SG10201606891SA - Atomic layer etching of tungsten and other metals - Google Patents
Atomic layer etching of tungsten and other metalsInfo
- Publication number
- SG10201606891SA SG10201606891SA SG10201606891SA SG10201606891SA SG10201606891SA SG 10201606891S A SG10201606891S A SG 10201606891SA SG 10201606891S A SG10201606891S A SG 10201606891SA SG 10201606891S A SG10201606891S A SG 10201606891SA SG 10201606891S A SG10201606891S A SG 10201606891SA
- Authority
- SG
- Singapore
- Prior art keywords
- tungsten
- metals
- atomic layer
- layer etching
- etching
- Prior art date
Links
- 238000005530 etching Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 150000002739 metals Chemical class 0.000 title 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title 1
- 229910052721 tungsten Inorganic materials 0.000 title 1
- 239000010937 tungsten Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
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- H01J37/32082—Radio frequency generated discharge
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/042—Doping, graded, for tapered etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/924—To facilitate selective etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562207250P | 2015-08-19 | 2015-08-19 | |
US15/239,138 US10096487B2 (en) | 2015-08-19 | 2016-08-17 | Atomic layer etching of tungsten and other metals |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201606891SA true SG10201606891SA (en) | 2017-03-30 |
Family
ID=58157593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201606891SA SG10201606891SA (en) | 2015-08-19 | 2016-08-18 | Atomic layer etching of tungsten and other metals |
Country Status (6)
Country | Link |
---|---|
US (1) | US10096487B2 (en) |
JP (1) | JP2017063186A (en) |
KR (2) | KR102663156B1 (en) |
CN (1) | CN106469678A (en) |
SG (1) | SG10201606891SA (en) |
TW (1) | TW201721751A (en) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9806252B2 (en) | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
US9870899B2 (en) | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
US9984858B2 (en) * | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
US10229837B2 (en) | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
KR20170122910A (en) * | 2016-04-27 | 2017-11-07 | 성균관대학교산학협력단 | Atomic layer ething method |
US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
US9837312B1 (en) * | 2016-07-22 | 2017-12-05 | Lam Research Corporation | Atomic layer etching for enhanced bottom-up feature fill |
US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
US20180294168A1 (en) * | 2017-04-11 | 2018-10-11 | Tokyo Electron Limited | Method for anisotropic dry etching of titanium-containing films |
TWI619840B (en) * | 2017-06-30 | 2018-04-01 | 國立交通大學 | Chemical vapor phase growth apparatus |
JP6772117B2 (en) * | 2017-08-23 | 2020-10-21 | 株式会社日立ハイテク | Etching method and etching equipment |
JP7034645B2 (en) * | 2017-09-22 | 2022-03-14 | 株式会社Screenホールディングス | Board processing method and board processing equipment |
US10763083B2 (en) * | 2017-10-06 | 2020-09-01 | Lam Research Corporation | High energy atomic layer etching |
KR102016927B1 (en) * | 2017-11-01 | 2019-10-21 | 한국기초과학지원연구원 | Atomic layer polishing method and device therefor |
US10460988B2 (en) * | 2017-12-21 | 2019-10-29 | Tokyo Electron Limited | Removal method and processing method |
KR102642011B1 (en) * | 2018-03-30 | 2024-02-27 | 램 리써치 코포레이션 | Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials |
