SG10201604395TA - Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features - Google Patents

Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features

Info

Publication number
SG10201604395TA
SG10201604395TA SG10201604395TA SG10201604395TA SG10201604395TA SG 10201604395T A SG10201604395T A SG 10201604395TA SG 10201604395T A SG10201604395T A SG 10201604395TA SG 10201604395T A SG10201604395T A SG 10201604395TA SG 10201604395T A SG10201604395T A SG 10201604395TA
Authority
SG
Singapore
Prior art keywords
additive
filling
composition
silicon vias
interconnect features
Prior art date
Application number
SG10201604395TA
Other languages
English (en)
Inventor
Cornelia Röger-Göpfert
Marco Arnold
Alexander Flügel
Charlotte Emnet
Roman Benedikt Raether
Dieter Mayer
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG10201604395TA publication Critical patent/SG10201604395TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
    • C08L77/02—Polyamides derived from omega-amino carboxylic acids or from lactams thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02—Polyamines
    • C08G73/028—Polyamidoamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/02—Polyamines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
    • C08K2003/3045—Sulfates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Polyamides (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
SG10201604395TA 2011-06-01 2012-05-31 Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features SG10201604395TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161491935P 2011-06-01 2011-06-01

Publications (1)

Publication Number Publication Date
SG10201604395TA true SG10201604395TA (en) 2016-07-28

Family

ID=47258478

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2013084686A SG194983A1 (en) 2011-06-01 2012-05-31 Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
SG10201604395TA SG10201604395TA (en) 2011-06-01 2012-05-31 Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2013084686A SG194983A1 (en) 2011-06-01 2012-05-31 Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features

Country Status (11)

Country Link
US (1) US9631292B2 (ja)
EP (1) EP2714807B1 (ja)
JP (1) JP6062425B2 (ja)
KR (1) KR101952568B1 (ja)
CN (1) CN103547631B (ja)
IL (1) IL229465B (ja)
MY (1) MY168658A (ja)
RU (1) RU2013158459A (ja)
SG (2) SG194983A1 (ja)
TW (1) TWI573900B (ja)
WO (1) WO2012164509A1 (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150345039A1 (en) * 2015-07-20 2015-12-03 National Institute Of Standards And Technology Composition having alkaline ph and process for forming superconformation therewith
US11579344B2 (en) 2012-09-17 2023-02-14 Government Of The United States Of America, As Represented By The Secretary Of Commerce Metallic grating
JP6411354B2 (ja) 2012-11-09 2018-10-24 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 平坦化剤を含む金属電気めっきのための組成物
JP2016132822A (ja) * 2015-01-22 2016-07-25 富士電機株式会社 電気銅メッキ浴及び電気銅メッキ装置、並びに電気銅メッキ方法
US10006136B2 (en) * 2015-08-06 2018-06-26 Dow Global Technologies Llc Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of imidazole compounds, bisepoxides and halobenzyl compounds
CN108026129A (zh) 2015-10-08 2018-05-11 罗门哈斯电子材料有限责任公司 包含胺、聚丙烯酰胺和磺酸内酯的反应产物化合物的铜电镀浴
KR102127642B1 (ko) * 2015-10-08 2020-06-29 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 아민과 폴리아크릴아미드와 비스에폭시드의 반응 생성물을 함유하는 구리 전기도금욕
KR102125234B1 (ko) * 2015-10-08 2020-06-22 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 아민과 폴리아크릴아미드의 반응 생성물의 화합물을 포함하는 구리 전기도금욕
WO2017059563A1 (en) * 2015-10-08 2017-04-13 Rohm And Haas Electronic Materials Llc Copper electroplating baths containing compounds of reaction products of amines and quinones
JP6828371B2 (ja) * 2016-07-25 2021-02-10 住友金属鉱山株式会社 めっき膜の製造方法
JP2020502370A (ja) * 2016-12-20 2020-01-23 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物
WO2019043146A1 (en) 2017-09-04 2019-03-07 Basf Se COMPOSITION FOR METALLIC ELECTROPLATING COMPRISING A LEVELING AGENT
EP3714085B1 (en) * 2017-11-20 2023-08-09 Basf Se Composition for cobalt electroplating comprising leveling agent
EP4127025A1 (en) 2020-04-03 2023-02-08 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
FR3109840B1 (fr) * 2020-04-29 2022-05-13 Aveni Procédé de métallisation d’un substrat semi-conducteur, électrolyte et méthode de fabrication de 3D-NAND
CN118043502A (zh) 2021-10-01 2024-05-14 巴斯夫欧洲公司 用于铜电沉积的包含聚氨基酰胺型流平剂的组合物
WO2024008562A1 (en) * 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN117801262A (zh) * 2022-09-23 2024-04-02 华为技术有限公司 整平剂、电镀组合物及其应用

