SG10201607367UA - Method and system for graphene formation - Google Patents

Method and system for graphene formation

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Publication number
SG10201607367UA
SG10201607367UA SG10201607367UA SG10201607367UA SG10201607367UA SG 10201607367U A SG10201607367U A SG 10201607367UA SG 10201607367U A SG10201607367U A SG 10201607367UA SG 10201607367U A SG10201607367U A SG 10201607367UA SG 10201607367U A SG10201607367U A SG 10201607367UA
Authority
SG
Singapore
Prior art keywords
graphene formation
graphene
formation
Prior art date
Application number
SG10201607367UA
Other languages
English (en)
Inventor
David A Boyd
Original Assignee
California Inst Of Techn
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Inst Of Techn filed Critical California Inst Of Techn
Publication of SG10201607367UA publication Critical patent/SG10201607367UA/en

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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
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    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
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    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/129—Radiofrequency
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    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/18—Stationary reactors having moving elements inside
    • B01J19/22—Stationary reactors having moving elements inside in the form of endless belts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
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    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
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    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L21/02425—Conductive materials, e.g. metallic silicides
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02617—Deposition types
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
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    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Plasma & Fusion (AREA)
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  • Computer Hardware Design (AREA)
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  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
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  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Electromagnetism (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
SG10201607367UA 2012-02-24 2013-02-22 Method and system for graphene formation SG10201607367UA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261603104P 2012-02-24 2012-02-24
US201261607337P 2012-03-06 2012-03-06
US201261677323P 2012-07-30 2012-07-30

Publications (1)

Publication Number Publication Date
SG10201607367UA true SG10201607367UA (en) 2016-10-28

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SG10201607367UA SG10201607367UA (en) 2012-02-24 2013-02-22 Method and system for graphene formation
SG11201404775RA SG11201404775RA (en) 2012-02-24 2013-02-22 Method and system for graphene formation
SG10201908213V SG10201908213VA (en) 2012-02-24 2013-02-22 Method and system for graphene formation

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SG11201404775RA SG11201404775RA (en) 2012-02-24 2013-02-22 Method and system for graphene formation
SG10201908213V SG10201908213VA (en) 2012-02-24 2013-02-22 Method and system for graphene formation

Country Status (8)

