SG10201607590TA - Laser-assisted atomic layer deposition of 2d metal chalcogenide films - Google Patents

Laser-assisted atomic layer deposition of 2d metal chalcogenide films

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Publication number
SG10201607590TA
SG10201607590TA SG10201607590TA SG10201607590TA SG10201607590TA SG 10201607590T A SG10201607590T A SG 10201607590TA SG 10201607590T A SG10201607590T A SG 10201607590TA SG 10201607590T A SG10201607590T A SG 10201607590TA SG 10201607590T A SG10201607590T A SG 10201607590TA
Authority
SG
Singapore
Prior art keywords
laser
atomic layer
layer deposition
metal chalcogenide
assisted atomic
Prior art date
Application number
SG10201607590TA
Inventor
Sundaram Ganesh
Original Assignee
Ultratech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultratech Inc filed Critical Ultratech Inc
Publication of SG10201607590TA publication Critical patent/SG10201607590TA/en

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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
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