US11387111B2 (en) * | 2018-04-13 | 2022-07-12 | Mattson Technology, Inc. | Processing of workpieces with reactive species generated using alkyl halide |
JP7133975B2 (en) * | 2018-05-11 | 2022-09-09 | 東京エレクトロン株式会社 | Etching method and etching apparatus |
US10982335B2 (en) * | 2018-11-15 | 2021-04-20 | Tokyo Electron Limited | Wet atomic layer etching using self-limiting and solubility-limited reactions |
DE102018221188A1 (en) * | 2018-12-07 | 2020-06-10 | Carl Zeiss Smt Gmbh | Process for in situ protection of an aluminum layer and optical arrangement for the VUV wavelength range |
JP2020136602A (en) * | 2019-02-25 | 2020-08-31 | 株式会社Adeka | Etching method |
CN112119485B (en) * | 2019-04-22 | 2024-01-02 | 株式会社日立高新技术 | Plasma processing method |
US20220325418A1 (en) * | 2019-05-15 | 2022-10-13 | Showa Denko K.K. | Metal removal method, dry etching method, and production method for semiconductor element |
US11094598B2 (en) | 2019-07-11 | 2021-08-17 | Globalfoundries U.S. Inc. | Multiple threshold voltage devices |
JP2022542089A (en) * | 2019-07-31 | 2022-09-29 | ラム リサーチ コーポレーション | Chemical etching of non-volatile materials for MRAM patterning |
JP7300945B2 (en) * | 2019-09-13 | 2023-06-30 | 東京エレクトロン株式会社 | Recording medium for recording cleaning method and cleaning program |
WO2021053778A1 (en) * | 2019-09-19 | 2021-03-25 | 株式会社Kokusai Electric | Method for manufacturing semiconductor device, recording medium, and substrate processing device |
CN113140458B (en) * | 2020-01-17 | 2024-03-01 | 中芯国际集成电路制造(上海)有限公司 | Method for forming semiconductor structure |
JP7394665B2 (en) * | 2020-03-11 | 2023-12-08 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
KR102428642B1 (en) * | 2020-06-01 | 2022-08-02 | 인하대학교 산학협력단 | Dry-etching method of copper thin film |
JPWO2021260869A1 (en) * | 2020-06-25 | 2021-12-30 | ||
KR20220022502A (en) | 2020-08-18 | 2022-02-28 | 주식회사 원익아이피에스 | Method and Apparatus for Atomic Layer Etching |
CN116034456A (en) | 2020-09-03 | 2023-04-28 | 应用材料公司 | Selective anisotropic metal etch |
US11915941B2 (en) | 2021-02-11 | 2024-02-27 | Tokyo Electron Limited | Dynamically adjusted purge timing in wet atomic layer etching |
JP2022164060A (en) | 2021-04-15 | 2022-10-27 | 東京エレクトロン株式会社 | Etching method and processor |
US20240047222A1 (en) * | 2021-04-22 | 2024-02-08 | Hitachi High-Tech Corporation | Etching method |
US11802342B2 (en) | 2021-10-19 | 2023-10-31 | Tokyo Electron Limited | Methods for wet atomic layer etching of ruthenium |
US11866831B2 (en) | 2021-11-09 | 2024-01-09 | Tokyo Electron Limited | Methods for wet atomic layer etching of copper |
Family Cites Families (94)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5416280B2 (en) | 1971-12-30 | 1979-06-21 | ||
JPH061769B2 (en) | 1983-08-10 | 1994-01-05 | 株式会社日立製作所 | Alumina film patterning method |
DE4241045C1 (en) | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Process for anisotropic etching of silicon |
JPH06326060A (en) | 1993-05-12 | 1994-11-25 | Hitachi Ltd | Working method of surface of solid |
US5482802A (en) | 1993-11-24 | 1996-01-09 | At&T Corp. | Material removal with focused particle beams |
US6022806A (en) | 1994-03-15 | 2000-02-08 | Kabushiki Kaisha Toshiba | Method of forming a film in recess by vapor phase growth |
US5527425A (en) | 1995-07-21 | 1996-06-18 | At&T Corp. | Method of making in-containing III/V semiconductor devices |
JPH0945670A (en) | 1995-07-29 | 1997-02-14 | Hewlett Packard Co <Hp> | Vapor phase etching method of group iiinitrogen crystal and re-deposition process method |
