20 | |
US15/404,376 US10283348B2 (en) | 2016-01-20 | 2017-01-12 | High temperature atomic layer deposition of silicon-containing films |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201700452RA true SG10201700452RA (en) | 2017-08-30 |
Family
ID=57860744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201700452RA SG10201700452RA (en) | 2016-01-20 | 2017-01-19 | High temperature atomic layer deposition of silicon-containing films |
Country Status (7)
Country | Link |
---|---|
US (1) | US10283348B2 (fr) |
EP (1) | EP3196336A1 (fr) |
JP (2) | JP6856388B2 (fr) |
KR (1) | KR102013412B1 (fr) |
CN (2) | CN112899648A (fr) |
SG (1) | SG10201700452RA (fr) |
TW (2) | TWI639723B (fr) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016205196A2 (fr) * | 2015-06-16 | 2016-12-22 | Air Products And Chemicals, Inc. | Composés d'halidosilane et compositions et procédés de dépôt de films contenant du silicium les utilisant |
US9786492B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
KR102378021B1 (ko) * | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
US11591692B2 (en) * | 2017-02-08 | 2023-02-28 | Versum Materials Us, Llc | Organoamino-polysiloxanes for deposition of silicon-containing films |
US10847529B2 (en) | 2017-04-13 | 2020-11-24 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by the same |
US10504901B2 (en) | 2017-04-26 | 2019-12-10 | Asm Ip Holding B.V. | Substrate processing method and device manufactured using the same |
US11158500B2 (en) | 2017-05-05 | 2021-10-26 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of oxygen containing thin films |
US10950454B2 (en) * | 2017-08-04 | 2021-03-16 | Lam Research Corporation | Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method |
US10991573B2 (en) | 2017-12-04 | 2021-04-27 | Asm Ip Holding B.V. | Uniform deposition of SiOC on dielectric and metal surfaces |
WO2019118019A1 (fr) * | 2017-12-12 | 2019-06-20 | Dow Silicones Corporation | Procédé de dépôt d'un film contenant du silicium sur un substrat à l'aide de précurseurs d'organo(halo)siloxane |
US10431695B2 (en) | 2017-12-20 | 2019-10-01 | Micron Technology, Inc. | Transistors comprising at lease one of GaP, GaN, and GaAs |
US10825816B2 (en) | 2017-12-28 | 2020-11-03 | Micron Technology, Inc. | Recessed access devices and DRAM constructions |
US10319586B1 (en) * | 2018-01-02 | 2019-06-11 | Micron Technology, Inc. | Methods comprising an atomic layer deposition sequence |
US10734527B2 (en) | 2018-02-06 | 2020-08-04 | Micron Technology, Inc. | Transistors comprising a pair of source/drain regions having a channel there-between |
US11521849B2 (en) * | 2018-07-20 | 2022-12-06 | Applied Materials, Inc. | In-situ deposition process |
US20200040454A1 (en) * | 2018-08-06 | 2020-02-06 | Lam Research Corporation | Method to increase deposition rate of ald process |
WO2020072874A1 (fr) * | 2018-10-05 | 2020-04-09 | Versum Materials Us, Llc | Dépôt par couche atomique à haute température de films contenant du silicium |
KR102157137B1 (ko) * | 2018-11-30 | 2020-09-17 | 주식회사 한솔케미칼 | 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법 |
JP7227122B2 (ja) | 2019-12-27 | 2023-02-21 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
JP7386732B2 (ja) * | 2020-03-06 | 2023-11-27 | 東京エレクトロン株式会社 | 成膜方法 |
JP7254044B2 (ja) * | 2020-03-25 | 2023-04-07 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
KR102364476B1 (ko) * | 2020-05-08 | 2022-02-18 | 주식회사 한솔케미칼 | 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법 |