Country Link
US (3) US9150418B2 (enrdf_load_stackoverflow)
EP (1) EP2817261B1 (enrdf_load_stackoverflow)
JP (2) JP6262156B2 (enrdf_load_stackoverflow)
KR (1) KR102107382B1 (enrdf_load_stackoverflow)
CN (2) CN106744866B (enrdf_load_stackoverflow)
SG (3) SG10201607367UA (enrdf_load_stackoverflow)
TW (1) TWI552954B (enrdf_load_stackoverflow)
WO (1) WO2013126671A1 (enrdf_load_stackoverflow)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201607367UA (en) * 2012-02-24 2016-10-28 California Inst Of Techn Method and system for graphene formation
KR20200003258A (ko) * 2013-01-14 2020-01-08 캘리포니아 인스티튜트 오브 테크놀로지 그라펜을 형성시키는 방법 및 시스템
US9242865B2 (en) 2013-03-05 2016-01-26 Lockheed Martin Corporation Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition
US9458020B2 (en) * 2013-05-06 2016-10-04 Centre National De La Recherche Scientifique Process and device for forming a graphene layer
GB201318463D0 (en) * 2013-08-13 2013-12-04 Medical Res Council Graphene Modification
WO2015149116A1 (en) * 2014-04-04 2015-10-08 Commonwealth Scientific And Industrial Research Organisation Graphene process and product
US10072355B2 (en) * 2014-04-15 2018-09-11 Board Of Regents, The University Of Texas System Methods of forming graphene single crystal domains on a low nucleation site density substrate
US10566104B2 (en) * 2014-07-09 2020-02-18 Daegu Gyeongbuk Institute Of Science And Technology Metal nanowire having core-shell structure coated with graphene, and manufacturing method therefor
CN104211054B (zh) * 2014-09-09 2016-05-18 中国科学院化学研究所 一种可控制备石墨烯的方法
CN104576457A (zh) * 2014-12-26 2015-04-29 常州二维碳素科技有限公司 一种对石墨烯制件进行表面处理的设备及其处理方法
KR101723521B1 (ko) * 2015-02-26 2017-04-05 주성엔지니어링(주) 그래핀 성장 장치
KR101717476B1 (ko) * 2015-02-27 2017-03-27 주성엔지니어링(주) 그래핀 성장 장치
TWI539043B (zh) 2015-07-21 2016-06-21 財團法人工業技術研究院 石墨烯花的形成方法
JP6661189B2 (ja) * 2015-10-02 2020-03-11 国立研究開発法人産業技術総合研究所 グラフェン膜の作製方法
CN105220128B (zh) * 2015-11-16 2018-03-16 哈尔滨工业大学 一种锆合金表面原位垂直生长石墨烯防腐层的制备方法
JP6652770B2 (ja) * 2016-04-04 2020-02-26 株式会社不二越 固体高分子形燃料電池用セパレータの製造方法
NO345837B1 (en) * 2016-05-04 2021-08-30 Cealtech As Apparatus for large scale producing 3D graphene and method describing the same
CN106248221A (zh) * 2016-07-19 2016-12-21 中国科学院重庆绿色智能技术研究院 一种基于石墨烯的非制冷红外探测器及原位制作方法
US9997334B1 (en) * 2017-02-09 2018-06-12 Lyten, Inc. Seedless particles with carbon allotropes
US10825586B2 (en) * 2017-08-30 2020-11-03 Ultra Conductive Copper Company, Inc. Method and system for forming a multilayer composite structure
ES2717199B2 (es) * 2017-12-19 2022-07-21 Pamies Javier Biela Planta de biogas
WO2020124018A1 (en) * 2018-12-14 2020-06-18 Massachusetts Institute Of Technology Formation and/or growth of carbon-based nanostructures on copper-containing substrates, and related systems and methods
US12217958B2 (en) 2019-03-04 2025-02-04 Samsung Electronics Co., Ltd. Method of pre-treating substrate and method of directly forming graphene using the same
CN109975368A (zh) * 2019-03-21 2019-07-05 西南大学 一种用于气敏传感的石墨烯氧化锡复合材料的制备方法
CN109930133A (zh) * 2019-03-21 2019-06-25 西南大学 一种用于气敏传感的石墨烯氧化锆复合材料的制备方法
US12240761B2 (en) 2020-02-03 2025-03-04 Cealtech As Device for large-scale production of graphene
JP7561530B2 (ja) * 2020-06-25 2024-10-04 東京エレクトロン株式会社 成膜方法及び成膜装置
CN111847432B (zh) * 2020-07-24 2023-08-29 北京石墨烯研究院 大面积多层石墨烯及其制备方法
US12312679B2 (en) 2020-12-22 2025-05-27 Joz̃Stefan Institute Method for producing N-doped carbon nanomesh
US11515163B2 (en) * 2021-01-06 2022-11-29 Applied Materials, Inc. Low temperature graphene growth
US12300497B2 (en) 2021-02-11 2025-05-13 Applied Materials, Inc. Method and apparatus of low temperature plasma enhanced chemical vapor deposition of graphene
