SG10201604395TA - Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features - Google Patents
Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect featuresInfo
- Publication number
- SG10201604395TA SG10201604395TA SG10201604395TA SG10201604395TA SG10201604395TA SG 10201604395T A SG10201604395T A SG 10201604395TA SG 10201604395T A SG10201604395T A SG 10201604395TA SG 10201604395T A SG10201604395T A SG 10201604395TA SG 10201604395T A SG10201604395T A SG 10201604395TA
- Authority
- SG
- Singapore
- Prior art keywords
- additive
- filling
- composition
- silicon vias
- interconnect features
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000000654 additive Substances 0.000 title 1
- 230000000996 additive effect Effects 0.000 title 1
- 238000009713 electroplating Methods 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
- C08L77/02—Polyamides derived from omega-amino carboxylic acids or from lactams thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/02—Polyamines
- C08G73/028—Polyamidoamines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/02—Polyamines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
- C08K2003/3045—Sulfates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Polyamides (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161491935P | 2011-06-01 | 2011-06-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201604395TA true SG10201604395TA (en) | 2016-07-28 |
Family
ID=47258478
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201604395TA SG10201604395TA (en) | 2011-06-01 | 2012-05-31 | Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features |
| SG2013084686A SG194983A1 (en) | 2011-06-01 | 2012-05-31 | Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013084686A SG194983A1 (en) | 2011-06-01 | 2012-05-31 | Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9631292B2 (en) |
| EP (1) | EP2714807B1 (en) |
| JP (1) | JP6062425B2 (en) |
| KR (1) | KR101952568B1 (en) |
| CN (1) | CN103547631B (en) |
| IL (1) | IL229465B (en) |
| MY (1) | MY168658A (en) |
| RU (1) | RU2013158459A (en) |
| SG (2) | SG10201604395TA (en) |
| TW (1) | TWI573900B (en) |
| WO (1) | WO2012164509A1 (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11579344B2 (en) | 2012-09-17 | 2023-02-14 | Government Of The United States Of America, As Represented By The Secretary Of Commerce | Metallic grating |
| US20150345039A1 (en) * | 2015-07-20 | 2015-12-03 | National Institute Of Standards And Technology | Composition having alkaline ph and process for forming superconformation therewith |
| US9758885B2 (en) | 2012-11-09 | 2017-09-12 | Basf Se | Composition for metal electroplating comprising leveling agent |
| JP2016132822A (en) * | 2015-01-22 | 2016-07-25 | 富士電機株式会社 | Electrolytic copper plating bath and electrolytic copper plating device, and electrolytic copper plating method |
| US10006136B2 (en) | 2015-08-06 | 2018-06-26 | Dow Global Technologies Llc | Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of imidazole compounds, bisepoxides and halobenzyl compounds |
| CN108026127A (en) | 2015-10-08 | 2018-05-11 | 罗门哈斯电子材料有限责任公司 | The copper electroplating bath of reaction product containing amine, polyacrylamide and di-epoxide |
| JP6684354B2 (en) * | 2015-10-08 | 2020-04-22 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | Copper electroplating bath containing compound of reaction product of amine and polyacrylamide |
| EP3359550B1 (en) * | 2015-10-08 | 2020-02-12 | Rohm and Haas Electronic Materials LLC | Copper electroplating baths containing compounds of reaction products of amines and quinones |
| CN108026129A (en) * | 2015-10-08 | 2018-05-11 | 罗门哈斯电子材料有限责任公司 | The copper electroplating bath of reaction product compound comprising amine, polyacrylamide and sultones |
| JP6828371B2 (en) * | 2016-07-25 | 2021-02-10 | 住友金属鉱山株式会社 | Plating film manufacturing method |
| KR102457310B1 (en) * | 2016-12-20 | 2022-10-20 | 바스프 에스이 | Composition for Metal Plating Containing Inhibitory Agents for Void-Free Filling |
| CN111051576B (en) | 2017-09-04 | 2022-08-16 | 巴斯夫欧洲公司 | Composition for metal plating comprising leveling agent |
| WO2021197950A1 (en) | 2020-04-03 | 2021-10-07 | Basf Se | Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent |
| FR3109840B1 (en) * | 2020-04-29 | 2022-05-13 | Aveni | Method of metallization of a semiconductor substrate, electrolyte and method of manufacturing 3D-NAND |
| WO2023052254A1 (en) | 2021-10-01 | 2023-04-06 | Basf Se | Composition for copper electrodeposition comprising a polyaminoamide type leveling agent |
| WO2024008562A1 (en) * | 2022-07-07 | 2024-01-11 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
| CN117801262A (en) * | 2022-09-23 | 2024-04-02 | 华为技术有限公司 | Leveling agent, electroplating composition and application thereof |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4315087A (en) | 1975-04-28 | 1982-02-09 | Petrolite Corporation | Quaternary polyaminoamides |
| DE19758121C2 (en) * | 1997-12-17 | 2000-04-06 | Atotech Deutschland Gmbh | Aqueous bath and method for electrolytic deposition of copper layers |
| US20040045832A1 (en) | 1999-10-14 | 2004-03-11 | Nicholas Martyak | Electrolytic copper plating solutions |
| DE10139452A1 (en) | 2001-08-10 | 2003-02-20 | Basf Ag | Quaternary amideamines, useful in the cosmetic and pharmaceutical industries, in plant protection or textile dyeing |
| ATE399810T1 (en) | 2004-03-19 | 2008-07-15 | Basf Se | MODIFIED POLYAMINOAMIDES |