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315087A (en) 1975-04-28 1982-02-09 Petrolite Corporation Quaternary polyaminoamides
DE19758121C2 (de) * 1997-12-17 2000-04-06 Atotech Deutschland Gmbh Wäßriges Bad und Verfahren zum elektrolytischen Abscheiden von Kupferschichten
US20040045832A1 (en) 1999-10-14 2004-03-11 Nicholas Martyak Electrolytic copper plating solutions
DE10139452A1 (de) 2001-08-10 2003-02-20 Basf Ag Quaternierte Polyamidamine, deren Herstellung, entsprechende Mittel und deren Verwendung
EP1727852B1 (en) 2004-03-19 2008-07-02 Basf Se Modified polyaminoamides
JP2007107074A (ja) * 2005-10-17 2007-04-26 Okuno Chem Ind Co Ltd 酸性電気銅めっき液及び電気銅めっき方法
JP5558675B2 (ja) * 2007-04-03 2014-07-23 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 金属メッキ組成物
TWI341554B (en) 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
US20090143520A1 (en) 2007-11-30 2009-06-04 E.I. Du Pont De Nemours And Company Partially aromatic polyamide compositions for metal plated articles
EP2417283B1 (en) 2009-04-07 2014-07-30 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
KR101759352B1 (ko) 2009-04-07 2017-07-18 바스프 에스이 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물
WO2010115757A1 (en) 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
RU2542178C2 (ru) 2009-04-07 2015-02-20 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности
KR101738708B1 (ko) 2009-07-30 2017-05-22 바스프 에스이 서브미크론 특징부의 무공극 충전을 위한 억제제를 포함하는 금속 도금용 조성물
RU2539897C2 (ru) 2009-07-30 2015-01-27 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности
JP5637671B2 (ja) 2009-09-16 2014-12-10 上村工業株式会社 電気銅めっき浴及びその電気銅めっき浴を用いた電気めっき方法
WO2011064154A2 (en) 2009-11-27 2011-06-03 Basf Se Composition for metal electroplating comprising leveling agent

Also Published As

Publication number Publication date
EP2714807A4 (en) 2014-11-19
KR20140038484A (ko) 2014-03-28
KR101952568B1 (ko) 2019-02-27
US9631292B2 (en) 2017-04-25
JP2014523477A (ja) 2014-09-11
MY168658A (en) 2018-11-28
EP2714807B1 (en) 2019-01-02
TWI573900B (zh) 2017-03-11
IL229465B (en) 2018-02-28
RU2013158459A (ru) 2015-07-20
IL229465A0 (en) 2014-01-30
SG194983A1 (en) 2013-12-30
WO2012164509A1 (en) 2012-12-06
US20140097092A1 (en) 2014-04-10
JP6062425B2 (ja) 2017-01-18
CN103547631A (zh) 2014-01-29
EP2714807A1 (en) 2014-04-09
TW201303089A (zh) 2013-01-16
CN103547631B (zh) 2016-07-06

Similar Documents

Publication Publication Date Title
IL229465A0 (en) A preparation for metallic electrical coating containing an additive for filling from the bottom-up through silicone and connectivity properties
IL238129B (en) A preparation for electrical metallic coating containing an equalizing agent
TWI560326B (en) Method for copper plating
EP2742154A4 (en) BIOMARKER COMPOSITIONS AND METHODS
EP2721179A4 (en) BIOMARKER COMPOSITIONS AND ASSOCIATED METHODS
IL223183A0 (en) Composition for metal electroplating comprising leveling agent
SG10201403724PA (en) Semiconductor device and method of forming avertical interconnect structure for 3-d fo-wlcsp
SG10201510522XA (en) Composition for metal electroplating comprising leveling agent
IL221655A (en) Preparation for metallic electrical coating containing comparator
EP2687304A4 (en) METAL COMPOSITE COMPOSITION, AND MIXTURE THEREOF
SG11201406599RA (en) Copper-nickel alloy electroplating bath and plating method
EP2896720A4 (en) BASIC AGENT FOR AUTOCATALYTIC DEPOSITION
EP2781620A4 (en) COMPOSITION FOR FORMING COPPER PATTERN AND METHOD FOR FORMING COPPER PATTERN
IL227924A0 (en) Preparations and methods of use for determining a4he
IL232023A0 (en) Useful compositions and methods for extracting oils
EP2782123A4 (en) TRANSFER SUBSTRATE FOR FORMING A METAL WIRING LINE AND METHOD FOR FORMING A METAL WIRING LINE USING SAID TRANSFER SUBSTRATE
EP2787988A4 (en) ADDED OIL COMPOSITIONS AND METHODS FOR ENHANCED HEALTH
EP2770985A4 (en) ARTEMISININE AND BERBERINE COMPOSITIONS AND METHOD FOR THE PRODUCTION THEREOF
EP2663667A4 (en) AUTOCATALYTIC DEPOSITION BATH COMPOSITION AND METHOD FOR PLATING PARTICULATE MATERIAL
EP2741823A4 (en) METHOD AND COMPOSITIONS FOR IMPROVING SEED FUNCTIONALITY
SG11201400493QA (en) Composition for electronic device
GB201121175D0 (en) Method of electroplating
EP2761646A4 (en) METHODS OF FORMING CONNECTION HOLES THROUGH A SUBSTRATE
HK1198660A1 (en) Replenishing compositions and methods of replenishing pretreatment compositions
EP2801111A4 (en) INTEGRATED CIRCUIT CONSTRUCTIONS WITH SUBSTRATE PASSAGES AND METHOD FOR GENERATING INTEGRATED CIRCUIT CONSTRUCTIONS WITH SUBSTRATE PASSAGES