WO2023079018A1 (en) 2021-11-04 2023-05-11 Universite Picardie Jules Verne Process for direct deposition of graphene or graphene oxide onto a substrate of interest
KR102727835B1 (ko) 2022-10-12 2024-11-08 주식회사 케이비엘러먼트 질소가 도핑된 그래핀 제조 방법
WO2025018598A1 (ko) * 2023-07-14 2025-01-23 주성엔지니어링(주) 그래핀막의 형성 방법
WO2025018599A1 (ko) * 2023-07-14 2025-01-23 주성엔지니어링(주) 탄소 함유막의 형성 방법
CN117623291A (zh) * 2023-12-14 2024-03-01 北京石墨烯研究院 双层石墨烯薄膜及其制备方法
CN119218986B (zh) * 2024-11-28 2025-04-08 中国人民解放军国防科技大学 一种基于脉冲离子束的石墨烯单层去除方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55158275A (en) * 1979-05-28 1980-12-09 Hitachi Ltd Corrosion preventing method for al and al alloy
US4431499A (en) * 1982-02-26 1984-02-14 The United States Of America As Represented By The United States Department Of Energy Method of sputter etching a surface
JPH0225571A (ja) * 1988-07-13 1990-01-29 Kawasaki Steel Corp 硬質炭素膜合成方法
JP3231426B2 (ja) * 1992-10-28 2001-11-19 富士通株式会社 水素プラズマダウンフロー処理方法及び水素プラズマダウンフロー処理装置
US6547934B2 (en) * 1998-05-18 2003-04-15 Applied Materials, Inc. Reduction of metal oxide in a dual frequency etch chamber
JP2000096233A (ja) * 1998-06-20 2000-04-04 Nissin Electric Co Ltd 炭素膜及びその形成方法並びに炭素膜被覆物品及びその製造方法
JP2001007117A (ja) * 1999-06-24 2001-01-12 Tokyo Electron Ltd 処理装置及び処理方法
WO2004074932A2 (en) 2003-02-14 2004-09-02 Applied Materials, Inc. Method and apparatus for cleaning of native oxides with hydroge-containing radicals
US20070184190A1 (en) * 2003-08-27 2007-08-09 Mineo Hiramatsu Method for producing carbon nanowalls, carbon nanowall, and apparatus for producing carbon nanowalls
JP4510707B2 (ja) * 2004-09-08 2010-07-28 三星電子株式会社 エピタキシャル膜の形成方法と、これを用いた薄膜形成方法、及び半導体装置の製造方法
JP2006135052A (ja) * 2004-11-05 2006-05-25 Renesas Technology Corp 半導体装置の製造方法および半導体装置の製造システム
JP4806296B2 (ja) * 2006-05-26 2011-11-02 神港精機株式会社 クリーニング装置
JP2009184892A (ja) * 2008-02-08 2009-08-20 Dainippon Screen Mfg Co Ltd カーボンナノチューブ形成装置およびカーボンナノチューブ形成方法
WO2009119059A1 (ja) * 2008-03-26 2009-10-01 Ｎｕエコ・エンジニアリング株式会社 グラフェンの製造方法
JP5453045B2 (ja) * 2008-11-26 2014-03-26 株式会社日立製作所 グラフェン層が成長された基板およびそれを用いた電子・光集積回路装置
KR101174870B1 (ko) 2009-02-06 2012-08-17 에이비씨상사 주식회사 그라펜 복합체 조성물 및 이를 이용한 투명한 전도성 필름
KR20100090580A (ko) * 2009-02-06 2010-08-16 에이비씨상사 주식회사 그라펜 물질의 제조방법
JP2010212619A (ja) * 2009-03-12 2010-09-24 Toshiba Corp グラフェンの作製方法、グラフェン、グラフェン作製装置及び半導体素子
FR2943660B1 (fr) * 2009-03-25 2011-04-29 Commissariat Energie Atomique Procede d'elaboration de graphene
US20100323113A1 (en) * 2009-06-18 2010-12-23 Ramappa Deepak A Method to Synthesize Graphene
US10167572B2 (en) * 2009-08-07 2019-01-01 Guardian Glass, LLC Large area deposition of graphene via hetero-epitaxial growth, and products including the same
US20120161098A1 (en) * 2009-08-20 2012-06-28 Nec Corporation Substrate, manufacturing method of substrate, semiconductor element, and manufacturing method of semiconductor element
KR101636442B1 (ko) * 2009-11-10 2016-07-21 삼성전자주식회사 촉매합금을 이용한 그라핀의 제조방법
KR101279606B1 (ko) * 2009-12-11 2013-07-05 한국전자통신연구원 그래핀 박막의 증착방법
JP5692794B2 (ja) * 2010-03-17 2015-04-01 独立行政法人産業技術総合研究所 透明導電性炭素膜の製造方法
JP5660804B2 (ja) * 2010-04-30 2015-01-28 東京エレクトロン株式会社 カーボンナノチューブの形成方法及びカーボンナノチューブ成膜装置
KR20120012271A (ko) 2010-07-30 2012-02-09 성균관대학교산학협력단 그래핀의 제조 방법, 그래핀 시트 및 이를 이용한 소자
WO2012051182A2 (en) * 2010-10-11 2012-04-19 University Of Houston System Fabrication of single-crystalline graphene arrays
CN102212794B (zh) * 2011-04-13 2012-10-10 中国科学院上海微系统与信息技术研究所 一种基于电镀铜衬底制备大面积石墨烯薄膜的方法
JP5806318B2 (ja) 2011-08-24 2015-11-10 旭化成イーマテリアルズ株式会社 樹脂封止シート及び太陽電池モジュール
SG10201607367UA (en) 2012-02-24 2016-10-28 California Inst Of Techn Method and system for graphene formation

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US20140044885A1 (en) 2014-02-13
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