KR20230034217A (ko) * | 2020-06-03 | 2023-03-09 | 램 리써치 코포레이션 | 인-피처 (in-feature) 습식 에칭 레이트 비 감소 |
CN116917535A (zh) * | 2021-03-02 | 2023-10-20 | 弗萨姆材料美国有限责任公司 | 硅介电膜的选择性淀积 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3642851A (en) | 1968-12-27 | 1972-02-15 | Union Carbide Corp | Preparation of linear halosiloxanes and compounds derived therefrom |
JP3229419B2 (ja) * | 1993-02-10 | 2001-11-19 | ダウ・コ−ニング・コ−ポレ−ション | 酸化ケイ素膜の形成方法 |
JPH08165294A (ja) | 1994-12-15 | 1996-06-25 | Shin Etsu Chem Co Ltd | 1,3−ジクロロ−1,1,3,3−テトラメチルジシロキサンの製造方法 |
US5989998A (en) * | 1996-08-29 | 1999-11-23 | Matsushita Electric Industrial Co., Ltd. | Method of forming interlayer insulating film |
US6013740A (en) | 1998-08-27 | 2000-01-11 | Dow Corning Corporation | Sheet and tube polymers with pendant siloxane groups |
KR100505668B1 (ko) | 2002-07-08 | 2005-08-03 | 삼성전자주식회사 | 원자층 증착 방법에 의한 실리콘 산화막 형성 방법 |
US7084076B2 (en) * | 2003-02-27 | 2006-08-01 | Samsung Electronics, Co., Ltd. | Method for forming silicon dioxide film using siloxane |
TWI262960B (en) * | 2003-02-27 | 2006-10-01 | Samsung Electronics Co Ltd | Method for forming silicon dioxide film using siloxane |
US7022864B2 (en) * | 2003-07-15 | 2006-04-04 | Advanced Technology Materials, Inc. | Ethyleneoxide-silane and bridged silane precursors for forming low k films |
JP2006060066A (ja) * | 2004-08-20 | 2006-03-02 | Mitsubishi Electric Corp | シリコン酸化膜の成膜方法および成膜装置 |
KR20060019868A (ko) * | 2004-08-30 | 2006-03-06 | 삼성코닝 주식회사 | 이중 유기 실록산 전구체를 이용한 절연막의 제조방법 |
JP5019742B2 (ja) * | 2005-01-31 | 2012-09-05 | 東ソー株式会社 | 環状シロキサン化合物、Si含有膜形成材料、およびその用途 |
JP4341560B2 (ja) * | 2005-01-31 | 2009-10-07 | 東ソー株式会社 | Si含有膜形成材料、Si含有膜、Si含有膜の製法、及び、半導体デバイス |
US8084294B2 (en) * | 2005-02-18 | 2011-12-27 | Nec Corporation | Method of fabricating organic silicon film, semiconductor device including the same, and method of fabricating the semiconductor device |
KR100660890B1 (ko) | 2005-11-16 | 2006-12-26 | 삼성전자주식회사 | Ald를 이용한 이산화실리콘막 형성 방법 |
US7498273B2 (en) | 2006-05-30 | 2009-03-03 | Applied Materials, Inc. | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes |
US8129555B2 (en) * | 2008-08-12 | 2012-03-06 | Air Products And Chemicals, Inc. | Precursors for depositing silicon-containing films and methods for making and using same |
US7935643B2 (en) * | 2009-08-06 | 2011-05-03 | Applied Materials, Inc. | Stress management for tensile films |
JP2011165657A (ja) * | 2010-01-15 | 2011-08-25 | Semiconductor Energy Lab Co Ltd | 蓄電装置 |
US8592294B2 (en) * | 2010-02-22 | 2013-11-26 | Asm International N.V. | High temperature atomic layer deposition of dielectric oxides |
US9460912B2 (en) | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
JP6415808B2 (ja) | 2012-12-13 | 2018-10-31 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
US9796739B2 (en) * | 2013-06-26 | 2017-10-24 | Versum Materials Us, Llc | AZA-polysilane precursors and methods for depositing films comprising same |
US20150275355A1 (en) * | 2014-03-26 | 2015-10-01 | Air Products And Chemicals, Inc. | Compositions and methods for the deposition of silicon oxide films |
JP6545093B2 (ja) * | 2015-12-14 | 2019-07-17 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
-
2017
- 2017-01-12 US US15/404,376 patent/US10283348B2/en active Active
- 2017-01-19 TW TW106101964A patent/TWI639723B/zh active
- 2017-01-19 SG SG10201700452RA patent/SG10201700452RA/en unknown
