SG10201605276WA - Inorganic material film, photomask blank, and method for manufacturing photomask - Google Patents

Inorganic material film, photomask blank, and method for manufacturing photomask

Info

Publication number
SG10201605276WA
SG10201605276WA SG10201605276WA SG10201605276WA SG10201605276WA SG 10201605276W A SG10201605276W A SG 10201605276WA SG 10201605276W A SG10201605276W A SG 10201605276WA SG 10201605276W A SG10201605276W A SG 10201605276WA SG 10201605276W A SG10201605276W A SG 10201605276WA
Authority
SG
Singapore
Prior art keywords
photomask
inorganic material
material film
manufacturing
blank
Prior art date
Application number
SG10201605276WA
Other languages
English (en)
Inventor
Souichi Fukaya
Kouhei Sasamoto
Hideo Nakagawa
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201605276WA publication Critical patent/SG10201605276WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG10201605276WA 2015-07-01 2016-06-27 Inorganic material film, photomask blank, and method for manufacturing photomask SG10201605276WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015132786A JP6375269B2 (ja) 2015-07-01 2015-07-01 無機材料膜、フォトマスクブランク、およびフォトマスクの製造方法

Publications (1)

Publication Number Publication Date
SG10201605276WA true SG10201605276WA (en) 2017-02-27

Family

ID=56263601

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201605276WA SG10201605276WA (en) 2015-07-01 2016-06-27 Inorganic material film, photomask blank, and method for manufacturing photomask

Country Status (7)

Country Link
US (1) US9851633B2 (zh)
EP (1) EP3112934B1 (zh)
JP (1) JP6375269B2 (zh)
KR (1) KR20170004867A (zh)
CN (1) CN106324978B (zh)
SG (1) SG10201605276WA (zh)
TW (1) TWI665323B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110809735B (zh) * 2017-09-07 2023-04-21 株式会社尼康 光掩模坯、光掩模、曝光方法、以及器件的制造方法
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3064769B2 (ja) 1992-11-21 2000-07-12 アルバック成膜株式会社 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
JP2658966B2 (ja) 1995-04-20 1997-09-30 日本電気株式会社 フォトマスク及びその製造方法
JP2001230197A (ja) 2000-02-17 2001-08-24 Sigma Meltec Ltd 端面膜除去方法および電子線描画方法
JP4933754B2 (ja) * 2005-07-21 2012-05-16 信越化学工業株式会社 フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
EP1746460B1 (en) * 2005-07-21 2011-04-06 Shin-Etsu Chemical Co., Ltd. Photomask blank, photomask and fabrication method thereof
TWI451191B (zh) 2005-12-26 2014-09-01 Hoya Corp A manufacturing method of a mask blank and a mask, and a method of manufacturing the semiconductor device
JP4883278B2 (ja) 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4737426B2 (ja) 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
KR101584383B1 (ko) * 2008-03-31 2016-01-11 호야 가부시키가이샤 포토마스크 블랭크, 포토마스크 및 포토마스크 블랭크의 제조 방법
JPWO2009123167A1 (ja) * 2008-03-31 2011-07-28 Hoya株式会社 フォトマスクブランクおよびその製造方法
KR101374484B1 (ko) * 2010-11-22 2014-03-13 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크 블랭크 및 포토마스크의 제조 방법, 및 크롬계 재료막
US9091934B2 (en) * 2010-12-24 2015-07-28 Hoya Corporation Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same
JP2013140236A (ja) * 2011-12-29 2013-07-18 Hoya Corp マスクブランク及び位相シフトマスクの製造方法
JP5739375B2 (ja) * 2012-05-16 2015-06-24 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法
JP5795992B2 (ja) * 2012-05-16 2015-10-14 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
KR102167485B1 (ko) * 2012-09-13 2020-10-19 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
JP5868905B2 (ja) * 2013-07-03 2016-02-24 信越化学工業株式会社 フォトマスクブランクの製造方法およびフォトマスクブランク
JP6544943B2 (ja) * 2014-03-28 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、位相シフトマスク、および半導体デバイスの製造方法
JP6544964B2 (ja) * 2015-03-31 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法

Also Published As

Publication number Publication date
US9851633B2 (en) 2017-12-26
JP2017015939A (ja) 2017-01-19
EP3112934A2 (en) 2017-01-04
EP3112934A3 (en) 2017-02-08
JP6375269B2 (ja) 2018-08-15
KR20170004867A (ko) 2017-01-11
TW201716613A (zh) 2017-05-16
CN106324978B (zh) 2020-12-15
TWI665323B (zh) 2019-07-11
EP3112934B1 (en) 2020-01-29
US20170003584A1 (en) 2017-01-05
CN106324978A (zh) 2017-01-11

Similar Documents

Publication Publication Date Title
LT3556937T (lt) Popieriaus lapas ir popieriaus lapo gamybos būdas
PL3559344T3 (pl) Sposób wytwarzania materiału opakowaniowego i materiał opakowaniowy wytworzony tym sposobem
EP3521511A4 (en) WATER-SOLUBLE FILM AND METHOD FOR PRODUCING THE WATER-SOLUBLE FILM
EP3196700A4 (en) Pellicle, pellicle production method and exposure method using pellicle
PL3117039T3 (pl) Sposób wytwarzania materiału opakowaniowego i materiał opakowaniowy wytworzony tym sposobem
PL3345761T3 (pl) Arkusz dekoracyjny i sposób wytwarzania arkusza dekoracyjnego
EP3189809A4 (en) Transparent aligner and method for manufacturing same
SG11201606470RA (en) Protective film forming film, protective film forming sheet and work product manufacturing method
SG11201609095VA (en) Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method
EP3267253A4 (en) Photomask blank, method for manufacturing photomask, and mask pattern formation method
EP3291006A4 (en) PELLIC MANUFACTURING METHOD AND METHOD FOR PRODUCING A PHOTOMASK WITH PELLICLES
EP3162527A4 (en) Cushioning material for heat press and manufacturing method thereof
EP3181353A4 (en) Multilayer structure, packaging material including same, and method for manufacturing said multilayer structure
EP3382452A4 (en) PROCESS FOR FORMING A RESISTANCE STRUCTURE AND RESISTMATERIAL
SG10201607715RA (en) Photomask Blank, Making Method, and Photomask
SG10201912445QA (en) Photomask Blank and Method for Preparing Photomask
SG11202001133XA (en) Pellicle and method for manufacturing pellicle
EP3514249A4 (en) METAL MASK MATERIAL AND MANUFACTURING METHOD THEREOF METAL MASK MATERIAL
GB2560293B (en) Biochip and method for manufacturing biochip
EP3360523A4 (en) SHEETS AND METHOD FOR MANUFACTURING SHEETS
SG11201707780TA (en) Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
EP3291005A4 (en) Method for manufacturing lenticular printed matter and lenticular printed matter
SG10202013096XA (en) Film and method for its production
IL263665B (en) Vanadium compound, raw material for forming thin film, and method for manufacturing thin film
EP3263477A4 (en) Packaging material and method for manufacturing same