US5789265A (en) | 1995-08-31 | 1998-08-04 | Kabushiki Kaisha Toshiba | Method of manufacturing blue light-emitting device by using BCL3 and CL2 |
WO1999036956A1 (en) | 1998-01-13 | 1999-07-22 | Applied Materials, Inc. | Etching methods for anisotropic platinum profile |
US6177353B1 (en) | 1998-09-15 | 2001-01-23 | Infineon Technologies North America Corp. | Metallization etching techniques for reducing post-etch corrosion of metal lines |
SE9903213D0 (en) | 1999-06-21 | 1999-09-10 | Carl Fredrik Carlstroem | Dry etching process of compound semiconductor materials |
US8696875B2 (en) | 1999-10-08 | 2014-04-15 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
US6458694B2 (en) | 2000-01-24 | 2002-10-01 | Ebara Corporation | High energy sputtering method for forming interconnects |
JP3662472B2 (en) | 2000-05-09 | 2005-06-22 | エム・エフエスアイ株式会社 | Substrate surface treatment method |
US6527855B2 (en) | 2000-10-10 | 2003-03-04 | Rensselaer Polytechnic Institute | Atomic layer deposition of cobalt from cobalt metallorganic compounds |
US20020058409A1 (en) | 2000-11-16 | 2002-05-16 | Ching-Te Lin | Elimination of overhang in liner/barrier/seed layers using post-deposition sputter etch |
US6448192B1 (en) | 2001-04-16 | 2002-09-10 | Motorola, Inc. | Method for forming a high dielectric constant material |
US6755945B2 (en) | 2001-05-04 | 2004-06-29 | Tokyo Electron Limited | Ionized PVD with sequential deposition and etching |
US7141494B2 (en) | 2001-05-22 | 2006-11-28 | Novellus Systems, Inc. | Method for reducing tungsten film roughness and improving step coverage |
US6635965B1 (en) | 2001-05-22 | 2003-10-21 | Novellus Systems, Inc. | Method for producing ultra-thin tungsten layers with improved step coverage |
US7955972B2 (en) | 2001-05-22 | 2011-06-07 | Novellus Systems, Inc. | Methods for growing low-resistivity tungsten for high aspect ratio and small features |
US7589017B2 (en) | 2001-05-22 | 2009-09-15 | Novellus Systems, Inc. | Methods for growing low-resistivity tungsten film |
US7005372B2 (en) | 2003-01-21 | 2006-02-28 | Novellus Systems, Inc. | Deposition of tungsten nitride |
US20030015704A1 (en) | 2001-07-23 | 2003-01-23 | Motorola, Inc. | Structure and process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same including intermediate surface cleaning |
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
US6884730B2 (en) | 2002-07-02 | 2005-04-26 | Headway Technologies, Inc. | Method of etching a film of magnetic material and method of manufacturing a thin-film magnetic head |
US6933239B2 (en) | 2003-01-13 | 2005-08-23 | Applied Materials, Inc. | Method for removing conductive residue |
US6841484B2 (en) | 2003-04-17 | 2005-01-11 | Chentsau Ying | Method of fabricating a magneto-resistive random access memory (MRAM) device |
JP2004332045A (en) | 2003-05-07 | 2004-11-25 | Renesas Technology Corp | Method for dry-etching multilayered film material |
US6844258B1 (en) | 2003-05-09 | 2005-01-18 | Novellus Systems, Inc. | Selective refractory metal and nitride capping |
US7341946B2 (en) | 2003-11-10 | 2008-03-11 | Novellus Systems, Inc. | Methods for the electrochemical deposition of copper onto a barrier layer of a work piece |
US7115522B2 (en) | 2004-07-09 | 2006-10-03 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device |
US8288828B2 (en) | 2004-09-09 | 2012-10-16 | International Business Machines Corporation | Via contact structure having dual silicide layers |
US7196955B2 (en) | 2005-01-12 | 2007-03-27 | Hewlett-Packard Development Company, L.P. | Hardmasks for providing thermally assisted switching of magnetic memory elements |