| JP2007107074A (en) * | 2005-10-17 | 2007-04-26 | Okuno Chem Ind Co Ltd | Acidic copper electroplating solution and copper electroplating method |
| JP5558675B2 (en) | 2007-04-03 | 2014-07-23 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | Metal plating composition |
| TWI341554B (en) | 2007-08-02 | 2011-05-01 | Enthone | Copper metallization of through silicon via |
| US20090143520A1 (en) | 2007-11-30 | 2009-06-04 | E.I. Du Pont De Nemours And Company | Partially aromatic polyamide compositions for metal plated articles |
| KR101759352B1 (en) | 2009-04-07 | 2017-07-18 | 바스프 에스이 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| MY158203A (en) | 2009-04-07 | 2016-09-15 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| RU2542178C2 (en) | 2009-04-07 | 2015-02-20 | Басф Се | Composition for application of metal coating, which contains suppressing agent for voidless filling of submicron surface elements |
| WO2010115757A1 (en) | 2009-04-07 | 2010-10-14 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| CN102597329B (en) | 2009-07-30 | 2015-12-16 | 巴斯夫欧洲公司 | Comprise the tight submicrometer structure filling metal plating compositions of inhibitor |
| RU2539895C2 (en) | 2009-07-30 | 2015-01-27 | Басф Се | Metal coating composition containing suppressing agent for void-free filling of submicron surface elements |
| JP5637671B2 (en) | 2009-09-16 | 2014-12-10 | 上村工業株式会社 | Electro copper plating bath and electroplating method using the electro copper plating bath |
| JP5952738B2 (en) * | 2009-11-27 | 2016-07-13 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | Composition for metal electroplating comprising a leveling agent |
-
2012
- 2012-05-31 CN CN201280025216.2A patent/CN103547631B/en active Active
- 2012-05-31 EP EP12792059.3A patent/EP2714807B1/en active Active
- 2012-05-31 SG SG10201604395TA patent/SG10201604395TA/en unknown
- 2012-05-31 RU RU2013158459/04A patent/RU2013158459A/en not_active Application Discontinuation
- 2012-05-31 KR KR1020137035163A patent/KR101952568B1/en active IP Right Grant
- 2012-05-31 MY MYPI2013004257A patent/MY168658A/en unknown
- 2012-05-31 WO PCT/IB2012/052727 patent/WO2012164509A1/en active Application Filing
- 2012-05-31 SG SG2013084686A patent/SG194983A1/en unknown
- 2012-05-31 US US14/123,129 patent/US9631292B2/en active Active
- 2012-05-31 JP JP2014513298A patent/JP6062425B2/en active Active
- 2012-06-01 TW TW101119850A patent/TWI573900B/en active
-
2013
- 2013-12-02 IL IL229465A patent/IL229465B/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| JP6062425B2 (en) | 2017-01-18 |
| IL229465A0 (en) | 2014-01-30 |
| US20140097092A1 (en) | 2014-04-10 |
| IL229465B (en) | 2018-02-28 |
| US9631292B2 (en) | 2017-04-25 |
| KR20140038484A (en) | 2014-03-28 |
| JP2014523477A (en) | 2014-09-11 |
| WO2012164509A1 (en) | 2012-12-06 |
| CN103547631A (en) | 2014-01-29 |
| CN103547631B (en) | 2016-07-06 |
| TWI573900B (en) | 2017-03-11 |
| EP2714807A4 (en) | 2014-11-19 |
| RU2013158459A (en) | 2015-07-20 |
| EP2714807B1 (en) | 2019-01-02 |
| SG194983A1 (en) | 2013-12-30 |
| MY168658A (en) | 2018-11-28 |
| TW201303089A (en) | 2013-01-16 |
| KR101952568B1 (en) | 2019-02-27 |
| EP2714807A1 (en) | 2014-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IL229465A0 (en) | Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features | |
| IL238129B (en) | Composition for metal electroplating comprising leveling agent | |
| TWI560326B (en) | Method for copper plating | |
| EP2742154A4 (en) | Biomarker compositions and methods | |
| EP2721179A4 (en) | Biomarker compositions and methods | |
| IL223183A0 (en) | Composition for metal electroplating comprising leveling agent | |
| SG10201403724PA (en) | Semiconductor device and method of forming avertical interconnect structure for 3-d fo-wlcsp | |
| SG10201510522XA (en) | Composition for metal electroplating comprising leveling agent | |
| IL221655A (en) | Composition for metal electroplating comprising leveling agent | |
| EP2687304A4 (en) | Metal complex compositions and mixture thereof | |
| SG11201406599RA (en) | Copper-nickel alloy electroplating bath and plating method | |
| EP2896720A4 (en) | Electroless plating base agent | |
| EP2781620A4 (en) | Composition for forming copper pattern and method for forming copper pattern | |
| IL227924A0 (en) | Compositions and methods of use for determination of he4a | |
| EP2782123A4 (en) | Transfer substrate for forming metal wiring line and method for forming metal wiring line by means of said transfer substrate | |
| EP2787988A4 (en) | Supplemented oil compositions and methods for improved health | |
| IL232023A0 (en) | Compositions and methods useful for oil extraction | |
| EP2770985A4 (en) | Artemisinin and berberine compositions and methods of making | |
| EP2663667A4 (en) | Electroless plating bath composition and method of plating particulate matter | |
| EP2741823A4 (en) | Methods and compositions for improving sperm functionality | |
| SG11201400493QA (en) | Composition for electronic device | |
| GB201121175D0 (en) | Method of electroplating | |
| EP2761646A4 (en) | Methods of forming through-substrate vias | |
| HK1198660A1 (en) | Replenishing compositions and methods of replenishing pretreatment compositions | |
| EP2801111A4 (en) | Integrated circuit constructions having through substrate vias and methods of forming integrated circuit constructions having through substrate vias |