- 2017-01-19 TW TW107120415A patent/TW202018116A/zh unknown
- 2017-01-20 CN CN202110169653.2A patent/CN112899648A/zh active Pending
- 2017-01-20 EP EP17152346.7A patent/EP3196336A1/fr active Pending
- 2017-01-20 JP JP2017008324A patent/JP6856388B2/ja active Active
- 2017-01-20 KR KR1020170009657A patent/KR102013412B1/ko active IP Right Grant
- 2017-01-20 CN CN201710047967.9A patent/CN106992114B/zh active Active
-
2019
- 2019-06-18 JP JP2019112867A patent/JP7092709B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US20170207082A1 (en) | 2017-07-20 |
JP2019186562A (ja) | 2019-10-24 |
EP3196336A1 (fr) | 2017-07-26 |
JP2017130665A (ja) | 2017-07-27 |
KR20170087425A (ko) | 2017-07-28 |
JP6856388B2 (ja) | 2021-04-07 |
JP7092709B2 (ja) | 2022-06-28 |
TWI639723B (zh) | 2018-11-01 |
TW202018116A (zh) | 2020-05-16 |
CN112899648A (zh) | 2021-06-04 |
US10283348B2 (en) | 2019-05-07 |
TW201736633A (zh) | 2017-10-16 |
CN106992114B (zh) | 2021-02-19 |
CN106992114A (zh) | 2017-07-28 |
KR102013412B1 (ko) | 2019-08-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201700452RA (en) | High temperature atomic layer deposition of silicon-containing films | |
SG11201911413UA (en) | Methods of atomic layer deposition for selective film growth | |
IL261283A (en) | Compositions and methods using them for depositing a silicon-containing layer | |
IL257372B (en) | Organoamino-functional linear and cyclic oligosiloxanes for the deposition of silicon-containing layers | |
EP3204962A4 (fr) | Chambre de dépôt de couche atomique avec couvercle thermique | |
SG10202000545RA (en) | Compositions and methods using same for deposition of silicon-containing films | |
IL260069A (en) | Preparations and methods using them for depositing a silicon-containing layer | |
SG10201600832VA (en) | Conformal deposition of silicon carbide films | |
SG10201502280PA (en) | Compositions and methods for the deposition of silicon oxide films | |
SG10201607590TA (en) | Laser-assisted atomic layer deposition of 2d metal chalcogenide films | |
PL3092322T3 (pl) | Sposób naparowywania próżniowego dla wytwarzania struktur cienkowarstwowych zawierających lit | |
GB2536768B (en) | Underlayers for textured films of Heusler compounds | |
SG11202005302SA (en) | Selective atomic layer deposition of ruthenium | |
IL266186A (en) | Process for the generation of thin silicon-containing films | |
IL249664A0 (en) | A process for creating thin inorganic layers | |
IL247462A0 (en) | Deposition of an atomic layer of germanium or germanium oxide | |
IL250145B (en) | A process for creating thin inorganic layers | |
EP3312137A4 (fr) | Dépôt de couches de graphène par dépôt chimique en phase vapeur assisté par plasma | |
EP3097574A4 (fr) | Production de supercondensateurs améliorés à l'aide du dépôt de couches atomiques d'oxyde métallique sur des nanostructures | |
IL246810A0 (en) | A process for producing thin inorganic layers | |
EP2989229A4 (fr) | Procédés d'application de revêtements par dépôt chimique en phase vapeur photo-amorcé (picvd) et revêtements obtenus par ces procédés | |
SG11202004730PA (en) | Titanium-containing film forming compositions for vapor deposition of titanium-containing films | |
EP3414357A4 (fr) | Appareil de dépôt de couche atomique | |
SG11201704448RA (en) | Method for the wet deposition of thin films | |
EP3307744A4 (fr) | Procédés de dépôt en phase vapeur pour former des films minces contenant de l'oxygène et du silicium |