JP4860219B2 (en) | 2005-02-14 | 2012-01-25 | 東京エレクトロン株式会社 | Substrate processing method, electronic device manufacturing method, and program |
US7214626B2 (en) | 2005-08-24 | 2007-05-08 | United Microelectronics Corp. | Etching process for decreasing mask defect |
US8257987B2 (en) | 2006-02-02 | 2012-09-04 | Trustees Of Boston University | Planarization of GaN by photoresist technique using an inductively coupled plasma |
US9230818B2 (en) | 2006-02-02 | 2016-01-05 | Trustees Of Boston University | Planarization of GaN by photoresist technique using an inductively coupled plasma |
US7795148B2 (en) | 2006-03-28 | 2010-09-14 | Tokyo Electron Limited | Method for removing damaged dielectric material |
US20070238301A1 (en) | 2006-03-28 | 2007-10-11 | Cabral Stephen H | Batch processing system and method for performing chemical oxide removal |
US7368393B2 (en) | 2006-04-20 | 2008-05-06 | International Business Machines Corporation | Chemical oxide removal of plasma damaged SiCOH low k dielectrics |
US7416989B1 (en) | 2006-06-30 | 2008-08-26 | Novellus Systems, Inc. | Adsorption based material removal process |
KR101330707B1 (en) | 2007-07-19 | 2013-11-19 | 삼성전자주식회사 | Method of forming Semiconducotr Device |
US7772114B2 (en) | 2007-12-05 | 2010-08-10 | Novellus Systems, Inc. | Method for improving uniformity and adhesion of low resistivity tungsten film |
US7829358B2 (en) | 2008-02-08 | 2010-11-09 | Illumitex, Inc. | System and method for emitter layer shaping |
US8247030B2 (en) | 2008-03-07 | 2012-08-21 | Tokyo Electron Limited | Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer |
US7948044B2 (en) | 2008-04-09 | 2011-05-24 | Magic Technologies, Inc. | Low switching current MTJ element for ultra-high STT-RAM and a method for making the same |
US8252194B2 (en) | 2008-05-02 | 2012-08-28 | Micron Technology, Inc. | Methods of removing silicon oxide |
US8058170B2 (en) | 2008-06-12 | 2011-11-15 | Novellus Systems, Inc. | Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics |
US8551885B2 (en) | 2008-08-29 | 2013-10-08 | Novellus Systems, Inc. | Method for reducing tungsten roughness and improving reflectivity |
US8404561B2 (en) | 2009-05-18 | 2013-03-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating an isolation structure |
US8124531B2 (en) | 2009-08-04 | 2012-02-28 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
US9034768B2 (en) | 2010-07-09 | 2015-05-19 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
US8664070B2 (en) | 2009-12-21 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | High temperature gate replacement process |
KR101080604B1 (en) | 2010-02-09 | 2011-11-04 | 성균관대학교산학협력단 | atomic layer etching apparatus and etching method using the same |
US8227344B2 (en) | 2010-02-26 | 2012-07-24 | Tokyo Electron Limited | Hybrid in-situ dry cleaning of oxidized surface layers |
KR101340793B1 (en) * | 2010-07-09 | 2013-12-11 | 노벨러스 시스템즈, 인코포레이티드 | Depositing tungsten into high aspect ratio features |
WO2012023537A1 (en) | 2010-08-19 | 2012-02-23 | 株式会社 アルバック | Dry etching method and method of manufacturing semiconductor device |
WO2012050888A2 (en) | 2010-09-28 | 2012-04-19 | North Carolina State University | Gallium nitride based structures with embedded voids and methods for their fabrication |
US8124505B1 (en) | 2010-10-21 | 2012-02-28 | Hrl Laboratories, Llc | Two stage plasma etching method for enhancement mode GaN HFET |
US8546263B2 (en) | 2011-04-27 | 2013-10-01 | Applied Materials, Inc. | Method of patterning of magnetic tunnel junctions |
US8617411B2 (en) * | 2011-07-20 | 2013-12-31 | Lam Research Corporation | Methods and apparatus for atomic layer etching |
US20130099277A1 (en) | 2011-10-25 | 2013-04-25 | The Regents Of The University Of California | SELECTIVE DRY ETCHING OF N-FACE (Al,In,Ga)N HETEROSTRUCTURES |
US9666414B2 (en) | 2011-10-27 | 2017-05-30 | Applied Materials, Inc. | Process chamber for etching low k and other dielectric films |
US8808561B2 (en) | 2011-11-15 | 2014-08-19 | Lam Research Coporation | Inert-dominant pulsing in plasma processing systems |
US8883028B2 (en) | 2011-12-28 | 2014-11-11 | Lam Research Corporation | Mixed mode pulsing etching in plasma processing systems |
US20130313561A1 (en) | 2012-05-25 | 2013-11-28 | Triquint Semiconductor, Inc. | Group iii-nitride transistor with charge-inducing layer |
JP2014049466A (en) | 2012-08-29 | 2014-03-17 | Tokyo Electron Ltd | Etching processing method and substrate processing apparatus |
JP5918108B2 (en) | 2012-11-16 | 2016-05-18 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
KR20150092172A (en) | 2012-11-16 | 2015-08-12 | 메사추세츠 인스티튜트 오브 테크놀로지 | Semiconductor structure and recess formation etch technique |
FR3000600B1 (en) | 2012-12-28 | 2018-04-20 | Commissariat Energie Atomique | MICROELECTRONIC METHOD FOR ETCHING A LAYER |
US20140335666A1 (en) | 2013-05-13 | 2014-11-13 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics |
US9362163B2 (en) | 2013-07-30 | 2016-06-07 | Lam Research Corporation | Methods and apparatuses for atomic layer cleaning of contacts and vias |
FR3017241B1 (en) | 2014-01-31 | 2017-08-25 | Commissariat Energie Atomique | PLASMA ETCHING PROCESS |
US9257638B2 (en) | 2014-03-27 | 2016-02-09 | Lam Research Corporation | Method to etch non-volatile metal materials |
US9773683B2 (en) | 2014-06-09 | 2017-09-26 | American Air Liquide, Inc. | Atomic layer or cyclic plasma etching chemistries and processes |
US9768033B2 (en) | 2014-07-10 | 2017-09-19 | Tokyo Electron Limited | Methods for high precision etching of substrates |
FR3023971B1 (en) | 2014-07-18 | 2016-08-05 | Commissariat Energie Atomique | METHOD FOR FORMING SPACERS OF A GRID OF A TRANSISTOR |
US9520294B2 (en) | 2014-08-29 | 2016-12-13 | Applied Materials, Inc. | Atomic layer etch process using an electron beam |
JP2018500767A (en) | 2014-12-18 | 2018-01-11 | ザ リージェンツ オブ ザ ユニバーシティ オブ コロラド,ア ボディー コーポレイトTHE REGENTS OF THE UNIVERSITY OF COLORADO,a body corporate | Novel method of atomic layer etching (ALE) using sequential self-controlled thermal reaction |
US9576811B2 (en) | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
US9478433B1 (en) | 2015-03-30 | 2016-10-25 | Applied Materials, Inc. | Cyclic spacer etching process with improved profile control |
US9806252B2 (en) | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
US9870899B2 (en) | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
SG10201604524PA (en) | 2015-06-05 | 2017-01-27 | Lam Res Corp | ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS |
US9449843B1 (en) | 2015-06-09 | 2016-09-20 | Applied Materials, Inc. | Selectively etching metals and metal nitrides conformally |
US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
US9984858B2 (en) | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
US9837312B1 (en) | 2016-07-22 | 2017-12-05 | Lam Research Corporation | Atomic layer etching for enhanced bottom-up feature fill |
US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
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